High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers

Here we report 1.3μm electrical injection lasers based on InAs/GaAs quantum dots(QDs)grown on a GaAs substrate,which can steadily work at 110-℃without visible degradation.The QD structure is designed by applying the Stranski-Krastanow growth mode in solid source molecular beam epitaxy.The density of InAs QDs in the active region is increased from 3.8×10^(10)cm^(-2)to 5.9×10^(10)cm^(-2).As regards laser performance,the maximum output power of devices with lowdensity QDs as the active region is 65 m W at room temperature,and that of devices with the high-density QDs is 103 mW.Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110-℃.

Simulation and Analysis of Carrier Dynamics in the InAs/GaAs Quantum Dot Laser, Based upon Rate Equations

In this paper, simulation of InAs/GaAs quantum dot (QD) laser is performed based upon a set of eight rate equations for the carriers and photons in five energy states. Carrier dynamics in these lasers were under analysis and the rate equations are solved using 4th order Runge-Kutta method. We have shown that by increasing injected current to the active medium of laser, switching-on and stability time of the system would decrease and power peak and stationary power will be increased. Also, emission in any state will start when the lower state is saturated and remain steady. The results including P-I characteristic curve for the ground state (GS), first excited state (ES1), second excited state (ES2) and output power of the QD laser will be presented.

1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy

The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots （QDs） by molecular beam epitaxy （MBE） is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence （PL） spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.

High-performance InAs/GaAs quantum dot laser with dot layers grown at 425℃

We investigate InAs/GaAs quantum dot （QD） lasers grown by gas source molecular beam epitaxy with different growth temperatures for InAs dot layers. The same laser structures are grown, but the growth temperatures of InAs dot layers are set as 425 and 500℃, respectively. Ridge waveguide laser diodes are fabricated, and the characteristics of the QD lasers are systematically studied. The laser diodes with QDs grown at 425 ~C show better performance, such as threshold current density, output power, internal quantum efficiency, and characteristic temperature, than those with QDs grown at 500℃. This finding is ascribed to the higher QD density and more uniform size distribution of QDs achieved at 425℃.

Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes

The self-assembled growth of InAs/GaAs quantum dots by molecular beam epitaxy is conducted by optimizing several growth parameters, using a one-step interruption method after island formation. The dependence of photoluminescence on areal quantum-dot density is systematically investigated as a function of InAs deposition, growth temperature and arsenic pressure. The results of this investigation along with time-resolved photoluminescence measurements show that the com- bination of a growth temperature of 490℃, with a deposition rate of 0.02 ML/s, under an arsenic pressure of 1×10^-6 Torr （1 Torr = 1.33322×10^2 Pa）, provides the best compromise between high density and the photoluminescence of quantum dot structure, with a radiative lifetime of 780 ps. The applicability of this 5-layer quantum dot structure to high-repetition-rate pulsed lasers is demonstrated with the fabrication and characterization of a monolithic InAs/GaAs quantum-dot passively mode-locked laser operating at nearly 1300 nm. Picosecond pulse generation is achieved from a two-section laser, with a 19.7-GHz repetition rate.

Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition

Photoluminescence （PL） and lasing properties of InAs/GaAs quantum dots （QDs） with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the low growth rate sample shows a greater blueshift of PL peak wavelength. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.

Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates

The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si （100） substrate. Here the direct epitaxial growth condition of 1.3μm InAs/OaAs quantum on a Si substrate is further investigated using atomic force microscopy, etch pit density and temperature-dependent photoluminescence （PL） measurements. The PL for Si-based InAs/GaAs quantum dots appears to be very sensitive to the initial OaAs nucleation temperature and thickness with strongest room-temperature emission at 40000 （17Onto nucleation layer thickness）, due to the lower density of defects generated under this growth condition, and stronger carrier confinement within the quantum dots.

Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots

The threading dislocations(TDs)in GaAs/Si epitaxial layers due to the lattice mismatch seriously degrade the performance of the lasers grown on silicon.The insertion of InAs quantum dots(QDs)acting as dislocation filters is a pretty good alternative to solving this problem.In this paper,a finite element method(FEM)is proposed to calculate the critical condition for InAs/GaAs QDs bending TDs into interfacial misfit dislocations(MDs).Making a comparison of elastic strain energy between the two isolated systems,a reasonable result is obtained.The effect of the cap layer thickness and the base width of QDs on TD bending are studied,and the results show that the bending area ratio of single QD(the bending area divided by the area of the QD base)is evidently affected by the two factors.Moreover,we present a method to evaluate the bending capability of single-layer QDs and multi-layer QDs.For the QD with 24-nm base width and 5-nm cap layer thickness,taking the QD density of 10^(11) cm^(-2) into account,the bending area ratio of single-layer QDs(the area of bending TD divided by the area of QD layer)is about 38.71%.With inserting five-layer InAs QDs,the TD density decreases by 91.35%.The results offer the guidelines for designing the QD dislocation filters and provide an important step towards realizing the photonic integration circuits on silicon.

Stable Temperature Characteristics of InAs/GaAs Quantum Dots at Long Wavelength Emission

The time-resolved photoluminescence and steady photoluminescence (TRPL and PL) spectra on self-assembled InAs/GaAs quantum dots (QDs) are investigated. By depositing GaAs/InAs short period superlattices (SLs), 1.48μm emission is obtained at room temperature. Temperature dependent PL measurements show that the PL intensity of the emission is very steady. It decays only to half as the temperature increases from 15K to room temperature, while at the same time, the intensity of the other emission decreases by a factor of 5 orders of magnitude. These two emissions are attributed to large-size QDs and short period superlattices (SLs), respectively. Large-size QDs are easier to capture and confine carriers, which benefits the lifetime of PL, and therefore makes the emission intensity insensitive to the temperature.

Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition

We demonstrate high-performance broadband tunable external-cavity lasers(ECLs) with the metal-organic chemical vapor deposition(MOCVD) grown In As/In P quantum dots(QDs) structures. Without cavity facet coatings, the 3-d B spectral bandwidth of the Fabry–Perot(FP) laser is approximately 10.8 nm, while the tuning bandwidth of ECLs is 45 nm.Combined with the anti-reflection(AR)/high-reflection(HR) facet coating, a 92 nm bandwidth tuning range has been obtained with the wavelength covering from 1414 nm to 1506 nm. In most of the tuning range, the threshold current density is lower than 1.5 k A/cm2. The maximum output power of 6.5 m W was achieved under a 500 m A injection current.All achievements mentioned above were obtained under continuous-wave(CW) mode at room temperature(RT).

低温GaAs外延层上生长InAs量子点的研究

利用退火技术 ,实现了在低温 Ga As外延层上 In As量子点的生长 .透射电镜 (TEM)研究表明 ,低温 Ga As外延层上生长的 In As量子点比通常生长的 In As量子点明显变小 ,且密度变大 ,认为是由于低温 Ga As中的点缺陷以及 As沉淀引起的 :点缺陷释放了部分弹性能 ,使得量子点变小 ,而 As沉淀可能是量子点密度变大的原因 .在光致发光谱 (PL )上 ,退火低温外延层上生长的量子点的发光峰能量较高 。

生长温度对InAs/GaAs量子点太阳电池的影响研究

InAs/GaAs量子点的生长形貌和特性受不同生长环境和生长条件影响。本文借助光致发光光谱(PL)特性表征方法,通过实验生长,对比研究不同生长温度下获得的量子点性能,结合当前三结叠层GaInP/GaAs/Ge(2-terminal)电池存在的问题,以及该电池的设计、制作要求,分析了InAs量子点的不同生长温度对于具有量子点结构的中电池吸收的影响。

InAs/GaAs量子点材料和激光器

介绍了近年来长波长InAsG/aAs量子点材料的生长、结构性质和量子点激光器的研究进展。

快速率生长MBE InAs/GaAs(001)量子点

用快速率(1.0ML/s)生长MBE InAs/GaAs(001)量子点。原子力显微镜观察结果表明,在量子点体系形成的较早阶段,量子点密度N(θ)随InAs沉积量θ的变化符合自然指数形式N(θ)∝ek(θ-θc),这与以前在慢速生长(≤0.1ML/s)条件下出现的标度规律N(θ)∝(θ-θc)α明显不同。另外,在N(θ)随θ增加的过程中,快速率生长量子点的高度分布没有经历量子点平均高度随沉积量θ逐渐增加的过程。这些实验观察说明,以原子在生长表面作扩散运动为基础的生长动力学理论至少是不全面的,不适用于解释InAs量子点的形成。这些观察和讨论说明,即使在1.0ML/s的快速率生长条件下,量子点密度也可以通过InAs沉积量有效地控制在1.0×108cm-2以下,实现低密度InAs量子点体系的制备。

In_(0.2)Ga_(0.8)As-GaAs复合应力缓冲层上的1.3μm InAs/GaAs自组织量子点

用光荧光谱和原子力显微镜测试技术系统研究了在2 nm In0.2Ga0.8As和xML GaAs的复合应力缓冲层上生长的InAs/GaAs自组织量子点的发光特性和表面形貌.采用In0.2Ga0.8As与薄层GaAs复合的应力缓冲层,由于减少了晶格失配度致使量子点密度从约1.7×109cm-2显著增加到约3.8×109cm-2.同时,复合层也有利于提高量子点中In的组份,使量子点的高宽比增加,促进量子点发光峰红移.对于x=10 ML的样品室温下基态发光峰达到1350 nm.

InAs/GaAs量子点1.3μm单光子发射特性

采用双层耦合量子点的分子束外延生长技术生长了InAs/GaAs量子点样品,把量子点的发光波长成功地拓展到1.3μm.采用光刻的工艺制备了直径为3μm的柱状微腔,提高了量子点荧光的提取效率.在低温5 K下,测量得到量子点激子的荧光寿命约为1 ns;单量子点荧光二阶关联函数为0.015,显示单量子点荧光具有非常好的单光子特性;利用迈克耳孙干涉装置测量得到单光子的相干时间为22 ps,对应的谱线半高全宽度为30μeV,且荧光谱线的线型为非均匀展宽的高斯线型.

δ掺杂Si对InAs/GaAs量子点太阳电池的影响

在In As/Ga As量子点的自组装生长阶段,采用δ掺杂技术对量子点进行不同浓度的Si掺杂,可以使得量子点的室温光致发光峰强度大幅提高,其原因是掺杂的Si原子释放电子钝化了周围的非辐射复合中心。这种掺杂也应用到了量子点太阳电池中,结果表明电池开路电压从0.72 V提高到了0.86 V,填充因子从60.4%提高到73.2%,短路电流从26.9 m A/cm2增加到27.4 m A/cm2。优化的Si掺杂可将量子点太阳的电池效率从11.7%提升到17.26%。

脉冲激光原位辐照对InAs/GaAs(001)量子点生长的影响

在InAs/GaAs(001)量子点生长过程中,当In As沉积量为0.9 ML时,利用紫外纳秒脉冲激光辐照浸润层表面,由于高温下In原子的不稳定性,激光诱导的原子脱附效应被放大,样品表面出现了原子层移除和纳米孔.原子力显微镜测试表明纳米孔呈现以[110]方向为长轴(尺寸:20—50 nm)、[110]方向为短轴(尺寸:15—40 nm)的表面椭圆开口形状,孔的深度为0.5—3 nm.纳米孔的密度与脉冲激光的能量密度正相关.脉冲激光的辐照对量子点生长产生了显著的影响:一方面由于纳米孔的表面自由能低,沉积的In As优先迁移到孔内,纳米孔成为量子点优先成核的位置;另一方面,孔外的区域因为In原子的脱附,量子点的成核被抑制.由于带有纳米孔的浸润层表面具有类似于传统微纳加工技术制备的图形衬底对量子点选择性生长的功能,该研究为量子点的可控生长提供了一种新的思路.

InAs/GaAs量子点生长中应力分析

围绕InAs(InGaAs)/GaA叠层量子点电池的制作,本文通过文献研究和对近邻面生长实验研究认为,InAs/GaAs量子点生长形貌和特性受生长环境条件和生长条件影响。其中,客观、不可改变的外延层与衬底晶格常数、生长台面、超晶格结构等环境条件对量子点生长最为重要。这些环境条件通过生长应力,决定了量子点生长中的有序成核、生长、合并,直至出现缺陷的多晶体生长,其作用贯穿整个量子点生长过程。

1550nm InAs/GaAs量子点调Q光纤激光器

调Q光纤激光器在光纤传感、激光雷达、激光加工和光纤通信等众多方面有着广泛的应用。半导体量子点(QD)由于具有较高的损伤阈值和宽光谱特性,是一种优良的可饱和吸收体(SA),但是目前制备发光中心波长为1550 nm的QD SA依然是一个巨大的挑战。通过在分子束外延(MBE)生长InAs QD过程中加入两次间断制备了1550 nm InAs/GaAs量子点半导体可饱和吸收镜(QD-SESAM),并通过构建光纤直线腔,研制出发光中心波长约为1550 nm的被动调Q光纤激光器。该激光器最大输出功率约为2.5 mW,实现了55 kHz的重复频率,同时达到了1.45μs的脉冲宽度和45.36 nJ的单脉冲能量,表现出了InAs/GaAs QD材料在1550 nm调Q光纤激光器应用中的巨大潜力。