A novel band to band hot electron programming flash memory device,which features programming with high speed,low voltage,low power consumption,large read current and short access time,is proposed.The new memory cell...A novel band to band hot electron programming flash memory device,which features programming with high speed,low voltage,low power consumption,large read current and short access time,is proposed.The new memory cell is programmed by band to band tunneling induced hot electron (BBHE) injection method at the drain,and erased by Fowler Nordheim tunneling through the source region.The work shows that the programming control gate voltage can be reduced to 8V,and the drain leakage current is only 3μA/μm.Under the proposed operating conditions,the program efficiency and the read current rise up to 4×10 -4 and 60μA/μm,respectively,and the program time can be as short as 16μs展开更多
Experiments are used to study the fabrication of polymer microfluidic chip with hot embossing method. The pattern fidelity with respect to the process parameters is analyzed. Experiment results show that the relations...Experiments are used to study the fabrication of polymer microfluidic chip with hot embossing method. The pattern fidelity with respect to the process parameters is analyzed. Experiment results show that the relationship between the imprint temperature and the microchannel width is approximately exponential. However, the depth of micro channel isn＇t sensitive to the imprint temperature. When the imprint pressure is larger than 1 MPa and the imprint time is longer than 2 min, the increasing of imprint pressure and holding time has little impact on the microchannel width. So over long holding time is not needed in hot embossing. Based on the experiment analysis, a series of optimization process parameters is obtained and a fine microfluidic chip is fabricated. The electrophoresis separation experiment are used to verify the microfluidic chip performance after bonding. The results show that 100bp-ladder DNA sample can be separated in less than 5 min successfully.展开更多
The degradation produced by hot carrier （HC） in ultra-deep sub-micron n-channel metal oxide semiconductor field effect transistor （nMOSFET） has been analyzed in this paper. The generation of negatively charged int...The degradation produced by hot carrier （HC） in ultra-deep sub-micron n-channel metal oxide semiconductor field effect transistor （nMOSFET） has been analyzed in this paper. The generation of negatively charged interface states is the predominant mechanism for the ultra-deep sub-micron nMOSFET. According to our lifetime model of p-channel MOFET （pMOFET） that was reported in a previous publication, a lifetime prediction model for nMOSFET is presented and the parameters in the model are extracted. For the first time, the lifetime models of nMOFET and pMOSFET are unified. In addition, the model can precisely predict the lifetime of the ultra-deep sub-micron nMOSFET and pMOSFET.展开更多
Φ8 mm 00Cr19Ni10不锈钢(％:0．025C、18．75Cr、10．96Ni)经700℃、挤压速度9 mm／s、8道次等通道挤压后获得150-350 nm超细晶组织。通过光学显微镜,扫描和透射电镜,X-射线衍射,分析了在等通道挤压变形过程钢的微观组织演变,提出晶粒...Φ8 mm 00Cr19Ni10不锈钢(％:0．025C、18．75Cr、10．96Ni)经700℃、挤压速度9 mm／s、8道次等通道挤压后获得150-350 nm超细晶组织。通过光学显微镜,扫描和透射电镜,X-射线衍射,分析了在等通道挤压变形过程钢的微观组织演变,提出晶粒细化的位错、孪晶和动态再结晶机制,研究发现在1-4道次以孪晶细化机制为主,5-8道次以动态再结晶细化机制为主。展开更多
文摘A novel band to band hot electron programming flash memory device,which features programming with high speed,low voltage,low power consumption,large read current and short access time,is proposed.The new memory cell is programmed by band to band tunneling induced hot electron (BBHE) injection method at the drain,and erased by Fowler Nordheim tunneling through the source region.The work shows that the programming control gate voltage can be reduced to 8V,and the drain leakage current is only 3μA/μm.Under the proposed operating conditions,the program efficiency and the read current rise up to 4×10 -4 and 60μA/μm,respectively,and the program time can be as short as 16μs
基金National Hi-tech Research Development Program of China(863 Program,No.2002AA421150)Research Foundation of Doctorial Project of Ministry of Education,China(No.20030335091)
文摘Experiments are used to study the fabrication of polymer microfluidic chip with hot embossing method. The pattern fidelity with respect to the process parameters is analyzed. Experiment results show that the relationship between the imprint temperature and the microchannel width is approximately exponential. However, the depth of micro channel isn＇t sensitive to the imprint temperature. When the imprint pressure is larger than 1 MPa and the imprint time is longer than 2 min, the increasing of imprint pressure and holding time has little impact on the microchannel width. So over long holding time is not needed in hot embossing. Based on the experiment analysis, a series of optimization process parameters is obtained and a fine microfluidic chip is fabricated. The electrophoresis separation experiment are used to verify the microfluidic chip performance after bonding. The results show that 100bp-ladder DNA sample can be separated in less than 5 min successfully.
基金Project supported by the National Basic Research Program of China(Grant No.2011CBA00606)the National Natural Science Foundation of China(Grant No.61106106)
文摘The degradation produced by hot carrier （HC） in ultra-deep sub-micron n-channel metal oxide semiconductor field effect transistor （nMOSFET） has been analyzed in this paper. The generation of negatively charged interface states is the predominant mechanism for the ultra-deep sub-micron nMOSFET. According to our lifetime model of p-channel MOFET （pMOFET） that was reported in a previous publication, a lifetime prediction model for nMOSFET is presented and the parameters in the model are extracted. For the first time, the lifetime models of nMOFET and pMOSFET are unified. In addition, the model can precisely predict the lifetime of the ultra-deep sub-micron nMOSFET and pMOSFET.
文摘Φ8 mm 00Cr19Ni10不锈钢(％:0．025C、18．75Cr、10．96Ni)经700℃、挤压速度9 mm／s、8道次等通道挤压后获得150-350 nm超细晶组织。通过光学显微镜,扫描和透射电镜,X-射线衍射,分析了在等通道挤压变形过程钢的微观组织演变,提出晶粒细化的位错、孪晶和动态再结晶机制,研究发现在1-4道次以孪晶细化机制为主,5-8道次以动态再结晶细化机制为主。
