基于光束感生电阻变化(OBIRCH)的热激光激发定位技术广泛应用于半导体器件的失效分析,特别是大规模集成电路的短路失效定位。详细介绍了OBIRCH技术在芯片背面失效定位时的原理和方法,通过精密研磨、抛光等先进制样手段对失效样品进行开...基于光束感生电阻变化(OBIRCH)的热激光激发定位技术广泛应用于半导体器件的失效分析,特别是大规模集成电路的短路失效定位。详细介绍了OBIRCH技术在芯片背面失效定位时的原理和方法,通过精密研磨、抛光等先进制样手段对失效样品进行开封、芯片背面减薄。采用OBIRCH方法从芯片背面进行激光成像,成功对0.18μm工艺6层金属化布线的集成电路gg NMOS结构保护网络二次击穿和PMOS电容栅氧化层损伤进行了失效定位,并对背面定位图像和正面定位图像、In Ga As CCD成像进行了对比分析。结果表明,In Ga As CCD成像模糊并无法定位,OBIRCH背面定位成像比正面成像清楚,可以精确定位并观察到缺陷点。因此,OBIRCH技术用于集成电路短路的背面失效定位是准确的,可解决多层结构的正面定位难题。展开更多
Design aspects of CMOS compatible on-chip antenna for applications of contact-less smart card are discussed.An on-chip antenna model is established and a design method is demonstrated.Experimental results show that sy...Design aspects of CMOS compatible on-chip antenna for applications of contact-less smart card are discussed.An on-chip antenna model is established and a design method is demonstrated.Experimental results show that system-on-chip integrating power reception together with other electronic functions of smart card applications is feasible.In a 6×10 -4T magnetic field of 22.5MHz,an on-chip power of 1.225mW for a 10kΩ load is obtained using a 4mm2 on-chip antenna.展开更多
文摘基于光束感生电阻变化(OBIRCH)的热激光激发定位技术广泛应用于半导体器件的失效分析,特别是大规模集成电路的短路失效定位。详细介绍了OBIRCH技术在芯片背面失效定位时的原理和方法,通过精密研磨、抛光等先进制样手段对失效样品进行开封、芯片背面减薄。采用OBIRCH方法从芯片背面进行激光成像,成功对0.18μm工艺6层金属化布线的集成电路gg NMOS结构保护网络二次击穿和PMOS电容栅氧化层损伤进行了失效定位,并对背面定位图像和正面定位图像、In Ga As CCD成像进行了对比分析。结果表明,In Ga As CCD成像模糊并无法定位,OBIRCH背面定位成像比正面成像清楚,可以精确定位并观察到缺陷点。因此,OBIRCH技术用于集成电路短路的背面失效定位是准确的,可解决多层结构的正面定位难题。
文摘Design aspects of CMOS compatible on-chip antenna for applications of contact-less smart card are discussed.An on-chip antenna model is established and a design method is demonstrated.Experimental results show that system-on-chip integrating power reception together with other electronic functions of smart card applications is feasible.In a 6×10 -4T magnetic field of 22.5MHz,an on-chip power of 1.225mW for a 10kΩ load is obtained using a 4mm2 on-chip antenna.
