A high-sensitive terahertz detector operating at room temperature was demonstrated based on parametric upconversion.A nanosecond 1064-nm Nd:YAG laser was used to pump the parametric up-conversion detector and the upco...A high-sensitive terahertz detector operating at room temperature was demonstrated based on parametric upconversion.A nanosecond 1064-nm Nd:YAG laser was used to pump the parametric up-conversion detector and the upconversion from terahertz wave to NIR laser was realized in a lithium niobate crystal.The minimum detectable terahertz energy of 9 p J was realized with the detection dynamic range of 54 d B,which was three orders of magnitude higher than that of commercial Golay cell.The detectable terahertz frequency range of the detection system was 0.90 Thz–1.83 THz.Besides,the effects of pump energy and effective gain length on the detection sensitivity were studied in experiment.The results showed that higher pump energy and longer effective gain length are helpful for improving the detection sensitivity of parametric up-conversion detector.展开更多
Van der Waals heterostructures based on the two-dimensional(2D)semiconductor materials have attracted increasing attention due to their attractive properties.In this work,we demonstrate a high-sensitive back-gated pho...Van der Waals heterostructures based on the two-dimensional(2D)semiconductor materials have attracted increasing attention due to their attractive properties.In this work,we demonstrate a high-sensitive back-gated phototransistor based on the vertical HfSe_(2)/MoS_(2)heterostructure with a broad-spectral response from near-ultraviolet to near-infrared and an efficient gate tunability for photoresponse.Under bias,the phototransistor exhibits high responsivity of up to 1.42×103A/W,and ultrahigh specific detectivity of up to 1.39×1015cm·Hz^(1/2)·W^(-1).Moreover,it can also operate under zero bias with remarkable responsivity of 10.2 A/W,relatively high specific detectivity of 1.43×1014cm·Hz^(1/2)·W^(-1),ultralow dark current of 1.22 f A,and high on/off ratio of above 105.These results should be attributed to the fact that the vertical HfSe_(2)/MoS_(2)heterostructure not only improves the broadband photoresponse of the phototransistor but also greatly enhances its sensitivity.Therefore,the heterostructure provides a promising candidate for next generation high performance phototransistors.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.U1837202,61775160,61771332,62011540006,and 62175182)。
文摘A high-sensitive terahertz detector operating at room temperature was demonstrated based on parametric upconversion.A nanosecond 1064-nm Nd:YAG laser was used to pump the parametric up-conversion detector and the upconversion from terahertz wave to NIR laser was realized in a lithium niobate crystal.The minimum detectable terahertz energy of 9 p J was realized with the detection dynamic range of 54 d B,which was three orders of magnitude higher than that of commercial Golay cell.The detectable terahertz frequency range of the detection system was 0.90 Thz–1.83 THz.Besides,the effects of pump energy and effective gain length on the detection sensitivity were studied in experiment.The results showed that higher pump energy and longer effective gain length are helpful for improving the detection sensitivity of parametric up-conversion detector.
基金Project supported by the National Natural Science Foundation of China(Grant No.51702245)the Fundamental Research Funds for the Central Universities(Grant No.WUT2021III065JC)
文摘Van der Waals heterostructures based on the two-dimensional(2D)semiconductor materials have attracted increasing attention due to their attractive properties.In this work,we demonstrate a high-sensitive back-gated phototransistor based on the vertical HfSe_(2)/MoS_(2)heterostructure with a broad-spectral response from near-ultraviolet to near-infrared and an efficient gate tunability for photoresponse.Under bias,the phototransistor exhibits high responsivity of up to 1.42×103A/W,and ultrahigh specific detectivity of up to 1.39×1015cm·Hz^(1/2)·W^(-1).Moreover,it can also operate under zero bias with remarkable responsivity of 10.2 A/W,relatively high specific detectivity of 1.43×1014cm·Hz^(1/2)·W^(-1),ultralow dark current of 1.22 f A,and high on/off ratio of above 105.These results should be attributed to the fact that the vertical HfSe_(2)/MoS_(2)heterostructure not only improves the broadband photoresponse of the phototransistor but also greatly enhances its sensitivity.Therefore,the heterostructure provides a promising candidate for next generation high performance phototransistors.
