The electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron gases with different surface morphology has been investigated.Large electron mobility anisotropy is found for the sample with anisotropic mor...The electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron gases with different surface morphology has been investigated.Large electron mobility anisotropy is found for the sample with anisotropic morphology,which is mainly induced by the threading dislocations in the InAs layer.For the samples with isotropic morphology,the electron mobility is also anisotropic and could be attributed to the piezoelectric scattering.At low temperature (below transition temperature),the piezoelectric scattering is enhanced with the increase of temperature,leading to the increase of electron mobility anisotropy.At high temperature (above transition temperature),the phonon scattering becomes dominant.Because the phonon scattering is isotropic,the electron mobility anisotropy in all the samples would be reduced.Our results provide useful information for the comprehensive understanding of electron mobility anisotropy in the (Al,Ga)Sb/InAs system.展开更多
InAs1-xSbx with different compositions is grown by molecular beam epitaxy on （100）-oriented semi-insulating GaAs substrates. The increase of Sb content in the epilayer results in the deterioration of crystal quality...InAs1-xSbx with different compositions is grown by molecular beam epitaxy on （100）-oriented semi-insulating GaAs substrates. The increase of Sb content in the epilayer results in the deterioration of crystal quality and surface morphology. Hall measurements show that the carrier concentration increases with the composition of Sb. The electron mobility decreases initially, when Sb composition exceeds a certain value, and the mobility increases slightly. In this work, we emphasize the comparison of crystal quality, surface morphology and electrical properties of epilayers with different Sb compositions.展开更多
One-band effective mass model is used to simulation of electron gas properties in quantum well. We calculate of dispersion curves for first three subbands. Calculation results of Fermi energy, effective mass at Fermi ...One-band effective mass model is used to simulation of electron gas properties in quantum well. We calculate of dispersion curves for first three subbands. Calculation results of Fermi energy, effective mass at Fermi level as function of electron concentration are presented. The obtained results are good agreement with the experimental dates.展开更多
Compositionally undulating step-graded Al（Ga）InxAs （x = 0.05-0.52） buffers with the following InP layer were grown by metal-organic chemical vapor deposition （MOCVD） on （001） GaAs with a 15° miscut. The d...Compositionally undulating step-graded Al（Ga）InxAs （x = 0.05-0.52） buffers with the following InP layer were grown by metal-organic chemical vapor deposition （MOCVD） on （001） GaAs with a 15° miscut. The dislocation dis- tribution and tilts of the epilayers were examined using x-ray rocking curve and （004） reciprocal space maps （RSM） along two orthogonal （110） directions. The results suggested that such reverse-graded layers have different effects on a and 13 dislocations. A higher dislocation density was observed along the [ 110] direction and an epilayer tilt of - 1.43° was attained in the [1-10] direction when a reverse-graded layer strategy was employed. However, for conventional step-graded samples, the dislocation density is normally higher along the [1-10] direction.展开更多
In this report, the effect of temperature on the In As/Al Sb heterojunction and high-electron-mobility transistors（HEMTs） with a gate length of 2 μm are discussed comprehensively. The results indicate that device p...In this report, the effect of temperature on the In As/Al Sb heterojunction and high-electron-mobility transistors（HEMTs） with a gate length of 2 μm are discussed comprehensively. The results indicate that device performance is greatly improved at cryogenic temperatures. It is also observed that the device performance at 90 K is significantly improved with 27% lower gate leakage current, 12% higher maximum drain current, and 22.5% higher peak transconductance compared to 300 K. The temperature dependence of mobility and the two-dimensional electron gas concentration in the In As/Al Sb heterojunction for the temperature range 90 K-300 K is also investigated. The electron mobility at 90 K（42560 cm2/V·s）is 2.5 times higher than its value at 300 K（16911 cm^2/V·s） because of the weaker lattice vibration and the impurity ionization at cryogenic temperatures, which corresponds to a reduced scattering rate and higher mobility. We also noted that the two-dimensional electron gas concentration decreases slightly from 1.99 × 10^（12） cm^（-2） at 300 K to 1.7 × 10^（12） cm^（-2） at 90 K with a decrease in temperature due to the lower ionization at cryogenic temperature and the nearly constant ？Ec.展开更多
In this paper, the activities of components of Ga-Sb system have been calculated from its phase diagram by using computer program CABPD (calculating activities from binary phase diagrams) presented by us in previous p...In this paper, the activities of components of Ga-Sb system have been calculated from its phase diagram by using computer program CABPD (calculating activities from binary phase diagrams) presented by us in previous paper. The excess free energy of liquid solution can be expressed as: ΔG_m=X_(Ga)X_(Sb)(4392+17022X_(Sb)-15138X_(Sb)) J/mol In order to verify the reliability of calculated results, a discriminant has been proposed.展开更多
为实现2μm低发散角激光,提出在Ga Sb基半导体激光器中引入布拉格反射波导,利用光子带隙效应替代传统的全反射进行光场限制。研究了分布反馈反射镜(DBR)的厚度、对数、高低折射率DBR厚度比以及中心腔厚度等参数对激光器垂直远场发散角...为实现2μm低发散角激光,提出在Ga Sb基半导体激光器中引入布拉格反射波导,利用光子带隙效应替代传统的全反射进行光场限制。研究了分布反馈反射镜(DBR)的厚度、对数、高低折射率DBR厚度比以及中心腔厚度等参数对激光器垂直远场发散角和光限制因子的影响。结果表明:垂直远场发散角随单对DBR厚度的增加而减小;光限制因子与远场发散角都随拉格反射镜对数的增加而减小,随高低折射率DBR厚度比的减小而增大;随着中心层厚度的增大,光限制因子减小而远场发散角增大。最终在理论上优化设计出了一种双边布拉格反射波导结构的超低垂直发散角2μm Ga Sb基边发射半导体激光器,其垂直远场发散角可降低到10°以下。展开更多
The Ga Sb and In Sb binary systems were optimized using Lukas program. The thermodynamic properties and phase diagram data were evaluated by Thermo Calc package. R K polynomials and two sublattice models were used...The Ga Sb and In Sb binary systems were optimized using Lukas program. The thermodynamic properties and phase diagram data were evaluated by Thermo Calc package. R K polynomials and two sublattice models were used to describe the liquid and Ga x In 1- x Sb phases. A good description for the ternary system was obtained. It was proved to be better than those of previous work.展开更多
基金Supported by the National Natural Science Foundation of China(61534006,61974152,61505237,61505235,61404148,61176082)the National Key Research and Development Program of China(2016YFB0402403)the Youth Innovation Promotion Association,CAS(2016219)
基金supported by NSFC (Grants No. 11834013 and 12174383)support from the Youth Innovation Promotion Association, Chinese Academy of Sciences (No. 2021110)。
文摘The electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron gases with different surface morphology has been investigated.Large electron mobility anisotropy is found for the sample with anisotropic morphology,which is mainly induced by the threading dislocations in the InAs layer.For the samples with isotropic morphology,the electron mobility is also anisotropic and could be attributed to the piezoelectric scattering.At low temperature (below transition temperature),the piezoelectric scattering is enhanced with the increase of temperature,leading to the increase of electron mobility anisotropy.At high temperature (above transition temperature),the phonon scattering becomes dominant.Because the phonon scattering is isotropic,the electron mobility anisotropy in all the samples would be reduced.Our results provide useful information for the comprehensive understanding of electron mobility anisotropy in the (Al,Ga)Sb/InAs system.
基金Supported by the Aeronautical Science Foundation of China under Grant No 20132435the National High-Technology Research and Development Program of China under Grant No 2013AA031903+1 种基金the National Natural Science Foundation of China under Grant Nos 61106013 and 61275107the China Postdoctoral Science Foundation under Grant No 2014M560936
文摘InAs1-xSbx with different compositions is grown by molecular beam epitaxy on （100）-oriented semi-insulating GaAs substrates. The increase of Sb content in the epilayer results in the deterioration of crystal quality and surface morphology. Hall measurements show that the carrier concentration increases with the composition of Sb. The electron mobility decreases initially, when Sb composition exceeds a certain value, and the mobility increases slightly. In this work, we emphasize the comparison of crystal quality, surface morphology and electrical properties of epilayers with different Sb compositions.
文摘One-band effective mass model is used to simulation of electron gas properties in quantum well. We calculate of dispersion curves for first three subbands. Calculation results of Fermi energy, effective mass at Fermi level as function of electron concentration are presented. The obtained results are good agreement with the experimental dates.
基金Project supported by the National Natural Science Foundation of China(Grant No.61376065)
文摘Compositionally undulating step-graded Al（Ga）InxAs （x = 0.05-0.52） buffers with the following InP layer were grown by metal-organic chemical vapor deposition （MOCVD） on （001） GaAs with a 15° miscut. The dislocation dis- tribution and tilts of the epilayers were examined using x-ray rocking curve and （004） reciprocal space maps （RSM） along two orthogonal （110） directions. The results suggested that such reverse-graded layers have different effects on a and 13 dislocations. A higher dislocation density was observed along the [ 110] direction and an epilayer tilt of - 1.43° was attained in the [1-10] direction when a reverse-graded layer strategy was employed. However, for conventional step-graded samples, the dislocation density is normally higher along the [1-10] direction.
基金Project supported by the Advanced Research Foundation of China(Grant No.914xxx803-051xxx111)the National Defense Advanced Research Project of China(Grant No.315xxxxx301)the National Defense Innovation Program of China(Grant No.48xx4)
文摘In this report, the effect of temperature on the In As/Al Sb heterojunction and high-electron-mobility transistors（HEMTs） with a gate length of 2 μm are discussed comprehensively. The results indicate that device performance is greatly improved at cryogenic temperatures. It is also observed that the device performance at 90 K is significantly improved with 27% lower gate leakage current, 12% higher maximum drain current, and 22.5% higher peak transconductance compared to 300 K. The temperature dependence of mobility and the two-dimensional electron gas concentration in the In As/Al Sb heterojunction for the temperature range 90 K-300 K is also investigated. The electron mobility at 90 K（42560 cm2/V·s）is 2.5 times higher than its value at 300 K（16911 cm^2/V·s） because of the weaker lattice vibration and the impurity ionization at cryogenic temperatures, which corresponds to a reduced scattering rate and higher mobility. We also noted that the two-dimensional electron gas concentration decreases slightly from 1.99 × 10^（12） cm^（-2） at 300 K to 1.7 × 10^（12） cm^（-2） at 90 K with a decrease in temperature due to the lower ionization at cryogenic temperature and the nearly constant ？Ec.
文摘In this paper, the activities of components of Ga-Sb system have been calculated from its phase diagram by using computer program CABPD (calculating activities from binary phase diagrams) presented by us in previous paper. The excess free energy of liquid solution can be expressed as: ΔG_m=X_(Ga)X_(Sb)(4392+17022X_(Sb)-15138X_(Sb)) J/mol In order to verify the reliability of calculated results, a discriminant has been proposed.
文摘为实现2μm低发散角激光,提出在Ga Sb基半导体激光器中引入布拉格反射波导,利用光子带隙效应替代传统的全反射进行光场限制。研究了分布反馈反射镜(DBR)的厚度、对数、高低折射率DBR厚度比以及中心腔厚度等参数对激光器垂直远场发散角和光限制因子的影响。结果表明:垂直远场发散角随单对DBR厚度的增加而减小;光限制因子与远场发散角都随拉格反射镜对数的增加而减小,随高低折射率DBR厚度比的减小而增大;随着中心层厚度的增大,光限制因子减小而远场发散角增大。最终在理论上优化设计出了一种双边布拉格反射波导结构的超低垂直发散角2μm Ga Sb基边发射半导体激光器,其垂直远场发散角可降低到10°以下。
文摘The Ga Sb and In Sb binary systems were optimized using Lukas program. The thermodynamic properties and phase diagram data were evaluated by Thermo Calc package. R K polynomials and two sublattice models were used to describe the liquid and Ga x In 1- x Sb phases. A good description for the ternary system was obtained. It was proved to be better than those of previous work.
