The reliability of electronic device is threatened in high power microwave (HPM) environment. In accordance with the situation that the emulation is ineffective in evaluating the accuracy and precision of the HPM effe...The reliability of electronic device is threatened in high power microwave (HPM) environment. In accordance with the situation that the emulation is ineffective in evaluating the accuracy and precision of the HPM effect to electronic device, the experimental method is used to resolve the problem. Low Noise Amplifier (LNA) and Limiter are selected as the objects for the experiments, the structural characteristic of the front-end of radar receiver is described, the phenomena and criterion are elaborated and analyzed using injection method due to its ability to get an accurate threshold avoiding the complex coupling, the basic principle of injection experiment is demonstrated, and the method and process of effect experiment about Low Noise Amplifier and Limiter are also explained. The experimental system is established, and the system is composed of low power microwave source such as TWT, test equipment for obtaining the effect parameters, and some of auxiliary equipments as camera, optical microscope or electron microscopy, attenuator, detector, and directional coupler etc. The microwave delivered from source is adjusted to the power infused by attenuator, and pour in the decanting point of effecter via directional coupler, then the couple signal created by directional coupler is input to the recording instrument after detecting by detector, finally the power of effecter is obtained. The value of power, which damages the effecter in the microwave pulse environment, is classified at the index of sensitivity, and the threshold is obtained by power diagnose and wave test. Some regular understandings of the HPM effect to electronic device are obtained based on the results of the experiments. It turns out that the index of electronic device is influenced significantly by the energy via front door coupling, the MOSFET made up of GaAs is the most wearing part to HPM in LNA, the damage threshold of LNA is about 40dBm under single pulse while in repetitive pulse the value is from 33.3dBm to 43.9dBm according to different wave band. The damage threshold of Limiter is about 56dBm to80dBm.展开更多
A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum po...A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency （PAE） are determined at the fundamental and 2nd harmonic frequency （f0 and 2f0）. The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5,4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15 % and an associated power gain of 28.7 dB, which is an outstanding performance.展开更多
An asymmetric Doherty architecture based on three identical transistors is proposed in this paper. This proposed three.way topology reduces the difficulty in designing matching networks brought by the low optimal impe...An asymmetric Doherty architecture based on three identical transistors is proposed in this paper. This proposed three.way topology reduces the difficulty in designing matching networks brought by the low optimal impedance of high power transistors. And the inverted Doherty topology as well as carefully chosen value of load impedance makes it possible to extend the bandwidth of high power amplifiers. Besides, bias networks of this proposed three.way architecture are also carefully considered to improve the linearity. The proposed high power three.way Doherty power amplifier(3W.DPA) is designed and fabricated based on theoretic analysis. Its maximum output power is about 600 Watts and the drain efficiency is above 35.5% at 9d B back off output power level from 1.9GHz to 2.2 GHz and the saturated drain efficiency is above 47% across the whole frequency band. The measured concurrent two.tone results suggest that the linearity of DPA is improved by at least 5d B.展开更多
In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gat...In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.展开更多
By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimi...By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.展开更多
In this paper, we present the damage effect and mechanism of high power microwave （HPM） on AIGaAs/GaAs pseudomorphic high-electron-mobility transistor （pHEMT） of low-noise amplifier （LNA）. A detailed investigati...In this paper, we present the damage effect and mechanism of high power microwave （HPM） on AIGaAs/GaAs pseudomorphic high-electron-mobility transistor （pHEMT） of low-noise amplifier （LNA）. A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy （SEM） and energy dispersive spectrometer （EDS）. Experimental results accord well with the simulation of our model.展开更多
Stimulated Raman scattering in a double cladding optical fiber is studied with a continuous wave laser used as a pump source. Under various launch conditions, pump modes are differently excited. Considering the mode c...Stimulated Raman scattering in a double cladding optical fiber is studied with a continuous wave laser used as a pump source. Under various launch conditions, pump modes are differently excited. Considering the mode coupling effect among the pump modes, the evolution of the power in the Stokes modes is studied. The results show that the scattered waves （the Stokes waves） in the fiber core with 9%tm diameter and 0.14 NA could propagate predominantly in the fundamental mode of the fiber by carefully adjusting the pump light launching conditions.展开更多
针对强记忆功放的非线性问题,提出一种基于自适应扩展卡尔曼滤波与神经网络的高功放(High power amplifier,HPA)预失真算法.采用实数固定延时神经网络(Real-valued focused time-delay neural network,RVFTDNN)对间接学习结构预失真系...针对强记忆功放的非线性问题,提出一种基于自适应扩展卡尔曼滤波与神经网络的高功放(High power amplifier,HPA)预失真算法.采用实数固定延时神经网络(Real-valued focused time-delay neural network,RVFTDNN)对间接学习结构预失真系统中的预失真器和逆估计器进行建模,扩展卡尔曼滤波(Extended Kalman filter,EKF)算法训练神经网络,从理论上指出Levenberg-Marquardt(LM)算法是EKF算法的特殊情况,并用李亚普诺夫稳定性理论分析EKF算法的稳定收敛条件,推导出测量误差矩阵的自适应迭代公式.结果表明:自适应EKF算法的训练误差和泛化误差均比LM算法更低,预失真后的邻道功率比(Adjacent channel power ratio,ACPR)比LM算法改善了2 d B.展开更多
A three-stage 4.8-6 GHz monolithic power amplifier（PA） compatible with IEEE 802.11a/n designed based on an advanced 2μm InGaP/GaAs hetero-junction bipolar transistor（HBT） process is presented.The PA integrates in...A three-stage 4.8-6 GHz monolithic power amplifier（PA） compatible with IEEE 802.11a/n designed based on an advanced 2μm InGaP/GaAs hetero-junction bipolar transistor（HBT） process is presented.The PA integrates input matching and closed-loop power control circuits on chip.Under 3.3 V DC bias,the amplifier achieves a ~31 dB small signal gain,excellent wide band input and output matching among overall 1.2 GHz bandwidth,and up to 24.5 dBm linear output power below EVM 3%with IEEE 802.11a 64QAM OFDM input signal.展开更多
本文针对高功率放大器(HPA)的非线性失真导致OFDM(Orthogonal Frequency Division Multiplexing)系统传输性能下降问题,采用两个类似结构的单输入单输出BP神经网络串联后级联HPA实现其预失真,前一网络是HPA的AM-AM特性的逆模型,用来实现...本文针对高功率放大器(HPA)的非线性失真导致OFDM(Orthogonal Frequency Division Multiplexing)系统传输性能下降问题,采用两个类似结构的单输入单输出BP神经网络串联后级联HPA实现其预失真,前一网络是HPA的AM-AM特性的逆模型,用来实现HPA的幅度预失真,后一网络是HPA的AM-PM特性模型,回避了其逆模型的建立,实现了HPA更高精度的相位预失真,提高了整体预失真效果。仿真结果显示了即使输入回退只有2.93dB,带外谱增长仍能降低约10dB,表明该方案能够方便高效地实现OFDM系统中HPA的自适应预失真,大大提高OFDM系统的传输性能。展开更多
文摘The reliability of electronic device is threatened in high power microwave (HPM) environment. In accordance with the situation that the emulation is ineffective in evaluating the accuracy and precision of the HPM effect to electronic device, the experimental method is used to resolve the problem. Low Noise Amplifier (LNA) and Limiter are selected as the objects for the experiments, the structural characteristic of the front-end of radar receiver is described, the phenomena and criterion are elaborated and analyzed using injection method due to its ability to get an accurate threshold avoiding the complex coupling, the basic principle of injection experiment is demonstrated, and the method and process of effect experiment about Low Noise Amplifier and Limiter are also explained. The experimental system is established, and the system is composed of low power microwave source such as TWT, test equipment for obtaining the effect parameters, and some of auxiliary equipments as camera, optical microscope or electron microscopy, attenuator, detector, and directional coupler etc. The microwave delivered from source is adjusted to the power infused by attenuator, and pour in the decanting point of effecter via directional coupler, then the couple signal created by directional coupler is input to the recording instrument after detecting by detector, finally the power of effecter is obtained. The value of power, which damages the effecter in the microwave pulse environment, is classified at the index of sensitivity, and the threshold is obtained by power diagnose and wave test. Some regular understandings of the HPM effect to electronic device are obtained based on the results of the experiments. It turns out that the index of electronic device is influenced significantly by the energy via front door coupling, the MOSFET made up of GaAs is the most wearing part to HPM in LNA, the damage threshold of LNA is about 40dBm under single pulse while in repetitive pulse the value is from 33.3dBm to 43.9dBm according to different wave band. The damage threshold of Limiter is about 56dBm to80dBm.
基金Project supported by the National Key Basic Research Program of China(Grant No.2011CBA00606)Program for New Century Excellent Talents in University,China(Grant No.NCET-12-0915)the National Natural Science Foundation of China(Grant No.61334002)
文摘A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency （PAE） are determined at the fundamental and 2nd harmonic frequency （f0 and 2f0）. The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5,4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15 % and an associated power gain of 28.7 dB, which is an outstanding performance.
基金supported in part by the National Basic Research Program of China (Grant No. 2014CB339900)the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. Grant 2015ZX03002002 and Grant 2016ZX03002009, and Grant 2016ZX03001005)+2 种基金the 863 program (Grant No. 2015AA010802)the National Natural Science Foundation of China (Grant No. 61522112, 61331003)the New Century Excellent Talents in University (NCET)
文摘An asymmetric Doherty architecture based on three identical transistors is proposed in this paper. This proposed three.way topology reduces the difficulty in designing matching networks brought by the low optimal impedance of high power transistors. And the inverted Doherty topology as well as carefully chosen value of load impedance makes it possible to extend the bandwidth of high power amplifiers. Besides, bias networks of this proposed three.way architecture are also carefully considered to improve the linearity. The proposed high power three.way Doherty power amplifier(3W.DPA) is designed and fabricated based on theoretic analysis. Its maximum output power is about 600 Watts and the drain efficiency is above 35.5% at 9d B back off output power level from 1.9GHz to 2.2 GHz and the saturated drain efficiency is above 47% across the whole frequency band. The measured concurrent two.tone results suggest that the linearity of DPA is improved by at least 5d B.
基金Project supported by the National Natural Science Foundation of China(Grant No.61203211)the Natural Science Foundation of Jiangsu Higher Education Institutions of China(Grant No.13KJB140006)the Foundation for Outstanding Young Teachers of Nanjing University of Information Science&Technology,China(Grant No.20110423)
文摘In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.
基金supported by the Innovation Fund of State Key Lab of Millimeter Waves
文摘By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.
基金supported by the National Basic Research Program of China(Grant No.2014CB339900)the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and TechnologyChina Academy of Engineering Physics(Grant No.2015-0214.XY.K)
文摘In this paper, we present the damage effect and mechanism of high power microwave （HPM） on AIGaAs/GaAs pseudomorphic high-electron-mobility transistor （pHEMT） of low-noise amplifier （LNA）. A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy （SEM） and energy dispersive spectrometer （EDS）. Experimental results accord well with the simulation of our model.
文摘Stimulated Raman scattering in a double cladding optical fiber is studied with a continuous wave laser used as a pump source. Under various launch conditions, pump modes are differently excited. Considering the mode coupling effect among the pump modes, the evolution of the power in the Stokes modes is studied. The results show that the scattered waves （the Stokes waves） in the fiber core with 9%tm diameter and 0.14 NA could propagate predominantly in the fundamental mode of the fiber by carefully adjusting the pump light launching conditions.
文摘针对强记忆功放的非线性问题,提出一种基于自适应扩展卡尔曼滤波与神经网络的高功放(High power amplifier,HPA)预失真算法.采用实数固定延时神经网络(Real-valued focused time-delay neural network,RVFTDNN)对间接学习结构预失真系统中的预失真器和逆估计器进行建模,扩展卡尔曼滤波(Extended Kalman filter,EKF)算法训练神经网络,从理论上指出Levenberg-Marquardt(LM)算法是EKF算法的特殊情况,并用李亚普诺夫稳定性理论分析EKF算法的稳定收敛条件,推导出测量误差矩阵的自适应迭代公式.结果表明:自适应EKF算法的训练误差和泛化误差均比LM算法更低,预失真后的邻道功率比(Adjacent channel power ratio,ACPR)比LM算法改善了2 d B.
文摘A three-stage 4.8-6 GHz monolithic power amplifier（PA） compatible with IEEE 802.11a/n designed based on an advanced 2μm InGaP/GaAs hetero-junction bipolar transistor（HBT） process is presented.The PA integrates input matching and closed-loop power control circuits on chip.Under 3.3 V DC bias,the amplifier achieves a ~31 dB small signal gain,excellent wide band input and output matching among overall 1.2 GHz bandwidth,and up to 24.5 dBm linear output power below EVM 3%with IEEE 802.11a 64QAM OFDM input signal.
文摘本文针对高功率放大器(HPA)的非线性失真导致OFDM(Orthogonal Frequency Division Multiplexing)系统传输性能下降问题,采用两个类似结构的单输入单输出BP神经网络串联后级联HPA实现其预失真,前一网络是HPA的AM-AM特性的逆模型,用来实现HPA的幅度预失真,后一网络是HPA的AM-PM特性模型,回避了其逆模型的建立,实现了HPA更高精度的相位预失真,提高了整体预失真效果。仿真结果显示了即使输入回退只有2.93dB,带外谱增长仍能降低约10dB,表明该方案能够方便高效地实现OFDM系统中HPA的自适应预失真,大大提高OFDM系统的传输性能。
