Field test of high-power microwave-assisted mechanical excavation for deep hard iron ore

Microwave-assisted mechanical excavation has great application prospects in mines and tunnels,but there are few field experiments on microwave-assisted rock breaking.This paper takes the Sishanling iron mine as the research object and adopts the self-developed high-power microwave-induced fracturing test system for hard rock to conduct field experiments of microwave-induced fracturing of iron ore.The heating and reflection evolution characteristics of ore under different microwave parameters(antenna type,power,and working distance)were studied,and the optimal microwave parameters were obtained.Subsequently,the ore was irradiated with the optimal microwave parameters,and the cracking effect of the ore under the action of the high-power open microwave was analyzed.The results show that the reflection coefficient(standing wave ratio)can be rapidly(<5 s)and automatically adjusted below the preset threshold value(1.6)as microwave irradiation is performed.When using a right-angle horn antenna with a working distance of 5 cm,the effect of automatic reflection adjustment reaches the best among other antenna types and working distances.When the working distance is the same,the average temperature of the irradiation surface and the area of the high-temperature area under the action of the two antennas(right-angled and equal-angled horn antenna)are basically the same and decrease with the increase of working distance.The optimal microwave parameters are:a right-angle horn antenna with a working distance of 5 cm.Subsequently,in further experiments,the optimal parameters were used to irradiate for 20 s and 40 s at a microwave power of 60 kW,respectively.The surface damage extended 38 cm×30 cm and 53 cm×30 cm,respectively,and the damage extended to a depth of about 50 cm.The drilling speed was increased by 56.2%and 66.5%,respectively,compared to the case when microwaves were not used.

UWB HPM对雷达方舱内电子设备的影响仿真分析

针对高功率微波辐照下雷达方舱内电子设备的响应和毁伤效应等实际问题,通过建立雷达方舱和舱内电缆模型进行了辐照仿真分析。结果表明,高功率微波信号在进入方舱时,方舱起到一定的滤波作用,类似带通滤波器;雷达方舱和舱内设备的反射会影响方舱内场强分布和极化,造成方舱内电场分布不均匀,各向异性降低,但尚未达到混响室程度;通过仿真概略计算了方舱内信号分布和传输特性;方舱内电缆耦合信号电压基本在同一个数量级,超宽谱信号辐照影响主要以扰乱为主。针对上述影响,提出了相应加固措施,可为雷达在高功率微波武器攻击下进行后门防护加固提供理论支撑。

Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

The high power microwave （HPM） damage effect on the AIGaAs/InGaAs pseudomorphic high electron mobility transistor （pHEMT） is studied by simulation and experiments. Simulated results suggest that the HPM damage to pHEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to pHEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ^-0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of pHEMT. Finally the interior observation of damaged samples by scanning electron microscopy （SEM） illustrates that the failure mechanism of the HPM damage to pHEMT is indeed device bum-out and the location beneath the gate near the source side is most susceptible to bum-out, which is in accordance with the simulated results.

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

In this paper, we present the damage effect and mechanism of high power microwave （HPM） on AIGaAs/GaAs pseudomorphic high-electron-mobility transistor （pHEMT） of low-noise amplifier （LNA）. A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy （SEM） and energy dispersive spectrometer （EDS）. Experimental results accord well with the simulation of our model.

Research on the Effect of High Power Microwave on Low Noise Amplifier and Limiter Based on the Injection Method

The reliability of electronic device is threatened in high power microwave (HPM) environment. In accordance with the situation that the emulation is ineffective in evaluating the accuracy and precision of the HPM effect to electronic device, the experimental method is used to resolve the problem. Low Noise Amplifier (LNA) and Limiter are selected as the objects for the experiments, the structural characteristic of the front-end of radar receiver is described, the phenomena and criterion are elaborated and analyzed using injection method due to its ability to get an accurate threshold avoiding the complex coupling, the basic principle of injection experiment is demonstrated, and the method and process of effect experiment about Low Noise Amplifier and Limiter are also explained. The experimental system is established, and the system is composed of low power microwave source such as TWT, test equipment for obtaining the effect parameters, and some of auxiliary equipments as camera, optical microscope or electron microscopy, attenuator, detector, and directional coupler etc. The microwave delivered from source is adjusted to the power infused by attenuator, and pour in the decanting point of effecter via directional coupler, then the couple signal created by directional coupler is input to the recording instrument after detecting by detector, finally the power of effecter is obtained. The value of power, which damages the effecter in the microwave pulse environment, is classified at the index of sensitivity, and the threshold is obtained by power diagnose and wave test. Some regular understandings of the HPM effect to electronic device are obtained based on the results of the experiments. It turns out that the index of electronic device is influenced significantly by the energy via front door coupling, the MOSFET made up of GaAs is the most wearing part to HPM in LNA, the damage threshold of LNA is about 40dBm under single pulse while in repetitive pulse the value is from 33.3dBm to 43.9dBm according to different wave band. The damage threshold of Limiter is about 56dBm to80dBm.

Study on the Generation of Ultra-Wideband (UWB) High Power Microwave

The experimental study of ultra-wideband (UWB) technology, its generation and on-line measurement are presented. An experimental repetitive UWB system is designed, manufactured, and tested. High-pressure spark gap switch and its components, as well as oil spark gap switch are studied experimentally on the system. Experimental results indicate that the system operates at a 200 pps repetitive rate with a stable performance. 100 MW peak power UWB pulses are obtained on the system. Fast-time response capacitive divider is designed and fabricated, allowing for an accurate measurement of the high power UWB signal. The main issues related to the design of the switch and the UWB signal online measurement are discussed.

Analysis of Reflection Properties of High Power Microwave Propagation in Mixture-Atmosphere

A simple theoretical modeling is made to describe the reflection features of the high power microwave (HPM) in the mixture-atmosphere. The time-space dependent mixture-atmosphere is generated by ionization of the neutral molecules in atmosphere. Reflection will occur when HPM propagates in such mixture-atmosphere. The reflection characteristic of the HPM propagation in the mixture-atmosphere is investigated by FDTD numerical experiments in inhomogeneous medium, the influence on the reflection for different HPM parameters is concluded. An additional stability conditions for the FDTD difference scheme of the HPM mixture-atmosphere propagation model are presented.

Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves

A two-dimensional model of the silicon NPN monolithic composite transistor is established for the first time by utilizing the semiconductor device simulator, Sentaurus-TCAD. By analyzing the internal distributions of electric field, current density, and temperature of the device, a detailed investigation on the damage process and mechanism induced by high-power microwaves （HPM） is performed. The results indicate that the temperature elevation occurs in the negative half-period and the temperature drop process is in the positive half-period under the HPM injection from the output port. The damage point is located near the edge of the base-emitter junction of T2, while with the input injection it exists between the base and the emitter of T2. Comparing these two kinds of injection, the input injection is more likely to damage the device than the output injection. The dependences of the damage energy threshold and the damage power threshold causing the device failure on the pulse-width are obtained, and the formulas obtained have the same form as the experimental equations, which demonstrates that more power is required to destroy the device if the pulse-width is shorter. Furthermore, the simulation result in this paper has a good coincidence with the experimental result.

Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide–semiconductor inverter

The latch-up effect induced by high-power microwave（HPM） in complementary metal–oxide–semiconductor（CMOS） inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrier injection and HPM-induced latch-up are proposed. Analysis on upset characteristic under pulsed wave reveals increasing susceptibility under shorter-width pulsed wave which satisfies experimental data, and the dependence of upset threshold on pulse repetitive frequency（PRF） is believed to be due to the accumulation of excess carriers. Moreover, the trend that HPMinduced latch-up is more likely to happen in shallow-well device is proposed.Finally, the process of self-recovery which is ever-reported in experiment with its correlation with supply voltage and power level is elaborated, and the conclusions are consistent with reported experimental results.

Changes in Rat Testicular Germ Cell Apoptosis after High Power Microwave Radiation

Aim:To study the effect of high power microwave (HPM) radiation on the testicular germ cell apoptosis. Methods: One hundred and twenty-five Spraque-Dawley rats were randomly divided into two groups, the control group and the experimental group and the latter was further divided into four subgroups: 10 mW/cm2 5 min, 10 mW/cm210 min, 20 mw/cm2 5 min and 20 mW/cm210 min. The experimental groups were radiated with S wave band of 10 mW/ cm2,20 mW/cm2 high power microwave for 5 or 10 min. Testicular samples were taken at 6 h, 24 h, 48 h, 72 h and 5 d after radiation. The testicular germ cell apoptosis was detected by in situ terminal deoxynucleotityl transferase mediated dUTP nick end labeling (TUNEL). Results: The number of apoptotic cells of the 6 h, 24 h and 48 h experimental groups after 10 and 20 mW/cm2 radiation for 5 min was significantly larger than that of the controls (P< 0.01), especially after 10 mW/cm2 radiation. The number of the 6 h group reached the peak (161.27±+5.90)/5 convoluted tubules. The changes in the other experimental groups had no significant difference compared with the controls (P>0.05). Conclusion: HPM increases the germ cell apoptosis of rat testis, which is related to the time of radiation and sample acquisition. In the condition of the present test, 5 minutes of HPM radiation may significantly enhance testicular germ cell apoptosis and damage, which in turn may influence the reproductive function of the rats.

20-Hydroxyecdysone Improves Neuronal Differentiation of Adult Hippocampal Neural Stem Cells in High Power Microwave Radiation-Exposed Rats

Objective The hippocampus is thought to be a vulnerable target of microwave exposure.The aim of the present study was to investigate whether 20-hydroxyecdysone(20E)acted as a fate regulator of adult rat hippocampal neural stem cells(NSCs).Furthermore,we investigated if 20E attenuated high power microwave(HMP)radiation-induced learning and memory deficits.Methods Sixty male Sprague-Dawley rats were randomly divided into three groups:normal controls,radiation treated,and radiation+20E treated.Rats in the radiation and radiation+20E treatment groups were exposed to HPM radiation from a microwave emission system.The learning and memory abilities of the rats were assessed using the Morris water maze test.Primary adult rat hippocampal NSCs were isolated in vitro and cultured to evaluate their proliferation and differentiation.In addition,hematoxylin&eosin staining,western blotting,and immunofluorescence were used to detect changes in the rat brain and the proliferation and differentiation of the adult rat hippocampal NSCs after HPM radiation exposure.Results The results showed that 20E induced neuronal differentiation of adult hippocampal NSCs from HPM radiation-exposed rats via the Wnt3a/β-catenin signaling pathway in vitro.Furthermore,20E facilitated neurogenesis in the subgranular zone of the rat brain following HPM radiation exposure.Administration of 20E attenuated learning and memory deficits in HPM radiation-exposed rats and frizzled-related protein(FRZB)reduced the 20E-induced nuclear translocation ofβ-catenin,while FRZB treatment also reversed 20E-induced neuronal differentiation of NSCs in vitro.Conclusion These results suggested that 20E was a fate regulator of adult rat hippocampal NSCs,where it played a role in attenuating HPM radiation-induced learning and memory deficits.

High-power microwave propagation properties in the argon plasma array

The argon plasma induced by the L-/C-band high-power microwave(HPM) is investigated theoretically and experimentally. Influences of the microwave power, pulse width, polarization and the plasma electron density on the protection performance of the plasma array against HPM are studied. The results show that the effect of HPM is caused by energy accumulation, with the gas breakdown emerging only after a short time. The attenuation of the wave by the plasma array with the tubes off can reach approximately 23 dB at 1.3 GHz. It can also be obtained that the protection performance of the plasma array against the TE wave is better than that against the TM one. The plasma array shows better protection performance in the L-band than in the C-band. In addition,the attenuation of 5.6 GHz HPM can reach 30 dB when the tubes are turned on in the experiment.The research shows that the plasma array has protection ability against HPM.

Analysis of High-Power Microwave Propagation in a Magnetized Plasma Filled Waveguide

Plasma filling can dramatically improve the performance of high power microwave devices. The characteristics of high-power microwave propagation along plasma filled waveguides in an axial magnetic field are analyzed in this paper, and the ponderomotive force effect of high power microwave is taken into consideration. Theoretical analysis and preliminary numerical calculations are performed. The analyses show that the ponderomotive effect would change the plasma density, distribution of microwave field intensity, and dispersion of wave propagation. The higher the microwave power, the stronger the ponderomotive effect. In different magnetic fields, the ponderomotive effect is different.

Short-pulse high-power microwave breakdown at high pressures

The fluid model is proposed to investigate the gas breakdown driven by a short-pulse（such as a Gaussian pulse） highpower microwave at high pressures.However,the fluid model requires specification of the electron energy distribution function（EEDF）;the common assumption of a Maxwellian EEDF can result in the inaccurate breakdown prediction when the electrons are not in equilibrium.We confirm that the influence of the incident pulse shape on the EEDF is tiny at high pressures by using the particle-in-cell Monte Carlo collision（PIC-MCC） model.As a result,the EEDF for a rectangular microwave pulse directly derived from the Boltzmann equation solver Bolsig＋ is introduced into the fluid model for predicting the breakdown threshold of the non-rectangular pulse over a wide range of pressures,and the obtained results are very well matched with those of the PIC-MCC simulations.The time evolution of a non-rectangular pulse breakdown in gas,obtained by the fluid model with the EEDF from Bolsig＋,is presented and analyzed at different pressures.In addition,the effect of the incident pulse shape on the gas breakdown is discussed.

集成电路HPM损伤机理分析

针对几种常用的数字和模拟集成电路,开展了高功率微波注入实验研究,获得了损伤阈值,分析了损伤阈值随高功率微波脉冲宽度的变化规律;通过失效分析,确定了高功率微波在集成电路微米量级的端间间隙处形成瞬态强电场,引起端间沿面击穿,并形成自持放电产生等离子区,使击穿电路端间大面积过流烧毁,导致集成电路功能失效;结合大气击穿机理及理论模型计算结果,认为高功率微波引起介质表面空气击穿是其损伤电子系统的重要机理。

一种圆波导TE_(01)模HPM滤波器

设计了一种基于环形波导耦合结构的圆波导TE_(01)模高功率微波(High-Power Microwave,HPM)滤波器,主要由圆波导半波长谐振器以及半径更大的圆波导耦合窗组成。根据耦合谐振理论得出目标TE_(01)模滤波器的外部Q值以及谐振腔之间的耦合系数,再根据波导结构尺寸和谐振频率、耦合系数、外部Q值三者之间的映射关系得到滤波器尺寸初值,仿真优化确定最终滤波器尺寸,有效提高了圆波导高次模滤波器的设计速度。设计了一款工作频率在9.4~9.7 GHz的TE_(01)模滤波器,并进行数值模拟实验,结果表明,采用164 mm直径圆波导实现的TE_(01)模圆波导HPM滤波器具有3.56 GW的功率容量。

RESEARCH ON CYLINDRICAL BOX TYPE WINDOWS USED TO TRANSMIT HIGH POWER CW

The formula for calculating the threshold of average transmitting power of cylindrical TE11 mode window is revised by accurate deduction and a practical method for calculating the temperature increment of the dielectric disk in cylindrical box type window is given. Meanwhile,a typical cylindrical box type window is calculated and used as an example to discuss the power capacity, the special harmfulness and elimination of ghost mode resonance when the window is used to transmit high power Continuous Wave(CW).

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency （PAE） are determined at the fundamental and 2nd harmonic frequency （f0 and 2f0）. The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5,4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15 % and an associated power gain of 28.7 dB, which is an outstanding performance.

某型雷达低噪声放大器的HPM毁伤效应研究

低噪声放大器(LNA)作为雷达接收系统中最敏感的部件,极易受到高功率微波(HPM)武器的前门耦合攻击,从而影响雷达整体性能。首先分析了HPM对LNA的毁伤机理,然后设计了LNA的HPM注入毁伤实验平台,对某型雷达的LNA的毁伤机理和毁伤阈值进行实验验证。结果表明,该型雷达的LNA不受HPM线性效应影响,当HPM超过其毁伤阈值后,器件内的场效应放大器(FET)栅源之间发生热烧融,造成LNA受到永久性损伤,性能失效。本结论可为该型雷达装备抗HPM毁伤效能评估和HPM防护设计提供数据支撑。

Review of high-power pulsed systems at the Institute of High Current Electronics

In this paper,we give a review of some most powerful pulsed systems developed at the Institute of High Current Electronics(HCEI),Siberian Branch,Russian Academy of Sciences,and describe latest achievements of the teams dealing with these installations.Besides the presented high-power systems,HCEI performs numerous investigations using much less powerful generators.For instance,last year much attention was paying to the research and development of the intense low-energy(<200 kV)high-current electron and ion beam and plasma sources,and their application in the technology[1-3].