利用液滴外延法在GaAs(001)衬底表面制备InAs量子点,通过控制变量分别研究沉积速率、沉积量对In液滴在GaAs表面生长过程中的影响.使用原子力显微镜(Atomic Force Microscope,AFM)表征I⁃nAs纳米结构形貌,得出结论:(1)沉积速率主要通过影...利用液滴外延法在GaAs(001)衬底表面制备InAs量子点,通过控制变量分别研究沉积速率、沉积量对In液滴在GaAs表面生长过程中的影响.使用原子力显微镜(Atomic Force Microscope,AFM)表征I⁃nAs纳米结构形貌,得出结论:(1)沉积速率主要通过影响In液滴成核率来控制液滴的密度,即随着沉积速率的增大,In原子在衬底表面的成核率增加,InAs量子点密度增加,实验符合生长动力学经典成核理论.(2)沉积量的改变主要影响液滴的熟化过程,即随着沉积量的增大,可参与生长的活跃的In原子增加,促进了液滴熟化,使得扩散坍塌的原子数量增加,导致在InAs纳米结构中出现多量子点现象.展开更多
Here we report 1.3μm electrical injection lasers based on InAs/GaAs quantum dots(QDs)grown on a GaAs substrate,which can steadily work at 110-℃without visible degradation.The QD structure is designed by applying the...Here we report 1.3μm electrical injection lasers based on InAs/GaAs quantum dots(QDs)grown on a GaAs substrate,which can steadily work at 110-℃without visible degradation.The QD structure is designed by applying the Stranski-Krastanow growth mode in solid source molecular beam epitaxy.The density of InAs QDs in the active region is increased from 3.8×10^(10)cm^(-2)to 5.9×10^(10)cm^(-2).As regards laser performance,the maximum output power of devices with lowdensity QDs as the active region is 65 m W at room temperature,and that of devices with the high-density QDs is 103 mW.Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110-℃.展开更多
报道了320×256元InAs/GaSb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ...报道了320×256元InAs/GaSb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ML InAs/7 ML GaSb和10 ML InAs/10 ML GaSb.焦平面阵列像元中心距为30μm.在77 K时测试,器件双色波段的50%响应截止波长分别为4.2μm和5.5μm,其中N-on-P器件平均峰值探测率达到6.0×10^(10) cmHz^(1/2)W^(-1),盲元率为8.6%;P-on-N器件平均峰值探测率达到2.3×10~9 cmHz^(1/2)W^(-1),盲元率为9.8%.红外焦平面偏压调节成像测试得到较为清晰的双波段成像.展开更多
文摘利用液滴外延法在GaAs(001)衬底表面制备InAs量子点,通过控制变量分别研究沉积速率、沉积量对In液滴在GaAs表面生长过程中的影响.使用原子力显微镜(Atomic Force Microscope,AFM)表征I⁃nAs纳米结构形貌,得出结论:(1)沉积速率主要通过影响In液滴成核率来控制液滴的密度,即随着沉积速率的增大,In原子在衬底表面的成核率增加,InAs量子点密度增加,实验符合生长动力学经典成核理论.(2)沉积量的改变主要影响液滴的熟化过程,即随着沉积量的增大,可参与生长的活跃的In原子增加,促进了液滴熟化,使得扩散坍塌的原子数量增加,导致在InAs纳米结构中出现多量子点现象.
基金the Science and Technology Program of Guangzhou(Grant No.202103030001)the KeyArea Research and Development Program of Guangdong Province(Grant No.2018B030329001)+8 种基金the National Natural Science Foundation of China(Grant Nos.62035017,61505196,and 62204238)the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032)the Major Program of the National Natural Science Foundation of China(Grant Nos.61790580 and 61790581)the Chinese Academy of Sciences and Changchun City Science and Technology Innovation Cooperation Project(Grant No.21SH06)Jincheng Key Research and Development Project(Grant No.20210209)the Key R&D Program of Shanxi Province(Grant No.202102030201004)the R&D Program of Guangdong Province(Grant Nos.2018B030329001 and2020B0303020001)Shenzhen Technology Research Project(Grant No.JSGG20201102145200001)the National Key Technologies R&D Program of China(Grant No.2018YFA0306100)。
文摘Here we report 1.3μm electrical injection lasers based on InAs/GaAs quantum dots(QDs)grown on a GaAs substrate,which can steadily work at 110-℃without visible degradation.The QD structure is designed by applying the Stranski-Krastanow growth mode in solid source molecular beam epitaxy.The density of InAs QDs in the active region is increased from 3.8×10^(10)cm^(-2)to 5.9×10^(10)cm^(-2).As regards laser performance,the maximum output power of devices with lowdensity QDs as the active region is 65 m W at room temperature,and that of devices with the high-density QDs is 103 mW.Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110-℃.
文摘报道了320×256元InAs/GaSb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ML InAs/7 ML GaSb和10 ML InAs/10 ML GaSb.焦平面阵列像元中心距为30μm.在77 K时测试,器件双色波段的50%响应截止波长分别为4.2μm和5.5μm,其中N-on-P器件平均峰值探测率达到6.0×10^(10) cmHz^(1/2)W^(-1),盲元率为8.6%;P-on-N器件平均峰值探测率达到2.3×10~9 cmHz^(1/2)W^(-1),盲元率为9.8%.红外焦平面偏压调节成像测试得到较为清晰的双波段成像.
