Despite scarce studies have analyzed the relative growth inhibition of As (III) and As (V) to diatom, clear pattern of interspecies difference have been shown, identifying cell size as a key property determining the s...Despite scarce studies have analyzed the relative growth inhibition of As (III) and As (V) to diatom, clear pattern of interspecies difference have been shown, identifying cell size as a key property determining the sensitivity of diatom to As. Evidence from cultures suggests that cell size is a key factor in determining the extent of arsenic (III) & (V) stress of diatom, with relatively lesser effects of As (V) than As (III) on small cells. Cent percent growth inhibition was observed for large size group (Coscinodiscus radiatus, Surirella, Amphipleura, Thalassiothrix, Cyclotella and Thalassiosira decipiens) relative to smaller size group (Skeletonema cf. costatum, Navicula rhombica, Amphora hyaline, Nitzschia longissima except Thalassisira. Interspecies differences in As tolerance by diatom in the mangrove ecosystem indicates cell size could be only one factor contributing to these differences. The results show that 81.7% of total arsenic was uptaken from culture media originally amended with arsenic. Looking to the extreme tolerance and arsenic removal efficiency, application of the species with smaller cell size relative to the other tested diatom for bioremediation purpose can be envisaged.展开更多
In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junction...In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junctions in Si (1), elaboration of structurally perfect GaAs/Ge/Si epitaxial substrates (2) and application of protective antireflecting coatings based on cubic zirconia (3). As a result: 1) New technique of forming p-n junctions in silicon has been elaborated. The technique provided easy and comparatively cheap process of production of semiconductor devices such as solar cells. The essence of the technique under the study is comprised in formation p-n junctions in silicon by a change of conductivity in the bulk of the sample occurring as a result of redistribution of the impurities, which already exists in the sample before its processing by ions. It differs from the techniques of diffusion and ion doping where change of conductivity and formation of p-n junction in the sample occur as a result of introduction of atoms of the other dopants from the outside;2) The conditions for synthesis of GaAs/Ge/Si epitaxial substrates with a thin (200 nm) Ge buffer layer featured with (1 - 2) × 105 cm-2 density of the threading dislocation in the GaAs layer. Ge buffer was obtained by chemical vapor deposition with a hot wire and GaAs layer of 1 μm thick was grown by the metal organic chemical vapor deposition. Root mean square surface roughness of GaAs layers of the less than 1 nm and good photoluminescence properties along with their high uniformity were obtained;3) The conditions ensuring the synthesis of uniform functional (buffer, insulating and protective) fianite layers on Si and GaAs substrates by means of magnetron and electron-beam sputtering have been determined. Fianite films have been shown to be suitable for the use as an ideal anti-reflecting material with high protective and anticorrosive properties.展开更多
The effect of doping concentrations and a transverse external magnetostatic field on operational characteristics of parametric amplification of backward Stokes signal has been studied, using hydrodynamic model of semi...The effect of doping concentrations and a transverse external magnetostatic field on operational characteristics of parametric amplification of backward Stokes signal has been studied, using hydrodynamic model of semiconductors, in the far infrared regime. The model suggests three achievable resonance conditions: (i) lattice frequency and plasma frequency (ii) stokes frequency and electron-cyclotron frequency (iii) stokes frequency and hybrid (plasma and electron-cyclotron) frequency and these conditions have been utilised, on one hand, to substantially reduce the value of threshold intensity for onset of the parametric amplification and on the other hand, for switching of parametric large positive and negative gain coefficient (i.e. amplification and absorption). For example a strong transverse magnetostatic field 10.0 T with free carrier concentration 1.5 x 1019m-3 enhances the gain by a factor of 103 as in its absence. Results also suggest that a weakly piezoelectric III–V semiconductor duly illuminated by slightly off-resonant not-too-high-power pulsed lasers with pulse duration sufficiently larger than the acoustic phonon lifetime is one of promising hosts for parametric amplifier/frequency converter.展开更多
The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal- organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomi...The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal- organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomic force microscopy results show that triangular pits are formed at a relatively high V/III ratio, while a relatively low V/III ratio can enhance the lateral growth rate along the c-axis direction. The higher V/III ratio leads to a high density of pits in comparison with the lower V/III ratio. The surface morphology is improved greatly by using a low V/III ratio of 500 and the roughness mean square of the surface is only 3.9 nm. The high resolution X-ray diffraction characterized crystal structural results show that the rocking curve full width at half maximum along the m axis decreases from 0.757° to 0.720°, while along the c axis increases from 0.220° to 0.251° with the V/III increasing from 500 μmol/min to 2000 μmol/min, which indicates that a relatively low V/III ratio is conducible to the c-axis growth of a-plane GaN.展开更多
We report an effective enhancement in light extraction of Ga N-based light-emitting diodes（LEDs） with an Al-doped Zn O（AZO） transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 in...We report an effective enhancement in light extraction of Ga N-based light-emitting diodes（LEDs） with an Al-doped Zn O（AZO） transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent throughpore anodic aluminum oxide（AAO） membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 m A and 56% at 100 m A compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage.展开更多
In situ resistivity measurement has been performed to investigate the electron transport property of powered CdTe under high pressure and moderate temperature in a designed diamond anvil cell. Several abnormal resisti...In situ resistivity measurement has been performed to investigate the electron transport property of powered CdTe under high pressure and moderate temperature in a designed diamond anvil cell. Several abnormal resistivity changes can be found at room temperature when the pressure increases from ambient to 33 GPa. The abnormal resistivity changes at about 3.8 GPa and 10 GPa are caused by the structural phase transitions to the rock-salt phase and to the Cmcm phase, respectively. The other abnormal resistivity changes at about 6.5 GPa, 15.5 GPa, 22.2 GPa and about 30 GPa never observed before are due to the electronic phase transitions of CdTe. The origin of the abnormal change occurred at about 6.5 GPa is discussed. The temperature dependence of the resistivity of CdTe shows its semiconducting behaviour at least before 11.3 GPa.展开更多
In view of the important application of GaAs and GaN photocathodes in electron sources, differences in photoe- mission behaviour, namely the activation process and quantum yield decay, between the two typical types of...In view of the important application of GaAs and GaN photocathodes in electron sources, differences in photoe- mission behaviour, namely the activation process and quantum yield decay, between the two typical types of III-V compound photocathodes have been investigated using a multi-information measurement system. The activation exper- iment shows that a surface negative electron affinity state for the GaAs photocathode can be achieved by the necessary Cs-O two-step activation and by Cs activation alone for the GaN photocathode. In addition, a quantum yield decay experiment shows that the GaN photocathode exhibits better stability and a longer lifetime in a demountable vacuum system than the GaAs photocathode. The results mean that GaN photocathodes are more promising candidates for electron source emitter use in comparison with GaAs photocathodes.展开更多
GaN rods were deposited by chemical vapor deposition (CVD) onto sapphire (0 0 0 1) and amorphous quartz. The reactive Ga species in vapor the phase was formed with NH4Cl and gallium. The unidirectional growth was cata...GaN rods were deposited by chemical vapor deposition (CVD) onto sapphire (0 0 0 1) and amorphous quartz. The reactive Ga species in vapor the phase was formed with NH4Cl and gallium. The unidirectional growth was catalyzed with gold nanoparticles formed onto the substrate prior to the CVD reaction in order to induce a vapor-liquid-solid (VLS) mechanism. However, this method of synthesis seems to be influenced by other growth mechanisms which formed additional depositions of GaN with different morphology than the rods catalyzed by gold nanoparticles. The moieties of GaN that grew in the absence of gold formed branches in the rods or increased the lateral growth of rods resulting in larger diameters than the size of the gold particle that guided the growth.展开更多
AlN powders are prepared by direct nitridation via Al liquid and vapor phases in mixed atmospheres of N2 and NH3 with different NH3/N2 ratios. The reaction analysis reveals that NH3 acts as catalyst for N2 dissociatio...AlN powders are prepared by direct nitridation via Al liquid and vapor phases in mixed atmospheres of N2 and NH3 with different NH3/N2 ratios. The reaction analysis reveals that NH3 acts as catalyst for N2 dissociation and the transportations of N, O, and Al in the liquid phase are different from those in the vapor phase. Accordingly, the products are Al-rich and composition-tunable nonstoichiometric AlN in which N, O, and Al content values change with nitridation atmosphere and temperature, leading to the variation of the relevant defect concentration. Therefore, the AlN powders exhibit prominent absorption bands around 5.30, 3.40, and 1.50 eV, which are tentatively assigned to VN, ON donors, and AlN acceptor respectively. Furthermore, a new donor named [VN-ON] complex is predicted at 4.40 eV within the 5.90 eV bandgap. It is demonstrated that the optical spectra of nonstoichiometric AlN are preferable to the nominal stoichimometric one for the identification of the defects energy level.展开更多
The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane A1GaN films grown by metalorganic vapour phase epitaxy （MOVPE） are investigated. It is found that the aluminum content in A-plane A1GaN f...The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane A1GaN films grown by metalorganic vapour phase epitaxy （MOVPE） are investigated. It is found that the aluminum content in A-plane A1GaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 ℃. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the V/Ⅲ ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the A1GaN films, especially nonpolar A1GaN epilayers.展开更多
Luminescence decay and time resolved photoluminescence(TRPL) spectra are used for study on the transient luminescence process of the nominally disordered GaInP alloy. The luminescence decay of GaInP alloy shows the te...Luminescence decay and time resolved photoluminescence(TRPL) spectra are used for study on the transient luminescence process of the nominally disordered GaInP alloy. The luminescence decay of GaInP alloy shows the temperature and excitation intensity dependent characters. At 77 K and under high excitation intensity, the luminescence decay shows single exponential time dependence, while under low excitation intensity or at 300 K, the luminescence decay shows double exponential time dependence. The analysis indicates that this nominally disordered GaInP alloy actually exhibits a very weak degree of order. The blue shift of PL peak is observed in the TRPL spectra at 77 K, which is derived from the transfer of the carriers from the ordered domain to the disordered region of the alloy. At 300 K, due to the thermal quenching, the transfer is too weak to be observed. However, The recombination of the carriers between the ordered domain and the disordered region is still devoted to luminesce.展开更多
Seasonal variation of antimony was studied in order to characterize its distribution in estuarine water, pore water, sediment, and digenetic behavior in the Sundarbans mangrove ecosystem. The mean concentration of dis...Seasonal variation of antimony was studied in order to characterize its distribution in estuarine water, pore water, sediment, and digenetic behavior in the Sundarbans mangrove ecosystem. The mean concentration of dissolved inorganic Sb ranged between 230.8 and 303.1 ng L–1 over the period of study with a minimum during the post-monsoon closely associated with spring diatom bloom. Molecular diffusion flux of Sb was found greater than its value advected and deposited on sediment-water interface and there was significant remobilization of Sb in the Sundarbans mangrove ecosystem.展开更多
Non-polar a-plane （1120） GaN films have been grown on r-plane （1102） sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane Ga...Non-polar a-plane （1120） GaN films have been grown on r-plane （1102） sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane GaN films were investigated by scanning electron microscopy, cathodoluminescence and high-resolution x-ray diffraction measurements. The anisotropy of a-plane GaN films may result from the different migration length of adatoms along two in-plane directions. V/III ratio has an effect on the growth rates of different facets and crystal quality. The stripe feature morphology was obviously observed in the film with a high V/III ratio because of the slow growth rate along the [1100] direction. When the V/III ratio increased from 1000 to 6000, the in-plane crystal quality anisotropy was decreased due to the weakened predominance in migration length of gallium adatoms.展开更多
The effects of V/Ill growth flux ratio on a-plane GaN films grown on r-plane sapphire substrates with an InGaN interlayer are investigated. The surface morphology, crystalline quality, strain states, and density of ba...The effects of V/Ill growth flux ratio on a-plane GaN films grown on r-plane sapphire substrates with an InGaN interlayer are investigated. The surface morphology, crystalline quality, strain states, and density of basal stacking faults were found to depend heavily upon the V/III ratio. With decreasing V/III ratio, the surface morphology and crystal quality first improved and then deteriorated, and the density of the basal-plane stacking faults also first decreased and then increased. The optimal V/III ratio growth condition for the best surface morphology and crystalline quality and the smallest basal-plane stacking fault density of a-GaN films are found. We also found that the formation of basal-plane stacking faults is an effective way to release strain.展开更多
文摘Despite scarce studies have analyzed the relative growth inhibition of As (III) and As (V) to diatom, clear pattern of interspecies difference have been shown, identifying cell size as a key property determining the sensitivity of diatom to As. Evidence from cultures suggests that cell size is a key factor in determining the extent of arsenic (III) & (V) stress of diatom, with relatively lesser effects of As (V) than As (III) on small cells. Cent percent growth inhibition was observed for large size group (Coscinodiscus radiatus, Surirella, Amphipleura, Thalassiothrix, Cyclotella and Thalassiosira decipiens) relative to smaller size group (Skeletonema cf. costatum, Navicula rhombica, Amphora hyaline, Nitzschia longissima except Thalassisira. Interspecies differences in As tolerance by diatom in the mangrove ecosystem indicates cell size could be only one factor contributing to these differences. The results show that 81.7% of total arsenic was uptaken from culture media originally amended with arsenic. Looking to the extreme tolerance and arsenic removal efficiency, application of the species with smaller cell size relative to the other tested diatom for bioremediation purpose can be envisaged.
文摘In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junctions in Si (1), elaboration of structurally perfect GaAs/Ge/Si epitaxial substrates (2) and application of protective antireflecting coatings based on cubic zirconia (3). As a result: 1) New technique of forming p-n junctions in silicon has been elaborated. The technique provided easy and comparatively cheap process of production of semiconductor devices such as solar cells. The essence of the technique under the study is comprised in formation p-n junctions in silicon by a change of conductivity in the bulk of the sample occurring as a result of redistribution of the impurities, which already exists in the sample before its processing by ions. It differs from the techniques of diffusion and ion doping where change of conductivity and formation of p-n junction in the sample occur as a result of introduction of atoms of the other dopants from the outside;2) The conditions for synthesis of GaAs/Ge/Si epitaxial substrates with a thin (200 nm) Ge buffer layer featured with (1 - 2) × 105 cm-2 density of the threading dislocation in the GaAs layer. Ge buffer was obtained by chemical vapor deposition with a hot wire and GaAs layer of 1 μm thick was grown by the metal organic chemical vapor deposition. Root mean square surface roughness of GaAs layers of the less than 1 nm and good photoluminescence properties along with their high uniformity were obtained;3) The conditions ensuring the synthesis of uniform functional (buffer, insulating and protective) fianite layers on Si and GaAs substrates by means of magnetron and electron-beam sputtering have been determined. Fianite films have been shown to be suitable for the use as an ideal anti-reflecting material with high protective and anticorrosive properties.
文摘The effect of doping concentrations and a transverse external magnetostatic field on operational characteristics of parametric amplification of backward Stokes signal has been studied, using hydrodynamic model of semiconductors, in the far infrared regime. The model suggests three achievable resonance conditions: (i) lattice frequency and plasma frequency (ii) stokes frequency and electron-cyclotron frequency (iii) stokes frequency and hybrid (plasma and electron-cyclotron) frequency and these conditions have been utilised, on one hand, to substantially reduce the value of threshold intensity for onset of the parametric amplification and on the other hand, for switching of parametric large positive and negative gain coefficient (i.e. amplification and absorption). For example a strong transverse magnetostatic field 10.0 T with free carrier concentration 1.5 x 1019m-3 enhances the gain by a factor of 103 as in its absence. Results also suggest that a weakly piezoelectric III–V semiconductor duly illuminated by slightly off-resonant not-too-high-power pulsed lasers with pulse duration sufficiently larger than the acoustic phonon lifetime is one of promising hosts for parametric amplifier/frequency converter.
基金supported by the Special Funds for Major State Basic Research Project of China (Grant No. 2011CB301900)High Technology Research Program of China (Grant No. 2009AA03A198)+2 种基金the National Natural Science Foundation of China (Grant Nos. 60990311, 60721063, 60906025, 60936004, 60731160628, and 60820106003)the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK2008019, BK2010385, BK2009255, and BK2010178)the Research Funds from NJU-Yangzhou Institute of Opto-electronics, China
文摘The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal- organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomic force microscopy results show that triangular pits are formed at a relatively high V/III ratio, while a relatively low V/III ratio can enhance the lateral growth rate along the c-axis direction. The higher V/III ratio leads to a high density of pits in comparison with the lower V/III ratio. The surface morphology is improved greatly by using a low V/III ratio of 500 and the roughness mean square of the surface is only 3.9 nm. The high resolution X-ray diffraction characterized crystal structural results show that the rocking curve full width at half maximum along the m axis decreases from 0.757° to 0.720°, while along the c axis increases from 0.220° to 0.251° with the V/III increasing from 500 μmol/min to 2000 μmol/min, which indicates that a relatively low V/III ratio is conducible to the c-axis growth of a-plane GaN.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61204049 and 51402366)Guangdong Natural Science Foundation,China(Grant No.S2012040007363)Foundation for Distinguished Young Talents in Higher Education of Guangdong,China(Grant Nos.2012LYM 0058 and2013LYM 0022)
文摘We report an effective enhancement in light extraction of Ga N-based light-emitting diodes（LEDs） with an Al-doped Zn O（AZO） transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent throughpore anodic aluminum oxide（AAO） membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 m A and 56% at 100 m A compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage.
基金Supported by the National Natural Science Foundation of China under Grant Nos 40473034, 40404007, 10574055, and 50532020, and the National Basic Research Programme of China under Grant No 2005CB724404. To whom correspondence should be addressed.
文摘In situ resistivity measurement has been performed to investigate the electron transport property of powered CdTe under high pressure and moderate temperature in a designed diamond anvil cell. Several abnormal resistivity changes can be found at room temperature when the pressure increases from ambient to 33 GPa. The abnormal resistivity changes at about 3.8 GPa and 10 GPa are caused by the structural phase transitions to the rock-salt phase and to the Cmcm phase, respectively. The other abnormal resistivity changes at about 6.5 GPa, 15.5 GPa, 22.2 GPa and about 30 GPa never observed before are due to the electronic phase transitions of CdTe. The origin of the abnormal change occurred at about 6.5 GPa is discussed. The temperature dependence of the resistivity of CdTe shows its semiconducting behaviour at least before 11.3 GPa.
基金supported by the National Natural Science Foundation of China (Grant Nos. 60801036 and 61067001)the Research and Innovation Plan for Graduate Students of Jiangsu Higher Education Institutions (Grant No. CX09B 096Z)the Research Foundation of Nanjing University of Science and Technology (Grant No. 2010ZYTS032)
文摘In view of the important application of GaAs and GaN photocathodes in electron sources, differences in photoe- mission behaviour, namely the activation process and quantum yield decay, between the two typical types of III-V compound photocathodes have been investigated using a multi-information measurement system. The activation exper- iment shows that a surface negative electron affinity state for the GaAs photocathode can be achieved by the necessary Cs-O two-step activation and by Cs activation alone for the GaN photocathode. In addition, a quantum yield decay experiment shows that the GaN photocathode exhibits better stability and a longer lifetime in a demountable vacuum system than the GaAs photocathode. The results mean that GaN photocathodes are more promising candidates for electron source emitter use in comparison with GaAs photocathodes.
文摘GaN rods were deposited by chemical vapor deposition (CVD) onto sapphire (0 0 0 1) and amorphous quartz. The reactive Ga species in vapor the phase was formed with NH4Cl and gallium. The unidirectional growth was catalyzed with gold nanoparticles formed onto the substrate prior to the CVD reaction in order to induce a vapor-liquid-solid (VLS) mechanism. However, this method of synthesis seems to be influenced by other growth mechanisms which formed additional depositions of GaN with different morphology than the rods catalyzed by gold nanoparticles. The moieties of GaN that grew in the absence of gold formed branches in the rods or increased the lateral growth of rods resulting in larger diameters than the size of the gold particle that guided the growth.
文摘AlN powders are prepared by direct nitridation via Al liquid and vapor phases in mixed atmospheres of N2 and NH3 with different NH3/N2 ratios. The reaction analysis reveals that NH3 acts as catalyst for N2 dissociation and the transportations of N, O, and Al in the liquid phase are different from those in the vapor phase. Accordingly, the products are Al-rich and composition-tunable nonstoichiometric AlN in which N, O, and Al content values change with nitridation atmosphere and temperature, leading to the variation of the relevant defect concentration. Therefore, the AlN powders exhibit prominent absorption bands around 5.30, 3.40, and 1.50 eV, which are tentatively assigned to VN, ON donors, and AlN acceptor respectively. Furthermore, a new donor named [VN-ON] complex is predicted at 4.40 eV within the 5.90 eV bandgap. It is demonstrated that the optical spectra of nonstoichiometric AlN are preferable to the nominal stoichimometric one for the identification of the defects energy level.
基金supported by the National Natural Science Foundation of China(Grant Nos.61504128,61504129,61274041,and 11275228)the National Basic Research Program of China(Grant No.2012CB619305)+1 种基金the National High Technology Research and Development Program of China(Grant Nos.2014AA032603,2014AA032609,and 2015AA010801)the Guangdong Provincial Scientific and Technologic Planning Program,China(Grant No.2014B010119002)
文摘The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane A1GaN films grown by metalorganic vapour phase epitaxy （MOVPE） are investigated. It is found that the aluminum content in A-plane A1GaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 ℃. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the V/Ⅲ ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the A1GaN films, especially nonpolar A1GaN epilayers.
文摘Luminescence decay and time resolved photoluminescence(TRPL) spectra are used for study on the transient luminescence process of the nominally disordered GaInP alloy. The luminescence decay of GaInP alloy shows the temperature and excitation intensity dependent characters. At 77 K and under high excitation intensity, the luminescence decay shows single exponential time dependence, while under low excitation intensity or at 300 K, the luminescence decay shows double exponential time dependence. The analysis indicates that this nominally disordered GaInP alloy actually exhibits a very weak degree of order. The blue shift of PL peak is observed in the TRPL spectra at 77 K, which is derived from the transfer of the carriers from the ordered domain to the disordered region of the alloy. At 300 K, due to the thermal quenching, the transfer is too weak to be observed. However, The recombination of the carriers between the ordered domain and the disordered region is still devoted to luminesce.
文摘Seasonal variation of antimony was studied in order to characterize its distribution in estuarine water, pore water, sediment, and digenetic behavior in the Sundarbans mangrove ecosystem. The mean concentration of dissolved inorganic Sb ranged between 230.8 and 303.1 ng L–1 over the period of study with a minimum during the post-monsoon closely associated with spring diatom bloom. Molecular diffusion flux of Sb was found greater than its value advected and deposited on sediment-water interface and there was significant remobilization of Sb in the Sundarbans mangrove ecosystem.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60676032, 60577030 and 60476028)the National Basic Research Program of China (Grant No. 2007CB307004)the National Science Foundation for Post-doctoral Scientists of China (Grant No. 20060400018)
文摘Non-polar a-plane （1120） GaN films have been grown on r-plane （1102） sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane GaN films were investigated by scanning electron microscopy, cathodoluminescence and high-resolution x-ray diffraction measurements. The anisotropy of a-plane GaN films may result from the different migration length of adatoms along two in-plane directions. V/III ratio has an effect on the growth rates of different facets and crystal quality. The stripe feature morphology was obviously observed in the film with a high V/III ratio because of the slow growth rate along the [1100] direction. When the V/III ratio increased from 1000 to 6000, the in-plane crystal quality anisotropy was decreased due to the weakened predominance in migration length of gallium adatoms.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.91233111,61274041,11275228,61006004,and 61076001)the Special Funds for Major State Basic Research Project (973 Program) of China (Grant No.2012CB619305)+1 种基金the 863 High Technology R&D Program of China (Grant No.2011AA03A101)the Special Fund for LED Industrial Development of Guangdong Province of China (Grant No.2012A080302003)
文摘The effects of V/Ill growth flux ratio on a-plane GaN films grown on r-plane sapphire substrates with an InGaN interlayer are investigated. The surface morphology, crystalline quality, strain states, and density of basal stacking faults were found to depend heavily upon the V/III ratio. With decreasing V/III ratio, the surface morphology and crystal quality first improved and then deteriorated, and the density of the basal-plane stacking faults also first decreased and then increased. The optimal V/III ratio growth condition for the best surface morphology and crystalline quality and the smallest basal-plane stacking fault density of a-GaN films are found. We also found that the formation of basal-plane stacking faults is an effective way to release strain.
