期刊文献+
共找到126篇文章
< 1 2 7 >
每页显示 20 50 100
Influence of pH Value on Photocatalytic Activity of Bi4Ti3O12 Crystals Obtained by Hydrothermal Method 被引量:1
1
作者 林雪 宫宇宁 +2 位作者 张耀丹 闫永胜 关庆丰 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2014年第2期209-213,I0004,共6页
Bi4Ti3O12 (BIT) crystals were controllably synthesized via a facile hydrothermal process without adding any surfactant or template. The morphologies of BIT with nanosphere, nanoplate, nanobelt, and nanosheet can be ... Bi4Ti3O12 (BIT) crystals were controllably synthesized via a facile hydrothermal process without adding any surfactant or template. The morphologies of BIT with nanosphere, nanoplate, nanobelt, and nanosheet can be selectively obtained by adjusting the pH value of the reactant. The formation mechanisms of these distinctive morphologies were then discussed based on the structural analysis of samples obtained at different pH values. BIT sample prepared at pH=1 showed the highest photocatalytic activity under visible light irradiation. The photocatalytic activities difference for the BIT samples synthesized at different pH values was studied based on their shape, size, and the variation of local structure. 展开更多
关键词 PHOTOCATALYSIS bi4ti3o12 pH value Local structure
下载PDF
Sr和Nb复合掺杂Bi4Ti3O12基高温压电陶瓷的研究 被引量:10
2
作者 杨庆 江向平 +3 位作者 余祖灯 涂娜 陈超 陈燕 《人工晶体学报》 EI CAS CSCD 北大核心 2011年第6期1471-1477,共7页
采用传统固相法制备了Bi4Ti3O12+0.91wt%Nb2O5+xwt%SrCO3(BTNO-Sr,0.00≤x≤1.50)层状压电陶瓷,研究了Sr掺杂对BTNO系陶瓷微观结构与电性能的影响。结果表明所有样品均为单一的铋层状结构相陶瓷。适量引入Sr能使BTNO系陶瓷的晶粒尺寸细... 采用传统固相法制备了Bi4Ti3O12+0.91wt%Nb2O5+xwt%SrCO3(BTNO-Sr,0.00≤x≤1.50)层状压电陶瓷,研究了Sr掺杂对BTNO系陶瓷微观结构与电性能的影响。结果表明所有样品均为单一的铋层状结构相陶瓷。适量引入Sr能使BTNO系陶瓷的晶粒尺寸细化与均一,表现出介电弥散性,并改善其压电﹑机电和铁电性能。当x=0.50时,样品性能最佳:相对密度ρ=98.8%,压电常数d33=22 pC/N,平面机电耦合系数kp=9.5%,机械品质因子Qm=4462,剩余极化强度Pr=13.01μC/cm2,居里温度Tc=620℃。此外,介电性能和热稳定性能研究显示材料x=0.50具有好的压电稳定性,适合于制备高温高频压电器件。 展开更多
关键词 压电陶瓷 微观结构 机电性能 bi4ti3o12
下载PDF
球形Bi4Ti3O12制备及其可见光催化性能 被引量:7
3
作者 高晓明 代源 +2 位作者 张裕 王子航 付峰 《无机化学学报》 SCIE CAS CSCD 北大核心 2017年第3期455-462,共8页
采用水热法合成球形钛酸铋复合氧化物光催化剂,利用SEM、XRD和UV-Vis DRS等表征手段对复合氧化物的晶体结构、微观形貌和光学性能进行了分析,结果表明,制备的钛酸铋复合氧化物为10 nm的球形颗粒,具有良好的晶型结构,禁带宽度为2.7 nm,... 采用水热法合成球形钛酸铋复合氧化物光催化剂,利用SEM、XRD和UV-Vis DRS等表征手段对复合氧化物的晶体结构、微观形貌和光学性能进行了分析,结果表明,制备的钛酸铋复合氧化物为10 nm的球形颗粒,具有良好的晶型结构,禁带宽度为2.7 nm,有较好的可见光吸收能力。以亚甲基蓝、甲基橙及酸性品红为目标污染物,研究了复合氧化物在可见光下的光催化降解有机污染物的性能,并对光催化降解机理进行了探讨。结果表明,在可见光照射下,该复合氧化物对酸性品红降解效果明显优于亚甲基蓝和甲基橙,光照150 min下,降解率可达91%。 展开更多
关键词 bi4ti3o12 光催化 可见光 酸性品红
下载PDF
BiFeO3/Bi4Ti3O12多层铁电薄膜的性能研究 被引量:1
4
作者 王秀章 晏伯武 刘红日 《电子元件与材料》 CAS CSCD 北大核心 2008年第12期63-65,共3页
采用sol-gel法在FTO/玻璃底电极上制备了BiFeO3/Bi4Ti3O12多层薄膜。研究了室温下薄膜的结构,铁电和漏电流性质。结果表明,相对于纯的BiFeO3薄膜,BiFeO3/Bi4Ti3O12多层薄膜具有更低的漏电流,表现出较强的铁电性,在4.40×105V/cm的... 采用sol-gel法在FTO/玻璃底电极上制备了BiFeO3/Bi4Ti3O12多层薄膜。研究了室温下薄膜的结构,铁电和漏电流性质。结果表明,相对于纯的BiFeO3薄膜,BiFeO3/Bi4Ti3O12多层薄膜具有更低的漏电流,表现出较强的铁电性,在4.40×105V/cm的测试电场强度下,剩余极化强度为3.7×10–5C/cm2。在2.00×105V/cm的测试电场强度下,BiFeO3和BiFeO3/Bi4Ti3O12薄膜的漏电流密度分别为10–5和10–7A/cm2。 展开更多
关键词 无机非金属材料 铁磁电材料 BIFEO3薄膜 bi4ti3o12多层薄膜 铁电性
下载PDF
Ag/Bi3.25La0.75Ti3O12/Bi4Ti3O12/Si结构铁电薄膜制备及其铁电性能的研究
5
作者 郭冬云 王耘波 +4 位作者 于军 付承菊 高俊雄 李建军 陈万军 《功能材料》 EI CAS CSCD 北大核心 2004年第z1期1442-1444,共3页
利用溶胶-凝胶(sol-gel)方法,在硅基底上制备了Bi3.25La0.75Ti3O12/Bi4Ti3O12/Si铁电薄膜,其中Bi4Ti3O12作为缓冲层.用XRD方法分析了该结构铁电薄膜的物相结构;用扫描电镜对薄膜样品进行表面形貌观察;并且对该结构的铁电性能进行了研究.
关键词 铁电薄膜 Bi3.25La0.75ti3o12 bi4ti3o12:sol-gel法
下载PDF
硅衬底Bi4Ti3O12和Bi3.25La0.75Ti3O12铁电薄膜的慢正电子束研究
6
作者 王耘波 高俊雄 +2 位作者 郭冬云 于军 魏龙 《功能材料》 EI CAS CSCD 北大核心 2010年第11期1876-1878,1882,共4页
对硅衬底生长的Bi4Ti3O12和Bi3.25La0.75Ti3O12薄膜样品测量了慢正电子多普勒展宽谱,得到了S参数随正电子注入能量的变化。通过对S参数和W参数的分析,讨论了这类材料中的捕获态特征和结构特点,结果表明,薄膜与硅衬底界面的缺陷为空位-... 对硅衬底生长的Bi4Ti3O12和Bi3.25La0.75Ti3O12薄膜样品测量了慢正电子多普勒展宽谱,得到了S参数随正电子注入能量的变化。通过对S参数和W参数的分析,讨论了这类材料中的捕获态特征和结构特点,结果表明,薄膜与硅衬底界面的缺陷为空位-氧复合体,La的掺杂有助于阻止空位-氧复合体向界面的扩散。 展开更多
关键词 慢正电子束 多普勒展宽谱 bi4ti3o12铁电薄膜 缺陷
下载PDF
Bi4Ti3O12铁电薄膜I-V特性的研究
7
作者 王华 李岩 《功能材料》 EI CAS CSCD 北大核心 2004年第z1期1418-1421,共4页
采用溶胶-凝胶工艺(Sol-Gel)在Pt/Ti/SiO2/p-Si衬底上成功制备了低漏电流Bi4Ti3O12(BIT)铁电薄膜,对所得样品的漏导行为进行了研究.研究表明,Bi4Ti3O12薄膜的漏电流密度在+3V偏压下低于10-9A/cm2,满足器件应用的要求.在不同场强下薄膜... 采用溶胶-凝胶工艺(Sol-Gel)在Pt/Ti/SiO2/p-Si衬底上成功制备了低漏电流Bi4Ti3O12(BIT)铁电薄膜,对所得样品的漏导行为进行了研究.研究表明,Bi4Ti3O12薄膜的漏电流密度在+3V偏压下低于10-9A/cm2,满足器件应用的要求.在不同场强下薄膜的漏导机制不同,而且正向和负向电场作用下I-V曲线明显不同,正向漏电流明显小于负向漏电流.电压低于2V时,薄膜以欧姆导电机制为主,电压在2~5.4V(加正向电压)或2.2~3.6V(加负向电压)时,BIT薄膜应以Schottky emission导电机制为主;而对于较高的场强下,BIT薄膜以Space-charge limited currents(SCLC)导电机制为主. 展开更多
关键词 铁电薄膜 bi4ti3o12 漏导机制 I-V特性
下载PDF
Bi4Ti3O12/g-C3N4复合光催化剂的制备及其光催化性能研究 被引量:3
8
作者 张根 黄自力 +2 位作者 葛胜涛 田亮 张海军 《现代化工》 CAS CSCD 北大核心 2020年第8期83-87,92,共6页
采用机械混合/热处理的方法制备了具有异质结结构的Bi4Ti3O12/g-C3N4复合光催化剂,利用XRD、SEM及UVVis对所制备的复合光催化剂的结构与形貌进行了表征。结果表明,复合光催化剂中形成了异质结构,其禁带宽度减小,吸收带边红移,可见光吸... 采用机械混合/热处理的方法制备了具有异质结结构的Bi4Ti3O12/g-C3N4复合光催化剂,利用XRD、SEM及UVVis对所制备的复合光催化剂的结构与形貌进行了表征。结果表明,复合光催化剂中形成了异质结构,其禁带宽度减小,吸收带边红移,可见光吸收增加。以Rh B为目标污染物评价复合光催化剂的活性,考察了不同g-C3N4复合量对光催化剂反应活性的影响。结果表明,异质结型复合光催化剂的光催化活性明显优于单相Bi4Ti3O12;当g-C3N4的质量分数为20%时,其光催化性能最佳(90 min达92.8%),其表观反应常数为单相Bi4Ti3O12的4倍。复合光催化剂光催化活性提高的原因是Bi4Ti3O12与g-C3N4之间形成了异质结,显著降低了光生电子和空穴的复合几率。外加捕获剂的实验结果表明,复合光催化剂的主要活性基团为空穴(h+)与超氧自由基(·O2-)。 展开更多
关键词 bi4ti3o12 g-C3N4 异质结 光催化
下载PDF
Nb掺杂对Bi4Ti3O12陶瓷铁电性能的影响 被引量:2
9
作者 黄小丹 冯湘 +2 位作者 王华 许积文 杨玲 《电子元件与材料》 CAS CSCD 北大核心 2009年第4期11-13,共3页
采用固相反应法制备了Bi4Ti3-xNbxO12+x/2(x=0~0.090,BTN)铁电陶瓷,研究了Nb掺杂量对BTN陶瓷铁电性能的影响。结果表明,适量的Nb掺杂可显著提高材料的剩余极化强度Pr,一定程度上降低矫顽场强Ec,并减小BTN陶瓷的平均晶粒尺寸(1~2μm)。... 采用固相反应法制备了Bi4Ti3-xNbxO12+x/2(x=0~0.090,BTN)铁电陶瓷,研究了Nb掺杂量对BTN陶瓷铁电性能的影响。结果表明,适量的Nb掺杂可显著提高材料的剩余极化强度Pr,一定程度上降低矫顽场强Ec,并减小BTN陶瓷的平均晶粒尺寸(1~2μm)。当x=0.045时,陶瓷的综合性能较好,即有较高的2Pr(0.27×10–4C/cm2)和较小的2Ec(7.43×104V/cm),其剩余极化强度与未掺Nb的Bi4Ti3O12陶瓷相比,提高了近3.8倍。 展开更多
关键词 无机非金属材料 铁电陶瓷 bi4ti3o12 剩余极化强度 矫顽场强
下载PDF
分子动力学方法模拟压强对Bi4Ti3O12铁电相变行为的影响
10
作者 孙玲玲 马颖 周益春 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2011年第5期491-494,共4页
在壳模型的基础上,通过分子动力学方法模拟了压强对Bi4Ti3O12(BIT)铁电相变行为的影响.为了提高模拟的准确性,在原有势参数的基础上增加了Ti-Ti短程相互作用势.计算得出了温度为300K时BIT单晶的铁电正交B2cb相在x方向和z方向的自发极化... 在壳模型的基础上,通过分子动力学方法模拟了压强对Bi4Ti3O12(BIT)铁电相变行为的影响.为了提高模拟的准确性,在原有势参数的基础上增加了Ti-Ti短程相互作用势.计算得出了温度为300K时BIT单晶的铁电正交B2cb相在x方向和z方向的自发极化强度分别为39.4μC/cm2和0,与实验结果较好的吻合.然后模拟了压强对BIT相变行为的影响.模拟结果表明:BIT单晶在压强从-2 GPa到24 GPa范围内,经历了两次结构相变,分别发生在6 GPa和20 GPa处.这种对称性的改变类似于在环境压力条件下温度导致BIT单晶对称性的改变.因而模拟结果为研究压强引起BIT的相变行为提供了理论依据. 展开更多
关键词 分子动力学 bi4ti3o12 压强 相变
下载PDF
(1-x)Bi4Ti3O12-xSrBi2Nb2O9铋层状铁电陶瓷结构与性能研究 被引量:4
11
作者 涂娜 江向平 +2 位作者 李小红 傅小龙 杨帆 《人工晶体学报》 EI CAS CSCD 北大核心 2013年第9期1831-1836,共6页
采用传统固相法制备了(1-x)Bi4Ti3O12-xSrBi2Nb2O9(BIT-SBN,x=0,0.025,0.050,0.100,0.150,0.200)铋层状无铅压电陶瓷。系统研究了SrBi2Nb2O9掺杂对Bi4Ti3O12基陶瓷物相结构、微观结构以及jie电性能的影响。结果表明:所有陶瓷样品均为单... 采用传统固相法制备了(1-x)Bi4Ti3O12-xSrBi2Nb2O9(BIT-SBN,x=0,0.025,0.050,0.100,0.150,0.200)铋层状无铅压电陶瓷。系统研究了SrBi2Nb2O9掺杂对Bi4Ti3O12基陶瓷物相结构、微观结构以及jie电性能的影响。结果表明:所有陶瓷样品均为单一的铋层状结构;当SBN掺量为0.100时,样品具有最佳的电性能:d33=21 pC/N,相对密度ρ=98.1%,机电耦合系数k p=8.26%,εr=220,介电损耗tanδ=0.29%,剩余极化强度P r=9.128μC/cm2,T c=594℃。同时,SBN的引入增强了样品的抗老化性和热稳定性。 展开更多
关键词 bi4ti3o12 SrBi2Nb2O9 铋层状 铁电陶瓷 介电性能
下载PDF
烧结温度对Er掺杂Bi4Ti3O12陶瓷发光性能的影响 被引量:2
12
作者 万萍 余峰 +2 位作者 骆雯琴 孙丽 何勇涛 《陶瓷学报》 CAS 北大核心 2019年第6期805-809,共5页
近些年,稀土掺杂铋层状结构铁电体(BLSFs)的上转换发光引起了学术界广泛关注,特别是,以单晶、晶粒取向/织构陶瓷和玻璃陶瓷形式存在的可用性Bi4Ti3O12促进了对上转换(UC)发光的研究。采用固相法制备了Bi4-0.05Er0.05Ti3O12铋层状压电陶... 近些年,稀土掺杂铋层状结构铁电体(BLSFs)的上转换发光引起了学术界广泛关注,特别是,以单晶、晶粒取向/织构陶瓷和玻璃陶瓷形式存在的可用性Bi4Ti3O12促进了对上转换(UC)发光的研究。采用固相法制备了Bi4-0.05Er0.05Ti3O12铋层状压电陶瓷,利用XRD粉末衍射,SEM扫描电镜和F-4500FL光度计研究了烧结温度对陶瓷样品的上转换发光性能的影响。研究发现,烧结温度分别为950℃,1000℃,1050℃,1100℃和1150℃的陶瓷样品均为单一的正交相。在一定烧结温度范围内,随着烧结温度升高,晶粒尺寸变大,层状特征越明显,气孔度显著降低,UC发光强度增强,而当烧结温度高于1150℃时,UC发光强度急剧下降,与高温加剧Bi3+的挥发有关。 展开更多
关键词 烧结温度 上转换 bi4ti3o12
下载PDF
气压对射频磁控溅射Bi4Ti3O12薄膜的影响
13
作者 黄攀 彭健 王传彬 《中国材料科技与设备》 2011年第5期36-38,共3页
在不同溅射气压下,采用射频磁控溅射技术在Pt/Ti/SiO2/Si衬底上制备了钛酸铋(Bi4Ti3O12)薄膜。在较低的气压(0.45-0.8Pa)下,得到了单相的Bi4Ti3O12薄膜;在较高气压(1.0-1.8Pa)下,薄膜中出现Bi2Ti2O7焦绿石相;随着气压的增加... 在不同溅射气压下,采用射频磁控溅射技术在Pt/Ti/SiO2/Si衬底上制备了钛酸铋(Bi4Ti3O12)薄膜。在较低的气压(0.45-0.8Pa)下,得到了单相的Bi4Ti3O12薄膜;在较高气压(1.0-1.8Pa)下,薄膜中出现Bi2Ti2O7焦绿石相;随着气压的增加,薄膜的沉积速率和晶粒尺寸先增大后减小,表面粗糙度也逐渐增加;在适宜的气压(0.6Pa)下,得到的Bi4Ti3O12薄膜物相单一、表面平整致密、结晶良好。 展开更多
关键词 bi4ti3o12薄膜 射频磁控溅射 溅射气压
下载PDF
Design of Lead-Free Films with High Energy Storage Performance via Inserting a Single Perovskite into Bi4Ti3O12 被引量:1
14
作者 Qiong Wu Xin Wu +1 位作者 Yue-Shun Zhao Shifeng Zhao 《Chinese Physics Letters》 SCIE CAS CSCD 2020年第11期104-109,共6页
We report a distinctive way for designing lead-free films with high energy storage performance.By inserting different single perovskite cells into Bi4 Ti3 O12,P-E hysteresis loops present larger maximum polarization,h... We report a distinctive way for designing lead-free films with high energy storage performance.By inserting different single perovskite cells into Bi4 Ti3 O12,P-E hysteresis loops present larger maximum polarization,higher breakdown strength and smaller slim-shaped area.We prepared 0.15 Bi7 Fe3 Ti3 O21-0.5 Bi4 Sr3 Ti6 O21-0.35 Bi4 Ba3 Ti6 O21 solid solution ferroelectric films employing the sol-gel method,and obtained high energy storage density of 132.5 J/cm3 and efficiency of 78.6%while maintaining large maximum polarization of 112.3μC/cm2 and a high breakdown electric field of 3700 kV/cm.Moreover,the energy storage density and efficiency exhibit stability over the temperature range from 20℃to 125℃,and anti-fatigue stability maintains up to 108 cycles.The films with a simple preparation method and high energy storage performance are likely to become candidates for high-performance energy storage materials. 展开更多
关键词 bi4ti3o12 BREAKDOWN POLARIZATION
下载PDF
Enhanced Ferroelectric Polarization in Laser-ablated Bi4Ti3O12 Thin Films by Controlling Preferred Orientation
15
作者 王传彬 LUO Sijun +2 位作者 SHEN Qiang HU Mingzhe ZHANG Lianmeng 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2018年第2期268-272,共5页
Polycrystalline Bi_4Ti_3O_(12) thin films with various fractions of a-axis, c-axis and random orientations have been grown on Pt(111)/Ti/Si O_2/Si substrates by laser-ablation under different kinetic growth condit... Polycrystalline Bi_4Ti_3O_(12) thin films with various fractions of a-axis, c-axis and random orientations have been grown on Pt(111)/Ti/Si O_2/Si substrates by laser-ablation under different kinetic growth conditions. The relationship between the structure and ferroelectric property of the films was investigated, so as to explore the possibility of enhancing ferroelectric polarization by controlling the preferred orientation. The structural characterization indicated that the large growth rate and high oxygen background pressure were both favorable for the growth of non-c-axis oriented grains in the Bi_4Ti_3O_(12) thin films. The films with high fractions of a-axis and random orientations, i e, f(a-sxis) = 28.3% and f(random) = 69.6%, could be obtained at the deposition temperature of 973 K, oxygen partial pressure of 15 Pa and laser fluence of 4.6 J/cm^2, respectively. It was also noted that the variation of ferroelectric polarization was in accordance with the evolution non-c-axis orientation. A large value of remanent polarization(2 Pr = 35.5 μC/cm^2) was obtained for the Bi_4Ti_3O_(12) thin films with significant non-c-axis orientation, even higher than that of rare-earth-doped Bi_4Ti_3O_(12) films. 展开更多
关键词 bi4ti3o12 thin film preferred orientation ferroelectric polarization laser-ablation
下载PDF
W^6+改性对Bi4Ti3O(12)高温压电陶瓷电性能影响研究 被引量:2
16
作者 张智鹏 沈宗洋 +4 位作者 秦晨 宋福生 骆雯琴 王竹梅 李月明 《陶瓷学报》 CAS 北大核心 2020年第1期29-34,共6页
采用传统固相法制备WO3掺杂Bi4Ti3O(12)(Bi4Ti(3-x)WxO(12),BITW,0.00≤x≤0.16)层状高温压电陶瓷,研究了W^6+掺杂对Bi4Ti3O(12)(BIT)陶瓷晶体微观结构与电性能的影响。研究表明适量的W^6+掺杂能使BIT陶瓷的晶粒尺寸细化且均匀,有效地... 采用传统固相法制备WO3掺杂Bi4Ti3O(12)(Bi4Ti(3-x)WxO(12),BITW,0.00≤x≤0.16)层状高温压电陶瓷,研究了W^6+掺杂对Bi4Ti3O(12)(BIT)陶瓷晶体微观结构与电性能的影响。研究表明适量的W^6+掺杂能使BIT陶瓷的晶粒尺寸细化且均匀,有效地提高了陶瓷的致密度,且WO3的引入降低了BIT陶瓷的电导率和介电损耗,提高了其压电与机电性能。当WO3掺杂量x=0.14时,陶瓷具有如下优异性能:压电常数d(33)=16 p C/N,平面机电耦合系数kp=8.1%,机械品质因数Qm=1942,介电常数εr=160(@100 k Hz),介电损耗tanδ=0.16%(@100 k Hz),居里温度Tc=632℃,在500℃下,电阻率ρ=9.4×10^7Ω·cm,表明BITW陶瓷在高温应用方面具有很大的前景。 展开更多
关键词 铋层状陶瓷 压电性能 介电性能 热稳定性 bi4ti3o12
下载PDF
Effect of Synthesis Process on CuO Segregation and Dielectric Properties of CaCu3Ti4O12 Ceramic
17
作者 CHEN Yuan TENG Yuancheng 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2019年第5期1089-1096,共8页
The CaCu3Ti4O12(CCTO) ceramic was prepared through conventional solid-state method. The effects of synthesis process(synthesis temperature and synthesis time) of powder on ceramic microstructures, CuO segregation and ... The CaCu3Ti4O12(CCTO) ceramic was prepared through conventional solid-state method. The effects of synthesis process(synthesis temperature and synthesis time) of powder on ceramic microstructures, CuO segregation and electrical properties were investigated. The phase composition was determined by X-ray diffraction and the microstructure was examined by SEM. The dielectric constant, dielectric loss, and resistance of the ceramic were also determined by a precision impedance tester. The results show that, as the synthesis temperature increases, the CCTO ceramic grain size decreases and the stoichiometric ratio of Cu/Ca at the grain boundary increases, the dielectric constant increases and the dielectric loss decreases(40 < f < 10 kHz). In addition, when the synthesis time is shorter than 12 h, the Cu/Ca ratio of CCTO decreases and the dielectric constant increases with time increase. However, when the synthesis time exceeds 12 h, this trend is just the opposite. It is further proved that Cu at the grain boundary is not conducive to the dielectric constant of CCTO. 展开更多
关键词 CACU3TI4o12 synthesis temperature synthesis time microstructure DIELECTRIC properties
下载PDF
Composite CoFe2O4/Bi3.1La0.9Ti3O12 Structures with Multiferroic Properties
18
作者 Amanda Charris-Hemandez Arun Kumar Maharaj Tomar 《Journal of Chemistry and Chemical Engineering》 2014年第8期767-771,共5页
Chemical solution route was used to synthesize Bi3.1La0.9Ti3O12 and CoFe2O4. Alternate CoFe2O4/Bi3.1La0.9Ti3O12 layers were deposited on Pt substrate (Pt/TiO2/SiO2/Si) by spin coating. X-ray diffraction and SEM (sc... Chemical solution route was used to synthesize Bi3.1La0.9Ti3O12 and CoFe2O4. Alternate CoFe2O4/Bi3.1La0.9Ti3O12 layers were deposited on Pt substrate (Pt/TiO2/SiO2/Si) by spin coating. X-ray diffraction and SEM (scanning electron microscopy) studies show composite-like polycrystalline films. Films were studied for leakage current, dielectric response, ferroelectric and ferromagnetic properties. Leakage current was low (〈 10^-8 A) in electric field below 120 kV/cm, and the dielectric response shows relaxation. Dielectric loss (tan 8) reduces 〈 3% at 10^6 Hz. Two and four layer structures showed room temperature FE (ferroelectric) and FM (ferromagnetic) responses with FE Pr (polarization) 〉 25℃/cm2 and ferromagnetic Mr (memory) 〉 52 emu/cm3. Co-existence of FE and FM can be attributed to stress due to different crystal structures of the material involved in composite film structure. 展开更多
关键词 MULTIFERROIC CoFe2O4/Bi3.1La0.9ti3o12 composite chemical route.
下载PDF
Facile ultrasonic-assisted synthesis of micro–nanosheet structure Bi_4Ti_3O_(12)/g-C_3N_4 composites with enhanced photocatalytic activity on organic pollutants 被引量:2
19
作者 Huihui Gan Futao Yi +3 位作者 Huining Zhang Yongxing Qian Huixia Jin Kefeng Zhang 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2018年第12期2628-2635,共8页
The Bi_4Ti_3O_(12)/g-C_3N_4 composites with microsheet and nanosheet structure were prepared through facile ultrasonic-assisted method. The SEM and TEM results suggested that the nanosheets g-C_3N_4 were stacked on th... The Bi_4Ti_3O_(12)/g-C_3N_4 composites with microsheet and nanosheet structure were prepared through facile ultrasonic-assisted method. The SEM and TEM results suggested that the nanosheets g-C_3N_4 were stacked on the surface of regular Bi_4Ti_3O_(12) sheets. Comparing with pure Bi_4Ti_3O_(12) and g-C_3N_4, the Bi_4Ti_3O_(12)/g-C_3N_4 composites showed significant enhancement in photocatalytic efficiency for the degradation of RhB in solution. With the mass ratio of g-C_3N_4 increasing to 10 wt%, the Bi_4Ti_3O_(12)/g-C_3N_4-10% presented the best photocatalytic activity. Its photocatalysis reaction constant was approximately 2 times higher than the single component Bi_4Ti_3O_(12) or g-C_3N_4. Meanwhile, good stability and durability for the Bi_4Ti_3O_(12)/g-C_3N_4-10% were confirmed by the recycling experiment and FT-IR analysis. The possible mechanism for the improvements was the matched band positions and the effective separation of photo-excited electrons(e-) and holes(h+). Furthermore, based on the results of active species trapping, photo-generated holes(h+) and superoxide radical(·O2-) could be the main radicals in reaction. 展开更多
关键词 RHODAMINE B Photocatalyst Ultrasonic assisted synthesis bi4ti3o12 g-C3N4
下载PDF
Nb掺杂Bi_4Ti_3O_(12)层状结构铁电陶瓷的电行为特性研究 被引量:30
20
作者 张丽娜 李国荣 +2 位作者 赵苏串 郑嘹赢 殷庆瑞 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2005年第6期1389-1395,共7页
采用固相烧结工艺制备了Nb5+掺杂的Bi4Ti3O12层状结构铁电陶瓷.运用XRD 和AFM对Bi4Ti3-xNbxO12+x/2材料的微观结构进行表征,发现所制备的陶瓷均具有单一的正交相结构,抛光热腐蚀表面晶粒的显微形貌表现为随机排列的棒状结构.通过对材料... 采用固相烧结工艺制备了Nb5+掺杂的Bi4Ti3O12层状结构铁电陶瓷.运用XRD 和AFM对Bi4Ti3-xNbxO12+x/2材料的微观结构进行表征,发现所制备的陶瓷均具有单一的正交相结构,抛光热腐蚀表面晶粒的显微形貌表现为随机排列的棒状结构.通过对材料直流电导率与温度关系的Arrhenius拟合,分析丁Bi4Ti3-xNbxO12+x/2的导电机理. Nb5+掺杂提高了材料的介电常数,但居里温度随掺杂含量的增加呈线性下降趋势.DSC结果显示Bi4Ti3-xNbxO12+x/2材料在居里温度处经历了一级铁电相变.样品的铁电性能测试结果表明, Nb5+掺杂Bi4Ti3O12提高了材料的剩余极化Pr,这主要是由于Nb5+取代Ti4+大大降低了材料中氧空位的浓度,使得氧空位对畴的钉扎作用减弱的缘故. 展开更多
关键词 电导率 活化能 铁电性能 bi4ti3o12
下载PDF
上一页 1 2 7 下一页 到第
使用帮助 返回顶部