This paper presents the simulation results of DC,small-signal and noise properties of GaP based Double Drift Region( DDR) Impact Avalanche Transit Time( IMPATT) diodes. In simulation study we have considered the flat ...This paper presents the simulation results of DC,small-signal and noise properties of GaP based Double Drift Region( DDR) Impact Avalanche Transit Time( IMPATT) diodes. In simulation study we have considered the flat DDR structures of IMPATT diode based on GaP,GaAs,Si and GaN( wurtzite,wz) material. The diodes are designed to operate at the millimeter window frequencies of 94 GHz and 220 GHz. The simulation results of these diodes reveal GaP is a promising material for IMPATT applications based on DDR structure with high break down voltage( V_B) as compared to Si and GaAs IMPATTs. It is also encouraging to worth note GaP base IMPATT diode shows a better output power density of 4. 9 × 10~9 W/m^2 as compared to Si and GaAs based IMPATT diode. But IMPATT diode based on GaN( wz) displays large values of break down voltage,efficiency and power density as compared to Si,GaAs and GaP IMPATTs.展开更多
The silicon epitaxial wafter for X band double Read-type DDR IMPATT diodes has been fabricatedby normal-low pressure growth technique. The hyperabrupt impurity profile and very thin p-layer, n-layerwere achieved.
The influence of self-heating on the millimeter-wave(mm-wave)and terahertz(THz)performance of double-drift region(DDR)impact avalanche transit time(IMPATT)sources based on silicon(Si)has been investigated in this pape...The influence of self-heating on the millimeter-wave(mm-wave)and terahertz(THz)performance of double-drift region(DDR)impact avalanche transit time(IMPATT)sources based on silicon(Si)has been investigated in this paper.The dependences of static and large-signal parameters on junction temperature are estimated using a non-sinusoidal voltage excited(NSVE)large-signal simulation technique developed by the authors,which is based on the quantum-corrected drift-diffusion(QCDD)model.Linear variations of static parameters and non-linear variations of large-signal parameters with temperature have been observed.Analytical expressions representing the temperature dependences of static and large-signal parameters of the diodes are developed using linear and 2nd degree polynomial curve fitting techniques,which will be highly useful for optimizing the thermal design of the oscillators.Finally,the simulated results are found to be in close agreement with the experimentally measured data.展开更多
Simulation studies are made on the large-signal RF performance and avalanche noise properties ofhet- erojunction double-drift region （DDR） impact avalanche transit time （IMPATT） diodes based on AlxGal-xN/GaN mater...Simulation studies are made on the large-signal RF performance and avalanche noise properties ofhet- erojunction double-drift region （DDR） impact avalanche transit time （IMPATT） diodes based on AlxGal-xN/GaN material system designed to operate at 1.0 THz frequency. Two different heterojunction DDR structures such as n-Al0.4Ga0.6N/p-GaN and n-GaN/p-Al0.4Ga0.6N are proposed in this study. The large-signal output power, con- version efficiency and noise properties of the heterojunction DDR IMPATTs are compared with homojunction DDR IMPATT devices based on GaN and Al0.4Ga0.6N. The results show that the n-Al0.4Ga0.6N/p-GaN heterojunction DDR device not only surpasses the n-GaN/p-Al0.4Ga0.6N DDR device but also homojunction DDR IMPATTs based on GaN and Al0.4Ga0.6N as regards large-signal conversion efficiency, power output and avalanche noise performance at 1.0 THz.展开更多
Large-signal （L-S） characterizations of double-drift region （DDR） impact avalanche transit time （IM- PATT） devices based on group III-V semiconductors such as wurtzite （Wz） GaN, GaAs and InP have been carried ...Large-signal （L-S） characterizations of double-drift region （DDR） impact avalanche transit time （IM- PATT） devices based on group III-V semiconductors such as wurtzite （Wz） GaN, GaAs and InP have been carried out at both millimeter-wave （mm-wave） and terahertz （THz） frequency bands. A L-S simulation technique based on a non-sinusoidal voltage excitation （NSVE） model developed by the authors has been used to obtain the high frequency properties of the above mentioned devices. The effect of band-to-band tunneling on the L-S properties of the device at different mm-wave and THz frequencies are also investigated. Similar studies are also carried out for DDR IMPATTs based on the most popular semiconductor material, i.e. Si, for the sake of comparison. A compara- tive study of the devices based on conventional semiconductor materials （i.e. GaAs, InP and Si） with those based on Wz-GaN shows significantly better performance capabilities of the latter at both mm-wave and THz frequencies.展开更多
Ionization rate coefficients and saturation drift velocities for electrons and holes are the vital material parameters in determining the performance of an IMPATT diode.We have performed a sensitivity analysis of the ...Ionization rate coefficients and saturation drift velocities for electrons and holes are the vital material parameters in determining the performance of an IMPATT diode.We have performed a sensitivity analysis of the millimeter wave characteristics of 4H-SiC and 6H-SiC IMPATT diodes with reference to the above mentioned material data and an operating frequency of 220 GHz.The effect of a small variation in the ionization rate and drift velocity on the device characteristics like break down voltage,efficiency,noise measure and power output has been presented here.展开更多
文摘This paper presents the simulation results of DC,small-signal and noise properties of GaP based Double Drift Region( DDR) Impact Avalanche Transit Time( IMPATT) diodes. In simulation study we have considered the flat DDR structures of IMPATT diode based on GaP,GaAs,Si and GaN( wurtzite,wz) material. The diodes are designed to operate at the millimeter window frequencies of 94 GHz and 220 GHz. The simulation results of these diodes reveal GaP is a promising material for IMPATT applications based on DDR structure with high break down voltage( V_B) as compared to Si and GaAs IMPATTs. It is also encouraging to worth note GaP base IMPATT diode shows a better output power density of 4. 9 × 10~9 W/m^2 as compared to Si and GaAs based IMPATT diode. But IMPATT diode based on GaN( wz) displays large values of break down voltage,efficiency and power density as compared to Si,GaAs and GaP IMPATTs.
文摘The silicon epitaxial wafter for X band double Read-type DDR IMPATT diodes has been fabricatedby normal-low pressure growth technique. The hyperabrupt impurity profile and very thin p-layer, n-layerwere achieved.
文摘The influence of self-heating on the millimeter-wave(mm-wave)and terahertz(THz)performance of double-drift region(DDR)impact avalanche transit time(IMPATT)sources based on silicon(Si)has been investigated in this paper.The dependences of static and large-signal parameters on junction temperature are estimated using a non-sinusoidal voltage excited(NSVE)large-signal simulation technique developed by the authors,which is based on the quantum-corrected drift-diffusion(QCDD)model.Linear variations of static parameters and non-linear variations of large-signal parameters with temperature have been observed.Analytical expressions representing the temperature dependences of static and large-signal parameters of the diodes are developed using linear and 2nd degree polynomial curve fitting techniques,which will be highly useful for optimizing the thermal design of the oscillators.Finally,the simulated results are found to be in close agreement with the experimentally measured data.
文摘Simulation studies are made on the large-signal RF performance and avalanche noise properties ofhet- erojunction double-drift region （DDR） impact avalanche transit time （IMPATT） diodes based on AlxGal-xN/GaN material system designed to operate at 1.0 THz frequency. Two different heterojunction DDR structures such as n-Al0.4Ga0.6N/p-GaN and n-GaN/p-Al0.4Ga0.6N are proposed in this study. The large-signal output power, con- version efficiency and noise properties of the heterojunction DDR IMPATTs are compared with homojunction DDR IMPATT devices based on GaN and Al0.4Ga0.6N. The results show that the n-Al0.4Ga0.6N/p-GaN heterojunction DDR device not only surpasses the n-GaN/p-Al0.4Ga0.6N DDR device but also homojunction DDR IMPATTs based on GaN and Al0.4Ga0.6N as regards large-signal conversion efficiency, power output and avalanche noise performance at 1.0 THz.
文摘Large-signal （L-S） characterizations of double-drift region （DDR） impact avalanche transit time （IM- PATT） devices based on group III-V semiconductors such as wurtzite （Wz） GaN, GaAs and InP have been carried out at both millimeter-wave （mm-wave） and terahertz （THz） frequency bands. A L-S simulation technique based on a non-sinusoidal voltage excitation （NSVE） model developed by the authors has been used to obtain the high frequency properties of the above mentioned devices. The effect of band-to-band tunneling on the L-S properties of the device at different mm-wave and THz frequencies are also investigated. Similar studies are also carried out for DDR IMPATTs based on the most popular semiconductor material, i.e. Si, for the sake of comparison. A compara- tive study of the devices based on conventional semiconductor materials （i.e. GaAs, InP and Si） with those based on Wz-GaN shows significantly better performance capabilities of the latter at both mm-wave and THz frequencies.
文摘Ionization rate coefficients and saturation drift velocities for electrons and holes are the vital material parameters in determining the performance of an IMPATT diode.We have performed a sensitivity analysis of the millimeter wave characteristics of 4H-SiC and 6H-SiC IMPATT diodes with reference to the above mentioned material data and an operating frequency of 220 GHz.The effect of a small variation in the ionization rate and drift velocity on the device characteristics like break down voltage,efficiency,noise measure and power output has been presented here.
