An interval Kalman filter (IKF) algorithm based on the interval conditional expectation is applied to an integrated global positioning system/inertial navigation system (GPS/INS). Because the IKF algorithm is applica...An interval Kalman filter (IKF) algorithm based on the interval conditional expectation is applied to an integrated global positioning system/inertial navigation system (GPS/INS). Because the IKF algorithm is applicable only to linear interval systems, the extended interval Kalman filter (EIKF) algorithm for non linear integrated systems is developed. A high dynamic aircraft trajectory is designed to test the algorithm developed. The results of computer simulation indicate that the EIKF algorithm is consistent with the traditional SKF scheme, and is also effective for uncertain non linear integrated system.展开更多
To the editor:Insomnia disorder has a serious and widespread detrimental effect on humans with comorbidity with other mental or physical health problems.In recent years,noninvasive brain stimulation(NIBS)techniques,es...To the editor:Insomnia disorder has a serious and widespread detrimental effect on humans with comorbidity with other mental or physical health problems.In recent years,noninvasive brain stimulation(NIBS)techniques,especially transcranial magnetic stimulation(TMS)and transcranial electrical stimulation,have been increasingly used for the treatment of brain diseases,including insomnia disorder.展开更多
InSe has emerged as a promising candidate for next-generation electronics due to its predicted ultrahigh electrical performance.However,the efficacy of the InSe transistor in meeting application requirements is hinder...InSe has emerged as a promising candidate for next-generation electronics due to its predicted ultrahigh electrical performance.However,the efficacy of the InSe transistor in meeting application requirements is hindered due to its sensitivity to interfaces.In this study,we have achieved notable enhancement in the electrical performance of InSe transistors through interface engineering.We engineered an InSe/h-BN heterostructure,effectively suppressing dielectric layer-induced scattering.Additionally,we successfully established excellent metal-semiconductor contacts using graphene ribbons as a buffer layer.Through a methodical approach to interface engineering,our graphene/InSe/h-BN transistor demonstrates impressive on-state current,field-effect mobility,and on/off ratio at room temperature,reaching values as high as 1.1 mA/μm,904 cm^(2)·V^(-1)·s^(-1),and>10~6,respectively.Theoretical computations corroborate that the graphene/InSe heterostructure shows significant interlayer charge transfer and weak interlayer interaction,contributing to the enhanced performance of InSe transistors.This research offers a comprehensive strategy to elevate the electrical performance of InSe transistors,paving the way for their utilization in future electronic applications.展开更多
文摘An interval Kalman filter (IKF) algorithm based on the interval conditional expectation is applied to an integrated global positioning system/inertial navigation system (GPS/INS). Because the IKF algorithm is applicable only to linear interval systems, the extended interval Kalman filter (EIKF) algorithm for non linear integrated systems is developed. A high dynamic aircraft trajectory is designed to test the algorithm developed. The results of computer simulation indicate that the EIKF algorithm is consistent with the traditional SKF scheme, and is also effective for uncertain non linear integrated system.
基金National Natural Science Foundation of China(52272006,52371193,52001231)Shanghai Academic/Technology Research Leader(23XD1421200)+3 种基金Oriental Scholars of Shanghai Universities(TP2022122)Space Application System of China Manned Space Program,Shanghai Rising-star Program(23QA1403900)Chenguang Program supported by Shanghai Education Development Foundation&Shanghai Municipal Education CommissionOpen Research Fund of Key Laboratory of Polar Materials and Devices,Ministry of Education。
基金the National Natural Science Foundation of China(81871426,81871430,82260359,U22A20303)Hebei Provincial Natural Science Foundation(H2020206263,H2020206625)STI2030-Major Projects Program(2022ZD0214500).
文摘To the editor:Insomnia disorder has a serious and widespread detrimental effect on humans with comorbidity with other mental or physical health problems.In recent years,noninvasive brain stimulation(NIBS)techniques,especially transcranial magnetic stimulation(TMS)and transcranial electrical stimulation,have been increasingly used for the treatment of brain diseases,including insomnia disorder.
基金the support of the National Natural Science Foundation of China (Grant No.62204030)supported in part by the National Natural Science Foundation of China (Grant Nos.62122036,62034004,61921005,61974176,and 12074176)the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No.XDB44000000)。
文摘InSe has emerged as a promising candidate for next-generation electronics due to its predicted ultrahigh electrical performance.However,the efficacy of the InSe transistor in meeting application requirements is hindered due to its sensitivity to interfaces.In this study,we have achieved notable enhancement in the electrical performance of InSe transistors through interface engineering.We engineered an InSe/h-BN heterostructure,effectively suppressing dielectric layer-induced scattering.Additionally,we successfully established excellent metal-semiconductor contacts using graphene ribbons as a buffer layer.Through a methodical approach to interface engineering,our graphene/InSe/h-BN transistor demonstrates impressive on-state current,field-effect mobility,and on/off ratio at room temperature,reaching values as high as 1.1 mA/μm,904 cm^(2)·V^(-1)·s^(-1),and>10~6,respectively.Theoretical computations corroborate that the graphene/InSe heterostructure shows significant interlayer charge transfer and weak interlayer interaction,contributing to the enhanced performance of InSe transistors.This research offers a comprehensive strategy to elevate the electrical performance of InSe transistors,paving the way for their utilization in future electronic applications.
