Improvement of circuit oscillation generated by underwater high voltage pulse discharges based on pulse power thyristor

High voltage fracturing technology was widely used in the field of reservoir reconstruction due to its advantages of being clean, pollution-free, and high-efficiency. However, high-frequency circuit oscillation occurs during the underwater high voltage pulse discharge process, which brings security risks to the stability of the pulse fracturing system. In order to solve this problem, an underwater pulse power discharge system was established, the circuit oscillation generation conditions were analyzed and the circuit oscillation suppression method was proposed. Firstly, the system structure was introduced and the charging model of the energy storage capacitor was established by the state space average method. Next, the electrode high-voltage breakdown model was established through COMSOL software, the electrode breakdown process was analyzed according to the electron density distribution image, and the plasma channel impedance was estimated based on the conductivity simulation results. Then the underwater pulse power discharge process and the circuit oscillation generation condition were analyzed, and the circuit oscillation suppression strategy of using the thyristor to replace the gas spark switch was proposed. Finally, laboratory experiments were carried out to verify the precision of the theoretical model and the suppression effect of circuit oscillation. The experimental results show that the voltage variation of the energy storage capacitor, the impedance change of the pulse power discharge process, and the equivalent circuit in each discharge stage were consistent with the theoretical model. The proposed oscillation suppression strategy cannot only prevent the damage caused by circuit oscillation but also reduce the damping oscillation time by77.1%, which can greatly improve the stability of the system. This research has potential application value in the field of underwater pulse power discharge for reservoir reconstruction.

A cladding-pumping based power-scaled noise-like and dissipative soliton pulse fiber laser

We report a high-average-power noise-like pulse(NLP) and dissipative soliton(DS) pulse fiber laser. Average power as high as 4.8 W could be obtained at the fundamental mode-locked repetition rate. The NLP can also be transformed into a more powerful DS mode-locking state by optimizing the polarization and losses of intra-cavity pulses in the nonlinear polarization evolution regime. The operation mode between the NLP and DS can be switched, and the laser output performance in both modes has been studied. The main advantage of this work is switchable high-power operation between the NLP and DS. In comparison with conventional single-mode NLP fiber lasers, the multi-function high-power optical source will greatly push its application in supercontinuum generation, coherence tomography, and industrial processing.

Synthesis and properties of Cr-Al-Si-N films deposited by hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and DC pulse sputtering

The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere.By varying the sputtering current of the AlSi target in the range of 0-2.5 A,both the Al and Si contents in the films increased gradually from 0 to 19.1% and 11.1% (mole fraction),respectively.The influences of the AlSi cathode DC pulse current on the microstructure,phase constituents,mechanical properties,and oxidation behaviors of the Cr-Al-Si-N films were investigated systematically.The results indicate that the as-deposited Cr-Al-Si-N films possess the typical nanocomposite structure,namely the face centered cubic (Cr,Al)N nano-crystallites are embedded in the amorphous Si3N4 matrix.With increasing the Al and Si contents,the hardness of the film first increases from 20.8 GPa for the CrN film to the peak value of 29.4 GPa for the Cr0.23Al0.14Si0.07 N film,and then decreases gradually.In the meanwhile,the Cr0.23Al0.14Si0.07N film also possesses excellent high-temperature oxidation resistance that is much better than that of the CrN film at 900 or 1000 °C.

Conceptual design of a 15-TW pulsed-power accelerator for high-energy-densityephysics experiments

We have developed a conceptual design of a 15-TW pulsed-power accelerator based on the linear-transformer-driver(LTD)architecture described by Stygar[W.A.Stygar et al.,Phys.Rev.ST Accel.Beams 18,110401(2015)].The driver will allow multiple,high-energy-density experiments per day in a university environment and,at the same time,will enable both fundamental and integrated experiments that are scalable to larger facilities.In this design,many individual energy storage units(bricks),each composed of two capacitors and one switch,directly drive the target load without additional pulse compression.Ten LTD modules in parallel drive the load.Each module consists of 16 LTD cavities connected in series,where each cavity is powered by 22 bricks connected in parallel.This design stores up to 2.75 MJ and delivers up to 15 TW in 100 ns to the constant-impedance,water-insulated radial transmission lines.The transmission lines in turn deliver a peak current as high as 12.5 MA to the physics load.To maximize its experimental value and flexibility,the accelerator is coupled to a modern,multibeam laser facility(four beams with up to 5 kJ in 10 ns and one beam with up to 2.6 kJ in 100 ps or less)that can provide auxiliary heating of the physics load.The lasers also enable advanced diagnostic techniques such as X-ray Thomson scattering and multiframe and three-dimensional radiography.The coupled accelerator-laser facility will be the first of its kind and be capable of conducting unprecedented high-energy-densityephysics experiments.

High-power terahertz pulse sensor with overmoded structure

Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investi-gated. The distribution of electromagnetic field components, voltage standing wave ratio （VSWR）, and the average electric field in the silicon block are obtained by using the three-dimensional finite-difference time-domain （FDTD） method. By adjusting several factors （such as the length, width, height and specific resistance of the silicon block） a novel sensor with optimal structural parameters that can be used as a power measurement device for high power terahertz pulse directly is proposed. The results show that the sensor has a relative sensitivity of about 0.24 kW 1, with a fluctuation of relative sensitivity of no more than ±22%, and the maximum of VSWR is 2.74 for 0.3-0.4 THz band.

Development of high frequency pulse power source using two powersfor TIG welding

A high frequency pulse power source for TIG welding is developed. The structure of two powers is adopted. The by pass circuit effectively eliminates the effect of the cable equivalent inductance. The maximum frequency of the output pulse current reaches to 16 kHz . The base current and the peak current can be regulated separately.

A new method for measuring the pulse-front distortion of arbitrary shapes in high-power ultrashort laser systems

We present a new method that can be used to calculate pulse-front distortion by measuring the spectral interference of two point-diffraction fields in their overlapped district. We demonstrate, for the first time, the measurement of the pulse-front distortion of the pulse from a complex multi-pass amplification system, which exists in almost all high-power laser systems, and obtain the irregular pulse-front distribution. The method presented does not need any reference light or assumption about the pulse-front distribution, and has an accuracy of several femtoseconds.

Review of high-power pulsed systems at the Institute of High Current Electronics

In this paper,we give a review of some most powerful pulsed systems developed at the Institute of High Current Electronics(HCEI),Siberian Branch,Russian Academy of Sciences,and describe latest achievements of the teams dealing with these installations.Besides the presented high-power systems,HCEI performs numerous investigations using much less powerful generators.For instance,last year much attention was paying to the research and development of the intense low-energy(<200 kV)high-current electron and ion beam and plasma sources,and their application in the technology[1-3].

Inverter power supply system for high-power twin-wire pulsed GMAW

A type of novel inverter power supply system for high-power twin-wire pulsed gas metal arc welding （GMAW） is presented mainly for dealing with the disadvantages of the conventional power supply for twin-wire pulsed GMA W of which the output power is generally difficult to increase due to limitations of the power of semiconductors and the power density of magnetic devices. In the power supplies for the master and slave arcs, the digital signal processor （DSP） TMS320F28335 is used to form the DSP- based synergic control system for parallel high-power pulsed GMA W, which achieves high-power output of two parallel inverters controlled by a single DSP ; master-slave communication is achieved by using e controller area network （eCAN）module of DSP, thas realizing anti-phase pulse output of high-power twin-wire pulsed GMA W and reducing the interference between twin arcs. The experiment results demonstrate that the designed inverter power supply system for high-power twin-wire pulsed GMAW can bring about high-power efficiency of welding, stable welding process and proper formation of welds.

Trends in ultrashort and ultrahigh power laser pulses based on optical parametric chirped pulse amplification

Since the proof-of-principle demonstration of optical parametric amplification to efficiently amplify chirped laser pulses in 1992, optical parametric chirped pulse amplification（OPCPA） became the most promising method for the amplification of broadband optical pulses. In the meantime, we are witnessing an exciting progress in the development of powerful and ultrashort pulse laser systems that employ chirped pulse parametric amplifiers. The output power and pulse duration of these systems have ranged from a few gigawatts to hundreds of terawatts with a potential of tens of petawatts power level. Meanwhile, the output pulse duration based on optical parametric amplification has entered the range of fewoptical-cycle field. In this paper, we overview the basic principles, trends in development, and current state of the ultrashort and laser systems based on OPCPA, respectively.

Short-pulse high-power microwave breakdown at high pressures

The fluid model is proposed to investigate the gas breakdown driven by a short-pulse（such as a Gaussian pulse） highpower microwave at high pressures.However,the fluid model requires specification of the electron energy distribution function（EEDF）;the common assumption of a Maxwellian EEDF can result in the inaccurate breakdown prediction when the electrons are not in equilibrium.We confirm that the influence of the incident pulse shape on the EEDF is tiny at high pressures by using the particle-in-cell Monte Carlo collision（PIC-MCC） model.As a result,the EEDF for a rectangular microwave pulse directly derived from the Boltzmann equation solver Bolsig＋ is introduced into the fluid model for predicting the breakdown threshold of the non-rectangular pulse over a wide range of pressures,and the obtained results are very well matched with those of the PIC-MCC simulations.The time evolution of a non-rectangular pulse breakdown in gas,obtained by the fluid model with the EEDF from Bolsig＋,is presented and analyzed at different pressures.In addition,the effect of the incident pulse shape on the gas breakdown is discussed.

Compact intense electron-beam accelerators based on high energy density liquid pulse forming lines

This paper provides a review of the compact intense electron-beam accelerators (IEBAs) based on liquid pulse forming lines (PFLs) that havebeen developed at the National University of Defense Technology (NUDT) in China. The history and roadmap of the compact IEBAs used todrive high-power microwave (HPM) devices at NUDT are reviewed. The properties of both de-ionized water and glycerin as energy storagemedia are presented. Research into the breakdown properties of liquid dielectrics and the desire to maximize energy storage have resulted in theinvention of several coaxial PFLs with different electromagnetic structures, which are detailed in this paper. These high energy density liquidPFLs have been used to increase the performance of IEBA subsystems, based on which the SPARK (Single Pulse Accelerator with spark gaps)and HEART (High Energy-density Accelerator with Repetitive Transformer) series of IEBAs were constructed. This paper also discusses howthese compact IEBAs have been used to drive typical HPM devices and concludes by summarizing the associated achievements and theconclusions that can be drawn from the results.

High current pulse forming network switched by static induction thyristor

A high-current pulse forming network (PFN) has been developed for applications to artificial solar-wind generation. It is switched by staticinduction thyristor (SIThy) and is capable of generating pulsed current of ~9.7 kA for a time duration of ~1 ms. The SIThy switch module ismade that it can be controlled by an optical signal and it can be operated at elevated electrical potential. The experiments reported in this paperused two switch modules connected in series for maximum operating voltage of 3.5 kV. The experimental results have demonstrated a pulsedhigh-current generator switched by semiconductor devices, as well as the control and operation of SIThy for pulsed power application.

Effects of microwave pulse-width damage on a bipolar transistor

This paper presents a theoretical study of the pulse-width effects on the damage process of a typical bipolar transistor caused by high power microwaves（HPMs） through the injection approach.The dependences of the microwave damage power,P,and the absorbed energy,E,required to cause the device failure on the pulse width τ are obtained in the nanosecond region by utilizing the curve fitting method.A comparison of the microwave pulse damage data and the existing dc pulse damage data for the same transistor is carried out.By means of a two-dimensional simulator,ISE-TCAD,the internal damage processes of the device caused by microwave voltage signals and dc pulse voltage signals are analyzed comparatively.The simulation results suggest that the temperature-rising positions of the device induced by the microwaves in the negative and positive half periods are different,while only one hot spot exists under the injection of dc pulses.The results demonstrate that the microwave damage power threshold and the absorbed energy must exceed the dc pulse power threshold and the absorbed energy,respectively.The dc pulse damage data may be useful as a lower bound for microwave pulse damage data.

Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

The high power microwave （HPM） damage effect on the AIGaAs/InGaAs pseudomorphic high electron mobility transistor （pHEMT） is studied by simulation and experiments. Simulated results suggest that the HPM damage to pHEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to pHEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ^-0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of pHEMT. Finally the interior observation of damaged samples by scanning electron microscopy （SEM） illustrates that the failure mechanism of the HPM damage to pHEMT is indeed device bum-out and the location beneath the gate near the source side is most susceptible to bum-out, which is in accordance with the simulated results.

Design and study of a C-band pulse compressor for the SXFEL linac

A C-band RF pulse compressor is in development at SINAP It comprises of two resonant cavities,two mode convertors and a 3 dB power divider.TE_(0.1.15)mode is selected for obtaining higher quality factor Q_0 of the RF pulse compressor cavities,so that the power gain factor can be 3.2,which is supposed to multiply the RF power from 50 MW to 1 60 MW.In this paper,we report our work on C-band RF pulse compressor,namely the design simulation and cold test results.

The pulsed microwave damage trend of a bipolar transistor as a function of pulse parameters

In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwaves（HPMs）,and investigate the thermal accumulation effect as a function of pulse repetition frequency（PRF） and duty cycle.A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density.The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz.The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time.Adopting the fitting method,the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained.Moreover,the accumulation temperature decreases with duty cycle increasing for a certain mean power.

Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves

A two-dimensional model of the silicon NPN monolithic composite transistor is established for the first time by utilizing the semiconductor device simulator, Sentaurus-TCAD. By analyzing the internal distributions of electric field, current density, and temperature of the device, a detailed investigation on the damage process and mechanism induced by high-power microwaves （HPM） is performed. The results indicate that the temperature elevation occurs in the negative half-period and the temperature drop process is in the positive half-period under the HPM injection from the output port. The damage point is located near the edge of the base-emitter junction of T2, while with the input injection it exists between the base and the emitter of T2. Comparing these two kinds of injection, the input injection is more likely to damage the device than the output injection. The dependences of the damage energy threshold and the damage power threshold causing the device failure on the pulse-width are obtained, and the formulas obtained have the same form as the experimental equations, which demonstrates that more power is required to destroy the device if the pulse-width is shorter. Furthermore, the simulation result in this paper has a good coincidence with the experimental result.