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A Preliminary Study on DNA Mutation Induction of Maize Pollen Implanted by Low Energy N^+ Beam 被引量:3
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作者 程备久 阚显照 +1 位作者 朱苏文 李培金 《Plasma Science and Technology》 SCIE EI CAS CSCD 2001年第1期659-664,共6页
The maize pollens were implanted with seven different doses of 30 keV N+ beam respectively, The genomic DNA polymorphism from treated pollens were analyzed with 104 primers by using RAPD respectively. The results sho... The maize pollens were implanted with seven different doses of 30 keV N+ beam respectively, The genomic DNA polymorphism from treated pollens were analyzed with 104 primers by using RAPD respectively. The results showed that N^+ beam-induced mutation of maize pollens can result in the change of their DNA bases. The mutation is not properly random and its frequency increases with a rise in 30 keV N+ beam doses. It is conformed with A-G transformation, which is one of the most important factors in DNA bases induced by N+ beam. 展开更多
关键词 DNA A Preliminary study on DNA Mutation Induction of Maize Pollen implanted by Low Energy N BEAM
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Study on Hardness of Ion Implantation Layer
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作者 Xu Shiru, Qiu Chengferg, Zhang Qiaogen, Li Zhong Yang Zhigui Electronic Engineering Department of Xi’an Jiaotong University, Xi’an, China 《真空科学与技术学报》 EI CAS CSCD 1992年第Z1期183-186,共4页
The surface layer of beryllium, specimen, has been strengthened by ion implantation. Its microhardness was measured. The hardness of surface layer has been calculated from the microhardness. The experimental data of t... The surface layer of beryllium, specimen, has been strengthened by ion implantation. Its microhardness was measured. The hardness of surface layer has been calculated from the microhardness. The experimental data of the wear rate indirectly Confirmed the reasonableness of the result of calculation. It is shown that the hardness of the surface layer strengthened, by ion implantation is nine times higher than that of beryllium itself. The relation between hardness and implantation dose was analysed and the best dose was obtained. 展开更多
关键词 RATE In study on Hardness of Ion implantation Layer
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