We review the state of the art and our perspectives on silicon and hybrid silicon photonic devices for optical interconnects in datacenters. After a brief discussion of the key requirements for intra-datacenter optica...We review the state of the art and our perspectives on silicon and hybrid silicon photonic devices for optical interconnects in datacenters. After a brief discussion of the key requirements for intra-datacenter optical interconnects, we propose a wavelength-division-multiplexing(WDM)-based optical interconnect for intra-datacenter applications. Following our proposed interconnects configuration, the bulk of the review emphasizes recent developments concerning on-chip hybrid silicon microlasers and WDM transmitters, and silicon photonic switch fabrics for intra-datacenters. For hybrid silicon microlasers and WDM transmitters, we outline the remaining challenges and key issues toward realizing low power consumption, direct modulation, and integration of multiwavelength microlaser arrays. For silicon photonic switch fabrics, we review various topologies and configurations of high-port-count N-by-N switch fabrics using Mach–Zehnder interferometers and microring resonators as switch elements, and discuss their prospects toward practical implementations with active reconfiguration.For the microring-based switch fabrics, we review recent developments of active stabilization schemes at the subsystem level. Last, we outline several large challenges and problems for silicon and hybrid silicon photonics to meet for intra-datacenter applications and propose potential solutions.展开更多
We investigate in this paper the influence of slow light on the balance between the Kerr and two-photon absorption(TPA) processes in silicon slotted hybrid nonlinear waveguides. Three typical silicon photonic waveguid...We investigate in this paper the influence of slow light on the balance between the Kerr and two-photon absorption(TPA) processes in silicon slotted hybrid nonlinear waveguides. Three typical silicon photonic waveguide geometries are studied to estimate the influence of the light slow-down factor on the mode field overlap with the silicon region, as well as on the complex effective nonlinear susceptibility. It is found that slotted photonic crystal modes tend to focalize in their hollow core with increasing group index(n_G) values. Considering a hybrid integration of nonlinear polymers in such slotted waveguides, a relative decrease of the TPA process by more factor of 2 is predicted from n_G=10 to n_G=50. As a whole, this work shows that the relative influence of TPA decreases for slotted waveguides operating in the slow light regime, making them a suitable platform for third-order nonlinear optics.展开更多
Nonlinear silicon photonics has shown an ability to generate, compact chip at a potential low cost. There are still barriers limitations. In this review, hybrid structures with some manipulate, and detect optical sign...Nonlinear silicon photonics has shown an ability to generate, compact chip at a potential low cost. There are still barriers limitations. In this review, hybrid structures with some manipulate, and detect optical signals on an ultrahindering its development due to essential material specific materials developed for nonlinear silicon photonics are discussed. The combination of silicon and the nonlinear materials takes advantage of both materials, which shows great potential to improve the performance and expand the applications for nonlinear silicon photonics.展开更多
We report on the fabrication and performance of a room-temperature NO2 gas sensor based on a WO3 nanowires/porous silicon hybrid structure. The W18O49 nanowires are synthesized directly from a sputtered tungsten film ...We report on the fabrication and performance of a room-temperature NO2 gas sensor based on a WO3 nanowires/porous silicon hybrid structure. The W18O49 nanowires are synthesized directly from a sputtered tungsten film on a porous silicon （PS） layer under heating in an argon atmosphere. After a carefully controlled annealing treatment, WO3 nanowires are obtained on the PS layer without losing the morphology. The morphology, phase structure, and crystallinity of the nanowires are investigated by using field emission scanning electron microscopy （FESEM）, X-ray diffractometer （XRD）, and high-resolution transmission electron microscopy （HRTEM）. Comparative gas sensing results indicate that the sensor based on the WO3 nanowires exhibits a much higher sensitivity than that based on the PS and pure WO3 nanowires in detecting NO2 gas at room temperature. The mechanism of the WO3 nanowires/PS hybrid structure in the NO2 sensing is explained in detail.展开更多
A kind of hybrid device for acoustic noise reduction and vibration energy harvesting based on the silicon micro- perforated panel （MPP） resonant structure is investigated in the article. The critical parts of the de...A kind of hybrid device for acoustic noise reduction and vibration energy harvesting based on the silicon micro- perforated panel （MPP） resonant structure is investigated in the article. The critical parts of the device include MPP and energy harvesting membranes. They are all fabricated by means of silicon micro-electro-mechanical systems （MEMS） tech- nology. The silicon MPP has dense and accurate micro-holes. This noise reduction structure has the advantages of wide band and higher absorption coefficients. The vibration energy harvesting part is formed by square piezoelectric membranes arranged in rows. ZnO material is used as it has a good compatibility with the fabrication process. The MPP, piezo- electric membranes, and metal bracket are assembled into a hybrid device with multifunctions. The device exhibits good performances of acoustic noise absorption and acoustic-electric conversion. Its maximum open circuit voltage achieves 69.41 mV.展开更多
To enhance the microwave absorption performance of silicon carbide nanowires（SiCNWs）, SiO_2 nanoshells with a thickness of approximately 2 nm and Fe_3O_4 nanoparticles were grown on the surface of SiCNWs to form SiC...To enhance the microwave absorption performance of silicon carbide nanowires（SiCNWs）, SiO_2 nanoshells with a thickness of approximately 2 nm and Fe_3O_4 nanoparticles were grown on the surface of SiCNWs to form SiC@SiO_2@Fe_3O_4 hybrids. The microwave absorption performance of the SiC@SiO_2@Fe_3O_4 hybrids with different thicknesses was investigated in the frequency range from 2 to 18 GHz using a free-space antenna-based system. The results indicate that SiC@SiO_2@Fe_3O_4 hybrids exhibit improved microwave absorption. In particular, in the case of an SiC@SiO_2 to iron（III） acetylacetonate mass ratio of 1：3, the microwave absorption with an absorber of 2-mm thickness exhibited a minimum reflection loss of-39.58 d B at 12.24 GHz. With respect to the enhanced microwave absorption mechanism, the Fe_3O_4 nanoparticles coated on SiC@SiO_2 nanowires are proposed to balance the permeability and permittivity of the materials, contributing to the microwave attenuation.展开更多
We have developed a simple synthetic method to prepare the hybrid microspheres of CdS nanoparticles on the surface of silica microspheres modified by（3-mercaptopropyl） trimethoxysilane（MPS）. The--SH groups of MPS ...We have developed a simple synthetic method to prepare the hybrid microspheres of CdS nanoparticles on the surface of silica microspheres modified by（3-mercaptopropyl） trimethoxysilane（MPS）. The--SH groups of MPS can bind with the Cd^2＋ ions on the surface of SiO2. When thioacetamide releases H2S, the nanosized CdS particles（ 1-6 nm） will successfully be generated on the silica surface under the experimental conditions. The size of the CdS nanoparticles was found to be related to the concentration of Cd^2 ＋ feed and the size of silica spheres, the higher the concentration of Cd^2＋ and the larger of silica microspheres, the bigger the size of CdS nanoparticles. Techniques including UV, PL, TEM and XPS were used to characterize the CdS-SiO2 hybrid microspheres.展开更多
Silicon-based photonic integration has attracted the interest of semiconductor scientists because it has high luminous efficiency and electron mobility.Breakthroughs have been made in silicon-based integrated lasers o...Silicon-based photonic integration has attracted the interest of semiconductor scientists because it has high luminous efficiency and electron mobility.Breakthroughs have been made in silicon-based integrated lasers over the past few decades.Here we review three main methods of integration ofⅢ–Ⅴ materials on Si,namely direct growth,bonding,and selectivearea hetero-epitaxy.TheⅢ–Ⅴmaterials we introduced mainly include materials such as GaAs and InP.The lasers are mainly lasers of related communication bands.We also introduced the advantages and challenges of the three methods.展开更多
基金financial support from the National Science Foundation of China (NSFC)the Research Grants Council (RGC) of the Hong Kong Special Administrative Region (HKSAR) under project N_HKUST606/10+5 种基金the State Key Laboratory on Integrated Optoelectronics, ChinaOpen Fund of the State Key Laboratory on Integrated Optoelectronics under project IOSKL2013KF04the Innovation and Technology Fund (ITF) of the HKSAR under project ITS/023/14 and ITS/087/13the Proof-of-Concept Fund (PCF) of The Hong Kong University of Science and Technology (HKUST) under project no. PCF007.12/13the General Research Fund (GRF) of the HKSAR under project no. 16208114postdoctoral fellowship support from the Hong Kong Scholars Program 2013
文摘We review the state of the art and our perspectives on silicon and hybrid silicon photonic devices for optical interconnects in datacenters. After a brief discussion of the key requirements for intra-datacenter optical interconnects, we propose a wavelength-division-multiplexing(WDM)-based optical interconnect for intra-datacenter applications. Following our proposed interconnects configuration, the bulk of the review emphasizes recent developments concerning on-chip hybrid silicon microlasers and WDM transmitters, and silicon photonic switch fabrics for intra-datacenters. For hybrid silicon microlasers and WDM transmitters, we outline the remaining challenges and key issues toward realizing low power consumption, direct modulation, and integration of multiwavelength microlaser arrays. For silicon photonic switch fabrics, we review various topologies and configurations of high-port-count N-by-N switch fabrics using Mach–Zehnder interferometers and microring resonators as switch elements, and discuss their prospects toward practical implementations with active reconfiguration.For the microring-based switch fabrics, we review recent developments of active stabilization schemes at the subsystem level. Last, we outline several large challenges and problems for silicon and hybrid silicon photonics to meet for intra-datacenter applications and propose potential solutions.
文摘We investigate in this paper the influence of slow light on the balance between the Kerr and two-photon absorption(TPA) processes in silicon slotted hybrid nonlinear waveguides. Three typical silicon photonic waveguide geometries are studied to estimate the influence of the light slow-down factor on the mode field overlap with the silicon region, as well as on the complex effective nonlinear susceptibility. It is found that slotted photonic crystal modes tend to focalize in their hollow core with increasing group index(n_G) values. Considering a hybrid integration of nonlinear polymers in such slotted waveguides, a relative decrease of the TPA process by more factor of 2 is predicted from n_G=10 to n_G=50. As a whole, this work shows that the relative influence of TPA decreases for slotted waveguides operating in the slow light regime, making them a suitable platform for third-order nonlinear optics.
基金National Natural Science Foundation of China(NSFC)(11374263,61422510,61431166001,61725503)Natural Science Foundation of Zhejiang Province(Z18F050002)National Major Research and Development Program(2016YFB0402502)
文摘Nonlinear silicon photonics has shown an ability to generate, compact chip at a potential low cost. There are still barriers limitations. In this review, hybrid structures with some manipulate, and detect optical signals on an ultrahindering its development due to essential material specific materials developed for nonlinear silicon photonics are discussed. The combination of silicon and the nonlinear materials takes advantage of both materials, which shows great potential to improve the performance and expand the applications for nonlinear silicon photonics.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61271070,61274074,and 60771019)the Key Research Program of Application Foundation and Advanced Technology of Tianjin,China(Grant No.11JCZDJC15300)
文摘We report on the fabrication and performance of a room-temperature NO2 gas sensor based on a WO3 nanowires/porous silicon hybrid structure. The W18O49 nanowires are synthesized directly from a sputtered tungsten film on a porous silicon （PS） layer under heating in an argon atmosphere. After a carefully controlled annealing treatment, WO3 nanowires are obtained on the PS layer without losing the morphology. The morphology, phase structure, and crystallinity of the nanowires are investigated by using field emission scanning electron microscopy （FESEM）, X-ray diffractometer （XRD）, and high-resolution transmission electron microscopy （HRTEM）. Comparative gas sensing results indicate that the sensor based on the WO3 nanowires exhibits a much higher sensitivity than that based on the PS and pure WO3 nanowires in detecting NO2 gas at room temperature. The mechanism of the WO3 nanowires/PS hybrid structure in the NO2 sensing is explained in detail.
基金Project supported by the National Natural Science Foundation of China(Grant No.51305423)the National Basic Research Program of China(GrantNo.2011CB302104)
文摘A kind of hybrid device for acoustic noise reduction and vibration energy harvesting based on the silicon micro- perforated panel （MPP） resonant structure is investigated in the article. The critical parts of the device include MPP and energy harvesting membranes. They are all fabricated by means of silicon micro-electro-mechanical systems （MEMS） tech- nology. The silicon MPP has dense and accurate micro-holes. This noise reduction structure has the advantages of wide band and higher absorption coefficients. The vibration energy harvesting part is formed by square piezoelectric membranes arranged in rows. ZnO material is used as it has a good compatibility with the fabrication process. The MPP, piezo- electric membranes, and metal bracket are assembled into a hybrid device with multifunctions. The device exhibits good performances of acoustic noise absorption and acoustic-electric conversion. Its maximum open circuit voltage achieves 69.41 mV.
基金financially supported by the National Science Fund for Excellent Young Scholars of China (No.51522402)the National Natural Science Foundation of China (Nos. 51572019 and U1460201)the Fundamental Research Funds for the Central Universities (No. FRF-TP-15-006C1)
文摘To enhance the microwave absorption performance of silicon carbide nanowires（SiCNWs）, SiO_2 nanoshells with a thickness of approximately 2 nm and Fe_3O_4 nanoparticles were grown on the surface of SiCNWs to form SiC@SiO_2@Fe_3O_4 hybrids. The microwave absorption performance of the SiC@SiO_2@Fe_3O_4 hybrids with different thicknesses was investigated in the frequency range from 2 to 18 GHz using a free-space antenna-based system. The results indicate that SiC@SiO_2@Fe_3O_4 hybrids exhibit improved microwave absorption. In particular, in the case of an SiC@SiO_2 to iron（III） acetylacetonate mass ratio of 1：3, the microwave absorption with an absorber of 2-mm thickness exhibited a minimum reflection loss of-39.58 d B at 12.24 GHz. With respect to the enhanced microwave absorption mechanism, the Fe_3O_4 nanoparticles coated on SiC@SiO_2 nanowires are proposed to balance the permeability and permittivity of the materials, contributing to the microwave attenuation.
文摘We have developed a simple synthetic method to prepare the hybrid microspheres of CdS nanoparticles on the surface of silica microspheres modified by（3-mercaptopropyl） trimethoxysilane（MPS）. The--SH groups of MPS can bind with the Cd^2＋ ions on the surface of SiO2. When thioacetamide releases H2S, the nanosized CdS particles（ 1-6 nm） will successfully be generated on the silica surface under the experimental conditions. The size of the CdS nanoparticles was found to be related to the concentration of Cd^2 ＋ feed and the size of silica spheres, the higher the concentration of Cd^2＋ and the larger of silica microspheres, the bigger the size of CdS nanoparticles. Techniques including UV, PL, TEM and XPS were used to characterize the CdS-SiO2 hybrid microspheres.
基金supported by the National Key Technology R&D Program (Grant No. 2018YFA0209001)Frontier Science Research Project of CAS (Grant No. QYZDY-SSWJSC021)
文摘Silicon-based photonic integration has attracted the interest of semiconductor scientists because it has high luminous efficiency and electron mobility.Breakthroughs have been made in silicon-based integrated lasers over the past few decades.Here we review three main methods of integration ofⅢ–Ⅴ materials on Si,namely direct growth,bonding,and selectivearea hetero-epitaxy.TheⅢ–Ⅴmaterials we introduced mainly include materials such as GaAs and InP.The lasers are mainly lasers of related communication bands.We also introduced the advantages and challenges of the three methods.
