Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing

This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing （QWI） for the first time in China's Mainland. The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA. The device can work at available channels with SMSR over 35dB.

An Integratable Distributed Bragg Reflector Laser by Low-Energy Ion Implantation Induced Quantum Well Intermixing

An integratable distributed Bragg reflector laser is fabricated by low energy ion implantation induced quantum well intermixing.A 4 6nm quasi continuous wavelength tuning range is achieved by controlling phase current and grating current simultaneously,and side mode suppression ratio maintains over 30dB throughout the tuning range except a few mode jump points.

Quantum Well Intermixing of InGaAsP QWs by Impurity Free Vacancy Diffusion Using SiO_2 Encapsulation

Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD) using SiO 2 encapsulation is reported.A maximum band gap wavelength blue shift as large as 200nm is realized.Furthermore,an FP laser blue shifted 21nm by QWI is fabricated with characteristics comparable with the as grown one.

Wavelength Tuning in Two-Section Distributed Bragg Reflector Laser by Selective Intermixing of InGaAsP-InGaAsP Quantum Well Structure

The two-section tunable ridge waveguide distribu ted Bragg reflector (DBR) laser fabricated by the selective intermixing of an InGaAsP-InGaAsP quantum well structure is presented.The threshold current of the laser is 51mA.The tunable range of the laser is 4.6nm,and the side mode suppress ion ratio (SMSR) is 40dB.

Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si-Si_(3)N_(4) dielectric layer

The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers,Si-Si_(3)N_(4)composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window.Si with a thickness of 100 nm and Si_(3)N_(4)with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source,respectively.Compared with traditional Si impurity induced quantum well intermixing,this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 ℃ and annealing time of 10 min.Under this annealing condition,the wavelength of the gain luminescence region basically does not shift to short wavelength,and the surface morphology of the whole epitaxial wafer remains fine after annealing.The application of this process condition can reduce the difficulty of production and save cost,which provides an effective method for upcoming fabrication.

Plasma-enhanced Chemical Vapordeposition SiO_2 Film after Ion Implantation Induces Quantum Well Intermixing

A method of QWI （ quantum well intermixing） realizing through plasma-enhanced chemical vapordepositiom （PECVD） SiO2 film following ion implantation was investigated. PECVD 200 mn SiO2 film after 160 keV phosphorus（P） ion implantation was performed to induce InP-based multiple-quantum-well （MQW） laser structural intermixing, annealing process was carried out at 780 ℃ for 30 seconds under N2 flue, the blue shift ofphotoluminescenee （PL） peak related to implanted dose ： 1 × 10^11, 1 × 10^12, 1×10^13 ,3 × 10^13 , 7× 10^13 ion/ cm^2 is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. Under the same conditions, by comparing the blue shift of PL peak with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects in the implanting layers generated by ion implantation are much more than those in SiO2 film. So, the blue shift results mainly from ion implantation. However, SiO2 film also may promote the quantum well intermixing.

InGaAsP/InP Double Quantum Well Intermixing Induced by Phosphorus Ion Implantation

A quantum well intermixing（QW1） investigation on double quantum well（DQW） structure with two different emitting wavelength caused by phosphorus ion implantation and following rapid thermal annealing （RTA） was carried out by means of photoluminescence（PL）. The ion implantation was performed at the energy of 120 keV with the dose ranging from 1 × 10^11cm^-2 to 1× 10^14cm^-2. The RTA was performed at the temperature of 700 ℃ for 30 s under pure nitrogen protection. The PL measurement implied that the band gap blue-shift from the upper well increases with the ion dose faster than that from lower well and the PL peaks from both QWs remained well separated under the lower dose implantation（-1 × 10^11cm^-2） indicating that the implant vacancy distribution affects the QWl. When the ion dose is over - 1 × 10^12cm^-2, the band gap blue-shift from both wells increases with the ion dose and finally the two peaks merge together as one peak indicating the ion implantation caused a total intermixing of both quantum wells.

Monolithic integration of electroabsorption modulators and tunnel injection distributed feedback lasers using quantum well intermixing

Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been mono-lithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method. Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.

Zn杂质诱导GaInP/AlGaInP红光半导体激光器量子阱混杂的研究

在GaAs基GaInP/AlGaInP单量子阱结构外延片上分别使用磁控溅射设备生长ZnO薄膜和等离子增强化学气相沉积设备生长SiO2薄膜,以ZnO介质层作为Zn杂质诱导源,采用固态扩Zn的方式对激光器进行选择性区域诱导以制备非吸收窗口来提高器件的腔面光学灾变损伤阈值,从而提高半导体激光器的输出功率和长期可靠性。在580~680℃、20~60 min退火条件下对Zn杂质诱导量子阱混杂展开研究,实验发现,ZnO/SiO2或ZnO/Si3N4复合介质层的采用比单一Zn介质层的杂质诱导蓝移量大,且在680℃、30 min的条件下获得了最大55 nm的蓝移量。分析结果表明,介质层所施加的压应变会将外延片表面GaAs层中Ga原子析出,促使Zn原子进入外延层中以诱导量子阱混杂。通过测量光致发光光谱发现发光强度并没有明显下降,可为后期器件制作提供借鉴。

热处理强化铝灰-磷石膏-钢渣粉稳定钢渣-碎石互配骨料力学性能

高速发展的规模型路基建设可消纳大宗工业固废,为此,试验利用大宗工业固废磷石膏(PG)、热闷钢渣(HBSS)、铝灰(AD)、硅酸盐水泥(PC)、天然碎石(NA)开发制备了复合水稳层材料。将PG和AD进行热处理改性,同时除去环境危害。再用改性后的PG-HBSS-AD-PC复合胶凝灰浆经过优化的HBSS-NA互配骨料。结果表明,用细粒HBSS部分代替碎石,可通过增加试件密实度优化水稳层的骨料架构。160℃处理后的PG与900℃处理后的AD加入PC后,通过CaSO_(4)·0.5H_(2)O硬化、水化铝酸钙(C-A-H)及钙矾石(AFt)的生成能进一步增强水稳层力学性能,固废利用率高。

Simple Approach on Intermixing Solar and Wind Energy and Minimizing Their Intermittent Effect

Renewable energy resources especially wind and solar energy are emerging as the modern power sources to electrify remote areas. The main reason behind their emergence is due to their environment-friendly behavior,unlimited availability and short period for replenishment over nonrenewable energy resources. Renewable energy resources are much better than nonrenewable energy resources, but the intermittency in renewable energy resources degrades the system performance. In order to overcome the intermittency, multiple hybrid system techniques were proposed in literature that can achieve suitable results but have disadvantages of complicated control structures and high implementation cost. Considering aforementioned shortcomings, a simple balancing approach is proposed to intermix solar and wind energy together so as to utilize the available energy from both sources at a given time.It is very common that solar farms are the dominating source of energy in daytime and summer, while wind farms are the dominating source of energy at night and in winter. The proposed approach delivers maximum possible power to the load by combining dominating and non-dominating resources all the time, hence mitigating the intermittency of individual resources. Compared with other approaches, the proposed approach offers key benefits with redundancy, simple design and low cost, which can be analyzed from simulation results.

Spatial control based quantum well intermixing in InP/InGaAsP structures using ICP

This paper presents a new method based on spatial controlling in quantum well intermixing in InP/InGaAsP structures using ICP technology.The degree of bandgap energy shift in the same wafer can be controlled flexibly using masks with different duty ratios.With an optimal condition including ICP-RIE etching depth, SiO_2 deposition,and RTA process,five different degrees of blue-shift with maximum of 75 nm were obtained in the same sample.The result shows that our method is an effective way to fabricate monolithic integration devices, especially in multi-bandgap structures.

Van der Waals interfacial bonding and intermixing in GeTe-Sb2Te3-based superlattices

Interfacial phase change memory （iPCM） based on GeTe and Sb2Te3 superlattices （SLs） is an emerging contender for non-volatile data storage applications. A detailed knowledge of the atomic structure of these materials is crucial for further development of SLs and for a better understanding of the resistivity switching characteristics of iPCM devices. In this work, crystalline GeTe-Sb2TeB- based SLs, produced by pulsed laser deposition onto a Si（111） substrate at temperatures lower than in previous studies, are analyzed by advanced scanning transmission electron microscopy. The results reveal the formation of Ge-rich Ge（x＋y）Sb（2-y）Tez building blocks with specific numbers of ordered Ge cation layers （between I and 5） and disordered cation layers （4） for z = 6-10, as well as intermixed cation layers for z = 5, within the SLs. The G Ge（x＋y）Sb（2-y）Tez units are separated from the Sb2Te3 building blocks by van der Waals gaps. In particular, the interlayer bonding is promoted by the formation of outermost cation layers consisting of intermixed GeSb within the building blocks adjacent to the van der Waals gaps. The Ge（x＋y）Sb（2-y）Tez units with z 〉 5 retain metastable crystal structures with two-dimensional bonding within the SLs. The present study shed new light on the possible configurations of the building units that can be formed during the synthesis of GeTe-Sb2Te3-based iPCM materials. In addition, a possible switching mechanism active in iPCM materials is discussed.

Wavelength Tuning in the Two-Section Distributed Bragg Reflector Laser Fabricatedby Quantum-Well Intermixing

The two-section tunable ridge waveguide distributed Bragg reflector (DBR) lasers fabricated by strained In xGa1-xAsyP1-y The threshold current of the laser is 51mA. The tunable range of the laser is 3.2nm and the side mode suppression ratio (SMSR) is more than 38dB.

Design optimized intermixed phase by tuning polymer-fullerene intercalation for free charge generation

The inte rmixed phase is important in effective charge separation due to the formation of cascaded energy landscape between intermixed phase and pure phases in polymer/fullerene solar cells.However,the quantitative relationship between the charge separation and the content of intermixed phase has not been investigated clearly so far.Here,we proposed to tune the content of the polymer/PC71BM intermixed phase by cha nging the polymer solution conformatio n.Poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene](PBTTT)and PC71 BM was selected as a model system.The organization of the PBTTT in solution promotes the formation of ordered aggregates as aging time increases,the interdigitation of side-chains restricts the intercalation of PC71 BM.Therefore,the intermixed phase formed by intercalation PC71 BM to PBTTT side chain can be controlled.When the aging time increasing from 0 to 80 min,the extent of inte rcalation gradually from almost complete intercalated phase to almost non-intercalated.As the content of intercalated phase is about 11%,the charge dissociation is most efficie nt and short circuit current(Jsc)increased from 1.60 mA/cm2 to 4.94 mA/cm2,leading to optimized device performance.

水泥基混杂自修复微胶囊的二次修复特性与机理

以水泥基混杂微胶囊为研究对象,采用环扫电镜(ESEM)、激光粒度分布仪(LA)、激光共聚焦显微镜(LSM)分别表征其微观形貌、颗粒特性和修复特征,采用强度恢复率、孔结构分析水泥基混杂微胶囊的二次修复能力。结果表明:缓释微胶囊囊壁孔洞分布均匀,具有缓慢释放和多次释放特点;普通微胶囊表面粗糙易破裂,具有快速释放和破裂释放特点。水泥基混杂微胶囊一次强度恢复率相比单掺缓释微胶囊提升28.72%,二次强度恢复率相比单掺普通微胶囊提升252.34%。水泥基混杂微胶囊具备快速修复能力且可以实现二次修复,二次修复主要是缓释微胶囊发挥作用。

Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser

Output power and reliability are the most important characteristic parameters of semiconductor lasers.However,catas-trophic optical damage(COD),which usually occurs on the cavity surface,will seriously damage the further improvement of the output power and affect the reliability.To improve the anti-optical disaster ability of the cavity surface,a non-absorption window(NAW)is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mix-ing(QWI)induced by impurity-free vacancy.Both the principle and the process of point defect diffusion are described in detail in this paper.We also studied the effects of annealing temperature,annealing time,and the thickness of SiO_(2) film on the quan-tum well mixing in a semiconductor laser with a primary epitaxial structure,which is distinct from the previous structures.We found that when compared with the complete epitaxial structure,the blue shift of the semiconductor laser with the primary epi-taxial structure is larger under the same conditions.To obtain the appropriate blue shift window,the primary epitaxial struc-ture can use a lower annealing temperature and shorter annealing time.In addition,the process is less expensive.We also pro-vide references for upcoming device fabrication.

多变量Si杂质诱导InGaAs/AlGaAs量子阱混杂研究

腔面光学灾变损伤是导致高功率量子阱半导体激光器阈值输出功率受限制的关键因素。通过量子阱混杂技术调整半导体激光器腔面局部区域处有源区材料的带隙宽度,形成对输出光透明的非吸收窗口,可提高激光器输出功率。本文基于InGaAs/AlGaAs高功率量子阱半导体激光器初级外延片,以外延Si单晶层作为扩散源,结合快速热退火方法开展了杂质诱导量子阱混杂研究。探索了介质层生长温度、介质层厚度、热处理温度、热处理时间等条件对混杂效果的影响。结果表明,50 nm的650℃低温外延Si介质层并结合875℃/90 s快速热退火处理可在保证光致发光谱的同时获得约57 nm的波长蓝移量。能谱测试发现,Si杂质扩散到初级外延片上的波导层是导致量子阱混杂效果显著的关键。

纳米硼对Al/CuFe_(2)O_(4)@NC复合物点火和燃烧反应特性的影响

为实现纳米铝热剂复合物反应活性的调节,采用静电喷雾技术制备了一系列不同Al/B摩尔比的Al/B/CuFe_(2)O_(4)@NC复合物,并通过XRD、FT-IR、SEM、DSC、激光点火和燃烧实验对复合物的相组成、结构和铝热反应特性进行系统表征分析。DSC结果表明,纳米B有益于增加复合物的热释放能和提高其热稳定性,Al/B摩尔比为5/5工况下的热释放能由1138.5增至1426.9J/g,铝热反应温度随B含量的增加而提高。点火和燃烧实验发现,静电喷雾能显著增强复合物的反应活性,使其点火延迟由16ms降至10ms,燃速由3.34增至6.01cm/s;通过改变Al/B摩尔比,复合物的燃速、燃烧室压力增速和静电火花感度分别在6.01~36.36cm/s、0.05~0.17MPa/ms和61.25~11.25mJ之间可调,而当Al/B摩尔比小于5/5时,其点火和燃烧困难,表明B粉是调节复合物活性的有效添加剂。

儿童神经节细胞瘤及神经节神经母细胞瘤混杂型的治疗经验

目的总结治疗儿童神经节细胞瘤及神经节神经母细胞瘤混杂型的经验。方法回顾性分析2009年5月—2019年11月在广州市妇女儿童医疗中心诊治的神经节细胞瘤及神经节神经母细胞瘤混杂型病例。采用Mann-Whitney U检验、卡方检验和费希尔精确检验进行比较各指标,采用Kaplan-Meier进行生存分析、Log-rank比较生存曲线。结果本研究共纳入88例患儿,中位年龄为54.7(13.7~192.0)个月。肿瘤原发于颈部(2例)、胸部(54例)、胸腹(2例)、腹部(24例)、盆腔(6例)。INSS分期1期、2A、2B、3期、4期分别为58例、9例、10例、9例、2例。所有患儿均接受手术切除,术中失血量中位数为50(2~4700)mL,术中输注红细胞中位数为1.(0~7)单位、输注血浆中位数为100(0~1700)mL。5例(5.7%)患儿发生了并发症。20例(22.7%)有肿瘤残留,其中11例肿瘤残留大于2cm,2例残留小于2cm,另外7例未记录具体残留组织大小。术后病理确诊神经节细胞瘤32例(36.4%),神经节神经母细胞瘤混杂型56例(63.6%)。神经节细胞瘤患儿发病年龄较神经节神经母细胞瘤混杂型患儿大[69.1(47.4~88.3)个月vs 49.6(32.1~68.9)个月,P=0.005]。中位随访时间为23.5(0.0~89.0)个月,2例(2.3%)复发、3例(3.4%)死亡、9例(10.2%)失访。术后肿瘤残留对无事件生存率及总体生存率没有显著影响(P=0.691,P=0.128)。结论神经节细胞瘤及神经节神经母细胞瘤混杂型总体治疗效果良好,手术治疗安全有效,术后肿瘤残留对临床结局可能无显著影响。