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Brief Review of Silver Sinter-bonding Processing for Packaging High-temperature Power Devices 被引量:1
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作者 Haidong Yan Peijie Liang +1 位作者 Yunhui Mei Zhihong Feng 《Chinese Journal of Electrical Engineering》 CSCD 2020年第3期25-34,共10页
Silver sintering is receiving increasing attention due to its novel die-attach technique for high-temperature power electronics.Excellent thermal conductivity,high melting point/remelting temperature and low-temperatu... Silver sintering is receiving increasing attention due to its novel die-attach technique for high-temperature power electronics.Excellent thermal conductivity,high melting point/remelting temperature and low-temperature sintering behaviors of the silver sintered attachment meet the requirements of high-temperature applications for power devices,specifically SiC devices.The merits and demerits of the existing pressure-assisted sintering and pressure-less sintering techniques using nano-scale,micro-scale and micro-nano-scale hybrid silver sintered materials are separately presented.The emerging rapid sintering approaches,such as the electric-assisted approach,are briefly introduced and the technical outlook is provided.In addition,the study highlights the importance of creating a brief resource guide on using the correct sintering methods. 展开更多
关键词 Pressure-less sintering pressure-assisted nanosilver paste high-temperature power module insulated gate bipolar translators(IGBT) silicon carbide(SiC)
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高温硅功率器件所用硅单晶电阻率的选取 被引量:1
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作者 潘广问 《襄樊学院学报》 2001年第5期22-24,共3页
在进行高温硅功率器件设计时,为保证器件的温度特性,必须正确、恰当地选取硅单晶电阻率,理论分析与实验相结合,可根据硅功率器件额定结温确定硅单晶电阻率的上限值,根据硅功率器件反向击穿电压确定硅单晶电阻率的下限值,在此基础上,设... 在进行高温硅功率器件设计时,为保证器件的温度特性,必须正确、恰当地选取硅单晶电阻率,理论分析与实验相结合,可根据硅功率器件额定结温确定硅单晶电阻率的上限值,根据硅功率器件反向击穿电压确定硅单晶电阻率的下限值,在此基础上,设计制造了满足坦克用的高温硅功率器件,额定结温达190℃. 展开更多
关键词 高温硅功率器件 硅单晶电阻率 上限值 下限值 半导体器件 反向击穿电压
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