50mm 3C-SiC epilayers are grown on （100） and （111） Si substrates in a newly developed horizontal lowpressure hot-wall CVD reactor under different growth pressures and flow rates of H2 carrier gas. The structure,el...50mm 3C-SiC epilayers are grown on （100） and （111） Si substrates in a newly developed horizontal lowpressure hot-wall CVD reactor under different growth pressures and flow rates of H2 carrier gas. The structure,electrical properties, and thickness uniformity of the 3C-SiC epilayers are investigated by X-ray diffraction （XRD） ,sheet resistance measurement, and spectroscopic ellipsometry. XRD patterns show that the 3C-SiC films have excellent crystallinity. The narrowest full widths at half maximum of the SIC（200） and （111） peaks are 0.41° and 0.21°, respectively. The best electrical uniformity of the 50mm 3C-SiC films obtained by sheet resistance measurement is 2.15%. A σ/mean value of ± 5.7% in thickness uniformity is obtained.展开更多
GaN microcrystalline grains were grown by hot-wall chemical vapor deposition on Si(111)substrate.These grains with diameters of 2-4 μm were detected by scanning electron microscopy.X-ray diffraction,Fourier transform...GaN microcrystalline grains were grown by hot-wall chemical vapor deposition on Si(111)substrate.These grains with diameters of 2-4 μm were detected by scanning electron microscopy.X-ray diffraction,Fourier transformation infrared transmission spectroscopy and photoluminescence were used to analyze the structure, composition and the optical properties of the samples.The results show that the microcrystalline grains are hexagonal wurtzite GaN,and the property of the grains was greatly affected by the growth time.展开更多
文摘50mm 3C-SiC epilayers are grown on （100） and （111） Si substrates in a newly developed horizontal lowpressure hot-wall CVD reactor under different growth pressures and flow rates of H2 carrier gas. The structure,electrical properties, and thickness uniformity of the 3C-SiC epilayers are investigated by X-ray diffraction （XRD） ,sheet resistance measurement, and spectroscopic ellipsometry. XRD patterns show that the 3C-SiC films have excellent crystallinity. The narrowest full widths at half maximum of the SIC（200） and （111） peaks are 0.41° and 0.21°, respectively. The best electrical uniformity of the 50mm 3C-SiC films obtained by sheet resistance measurement is 2.15%. A σ/mean value of ± 5.7% in thickness uniformity is obtained.
文摘GaN microcrystalline grains were grown by hot-wall chemical vapor deposition on Si(111)substrate.These grains with diameters of 2-4 μm were detected by scanning electron microscopy.X-ray diffraction,Fourier transformation infrared transmission spectroscopy and photoluminescence were used to analyze the structure, composition and the optical properties of the samples.The results show that the microcrystalline grains are hexagonal wurtzite GaN,and the property of the grains was greatly affected by the growth time.
