Electromigration is a main challenge in the pursuit of power electronics, because physical limit to increase current density in power electronics is electromigration (EM), whereas much higher electrical current and vo...Electromigration is a main challenge in the pursuit of power electronics, because physical limit to increase current density in power electronics is electromigration (EM), whereas much higher electrical current and voltage are required for power electronics packaging. So the effect of EM is an important issue in applications where high current densities are used, such as in microelectronics and related structures (e.g., Power ICs). Since the structure size of integrated circuits (ICs) decreases and the practical significance of this effect increases, the result is EM failure. On the other hand, in the next generation power electronics technology electrical current density is expected to exceed 10<sup>7</sup> A/cm<sup>2</sup> which is another challenge. This review work has been carried out to identify the mechanism of EM damage in power electronics (e.g., pure metallization and solder joints) and also how to control this kind of damage.展开更多
mploying pure aluminum for address lines of TFT-LCDs has a severe problem of hillock formation at elevated temperature. However, in the case of large TFT-LCDs more than 254 mm, it is impossible to use refractory metal...mploying pure aluminum for address lines of TFT-LCDs has a severe problem of hillock formation at elevated temperature. However, in the case of large TFT-LCDs more than 254 mm, it is impossible to use refractory metals for address lines because of their high resistivity. The Al-Ti alloy films for address lines of TFT-LCDs were studied and it was found that Al-Ti alloy film has excellent resistance of Al-Ti alloy to hillocks. The effect of Ti content on properties of Al-Ti alloy film was investigated.展开更多
Ⅰ. INTRODUCTION Neodymium yttrium aluminium tetraborate [Nd<sub>x</sub>Y<sub>1-x</sub>AL （BO<sub>3</sub>）<sub>4</sub>, （NYAB）] is a functional material which is sel...Ⅰ. INTRODUCTION Neodymium yttrium aluminium tetraborate [Nd<sub>x</sub>Y<sub>1-x</sub>AL （BO<sub>3</sub>）<sub>4</sub>, （NYAB）] is a functional material which is self-activated and self-frequent doubling. It belongs to an incongruent compound in the phase diagram, so the flux method is used for its crystal growth.展开更多
文摘Electromigration is a main challenge in the pursuit of power electronics, because physical limit to increase current density in power electronics is electromigration (EM), whereas much higher electrical current and voltage are required for power electronics packaging. So the effect of EM is an important issue in applications where high current densities are used, such as in microelectronics and related structures (e.g., Power ICs). Since the structure size of integrated circuits (ICs) decreases and the practical significance of this effect increases, the result is EM failure. On the other hand, in the next generation power electronics technology electrical current density is expected to exceed 10<sup>7</sup> A/cm<sup>2</sup> which is another challenge. This review work has been carried out to identify the mechanism of EM damage in power electronics (e.g., pure metallization and solder joints) and also how to control this kind of damage.
文摘mploying pure aluminum for address lines of TFT-LCDs has a severe problem of hillock formation at elevated temperature. However, in the case of large TFT-LCDs more than 254 mm, it is impossible to use refractory metals for address lines because of their high resistivity. The Al-Ti alloy films for address lines of TFT-LCDs were studied and it was found that Al-Ti alloy film has excellent resistance of Al-Ti alloy to hillocks. The effect of Ti content on properties of Al-Ti alloy film was investigated.
文摘Ⅰ. INTRODUCTION Neodymium yttrium aluminium tetraborate [Nd<sub>x</sub>Y<sub>1-x</sub>AL （BO<sub>3</sub>）<sub>4</sub>, （NYAB）] is a functional material which is self-activated and self-frequent doubling. It belongs to an incongruent compound in the phase diagram, so the flux method is used for its crystal growth.
