Present studies in physics assume that elementary particles are the building blocks of all matter, and that they are zero-dimensional objects which do not occupy space. The new I-Theory predicts that elementary partic...Present studies in physics assume that elementary particles are the building blocks of all matter, and that they are zero-dimensional objects which do not occupy space. The new I-Theory predicts that elementary particles do indeed have a substructure, three dimensions, and occupy space, being composed of fundamental particles called I-particles. In this article we identify the substructural pattern of elementary particles and define the quanta of energy that form each elementary particle. We demonstrate that the substructure comprises two classes of quanta which we call “attraction quanta” and “repulsion quanta”. We create a model that defines the rest-mass energy of each elementary particle and can predict new particles. Lastly, in order to incorporate this knowledge into the contemporary models of science, a revised periodic table is proposed.展开更多
在供给侧改革视域下,南京医科大学聚焦新时期“懂医精药”本科药学人才培养的要求,基于以学生为主体(I)这个中心,从科研促进教学(Scientific Research Promoting Teaching)、以患者为中心(Patient-centered Humanistic Quality Cultivat...在供给侧改革视域下,南京医科大学聚焦新时期“懂医精药”本科药学人才培养的要求,基于以学生为主体(I)这个中心,从科研促进教学(Scientific Research Promoting Teaching)、以患者为中心(Patient-centered Humanistic Quality Cultivation)、产教协同育人(Assurance System of Cooperation Education)、创新实训实践(Research and Training Bases)、药苑育人生态(Keen Sense of Patriotism and Responsibility)五方面探索并实践医学院校“I-SPARK”本科药学人才培养体系改革,取得了较好的实践效果。展开更多
GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three terminal structures, i...GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three terminal structures, including deeply etched, bevel, and stepped-mesas terminal structures, to suppress electric field crowding effects at the device and junction edges. Deeply-etched mesa terminal yields a breakdown voltage of 1205 V, i.e., 89% of the ideal voltage. The bevel-mesa terminal achieves about 89% of the ideal breakdown voltage, while the step-mesa terminal is less effective in mitigating electric field crowding, at about 32% of the ideal voltage. This work can provide an important reference for the design of high-power, high-voltage GaN-based P-i-N power devices, finding a terminal protection structure suitable for GaNPiN diodes to further enhance the breakdown performance of the device and to unleash the full potential of GaN semiconductor materials.展开更多
文摘Present studies in physics assume that elementary particles are the building blocks of all matter, and that they are zero-dimensional objects which do not occupy space. The new I-Theory predicts that elementary particles do indeed have a substructure, three dimensions, and occupy space, being composed of fundamental particles called I-particles. In this article we identify the substructural pattern of elementary particles and define the quanta of energy that form each elementary particle. We demonstrate that the substructure comprises two classes of quanta which we call “attraction quanta” and “repulsion quanta”. We create a model that defines the rest-mass energy of each elementary particle and can predict new particles. Lastly, in order to incorporate this knowledge into the contemporary models of science, a revised periodic table is proposed.
文摘在供给侧改革视域下,南京医科大学聚焦新时期“懂医精药”本科药学人才培养的要求,基于以学生为主体(I)这个中心,从科研促进教学(Scientific Research Promoting Teaching)、以患者为中心(Patient-centered Humanistic Quality Cultivation)、产教协同育人(Assurance System of Cooperation Education)、创新实训实践(Research and Training Bases)、药苑育人生态(Keen Sense of Patriotism and Responsibility)五方面探索并实践医学院校“I-SPARK”本科药学人才培养体系改革,取得了较好的实践效果。
文摘GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three terminal structures, including deeply etched, bevel, and stepped-mesas terminal structures, to suppress electric field crowding effects at the device and junction edges. Deeply-etched mesa terminal yields a breakdown voltage of 1205 V, i.e., 89% of the ideal voltage. The bevel-mesa terminal achieves about 89% of the ideal breakdown voltage, while the step-mesa terminal is less effective in mitigating electric field crowding, at about 32% of the ideal voltage. This work can provide an important reference for the design of high-power, high-voltage GaN-based P-i-N power devices, finding a terminal protection structure suitable for GaNPiN diodes to further enhance the breakdown performance of the device and to unleash the full potential of GaN semiconductor materials.
