Anti-allergic Effects of Ginsenosides Extracted by High Temperature and High Pressure Method

Ginseng（Panax ginseng C. A. Mey.） is a traditional medicinal herb in Asia. Studies have shown that ginsenosides significantly affect immnnoregulation and rare ginsenosides have anti-allergic effects. In this research, a high temperature and high pressure method was utilized to increase the contents of rare ginsenosides in the ginseng extract（GE）. The anti-allergic effects of this extract were investigated in vivo. Water was used as the extraction solvent in extracting the rare ginsenosides via the high temperature and high pressure method. Extraction time and temperature were investigated in order to increase the contents of rare ginsenosides. Rare ginsenosides were qualitatively analyzed by HPLC-ESI-MS and quantitatively analyzed by HPLC-UV. Anti-allergic effects of the extracts were assessed using the ovalbumin（OVA）-induced allergic asthma model in vivo. An extraction temperature of 145 ℃ and extraction time of 2.0 h were chosen as the optimal conditions. Compared with traditional method, the contents of total rare ginsenosides extracted were considerably higher using the new method, that is, 14.74 times that extracted by the traditional method. In our in vivo experiments, treatment with high concentration GE may have anti-allergic erects in decreasing the total amount of IgE in serum and IL-4 in bronchoalveolar lavage fluid（BALF）, aud in improving the ratio of CD4^＋ to CD8^＋ T cells. The high temperature and high pressure method was an effective method to obtain GE containing more rare ginsenosides, which maybe become anti-allergic agents.

Modeling of fluid dynamics interacting with ductile fraction propagation in high pressure pipeline

This paper presents a computational model for the fluid dynamics in a fractured ductile pipe under high pressure. The pressure profile in front of the crack tip, which is the driving source of crack propagation, is computed using a nonlinear wave equation. The solution is coupled with a one dimensional choked flow analysis behind the crack. The simulation utilizes a high order optimized prefactored compact-finite volume method in space, and low dispersion and dissipation Runge-Kutta in time. As the pipe fractures the rapid depressurization take place inside the pipe and the propagation of the crack-induced waves strongly influences the outflow dynamics. Consistent with the experimental observation, the model predicts the expansion wave inside the pipe, and the reflection and outflow of the wave. The model also helps characterize the propagation of the crack dynamics and fluid flows around the tip of the crack.

GaN晶体的生长及其低维材料的制备

Wurtzite strcture gallium nitride, GaN,a direct bandgap semiconductor (3.4 eV at room temperature),is an ideal material for fabrication of blue/green light emit ti ng diodes, laser diodes,and high power integrated circuits.Recent progress in th in film crystal technique has realized the output of blue semiconductor lasers w i th a lifetime of over 10000 hours under continuous wave operation at room tempe r ature.So far GaN and its ternary indium and aluminum alloys are grown almost uni v ersally on foreign substrates with varying lattice mismatches.The mismatch undou btedly results in a significant dislocation density in the grown films.Hence it is necessary to grow single crystal GaN to be used as substrates for improvement of laser diodes.On the other hand,low dimensional GaN materials such as nanocry stalline powder,nanocrystal assembled bulk(nanophase) and nano wires are very u seful in both fundamental mesoscopic research and future development of GaN nano devices.Here we report our main recent progresses on the crystal growth of GaN a nd the preparation of its low dimensional materials.