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Molecular Beam Epitaxy of Zero Lattice-Mismatch InAs/GaSb Type-Ⅱ Superlattice 被引量:2
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作者 于海龙 吴皓越 +2 位作者 朱海军 宋国峰 徐云 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第12期142-145,共4页
Type-Ⅱ InAs/GaSb superlattiees made of 13 InAs monolayers (MLs) and 7 GaSb MLs are grown on GaSb substrates by solid source molecular beam epitaxy. To obtain lattice-matched structures, thin InSb layers are inserte... Type-Ⅱ InAs/GaSb superlattiees made of 13 InAs monolayers (MLs) and 7 GaSb MLs are grown on GaSb substrates by solid source molecular beam epitaxy. To obtain lattice-matched structures, thin InSb layers are inserted between InAs and GaSb layers. We complete a series of experiments to investigate the influence of the InSb deposition time, Ⅴ/Ⅲ beam-equivalent pressure ratio and interruption time between each layer, and then characterize the superlattice (SL) structures with high-resolution x-ray diffraction and atomic force microscopy. The optimized growth parameters are applied to grow the 100-period SL structure, resulting in the full-width half-maximum of 29.55 arcsee for the first SL satellite peak and zero lattice-mismatch between the zero-order SL peak and the GaSb substrate peak. 展开更多
关键词 gasb is InSb Molecular Beam Epitaxy of Zero Lattice-Mismatch inas/gasb type SUPERLATTICE inas of
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Strain-induced the dark current characteristics in InAs/GaSb type-Ⅱ superlattice for mid-wave detector 被引量:2
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作者 H.J.Lee S.Y.Ko +1 位作者 Y.H.Kim J.Nah 《Journal of Semiconductors》 EI CAS CSCD 2020年第6期35-38,共4页
Type-Ⅱsuperlattice(T2SL)materials are the key element for infrared(IR)detectors.However,it is well known that the characteristics of the detectors with the T2SL layer are greatly affected by the strain developed duri... Type-Ⅱsuperlattice(T2SL)materials are the key element for infrared(IR)detectors.However,it is well known that the characteristics of the detectors with the T2SL layer are greatly affected by the strain developed during the growth process,which determines the performance of IR detectors.Therefore,great efforts have been made to properly control the strain effect and develop relevant analysis methods to evaluate the strain-induced dark current characteristics.In this work,we report the strain-induced dark current characteristics in InAs/GaSb T2SL MWIR photodetector.The overall strain of InAs/GaSb T2SL layer was analyzed by both high-resolution X-ray diffraction(HRXRD)and the dark current measured from the absorber layer at the elevated temperatures(≥110 K),where the major leakage current component is originated from the reduced minority carrier lifetime in the absorber layer.Our findings indicate that minority carrier lifetime increases as the tensile strain on the InAs/GaSb T2SL is more compensated by the compressive strain through‘InSb-like’interface,which reduces the dark current density of the device.Specifically,tensile strain compensated devices exhibited the dark current density of less than 2×10^-5 A/cm^2 at 120 K,which is more than one order of magnitude lower value compared to that of the device without tensile strain relaxation. 展开更多
关键词 mid-wave detector inas/gasb typeⅡsuper lattice dark current
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Interface effect on superlattice quality and optical properties of InAs/GaSb type-Ⅱ superlattices grown by molecular beam epitaxy 被引量:2
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作者 Zhaojun Liu Lian-Qing Zhu +3 位作者 Xian-Tong Zheng Yuan Liu Li-Dan Lu Dong-Liang Zhang 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第12期671-676,共6页
We systematically investigate the influence of InSb interface(IF)engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-Ⅱsuperlattices(T2SLs).The type-Ⅱsuperlattice structure is ... We systematically investigate the influence of InSb interface(IF)engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-Ⅱsuperlattices(T2SLs).The type-Ⅱsuperlattice structure is 120 periods InAs(8 ML)/GaSb(6 ML)with different thicknesses of InSb interface grown by molecular beam epitaxy(MBE).The highresolution x-ray diffraction(XRD)curves display sharp satellite peaks,and the narrow full width at half maximum(FWHM)of the 0th is only 30-39 arcsec.From high-resolution cross-sectional transmission electron microscopy(HRTEM)characterization,the InSb heterointerfaces and the clear spatial separation between the InAs and GaSb layers can be more intuitively distinguished.As the InSb interface thickness increases,the compressive strain increases,and the surface“bright spots”appear to be more apparent from the atomic force microscopy(AFM)results.Also,photoluminescence(PL)measurements verify that,with the increase in the strain,the bandgap of the superlattice narrows.By optimizing the InSb interface,a high-quality crystal with a well-defined surface and interface is obtained with a PL wavelength of 4.78μm,which can be used for mid-wave infrared(MWIR)detection. 展开更多
关键词 inas/gasb type-Ⅱsuperlattice molecular beam epitaxy interface mid-wave infrared
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Growth Optimization, Strain Compensation and Structure Design of InAs/GaSb Type-II Superlattices for Mid-Infrared Imaging 被引量:1
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作者 Yuxin Song Shumin Wang +5 位作者 Carl Asplund Rickard Marcks von Würtemberg Hedda Malm Amir Karim Xiang Lu Jun Shao 《Crystal Structure Theory and Applications》 2013年第2期46-56,共11页
InAs/GaSb type-II superlattce (T2SL) photodetector structures at the MWIR regime were grown by molecular beam epitaxy. The growth temperature and group-V soaking times were optimized with respect to interface and tran... InAs/GaSb type-II superlattce (T2SL) photodetector structures at the MWIR regime were grown by molecular beam epitaxy. The growth temperature and group-V soaking times were optimized with respect to interface and transport quality. Novel strain compensation schemes with insertion of InSb layers were proposed and tested to be efficient to tune the overall strain between tensile and compressive without degradation of interface and optical quality. The effect of the proposed methods is modeled by analytic functions.? Band structure calculations were also carried out for the proposed T2SL structures to assist optimizing sample designs. Single pixel photodiodes with a low dark current were demonstrated. 展开更多
关键词 inas/gasb type-II Superlattce Molecular Beam EPITAXY Strain COMPENSATION
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Growth of high material quality InAs/GaSb type-Ⅱ superlattice for long-wavelength infrared range by molecular beam epitaxy
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作者 Fang-Qi Lin Nong Li +10 位作者 Wen-Guang Zhou Jun-Kai Jiang Fa-Ran Chang Yong Li Su-Ning Cui Wei-Qiang Chen Dong-Wei Jiang Hong-Yue Hao Guo-Wei Wang Ying-Qiang Xu Zhi-Chuan Niu 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第9期624-627,共4页
By optimizing theⅤ/Ⅲbeam-equivalent pressure ratio,a high-quality InAs/GaSb type-Ⅱsuperlattice material for the long-wavelength infrared(LWIR)range is achieved by molecular beam epitaxy(MBE).High-resolution x-ray d... By optimizing theⅤ/Ⅲbeam-equivalent pressure ratio,a high-quality InAs/GaSb type-Ⅱsuperlattice material for the long-wavelength infrared(LWIR)range is achieved by molecular beam epitaxy(MBE).High-resolution x-ray diffraction(HRXRD),atomic force microscopy(AFM),and Fourier transform infrared(FTIR)spectrometer are used to characterize the material growth quality.The results show that the full width at half maximum(FWHM)of the superlattice zero-order diffraction peak,the mismatching of the superlattice zero-order diffraction peak between the substrate diffraction peaks,and the surface roughness get the best results when the beam-equivalent pressure(BEP)ratio reaches the optimal value,which are 28 arcsec,13 arcsec,and 1.63?,respectively.The intensity of the zero-order diffraction peak is strongest at the optimal value.The relative spectral response of the LWIR detector shows that it exhibits a 100%cut-off wavelength of 12.6μm at 77 K.High-quality epitaxial materials have laid a good foundation for preparing high-performance LWIR detector. 展开更多
关键词 type-Ⅱsuperlattice inas/gasb LONG-WAVELENGTH strain-balanced
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Long-Period InAs/GaSb Type-II Superlattices for Terahertz Application
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作者 Longlong Li Jun Ni Wen Xu 《Journal of Modern Physics》 2014年第17期1880-1888,共9页
We present a theoretical study on the terahertz (THz) optoelectronic properties of long-period InAs/GaSb type-II super lattices (SLs). The eight-band k·p model is used to calculate the electronic structures of su... We present a theoretical study on the terahertz (THz) optoelectronic properties of long-period InAs/GaSb type-II super lattices (SLs). The eight-band k·p model is used to calculate the electronic structures of such SLs and on the basis of band structures, the Boltzmann equation approach is employed to calculate the optical absorption coefficients for the corresponding SL systems. It is found that long-period InAs/GaSb type-II SLs have a considerable absorption in the THz bandwidth. By examining the dependence of THz absorption coefficient on the InAs/GaSb layer widths, we demonstrate that with a proper choice of InAs/GaSb layer widths, an optimized THz absorption can be achieved. This study is pertinent to the potential application of InAs/GaSb type-II SLs as THz photo detectors. 展开更多
关键词 Long-Period inas/gasb type-II SLS THZ OPTOELECTRONIC Properties THZ Band-Gap and Absorption
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1280×1024元InAs/GaSb II类超晶格中/中波双色红外焦平面探测器
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作者 白治中 黄敏 +6 位作者 徐志成 周易 梁钊铭 姚华城 陈洪雷 丁瑞军 陈建新 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2024年第4期437-441,共5页
本文报道了1280×1024元InAs/GaSb II类超晶格中/中波双色红外焦平面阵列探测器的研究结果。探测器采用PN-NP叠层双色外延结构,信号提取采用叠层双色结构和顺序读出方式。运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外... 本文报道了1280×1024元InAs/GaSb II类超晶格中/中波双色红外焦平面阵列探测器的研究结果。探测器采用PN-NP叠层双色外延结构,信号提取采用叠层双色结构和顺序读出方式。运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为中波1:6 ML InAs/7 ML GaSb和中波2:9 ML InAs/7 ML GaSb。焦平面阵列像元中心距为12μm。在80 K时测试,器件双波段的工作谱段为中波1:3~4μm,中波2:3.8~5.2μm。中波1器件平均峰值探测率达到6.32×10^(11) cm·Hz^(1/2)W^(-1),中波2器件平均峰值探测率达到2.84×10^(11) cm·Hz^(1/2)W^(-1)。红外焦平面偏压调节成像测试得到清晰的双波段成像。本文是国内首次报道1280×1024规模InAs/GaSb II类超晶格中/中波双色红外焦平面探测器。 展开更多
关键词 焦平面 inas/gasb 超晶格 双色
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InAs/GaSb Ⅱ类超晶格材料的Si离子注入研究
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作者 何苗 周易 +7 位作者 应翔霄 梁钊铭 黄敏 王志芳 朱艺红 廖科才 王楠 陈建新 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2024年第1期15-22,共8页
Ⅱ类超晶格红外探测器一般通过台面结实现对红外辐射的探测,而通过离子注入实现横向PN结,一方面材料外延工艺简单,同时可以利用超晶格材料横向扩散长度远高于纵向的优势改善光生载流子的输运,且易于制作高密度平面型阵列。本文利用多种... Ⅱ类超晶格红外探测器一般通过台面结实现对红外辐射的探测,而通过离子注入实现横向PN结,一方面材料外延工艺简单,同时可以利用超晶格材料横向扩散长度远高于纵向的优势改善光生载流子的输运,且易于制作高密度平面型阵列。本文利用多种材料表征技术,研究了不同能量的Si离子注入以及退火前后对InAs/GaSb Ⅱ类超晶格材料性能的影响。研究通过Si离子注入,外延材料由P型变为N型,超晶格材料中产生了垂直方向的拉伸应变,晶格常数变大,且失配度随着注入能量的增大而增大,注入前失配度为-0.012%,当注入能量到200 keV时,失配度达到0.072%,超晶格部分弛豫,弛豫程度为14%,而在300℃ 60 s退火后,超晶格恢复完全应变状态,且晶格常数变小,这种张应变是退火引起的Ga-In相互扩散以及Si替位导致的晶格收缩而造成的。 展开更多
关键词 inas/gasbⅡ类超晶格 离子注入 平面结 退火 HRXRD
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InAs/GaSb超晶格台面刻蚀工艺研究综述
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作者 张翔宇 蒋洞微 +1 位作者 贺雯 王金忠 《航空兵器》 CSCD 北大核心 2024年第5期41-49,共9页
本文综述了InAs/GaSb超晶格台面刻蚀工艺研究。从湿法和干法刻蚀的物理化学机理以及参数调控等方面进行分析,旨在阐明工艺条件对台面形貌的影响,以抑制带隙较窄的长波和甚长波超晶格表面漏电流。结果表明,湿法刻蚀中恰当的腐蚀液配比可... 本文综述了InAs/GaSb超晶格台面刻蚀工艺研究。从湿法和干法刻蚀的物理化学机理以及参数调控等方面进行分析,旨在阐明工艺条件对台面形貌的影响,以抑制带隙较窄的长波和甚长波超晶格表面漏电流。结果表明,湿法刻蚀中恰当的腐蚀液配比可以实现两种组分的均匀性刻蚀,而不会导致粗糙的表面和严重的下切;干法刻蚀中,采用Cl_(2)基和CH 4基混合气体,通过调整刻蚀气体类型及比例可实现物理和化学刻蚀两个过程的平衡,保证台面侧壁平滑性和倾角的垂直度。另外,对于不同组分的超晶格,需要选择不同的工艺参数才能满足InAs和GaSb的协同性刻蚀。最后对InAs/GaSb超晶格台面刻蚀工艺作出了展望。 展开更多
关键词 inas/gasb超晶格 湿法刻蚀 干法刻蚀 刻蚀机理 工艺优化
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Mid-wavelength InAs/GaSb type-Ⅱ superlattice barrier detector with nBn design and M barrier
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作者 LIU Zhaojun ZHU Lianqing +3 位作者 LU Lidan DONG Mingli ZHANG Dongliang ZHENG Xiantong 《Optoelectronics Letters》 EI 2023年第10期577-582,共6页
This study reports the performance of an InAs/GaSb type-Ⅱ superlattices(T2SLs) detector with nBn structure for mid-wavelength infrared(MWIR) detection. An electronic band structure of M barrier is calculated using 8-... This study reports the performance of an InAs/GaSb type-Ⅱ superlattices(T2SLs) detector with nBn structure for mid-wavelength infrared(MWIR) detection. An electronic band structure of M barrier is calculated using 8-band k·p method, and the nBn structure is designed with the M barrier. The detector is prepared by wet etching, which is simple in manufacturing process. X-ray diffraction(XRD) and atomic force microscope(AFM) characteristics indicate that the detector material has good crystal quality and surface morphology. The saturation bias of the spectral response measurements at 77 K is 300 m V, and the device is promising to work at a temperature of 140 K. Energy gap of T2SLs versus temperature is fitted by the Varshni curve, and zero temperature bandgap Eg(0), empirical coefficients α and β are extracted. A dark current density of 3.2×10-5A/cm2and differential resistance area(RA) product of 1.0×104Ω·cm2are measured at 77 K. The dominant mechanism of dark current at different temperature ranges is analyzed. The device with a 50% cutoff wavelength of 4.68 μm exhibits a responsivity of 0.6 A/W, a topside illuminated quantum efficiency of 20% without antireflection coating(ARC), and a detectivity of 9.17×1011cm·Hz1/2/W at 77 K and 0.3 V. 展开更多
关键词 inas/gasb BARRIER structure
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InAs/GaSbⅡ类超晶格长波红外探测器研究进展
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作者 田亚芳 史衍丽 李方江 《红外技术》 CSCD 北大核心 2023年第8期799-807,共9页
本文系统报道了基于InAs/GaSbⅡ类超晶格(T2SLs)的长波红外探测器的研究进展。从衬底、材料生长以及器件性能角度对比分析了基于GaSb、InAs衬底的各种器件结构的优缺点。分析结果表明,以InAs为衬底、吸收区材料为InAs/InAs1-xSbx、PB1I... 本文系统报道了基于InAs/GaSbⅡ类超晶格(T2SLs)的长波红外探测器的研究进展。从衬底、材料生长以及器件性能角度对比分析了基于GaSb、InAs衬底的各种器件结构的优缺点。分析结果表明,以InAs为衬底、吸收区材料为InAs/InAs1-xSbx、PB1IB2N型的结构为相对优化的器件结构设计,结合ZnS和Ge的多层膜结构设计或者重掺杂缓冲层,同时采用电感耦合等离子体(inductively coupled plasma)干法刻蚀工艺,该器件的50%截止波长可达12μm,量子效率(quantum efficiency)可提升到65%以上,暗电流密度降低至1×10^(-5) A/cm^(2)。并归纳总结了InAs/GaSb T2SLs长波红外探测器未来的发展趋势。 展开更多
关键词 inas/gasbⅡ类超晶格 器件结构 暗电流 量子效率 结构优化
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InAs/GaSbⅡ类超晶格双色红外焦平面器件的干法刻蚀与湿法腐蚀制备对比研究
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作者 温涛 胡雨农 +3 位作者 李景峰 赵成城 王国伟 刘铭 《红外》 CAS 2023年第4期1-6,共6页
分别采用干法刻蚀工艺路线和湿法腐蚀工艺路线制备了面阵规模为320×256、像元中心距为30μm的InAs/GaSbⅡ类超晶格长/长波双色红外焦平面器件,并对其台面形貌、接触孔形貌、伏安特性以及互连读出电路并封入杜瓦后的中测性能进行了... 分别采用干法刻蚀工艺路线和湿法腐蚀工艺路线制备了面阵规模为320×256、像元中心距为30μm的InAs/GaSbⅡ类超晶格长/长波双色红外焦平面器件,并对其台面形貌、接触孔形貌、伏安特性以及互连读出电路并封入杜瓦后的中测性能进行了对比研究。总结了采用干法工艺和湿法工艺制备双色InAs/GaSbⅡ类超晶格焦平面器件的特点。该研究对InAs/GaSbⅡ类超晶格焦平面器件的研制具有参考意义。 展开更多
关键词 inas/gasb Ⅱ类超晶格 焦平面 双色
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基于AlAsSb/InAsSb超晶格势垒的InAs/InAsSbⅡ类超晶格nBn中波红外探测器
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作者 单一凡 吴东海 +8 位作者 谢若愚 周文广 常发冉 李农 王国伟 蒋洞微 郝宏玥 徐应强 牛智川 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2024年第4期450-456,共7页
InAs/InAsSbⅡ类超晶格避免了InAs/GaSbⅡ类超晶格中与Ga原子相关的缺陷复合中心,具有更高的少数载流子寿命,在高工作温度中波红外探测器制备方面有着良好的应用前景。少数载流子单极势垒结构通常被用来抑制探测器暗电流,如nBn结构探测... InAs/InAsSbⅡ类超晶格避免了InAs/GaSbⅡ类超晶格中与Ga原子相关的缺陷复合中心,具有更高的少数载流子寿命,在高工作温度中波红外探测器制备方面有着良好的应用前景。少数载流子单极势垒结构通常被用来抑制探测器暗电流,如nBn结构探测器。在InAs/InAsSbⅡ类超晶格nBn中波红外光电探测器中,势垒层常采用AlAsSb等多元合金材料,阻挡多数载流子的输运。然而,势垒层与吸收层存在的价带偏移(VBO)使得光电流往往需要在大偏压下饱和,从而增大了探测器暗电流。本文设计了一种AlAsSb/InAsSb超晶格势垒,旨在消除VBO并降低量子效率对偏压的依赖性。研究结果显示,150 K下,设计制备的nBn光电探测器的50%截止波长为4.5μm,探测器光响应在-50 mV的小反向偏压下达到了饱和,3.82μm处的峰值响应度为1.82 A/W,对应量子效率为58.8%。在150 K和-50 mV偏压下,探测器的暗电流密度为2.01×10^(-5)A/cm^(2),计算得到在3.82μm的峰值探测率为6.47×10^(11)cm·Hz^(1/2)/W。 展开更多
关键词 inas/inasSb Ⅱ类超晶格 AlAsSb/inasSb势垒 中波红外 势垒探测器
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nBn结构InAs/GaSb超晶格中/长双波段探测器优化设计
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作者 刘文婧 祝连庆 +6 位作者 张东亮 郑显通 杨懿琛 王文杰 柳渊 鹿利单 刘铭 《红外与激光工程》 EI CSCD 北大核心 2023年第9期73-85,共13页
双波段红外探测可对复杂的红外背景进行抑制,在军用目标识别、医疗诊断和污染监测等方面有重要应用价值。基于二类超晶格的双波段红外探测器在成本和性能方面具有很大的优势,成为新型红外探测器领域的研究热点。然而其暗电流和串扰会极... 双波段红外探测可对复杂的红外背景进行抑制,在军用目标识别、医疗诊断和污染监测等方面有重要应用价值。基于二类超晶格的双波段红外探测器在成本和性能方面具有很大的优势,成为新型红外探测器领域的研究热点。然而其暗电流和串扰会极大地影响双波段红外探测器的性能。因此,设计了nBn结构的InAs/GaSb超晶格中/长波双波段红外探测器,通过仿真比较不同结构的器件在不同偏压下的中波/长波通道的响应率和暗电流大小,分析势垒层厚度、吸收层厚度、不同区域的掺杂对暗电流和串扰的影响,从而得到最佳的模型参数达到减小暗电流和降低串扰的效果。仿真结果显示:nBn结构的中/长波双波段红外探测器在77 K下,中波通道的暗电流密度为4.5×10^(-5)A·cm^(-2),在0.3 V偏压下,2μm处的峰值量子效率为64%,探测率可以达到3.9×10^(11)cm·Hz^(1/2)·W^(-1);长波通道的暗电流密度为1.3×10^(-4)A·cm^(-2),在-0.3 V的偏压下,5.6μm处的峰值量子效率为48%,探测率可以达到4.1×10^(11)cm·Hz^(1/2)·W^(-1)。相关结论可为器件设计和加工提供参考。 展开更多
关键词 红外探测器 双波段 NBN inas/gasb超晶格 暗电流
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AlAsSb的外延再生长对InAs/GaSb红外探测器暗电流抑制效果研究
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作者 严定钰 沈祥 +3 位作者 王庶民 石张勇 张焱超 张凡 《宁波大学学报(理工版)》 CAS 2023年第3期87-93,共7页
采用分子束外延(MBE)技术外延再生长AlAsSb,对InAs/GaSb Ⅱ类超晶格(T2SLs)长波红外探测器的表面缺陷进行钝化,实现了暗电流的显著降低.首先,研究了湿法腐蚀浅台面的最佳腐蚀液配比,获得了低横向腐蚀、光滑的侧壁以及均匀的腐蚀界面.随... 采用分子束外延(MBE)技术外延再生长AlAsSb,对InAs/GaSb Ⅱ类超晶格(T2SLs)长波红外探测器的表面缺陷进行钝化,实现了暗电流的显著降低.首先,研究了湿法腐蚀浅台面的最佳腐蚀液配比,获得了低横向腐蚀、光滑的侧壁以及均匀的腐蚀界面.随后,使用AlAsSb/AlAs/GaAs、AlAsSb/GaSb两种不同的外延再生长组合和单一的SiO_(2)薄层分别对刻蚀后的台面进行钝化,同时保留一个没有钝化的样品作为对照,最后对4种不同钝化条件下探测器的暗电流特性进行了测量.结果发现,使用AlAsSb/GaSb外延再生长钝化层的器件暗电流得到了进一步降低,使用SiO_(2)钝化层的效果次之,而使用AlAsSb/AlAs/GaAs外延再生长钝化层的性能相对较差.上述结果表明,外延再生长钝化技术是降低长波红外探测器暗电流的一种有效方法. 展开更多
关键词 外延再生长 表面钝化 inas/gasbⅡ类超晶格 长波红外探测器 湿法刻蚀
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InAs/GaSb Ⅱ类超晶格红外探测器背减薄技术研究
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作者 王晓乾 胡雨农 +3 位作者 游聪娅 李景峰 李海燕 刘铭 《红外》 CAS 2023年第10期15-20,共6页
针对InAs/GaSb Ⅱ类超晶格红外探测器开发高质量背减薄工艺,获得了高质量衬底表面,改善了超晶格红外探测器组件的成像品质。采用机械抛光和机械化学抛光相结合的工艺减薄衬底,其中机械抛光削减衬底大部分厚度,然后通过机械化学抛光去除... 针对InAs/GaSb Ⅱ类超晶格红外探测器开发高质量背减薄工艺,获得了高质量衬底表面,改善了超晶格红外探测器组件的成像品质。采用机械抛光和机械化学抛光相结合的工艺减薄衬底,其中机械抛光削减衬底大部分厚度,然后通过机械化学抛光去除机械损伤。机械化学抛光过程中,在压力、转速等不变的情况下,主要研究机械化学抛光液的pH值对衬底表面质量的影响。实验结果表明,当机械化学抛光液的pH值为9.4时,获得了高质量、低损伤的芯片衬底表面,并实现了最佳的探测器组件成像效果。 展开更多
关键词 inas/gasbⅡ类超晶格 红外探测器 背减薄 PH值
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Low Crosstalk Three-Color Infrared Detector by Controlling the Minority Carriers Type of InAs/GaSb Superlattices for Middle-Long and Very-Long Wavelength 被引量:5
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作者 蒋洞微 向伟 +7 位作者 国凤云 郝宏玥 韩玺 李晓超 王国伟 徐应强 于清江 牛智川 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第4期151-154,共4页
We report a type-Ⅱ InAs/GaSb superlattice three-color infrared detector for mid-wave (MW), long-wave (LW), and very long-wave (VLW) detections. The detector structure consists of three contacts of NIPIN archite... We report a type-Ⅱ InAs/GaSb superlattice three-color infrared detector for mid-wave (MW), long-wave (LW), and very long-wave (VLW) detections. The detector structure consists of three contacts of NIPIN architecture for MW and LW detections, and hetero-junction NIP architecture for VLW detection. It is found that the spectral crosstalks can be significantly reduced by controlling the minority carriers transport via doping beryllium in the two active regions of NIPIN section. The crosstalk detection at MW, LW, and VLW signals are achieved by selecting the bias voltages on the device. At 77K, the cutoff wavelengths of the three-color detection are 5.3μm (at OmV), 141μm (at 300mV) and 19μm (at -20mV) with the detectivities of 4.6xlO11 cm.Hzl/ZW-1, 2.3×10^10 cm.Hzl/2W-1, and 1.0×10^10cm.Hzl/2W-1 for MW, LW and VLW. The crosstalks of the MW channel, LW channel, and VLW channel are almost 0, 0.25, and 0.6, respectively. 展开更多
关键词 gasb on of Low Crosstalk Three-Color Infrared Detector by Controlling the Minority Carriers type of inas/gasb Superlattices for Middle-Long and Very-Long Wavelength by inas for LONG
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High quantum efficiency long-/long-wave dual-color type-Ⅱ InAs/GaSb infrared detector 被引量:1
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作者 Zhi Jiang Yao-Yao Sun +6 位作者 Chun-Yan Guo Yue-Xi Lv Hong-Yue Hao Dong-Wei Jiang Guo-Wei Wang Ying-Qiang Xu Zhi-Chuan Niu 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第3期386-390,共5页
A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The devic... A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The device could be operated as a single detector for sequential detection and showed high quantum efficiencies. The peak quantum efficiencies of long-wavelength infrared band-1(blue channel) and long-wavelength infrared band-2(red channel) were 44% at 6.3 μm under 20 mV and 57% at 9.1 μm under-60 mV, respectively. The optical performance for each channel was achieved using a 2 μm thickness absorber. Due to the high QE, the specific detectivities of the blue and red channels reached5.0×10^(11) cm·Hz^(1/2)/W at 6.8 μm and 3.1×10^(11) cm·Hz1^(1/2)/W at 9.1 μm, respectively, at 77 K. 展开更多
关键词 infrared detector inas/gasb SUPERLATTICE dual-color molecular beam EPITAXY
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Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors 被引量:1
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作者 王永宾 徐云 +3 位作者 张宇 迂修 宋国峰 陈良惠 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第6期397-402,共6页
This paper presents a theoretical study on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattices with different beryllium concentrations in the InAs layer of the active region. Dark cur... This paper presents a theoretical study on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattices with different beryllium concentrations in the InAs layer of the active region. Dark current, resistancearea product, absorption coefficient and quantum efficiency characteristics are thoroughly examined. The superlattice is residually n-type and it becomes slightly p-type by varying beryllium-doping concentrations, which improves its electrical performances. The optical performances remain almost unaffected with relatively low p-doping levels and begin to deteriorate with increasing p-doping density. To make a compromise between the electrical and optical performances, the photodetector with a doping concentration of 3 ×10^15 cm-3 in the active region is believed to have the best overall performances. 展开更多
关键词 inas/gasb superlattices p-doping concentration electrical and optical properties
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Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition
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作者 LI Li-Gong LIU Shu-Man +6 位作者 LUO Shuai YANG Tao WANG Li-Jun LIU Feng-Qi YE Xiao-Ling XU Bo WANG Zhan-Guo 《Chinese Physics Letters》 SCIE CAS CSCD 2011年第11期194-197,共4页
InAs/GaSb type-II superlattices were grown on(100)GaSb substrates by metalorganic chemical vapor deposition.Raman scattering spectroscopy reveals that it is possible to grow superlattices with almost pure GaAs-like an... InAs/GaSb type-II superlattices were grown on(100)GaSb substrates by metalorganic chemical vapor deposition.Raman scattering spectroscopy reveals that it is possible to grow superlattices with almost pure GaAs-like and mixed-like(plane of mixed As and Sb atoms that connect the GaSb and InAs layers)interfaces.Introducing the InSb-like interface results in nanopipes and As contamination of the GaSb layers.X-ray diffraction and atomic force microscopy demonstrate that the superlattices with a mixed-like interface have better morphology and crystalline quality. 展开更多
关键词 inas/gasb SCATTERING gasb
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