The Integrated Marine Observing System [IMOS] is an Australian national program for observing the oceans around Australia. As one of its important nodes, the New South Wales Integrated Marine Observing System （NSW-IM...The Integrated Marine Observing System [IMOS] is an Australian national program for observing the oceans around Australia. As one of its important nodes, the New South Wales Integrated Marine Observing System （NSW-IMOS] aims to provide more accurate descriptions of the East Australian Current [EAC]. The purpose of this paper is to evaluate the potential economic benefits from NSW-IMOS. Six related sectors which can potentially be among its main beneficiaries are considered： beach recreation, commercial fishing, recreational fishing, recreational boating, natural hazard predictions, and oil spill mitigation. The 1% constant percentage increase evaluation method is used to estimate the potential economic benefits to these six beneficiaries. By using this method, our study shows that the total potential economic benefit for these sectors is estimated to be $ 6.07 million per year. We consider that this is indicative but not conclusive in demonstrating some of the potential economic benefits that can be provided from information gathered by NSW-IMOS facilities. We conclude with further evaluative approaches that could be used to provide more accurate estimates of potential economic benefits.展开更多
The study comparatively analysed the socioeconomic characteristics and digital literacy level of Agricultural Extension personnel (AEP) in Ebonyi and Imo States, South-East, Nigeria. The specific objectives were to de...The study comparatively analysed the socioeconomic characteristics and digital literacy level of Agricultural Extension personnel (AEP) in Ebonyi and Imo States, South-East, Nigeria. The specific objectives were to describe the socioeconomic characteristics of agricultural extension personnel in Ebonyi and Imo States, and to ascertain the digital literacy level of AEP in the studied states. Purposive sampling technique was used to select 312 Agricultural Extension personnel (132 from Ebonyi State Agricultural Development Program and 180 from Imo State Agricultural Development Program) for the study. Data were collected through the use of validated and structured questionnaire, and administered through the help of well-trained enumerators. Data were analysed using simple descriptive statistical tools such as percentages mean score, standard deviation and weighted mean. Findings indicated that they were more male in the both States (55.3% and 57.8%) for Ebonyi and Imo State respectively and that the average age of AEP in Ebonyi and Imo States were 44.7 years and 49.2 years respectively. It was further revealed that the majority (77.3% and 82.8%) had B.Sc./HND as their highest academic qualifications, belonged to professional organisations (62.1% and 75%), and were earning an average monthly income of N58,798 and N62,648 for Ebonyi and Imo State respectively. Also, it was revealed that their mean years of service were 12.4 years and 13.4 years for Ebonyi and Imo State respectively. Almost all of them (87.9% and 95.0%) own a smartphone, had access to the internet (80.3% and 90.0%), but do not own a laptop/ipad (82.6% and 72.8%) for Ebon-yi and Imo State respectively. Results further revealed that Agricultural extension personnel in both Ebonyi and Imo State respectively had low digital literacy level ( = 2.41 and 2.32). The study concluded that AEP in Ebonyi and Imo State respectively had similar socioeconomic characteristics and low level of digital literacy. The study recommended that the management of ADPs in both Ebonyi and Imo State should ensure the training of AEP in digital skills to enhance their digital literacy level to enable them use digital technologies in their work.展开更多
An impact ionization MOSFET （IMOS） is evolved for overcoming the constraint of less than 60 mV/decade sub-threshold slope （SS） of conventional MOSFET at room temperature. In this work, first, the device performanc...An impact ionization MOSFET （IMOS） is evolved for overcoming the constraint of less than 60 mV/decade sub-threshold slope （SS） of conventional MOSFET at room temperature. In this work, first, the device performance of the p-type double gate impact ionization MOSFET （DG-IMOS） is optimized by adjusting the device design parameters. The adjusted parameters are ratio of gate and intrinsic length, gate dielectric thickness and gate work function. Secondly, the DMG （dual material gate） DG-IMOS is proposed and investigated. This DMG DG-IMOS is further optimized to obtain the best possible performance parameters. Simulation results reveal that DMG DG-IMOS when compared to DG-IMOS, shows better IoN, ION/IoFF ratio, and RF parameters. Results show that by properly tuning the lengths of two materials at a ratio of 1.5 in DMG DG-IMOS, optimized perform- ance is achieved including ION/IoFF ratio of 2.87 × 10^9 A/μm with/ON as 11.87 × 10^-4 A/μm and transconductance of 1.06× 10^-3 S/μm. It is analyzed that length of drain side material should be greater than the length of source side material to attain the higher transconductance in DMG DG-IMOS.展开更多
We propose a unique approach for realizing dopingless impact ionization MOS （DL-IMOS） based on the charge plasma concept as a remedy for complex process flow. It uses work-function engineering of electrodes to form ...We propose a unique approach for realizing dopingless impact ionization MOS （DL-IMOS） based on the charge plasma concept as a remedy for complex process flow. It uses work-function engineering of electrodes to form charge plasma as surrogate doping. This charge plasma induces a uniform p-region in the source side and an n-region in the drain side on intrinsic silicon film with a thickness less than the intrinsic Debye length. DL-IMOS offers a simple fabrication process flow as it avoids the need of ion implantation, photo masking and complicated thermal budget via annealing devices. The lower thermal budget is required for DL-IMOS fabrication enables its fabrication on single crystal silicon-on-glass substrate realized by wafer scale epitaxial transfer. It is highly immune to process variations, doping control issues and random dopant fluctuations, while retaining the inherent advantages of conventional IMOS. To epitomize the fabrication process flow for the proposed device a virtual fabrication flow is also proposed here. Extensive device simulation of the major device performance metrics such as subthreshold slope, threshold voltage, drain induced current enhancement, and breakdown voltage have been done for a wide range of electrodes work-function. To evaluate the potential applications of the proposed device at circuit level, its mixed mode simulations are also carried out.展开更多
文摘The Integrated Marine Observing System [IMOS] is an Australian national program for observing the oceans around Australia. As one of its important nodes, the New South Wales Integrated Marine Observing System （NSW-IMOS] aims to provide more accurate descriptions of the East Australian Current [EAC]. The purpose of this paper is to evaluate the potential economic benefits from NSW-IMOS. Six related sectors which can potentially be among its main beneficiaries are considered： beach recreation, commercial fishing, recreational fishing, recreational boating, natural hazard predictions, and oil spill mitigation. The 1% constant percentage increase evaluation method is used to estimate the potential economic benefits to these six beneficiaries. By using this method, our study shows that the total potential economic benefit for these sectors is estimated to be $ 6.07 million per year. We consider that this is indicative but not conclusive in demonstrating some of the potential economic benefits that can be provided from information gathered by NSW-IMOS facilities. We conclude with further evaluative approaches that could be used to provide more accurate estimates of potential economic benefits.
文摘The study comparatively analysed the socioeconomic characteristics and digital literacy level of Agricultural Extension personnel (AEP) in Ebonyi and Imo States, South-East, Nigeria. The specific objectives were to describe the socioeconomic characteristics of agricultural extension personnel in Ebonyi and Imo States, and to ascertain the digital literacy level of AEP in the studied states. Purposive sampling technique was used to select 312 Agricultural Extension personnel (132 from Ebonyi State Agricultural Development Program and 180 from Imo State Agricultural Development Program) for the study. Data were collected through the use of validated and structured questionnaire, and administered through the help of well-trained enumerators. Data were analysed using simple descriptive statistical tools such as percentages mean score, standard deviation and weighted mean. Findings indicated that they were more male in the both States (55.3% and 57.8%) for Ebonyi and Imo State respectively and that the average age of AEP in Ebonyi and Imo States were 44.7 years and 49.2 years respectively. It was further revealed that the majority (77.3% and 82.8%) had B.Sc./HND as their highest academic qualifications, belonged to professional organisations (62.1% and 75%), and were earning an average monthly income of N58,798 and N62,648 for Ebonyi and Imo State respectively. Also, it was revealed that their mean years of service were 12.4 years and 13.4 years for Ebonyi and Imo State respectively. Almost all of them (87.9% and 95.0%) own a smartphone, had access to the internet (80.3% and 90.0%), but do not own a laptop/ipad (82.6% and 72.8%) for Ebon-yi and Imo State respectively. Results further revealed that Agricultural extension personnel in both Ebonyi and Imo State respectively had low digital literacy level ( = 2.41 and 2.32). The study concluded that AEP in Ebonyi and Imo State respectively had similar socioeconomic characteristics and low level of digital literacy. The study recommended that the management of ADPs in both Ebonyi and Imo State should ensure the training of AEP in digital skills to enhance their digital literacy level to enable them use digital technologies in their work.
文摘An impact ionization MOSFET （IMOS） is evolved for overcoming the constraint of less than 60 mV/decade sub-threshold slope （SS） of conventional MOSFET at room temperature. In this work, first, the device performance of the p-type double gate impact ionization MOSFET （DG-IMOS） is optimized by adjusting the device design parameters. The adjusted parameters are ratio of gate and intrinsic length, gate dielectric thickness and gate work function. Secondly, the DMG （dual material gate） DG-IMOS is proposed and investigated. This DMG DG-IMOS is further optimized to obtain the best possible performance parameters. Simulation results reveal that DMG DG-IMOS when compared to DG-IMOS, shows better IoN, ION/IoFF ratio, and RF parameters. Results show that by properly tuning the lengths of two materials at a ratio of 1.5 in DMG DG-IMOS, optimized perform- ance is achieved including ION/IoFF ratio of 2.87 × 10^9 A/μm with/ON as 11.87 × 10^-4 A/μm and transconductance of 1.06× 10^-3 S/μm. It is analyzed that length of drain side material should be greater than the length of source side material to attain the higher transconductance in DMG DG-IMOS.
文摘We propose a unique approach for realizing dopingless impact ionization MOS （DL-IMOS） based on the charge plasma concept as a remedy for complex process flow. It uses work-function engineering of electrodes to form charge plasma as surrogate doping. This charge plasma induces a uniform p-region in the source side and an n-region in the drain side on intrinsic silicon film with a thickness less than the intrinsic Debye length. DL-IMOS offers a simple fabrication process flow as it avoids the need of ion implantation, photo masking and complicated thermal budget via annealing devices. The lower thermal budget is required for DL-IMOS fabrication enables its fabrication on single crystal silicon-on-glass substrate realized by wafer scale epitaxial transfer. It is highly immune to process variations, doping control issues and random dopant fluctuations, while retaining the inherent advantages of conventional IMOS. To epitomize the fabrication process flow for the proposed device a virtual fabrication flow is also proposed here. Extensive device simulation of the major device performance metrics such as subthreshold slope, threshold voltage, drain induced current enhancement, and breakdown voltage have been done for a wide range of electrodes work-function. To evaluate the potential applications of the proposed device at circuit level, its mixed mode simulations are also carried out.
