In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （A...In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.展开更多
In an injection moulding process, the parallelism b et ween the tie bars of the injection moulding machine is very important as it will affect the mould closing and clamping system. In recent years, more and more ho t...In an injection moulding process, the parallelism b et ween the tie bars of the injection moulding machine is very important as it will affect the mould closing and clamping system. In recent years, more and more ho t runner systems are being applied in the moulding industry to save material and decrease the losses of injection pressure. Heat transfer from hot runner system from the fixed half which is secured in the fix machine platen could transmit s o much heat that it may cause high temperature differential between the machine fix platen and moving platen. This will cause the tie bar to become unparallel. Part quality will be compromised and the wear of the tie bar will be excessive. Overhaul of the tie bar may be necessary after a short period of time which is c ostly. This raises the need to analyze the heat transfer from the hot runner sys tem to the machine fix platen and the methods of isolating or minimizing the hea t transfer. In this case study, a photo lens article mould was used. The mould w as built with a direct hot runner nozzle system. Heat conduction from hot runner and machine screw to machine fix platen were studied based on either using high temperature heat insulating plate put in placed between the mould and the mould ing machine fix platen or drill cooling channels in the front mould clamping pla te. The high temperature insulator is very costly as it is made out of glass re inforced polymer composite material. Experimental results were obtained and anal yzed to find the best method to minimize the unwanted heat transfer using the ch eapest and most effective method.展开更多
文摘In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.
文摘In an injection moulding process, the parallelism b et ween the tie bars of the injection moulding machine is very important as it will affect the mould closing and clamping system. In recent years, more and more ho t runner systems are being applied in the moulding industry to save material and decrease the losses of injection pressure. Heat transfer from hot runner system from the fixed half which is secured in the fix machine platen could transmit s o much heat that it may cause high temperature differential between the machine fix platen and moving platen. This will cause the tie bar to become unparallel. Part quality will be compromised and the wear of the tie bar will be excessive. Overhaul of the tie bar may be necessary after a short period of time which is c ostly. This raises the need to analyze the heat transfer from the hot runner sys tem to the machine fix platen and the methods of isolating or minimizing the hea t transfer. In this case study, a photo lens article mould was used. The mould w as built with a direct hot runner nozzle system. Heat conduction from hot runner and machine screw to machine fix platen were studied based on either using high temperature heat insulating plate put in placed between the mould and the mould ing machine fix platen or drill cooling channels in the front mould clamping pla te. The high temperature insulator is very costly as it is made out of glass re inforced polymer composite material. Experimental results were obtained and anal yzed to find the best method to minimize the unwanted heat transfer using the ch eapest and most effective method.
