Equilibrium constant K_T and free energy of formation △G°of the reaction (Ga_(As)As_(Ga)+(V_(Ga))(2|-)+(e|-)=As_(Ga)V(G|-)a+Ga_(As)V(G|-)a were deduced as: K_T=(1.088×10~8-1.09×10^(11)·1/T)~2 △G&...Equilibrium constant K_T and free energy of formation △G°of the reaction (Ga_(As)As_(Ga)+(V_(Ga))(2|-)+(e|-)=As_(Ga)V(G|-)a+Ga_(As)V(G|-)a were deduced as: K_T=(1.088×10~8-1.09×10^(11)·1/T)~2 △G°=-2RTln(1.088×10~8-1.09×10^(11)·1/T) These seem to be applicable into practice under certain conditions.展开更多
Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method, followed by thermal annealing to form the Si nanocrystals（Si-NCs） embedded in Si Nx floating gate MOS structures. The c...Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method, followed by thermal annealing to form the Si nanocrystals（Si-NCs） embedded in Si Nx floating gate MOS structures. The capacitance–voltage（C–V）, current–voltage（I–V）, and admittance–voltage（G–V） measurements are used to investigate the charging characteristics. It is found that the maximum flat band voltage shift（△VFB） due to full charged holes（～ 6.2 V） is much larger than that due to full charged electrons（～ 1 V）. The charging displacement current peaks of electrons and holes can be also observed by the I–V measurements, respectively. From the G–V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the Si O2/Si-substrate interface. Combining the results of C–V and G–V measurements, we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism. The evolution of G–V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.展开更多
Photoelectron is the foundation of latent image formation, the decay process of photoelectrons is influenced by all kinds of trapping centres in silver halide. By analysing the mechanism of latent image formation it i...Photoelectron is the foundation of latent image formation, the decay process of photoelectrons is influenced by all kinds of trapping centres in silver halide. By analysing the mechanism of latent image formation it is found that electron trap, hole trap, and one kind of recombination centre where free electron and trapped hole recombine are the main trapping centres in silver halide. Different trapping centres have different influences on the photoelectron behaviour. The effects of all kinds of typical trapping centres on the decay of photoelectrons are systematically investigated by solving the photoelectron decay kinetic equations. The results are in agreement with those obtained in the microwave absorption dielectric spectrum experiment.展开更多
The behaviours of three types of hot-hole injections in ultrashort channel lightly doped drain （LDD） nMOSFETs with ultrathin oxide under an alternating stress have been compared. The three types of hot-hole injectio...The behaviours of three types of hot-hole injections in ultrashort channel lightly doped drain （LDD） nMOSFETs with ultrathin oxide under an alternating stress have been compared. The three types of hot-hole injections, i.e. low gate voltage hot hole injection （LGVHHI）, gate-induced drain leakage induced hot-hole injection （GIDLIHHI） and substrate hot-hole injection （SHHI）, have different influences on the devices damaged already by the previous hot electron injection （HEI） because of the different locations of trapping holes and interface states induced by the three types of injections, i.e. three types of stresses. Experimental results show that GIDLIHHI and LGVHHI cannot recover the degradation of electron trapping, but SHHI can. Although SHHI can recover the device＇s performance, the recovery is slight and reaches saturation quickly, which is suggested here to be attributed to the fact that trapped holes are too few and the equilibrium is reached between the trapping and releasing of holes which can be set up quickly in the ultrathin oxide.展开更多
Based on the three-dimensional dispersive finite difference time domain method and Maxwell stress tensor equation,the optical trapping properties of nanoparticle placed on the gold film with periodic circular holes ar...Based on the three-dimensional dispersive finite difference time domain method and Maxwell stress tensor equation,the optical trapping properties of nanoparticle placed on the gold film with periodic circular holes are investigated numerically. Surface plasmon polaritons are excited on the metal-dielectric interface, with particular emphasis on the crucial role in tailoring the optical force acting on a nearby nanoparticle. Utilizing a first order corrected electromagnetic field components for a fundamental Gaussian beam, the incident beam is added into the calculation model of the proposed method. To obtain the detailed trapping properties of nanoparticle, the selected calculations on the effects of beam waist radius, sizes of nanoparticle and circular holes, distance between incident Gaussian beam and gold film, material of nanoparticle and polarization angles of incident wave are analyzed in detail to demonstrate that the optical-trapping force can be explained as a virtual spring which has a restoring force to perform positive and negative forces as a nanoparticle moves closer to or away from the centers of circular holes. The results of optical trapping properties of nanoparticle in the vicinity of the gold film could provide guidelines for further research on the optical system design and manipulation of arbitrary composite nanoparticles.展开更多
文摘Equilibrium constant K_T and free energy of formation △G°of the reaction (Ga_(As)As_(Ga)+(V_(Ga))(2|-)+(e|-)=As_(Ga)V(G|-)a+Ga_(As)V(G|-)a were deduced as: K_T=(1.088×10~8-1.09×10^(11)·1/T)~2 △G°=-2RTln(1.088×10~8-1.09×10^(11)·1/T) These seem to be applicable into practice under certain conditions.
基金Project supported by the National Basic Research Program of China(Grant No.2010CB934402)the National Natural Science Foundation of China(Grant No.11374153)
文摘Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method, followed by thermal annealing to form the Si nanocrystals（Si-NCs） embedded in Si Nx floating gate MOS structures. The capacitance–voltage（C–V）, current–voltage（I–V）, and admittance–voltage（G–V） measurements are used to investigate the charging characteristics. It is found that the maximum flat band voltage shift（△VFB） due to full charged holes（～ 6.2 V） is much larger than that due to full charged electrons（～ 1 V）. The charging displacement current peaks of electrons and holes can be also observed by the I–V measurements, respectively. From the G–V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the Si O2/Si-substrate interface. Combining the results of C–V and G–V measurements, we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism. The evolution of G–V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.
基金Project supported by the National Natural Science Foundation of China （Grant Nos 10274017 and 10354001）, and the Natural Science Foundation of Hebei Province, China （Grant Nos 103097 and 603138）.
文摘Photoelectron is the foundation of latent image formation, the decay process of photoelectrons is influenced by all kinds of trapping centres in silver halide. By analysing the mechanism of latent image formation it is found that electron trap, hole trap, and one kind of recombination centre where free electron and trapped hole recombine are the main trapping centres in silver halide. Different trapping centres have different influences on the photoelectron behaviour. The effects of all kinds of typical trapping centres on the decay of photoelectrons are systematically investigated by solving the photoelectron decay kinetic equations. The results are in agreement with those obtained in the microwave absorption dielectric spectrum experiment.
文摘The behaviours of three types of hot-hole injections in ultrashort channel lightly doped drain （LDD） nMOSFETs with ultrathin oxide under an alternating stress have been compared. The three types of hot-hole injections, i.e. low gate voltage hot hole injection （LGVHHI）, gate-induced drain leakage induced hot-hole injection （GIDLIHHI） and substrate hot-hole injection （SHHI）, have different influences on the devices damaged already by the previous hot electron injection （HEI） because of the different locations of trapping holes and interface states induced by the three types of injections, i.e. three types of stresses. Experimental results show that GIDLIHHI and LGVHHI cannot recover the degradation of electron trapping, but SHHI can. Although SHHI can recover the device＇s performance, the recovery is slight and reaches saturation quickly, which is suggested here to be attributed to the fact that trapped holes are too few and the equilibrium is reached between the trapping and releasing of holes which can be set up quickly in the ultrathin oxide.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61701382,61601355,and 61571355)the China Postdoctoral Science Foundation(Grant No.2016M602770)the Xi’an Technological University Principal Foundation Key Project,China(Grant No.XAGDXJJ18001)
文摘Based on the three-dimensional dispersive finite difference time domain method and Maxwell stress tensor equation,the optical trapping properties of nanoparticle placed on the gold film with periodic circular holes are investigated numerically. Surface plasmon polaritons are excited on the metal-dielectric interface, with particular emphasis on the crucial role in tailoring the optical force acting on a nearby nanoparticle. Utilizing a first order corrected electromagnetic field components for a fundamental Gaussian beam, the incident beam is added into the calculation model of the proposed method. To obtain the detailed trapping properties of nanoparticle, the selected calculations on the effects of beam waist radius, sizes of nanoparticle and circular holes, distance between incident Gaussian beam and gold film, material of nanoparticle and polarization angles of incident wave are analyzed in detail to demonstrate that the optical-trapping force can be explained as a virtual spring which has a restoring force to perform positive and negative forces as a nanoparticle moves closer to or away from the centers of circular holes. The results of optical trapping properties of nanoparticle in the vicinity of the gold film could provide guidelines for further research on the optical system design and manipulation of arbitrary composite nanoparticles.
基金supported by the National Natural Science Foundation of China(Nos.21573128,11504200,20973101,21373123)the Natural Science Foundation of Shandong Province,China(No.ZR2013BM027)~~
