A novel device, lateral PIN photodiode gated by transparent electrode （LPIN PD-GTE） fabricated on fully-depleted SOI film was proposed. ITO film was adopted in the device as gate electrode to reduce the light absorp...A novel device, lateral PIN photodiode gated by transparent electrode （LPIN PD-GTE） fabricated on fully-depleted SOI film was proposed. ITO film was adopted in the device as gate electrode to reduce the light absorption. Thin Si film was fully depleted under gate voltage to achieve low dark current and high photo4o-dark current ratio. The model of gate voltage was obtained and the numerical simulations were presented by ATLAS. Current-voltage characteristics of LPIN PD-GTE obtained in dark （dark current） and under 570 nm illumination （photo current） were studied to achieve the greatest photo-to-dark current ratio for active channel length from 2 to 12 /am. The results show that the photo-to-dark current ratio is 2.0×10^7, with dark current of around 5×10^-4 pA under VGK=0.6 V, PrN=5 mW/cm2, for a total area of 10μm×10μm in fully depleted SOI technology. Thus, the LPIN PD-GTE can be suitable for high-grade photoelectric systems such as blue DVD.展开更多
3-Hydroxy-1-propanesulfonic acid(HPSA)was applied as a modification layer on poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)film via spin-coating,resulting in a massive boost of the conductivity of...3-Hydroxy-1-propanesulfonic acid(HPSA)was applied as a modification layer on poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)film via spin-coating,resulting in a massive boost of the conductivity of PEDOT:PSS film,and thus the as-formed PEDOT:PSS/HPSA bilayer film was successfully used as a transparent electrode for ITO-free polymer solar cells(PSCs).Under the optimized concentration of HPSA(0.2 mol L^(-1)),the PEDOT:PSS/HPSA bilayer film has a conductivity of 1020 S cm^(-1),which is improved by about 1400 times of the pristine PEDOT:PSS film(0.7 S cm^(-1)).The sheet resistance of the PEDOT:PSS/HPSA bilayer film was 98Ωsq^(-1),and its transparency in the visible range was over 80%.Both parameters are comparable to those of ITO,enabling its suitability as the transparent electrode.According to atomic force microscopy(AFM),UV-Vis and Raman spectroscopic measurements,the conductivity enhancement was resulted from the removal of PSS moiety by methanol solvent and HPSA-induced segregation of insulating PSS chains along with the conformation transition of the conductive PEDOT chains within PEDOT:PSS.Upon applying PEDOT:PSS/HPSA bilayer film as the transparent electrode substituting ITO,the ITO-free polymer solar cells(PSCs)based on poly[N-9″-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)]:[6,6]-phenyl C71-butyric acid methyl ester(PC_(71)BM)(PCDTBT:PC_(71)BM)active layer exhibited a power conversion efficiency(PCE)of 5.52%,which is comparable to that of the traditional ITO-based devices.展开更多
基金Project(61040061) supported by the National Natural Science Foundation of ChinaProject supported by Hunan Provincial Innovation Foundation for Postgraduate Students,China
文摘A novel device, lateral PIN photodiode gated by transparent electrode （LPIN PD-GTE） fabricated on fully-depleted SOI film was proposed. ITO film was adopted in the device as gate electrode to reduce the light absorption. Thin Si film was fully depleted under gate voltage to achieve low dark current and high photo4o-dark current ratio. The model of gate voltage was obtained and the numerical simulations were presented by ATLAS. Current-voltage characteristics of LPIN PD-GTE obtained in dark （dark current） and under 570 nm illumination （photo current） were studied to achieve the greatest photo-to-dark current ratio for active channel length from 2 to 12 /am. The results show that the photo-to-dark current ratio is 2.0×10^7, with dark current of around 5×10^-4 pA under VGK=0.6 V, PrN=5 mW/cm2, for a total area of 10μm×10μm in fully depleted SOI technology. Thus, the LPIN PD-GTE can be suitable for high-grade photoelectric systems such as blue DVD.
基金supported by the National Key Research and Development Program of China (2017YFA0402800)the National Natural Science Foundation of China (51403005, 51572254, 11604279)+3 种基金the Major/Innovative Program of Development Foundation of Hefei Center for Physical Science and Technology (2016FXZY003)Key Technologies R&D Program of He’nan Province (172102210459)Foundation of He’nan Educational Committee (16A430027)Nanhu Scholars Program for Young Scholars of Xinyang Normal University
文摘3-Hydroxy-1-propanesulfonic acid(HPSA)was applied as a modification layer on poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)film via spin-coating,resulting in a massive boost of the conductivity of PEDOT:PSS film,and thus the as-formed PEDOT:PSS/HPSA bilayer film was successfully used as a transparent electrode for ITO-free polymer solar cells(PSCs).Under the optimized concentration of HPSA(0.2 mol L^(-1)),the PEDOT:PSS/HPSA bilayer film has a conductivity of 1020 S cm^(-1),which is improved by about 1400 times of the pristine PEDOT:PSS film(0.7 S cm^(-1)).The sheet resistance of the PEDOT:PSS/HPSA bilayer film was 98Ωsq^(-1),and its transparency in the visible range was over 80%.Both parameters are comparable to those of ITO,enabling its suitability as the transparent electrode.According to atomic force microscopy(AFM),UV-Vis and Raman spectroscopic measurements,the conductivity enhancement was resulted from the removal of PSS moiety by methanol solvent and HPSA-induced segregation of insulating PSS chains along with the conformation transition of the conductive PEDOT chains within PEDOT:PSS.Upon applying PEDOT:PSS/HPSA bilayer film as the transparent electrode substituting ITO,the ITO-free polymer solar cells(PSCs)based on poly[N-9″-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)]:[6,6]-phenyl C71-butyric acid methyl ester(PC_(71)BM)(PCDTBT:PC_(71)BM)active layer exhibited a power conversion efficiency(PCE)of 5.52%,which is comparable to that of the traditional ITO-based devices.
