基于In Silicon模拟消化的北极虾DPP-Ⅳ抑制肽活性分析

北极虾具有很高的营养价值,在食品领域已引起越来越多的关注。对北极虾蛋白进行In Silicon模拟消化获得寡肽,通过PeptideRanker活性评分及理化性质分析,从中筛选出具有潜在生物活性的寡肽。使用ToxinPred分析和BIOPEP-UWM生物活性预测,发现部分寡肽具有二肽基肽酶-Ⅳ(dipeptidyl peptidase-Ⅳ,DPP-Ⅳ)抑制活性,最终确定WFP(一种三肽,Trp-Phe-Pro)具有最优的DPP-Ⅳ抑制活性肽。分子对接表明,WFP和DPP-Ⅳ能够形成稳定的复合物,其结合能为-6.93 kcal/mol,进一步研究表明,WFP通过与DPP-Ⅳ S1、S2、S3三个活性口袋中的9个氨基酸残基发生相互作用而抑制其活性。本研究为阐释北极虾营养价值及生物活性肽的开发提供了理论依据。

Fabrication of Through Micro-hole Arrays in Silicon Using Femtosecond Laser Irradiation and Selective Chemical Etching

We demonstrate a method of fabricating through micro-holes and micro-hole arrays in silicon using femtosecond laser irradiation and selective chemical etching. The micro-hole formation mechanism is identified as the chemical reaction of the femtosecond laser-induced structure change zone and hydrofluoric acid solution. The morphologies of the through micro-holes and micro-hole arrays are characterized by using scanning electronic microscopy, The effects of the pulse number on the depth and diameter of the holes are investigated. Honeycomb arrays of through micro-holes fabricated at different laser powers and pulse numbers are demonstrated.

The Splittings of p_± States in Infrared Spectra of Thermal Donors in Silicon

p -type CZ silicon crystals annealed at 450℃ have been investigated by low temperature infrared spectroscopy with high resolusion. It has been shown that the 2p± and 3p± bands of neutral thermal donors TD~° are all split into two bands, which have not been reported before. In addition, the concentrations ofindi- vidual TD_i and total TD have been derived from the heights of 2po bands, and the boron concentrations de- rived from that of 320 cm^(-1) band. The room temperature resistivities of samples have been evaluated and the comparison with practically measured resistivities have been made.

Lowering the energy consumption in silicon photonic devices and systems [Invited]

We review current silicon photonic devices and their performance in connection with energy consumption.Four critical issues are identified to lower energy consumption in devices and systems: reducing the influence of the thermo-optic effect, increasing the wall-plug efficiency of lasers on silicon, optimizing energy performance of modulators, and enhancing the sensitivity of photodetectors. Major conclusions are(1) Mach–Zehnder interferometer-based devices can achieve athermal performance without any extra energy consumption while microrings do not have an efficient passive athermal solution;(2) while direct bonded III–V-based Si lasers can meet system power requirement for now, hetero-epitaxial grown III–V quantum dot lasers are competitive and may be a better option for the future;(3) resonant modulators, especially coupling modulators, are promising for low-energy consumption operation even when the power to stabilize their operation is included;(4) benefiting from high sensitivity and low cost, Ge/Si avalanche photodiode is the most promising photodetector and can be used to effectively reduce the optical link power budget. These analyses and solutions will contribute to further lowering energy consumption to meet aggressive energy demands in future systems.

Backcoupling manipulation in silicon ring resonators

In this paper, we theoretically propose and experimentally demonstrate the manipulation of a novel degree of freedom in ring resonators, which is the coupling from the clockwise input to the counterclockwise propagating mode(and vice versa). We name this mechanism backcoupling, in contrast with the normal forward-coupling of a directional coupler. It is well known that internal reflections will cause peak splitting in a ring resonator. Our previous research demonstrated that the peak asymmetry will be strongly influenced by the backcoupling. Thus, it is worth manipulating the backcoupling in order to gain full control of a split resonance for the benefit of various resonance-splitting-based applications. While it is difficult to directly manipulate the backcoupling of a conventional directional coupler, here we design a circuit explicitly for manipulating the backcoupling. It can be potentially developed for applications such as single sideband filter, resonance splitting elimination, Fano resonance, and ultrahigh-Q and finesse.

All-optical switching in silicon photonic waveguides with an epsilon-near-zero resonant cavity [Invited]

Strong nonlinearity of plasmonic metamaterials can be designed near their effective plasma frequency in the epsilon-near-zero(ENZ) regime. We explore the realization of an all-optical modulator based on the Au nonlinearity using an ENZ cavity formed by a few Au nanorods inside a Si photonic waveguide. The resulting modulator has robust performance with a modulation depth of about 30 dB/μm and loss less than 0.8 dB for switching energies below 600 fJ. The modulator provides a double advantage of high mode transmission and strong nonlinearity enhancement in the few-nanorod-based design.

Electrical nonlinearity in silicon modulators based on reversed PN junctions

The electrical nonlinearity of silicon modulators based on reversed PN junctions was found to severely limit the linearity of the modulators.This effect,however,was inadvertently neglected in previous studies.Considering the electrical nonlinearity in simulation,a 32.2 dB degradation in the CDR3(i.e.,the suppression ratio between the fundamental signal and intermodulation distortion)of the modulator was observed at a modulation speed of 12 GHz,and the spurious free dynamic range was simultaneously degraded by 17.4 dB.It was also found that the linearity of the silicon modulator could be improved by reducing the series resistance of the PN junction.The frequency dependence of the linearity due to the electrical nonlinearity was also investigated.