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Gas Sensor Based on Interdigitated Gate Electrode Field Effect Transistor
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作者 Tong Zhang Sheng Qiang +4 位作者 Frank Lewis Edward S.Kolesar Yalin Wu Xiaozhu Chi Hongquan Zhang 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2006年第A03期140-142,共3页
The paper presents a new method for fabricating a gas-sensitive micro-sensor based on MEMS.The primary target agents are nitrogen dioxides (NO_2),and DIMP.Past-per-billion concentration levels of these two chemicals c... The paper presents a new method for fabricating a gas-sensitive micro-sensor based on MEMS.The primary target agents are nitrogen dioxides (NO_2),and DIMP.Past-per-billion concentration levels of these two chemicals can be detected.An interdigitated gate electrode field-effect transistor (IGEFET) has been coupled with a chemically-active and electron-beam evaporated copper phthaiocyanine (CuPc) thin film to implement a gas-sensitive micro-sensor.The sensor is excited with voltage pulse.Time and frequency-domain response were measured.The magnitude of the normalized difference Fourier transform is distinct distinguished. 展开更多
关键词 igefet sensor (NO2) DIMP Fourier transform
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