In this study, In<sub>2</sub>S<sub>3</sub> thin films have been deposited on ITO and fluorine-tinoxide FTO coated glass substrates by single source vacuum thermal evaporation annealed in vacuum...In this study, In<sub>2</sub>S<sub>3</sub> thin films have been deposited on ITO and fluorine-tinoxide FTO coated glass substrates by single source vacuum thermal evaporation annealed in vacuum a 300°C - 400°C for 1 h. The samples structure was characterized by X-ray diffraction, revealing the quadratic structure of In<sub>2</sub>S<sub>3</sub> and the crystallinity depends on the temperature of annealing and nature of substrate. The various structural parameters, such as, crystalline size, dislocation density, strain and texture coefficient were calculated. The optical properties show that the refractive index dispersion data obeyed the single oscillator of the Wemple-DiDomenico model. By using this model, the dispersion parameters and the high-frequency dielectric constant were determined. The Hall Effect has been studied at room temperature. The Hall voltages, the Hall coefficient (RH) and mobility (μH) have been measured at different magnetic and electric fields. The films show n-type behavior irrespective of temperature and composition.展开更多
Ag- and Sn-doped In2S3 thin films were deposited on glass substrates using the thermal evaporation technique. The doping was realized by thermal diffusion. The influences of Ag and Sn impurities on the electrical, str...Ag- and Sn-doped In2S3 thin films were deposited on glass substrates using the thermal evaporation technique. The doping was realized by thermal diffusion. The influences of Ag and Sn impurities on the electrical, structural, morphological, and optical properties of the In2S3 films were investigated. In all deposited samples, the x-ray diffraction spectra revealed the formation of cubic In2S3 phase. A significant increase in the crystallite size was observed after Ag doping,while the doping of Sn slightly decreased the crystallite size. The x-ray photoelectron spectroscopy verified the diffusion of Ag and Sn into the In2S3 films after annealing. The optical study illustrated that Ag doping resulted in a reduction of the optical band gap while Sn doping led to a widening of the gap. Optical properties were investigated to determine the optical constants. Besides, it was found that the resistivity decreases significantly either after Ag or Sn incorporation. The study demonstrates that the Sn-doped In2S3 thin films are more suitable for buffer layer application in solar cells than the Ag-doped In2S3 thin films.展开更多
采用真空热蒸发法制备SnS与In_2S_3薄膜,研究在不同热退火温度下对SnS与In_2S_3薄膜的物相和光学特性的影响。退火处理后的SnS薄膜的吸收边位置大约在1.5 e V,In_2S_3薄膜有较高的透过率,可以满足太阳电池的光学性能要求。制备得到结构...采用真空热蒸发法制备SnS与In_2S_3薄膜,研究在不同热退火温度下对SnS与In_2S_3薄膜的物相和光学特性的影响。退火处理后的SnS薄膜的吸收边位置大约在1.5 e V,In_2S_3薄膜有较高的透过率,可以满足太阳电池的光学性能要求。制备得到结构为ITO/In_2S_3/SnS/In/Ag的异质结器件,并讨论退火温度对其整流特性的影响,当退火温度为300℃,器件整流特性最佳。展开更多
Indium sulfide （InzS3） thin films were prepared by chemical spray pyrolysis technique from solutions with different [S]/[In] ratios on glass substrates at a constant temperature of 250 ~C. Thin films were characteri...Indium sulfide （InzS3） thin films were prepared by chemical spray pyrolysis technique from solutions with different [S]/[In] ratios on glass substrates at a constant temperature of 250 ~C. Thin films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, atomic force microscopy （AFM）, energy disper- sive X-ray spectroscopy （EDS）, Raman spectroscopy and optical transmittance spectroscopy. All samples exhibit a polycrystalline structure with a preferential orientation along （0, 0, 12）. A good stoichiometry was attained for all samples. The morphology of thin film surfaces, as seen by SEM, was dense and no cracks or pinholes were ob- served. Raman spectroscopy analysis shows active modes belonging to j3-1naS3 phase. The optical transmittance in the visible range is higher than 60% and the band gap energy slightly increases with the sulfur to indium ratio, attaining a value of 2.63 eV for [S]/[In] ： 4.5.展开更多
文摘In this study, In<sub>2</sub>S<sub>3</sub> thin films have been deposited on ITO and fluorine-tinoxide FTO coated glass substrates by single source vacuum thermal evaporation annealed in vacuum a 300°C - 400°C for 1 h. The samples structure was characterized by X-ray diffraction, revealing the quadratic structure of In<sub>2</sub>S<sub>3</sub> and the crystallinity depends on the temperature of annealing and nature of substrate. The various structural parameters, such as, crystalline size, dislocation density, strain and texture coefficient were calculated. The optical properties show that the refractive index dispersion data obeyed the single oscillator of the Wemple-DiDomenico model. By using this model, the dispersion parameters and the high-frequency dielectric constant were determined. The Hall Effect has been studied at room temperature. The Hall voltages, the Hall coefficient (RH) and mobility (μH) have been measured at different magnetic and electric fields. The films show n-type behavior irrespective of temperature and composition.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61076063,61340051,and 61306120)the Natural Science Foundation of Fujian Province,China(Grant No.2014J05073)
文摘Ag- and Sn-doped In2S3 thin films were deposited on glass substrates using the thermal evaporation technique. The doping was realized by thermal diffusion. The influences of Ag and Sn impurities on the electrical, structural, morphological, and optical properties of the In2S3 films were investigated. In all deposited samples, the x-ray diffraction spectra revealed the formation of cubic In2S3 phase. A significant increase in the crystallite size was observed after Ag doping,while the doping of Sn slightly decreased the crystallite size. The x-ray photoelectron spectroscopy verified the diffusion of Ag and Sn into the In2S3 films after annealing. The optical study illustrated that Ag doping resulted in a reduction of the optical band gap while Sn doping led to a widening of the gap. Optical properties were investigated to determine the optical constants. Besides, it was found that the resistivity decreases significantly either after Ag or Sn incorporation. The study demonstrates that the Sn-doped In2S3 thin films are more suitable for buffer layer application in solar cells than the Ag-doped In2S3 thin films.
文摘采用真空热蒸发法制备SnS与In_2S_3薄膜,研究在不同热退火温度下对SnS与In_2S_3薄膜的物相和光学特性的影响。退火处理后的SnS薄膜的吸收边位置大约在1.5 e V,In_2S_3薄膜有较高的透过率,可以满足太阳电池的光学性能要求。制备得到结构为ITO/In_2S_3/SnS/In/Ag的异质结器件,并讨论退火温度对其整流特性的影响,当退火温度为300℃,器件整流特性最佳。
基金supported by the Generalitat valenciana through grant PROMETEUS 2009/2011the European Commission through NanoCIS project (FP7-PEOPLE-2010IRSES ref. 269279)
文摘Indium sulfide （InzS3） thin films were prepared by chemical spray pyrolysis technique from solutions with different [S]/[In] ratios on glass substrates at a constant temperature of 250 ~C. Thin films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, atomic force microscopy （AFM）, energy disper- sive X-ray spectroscopy （EDS）, Raman spectroscopy and optical transmittance spectroscopy. All samples exhibit a polycrystalline structure with a preferential orientation along （0, 0, 12）. A good stoichiometry was attained for all samples. The morphology of thin film surfaces, as seen by SEM, was dense and no cracks or pinholes were ob- served. Raman spectroscopy analysis shows active modes belonging to j3-1naS3 phase. The optical transmittance in the visible range is higher than 60% and the band gap energy slightly increases with the sulfur to indium ratio, attaining a value of 2.63 eV for [S]/[In] ： 4.5.
