High lattice match growth of InAsSb based materials on GaSb substrates is demonstrated. The present results indicate that a stable substrate temperature and the optimal flux ratios are of critical importance in achiev...High lattice match growth of InAsSb based materials on GaSb substrates is demonstrated. The present results indicate that a stable substrate temperature and the optimal flux ratios are of critical importance in achieving a homogeneous InAsSb based material composition throughout the growth period. The quality of these epilayers is assessed using a high-resolution x-ray diffraction and atomic force microscope. The mismatch between the GaSb substrate and InAsSb alloy achieves almost zero, and the rms surface roughness of InAsSb alloy achieves around 1.7A over an area of 28μm × 28μm. At the same time, the mismatches between GaSb and InAs/InAs0.73Sb0.27 superlattices （SLs） achieve approximately 100 arcsec （75 periods） and zero （300 periods）, with the surface rms roughnesses of InAs/InAs0.73Sb0.27 SLs around 1.8 A （75 periods） and 2.1A （300 periods） over an area of 20 μm×20 μm, respectively. After fabrication and characterization of the devices, the dynamic resistance of the n-barrier-n InAsSb photodetector near zero bias is of the order of 10^6Ω·cm^2. At 77K, the positive-intrinsic-negative photodetectors are demonstrated in InAsSb and InAs/InAsSb SL （75 periods） materials, exhibiting fifty-percent cutoff wavelengths of 3.8μm and 5.1μm, respectively.展开更多
采用分子束外延技术在GaSb衬底上生长了PIN型长波红外28 ML InAs/7 ML InAs0.48Sb0.52超晶格探测器材料,研究了Sb浸润界面对其表面形貌、晶体结构和光电性能的影响。结果发现:相对于无界面控制的超晶格,采用Sb浸润界面的超晶格表面更平...采用分子束外延技术在GaSb衬底上生长了PIN型长波红外28 ML InAs/7 ML InAs0.48Sb0.52超晶格探测器材料,研究了Sb浸润界面对其表面形貌、晶体结构和光电性能的影响。结果发现:相对于无界面控制的超晶格,采用Sb浸润界面的超晶格表面更平整,表面粗糙度仅为1.28;超晶格晶体结构更完整,界面起伏明显减小,与衬底的晶格失配度由3.26%减小到2.97%。InAs/InAsSb超晶格探测器的50%截止波长为10μm,量子效率为3.1%;Sb浸润界面的超晶格具有更低的暗电流和更高的微分阻抗,-50 mV偏压下暗电流密度为0.12 A/cm^ 2,零偏阻抗面积乘积(R 0A)为0.44Ω·cm^2,计算得到探测率为5.06×10^7 cm·Hz 1/2/W。Sb浸润界面有效抑制了Sb的扩散,提高了超晶格的晶体质量和探测性能,但失配应力依然很大。这些结果为高质量长波红外InAs/InAsSb超晶格的界面生长提供了依据。展开更多
InAsSb epilayers with a cutoff wavelength of 4.8 μm have been successfully grown on InAs substrates by one-step liquid phase epitaxy （LPE） technology. The epilayers were characterized by X-ray diffraction （XRD）, ...InAsSb epilayers with a cutoff wavelength of 4.8 μm have been successfully grown on InAs substrates by one-step liquid phase epitaxy （LPE） technology. The epilayers were characterized by X-ray diffraction （XRD）, Fourier transform infrared （PTIR） transmittance measurements and scanning electron microscopy （SEM）. The influence of different growth conditions on the optical and structural properties of the materials was studied. The results revealed that the good crystalline quality, mirror smooth surface and flat interface of InAsSb epilayers were achieved. They benefited from optimized growth conditions, i.e., sufficient homogeneity of the growth melt and a very slow cooling rate.展开更多
Here in this paper,we report a room-temperature operating infrared photodetector based on the interband transition of an In As Sb/Ga Sb quantum well.The interband transition energy of 5-nm thick In As（0.91）Sb（0.09...Here in this paper,we report a room-temperature operating infrared photodetector based on the interband transition of an In As Sb/Ga Sb quantum well.The interband transition energy of 5-nm thick In As（0.91）Sb（0.09） embedded in the Ga Sb barrier is calculated to be 0.53 e V（2.35μm）,which makes the absorption range of In As Sb cover an entire range from short-wavelength infrared to long-wavelength infrared spectrum.The fabricated photodetector exhibits a narrow response range from 2.0μm to 2.3μm with a peak around 2.1μm at 300 K.The peak responsivity is 0.4 A/W under-500-m Vapplied bias voltage,corresponding to a peak quantum efficiency of 23.8%in the case without any anti-reflection coating.At 300 K,the photodetector exhibits a dark current density of 6.05×10^-3A/cm^2 under-400-m V applied bias voltage and 3.25×10^-5A/cm^2 under zero,separately.The peak detectivity is 6.91×10^10cm·Hz^1/2/W under zero bias voltage at 300 K.展开更多
we report n Bn photodetectors based on In As0.91 Sb0.09 with a 100% cut-off wavelength of 4.75 μm at 300 K. The band of an n Bn detector is similar to that of a standard pin detector, but there is special wide bandga...we report n Bn photodetectors based on In As0.91 Sb0.09 with a 100% cut-off wavelength of 4.75 μm at 300 K. The band of an n Bn detector is similar to that of a standard pin detector, but there is special wide bandgap Al As0.08 Sb0.92 barrier layer in the n Bn detector, in which the depletion region of n Bn detector exists. The n Bn design has many advantages, such as low dark current and high quantum efficiency, because the n Bn design can suppress the generation–recombination(GR)current that is the main composition of standard pin detector dark current. The constant slope of the Arrhenius plot of J0–1/T indicates the absence of the generation–recombination dark current. We fabricate an n Bn detector with a quantum efficiency(QE) maximum of ~ 60% under-0.2-V bias voltage. The In As Sb n Bn detectors may be a competitive candidate for midwavelength infrared detector.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11474248,61176127,61006085,61274013 and 61306013the Key Program for International S&T Cooperation Projects of China under Grant No 2011DFA62380the Ph.D. Programs Foundation of the Ministry of Education of China under Grant No 20105303120002
文摘High lattice match growth of InAsSb based materials on GaSb substrates is demonstrated. The present results indicate that a stable substrate temperature and the optimal flux ratios are of critical importance in achieving a homogeneous InAsSb based material composition throughout the growth period. The quality of these epilayers is assessed using a high-resolution x-ray diffraction and atomic force microscope. The mismatch between the GaSb substrate and InAsSb alloy achieves almost zero, and the rms surface roughness of InAsSb alloy achieves around 1.7A over an area of 28μm × 28μm. At the same time, the mismatches between GaSb and InAs/InAs0.73Sb0.27 superlattices （SLs） achieve approximately 100 arcsec （75 periods） and zero （300 periods）, with the surface rms roughnesses of InAs/InAs0.73Sb0.27 SLs around 1.8 A （75 periods） and 2.1A （300 periods） over an area of 20 μm×20 μm, respectively. After fabrication and characterization of the devices, the dynamic resistance of the n-barrier-n InAsSb photodetector near zero bias is of the order of 10^6Ω·cm^2. At 77K, the positive-intrinsic-negative photodetectors are demonstrated in InAsSb and InAs/InAsSb SL （75 periods） materials, exhibiting fifty-percent cutoff wavelengths of 3.8μm and 5.1μm, respectively.
基金Supported by the National Natural Science Foundation of China(61774130,11474248,61790581,51973070)the Ph.D.Pro⁃grams Foundation of Ministry of Education of China(20105303120002)National Key Technology Research and Development Program of the Ministry of Sci⁃ence and Technology of China(2018YFA0209101).
基金provided by the National Natural Science Foundation of China (No. 60777022)the Program for Young Excellent Tal-ents in Tongji University
文摘InAsSb epilayers with a cutoff wavelength of 4.8 μm have been successfully grown on InAs substrates by one-step liquid phase epitaxy （LPE） technology. The epilayers were characterized by X-ray diffraction （XRD）, Fourier transform infrared （PTIR） transmittance measurements and scanning electron microscopy （SEM）. The influence of different growth conditions on the optical and structural properties of the materials was studied. The results revealed that the good crystalline quality, mirror smooth surface and flat interface of InAsSb epilayers were achieved. They benefited from optimized growth conditions, i.e., sufficient homogeneity of the growth melt and a very slow cooling rate.
基金Project supported by the National Natural Science Foundation of China(Grant No.11574362)
文摘Here in this paper,we report a room-temperature operating infrared photodetector based on the interband transition of an In As Sb/Ga Sb quantum well.The interband transition energy of 5-nm thick In As（0.91）Sb（0.09） embedded in the Ga Sb barrier is calculated to be 0.53 e V（2.35μm）,which makes the absorption range of In As Sb cover an entire range from short-wavelength infrared to long-wavelength infrared spectrum.The fabricated photodetector exhibits a narrow response range from 2.0μm to 2.3μm with a peak around 2.1μm at 300 K.The peak responsivity is 0.4 A/W under-500-m Vapplied bias voltage,corresponding to a peak quantum efficiency of 23.8%in the case without any anti-reflection coating.At 300 K,the photodetector exhibits a dark current density of 6.05×10^-3A/cm^2 under-400-m V applied bias voltage and 3.25×10^-5A/cm^2 under zero,separately.The peak detectivity is 6.91×10^10cm·Hz^1/2/W under zero bias voltage at 300 K.
基金National Key Technologies Research and Development Program of China(Grant No.2018YFA0209104)the Major Program of the National Natural Science Foundation of China(Grant No.61790581).
文摘we report n Bn photodetectors based on In As0.91 Sb0.09 with a 100% cut-off wavelength of 4.75 μm at 300 K. The band of an n Bn detector is similar to that of a standard pin detector, but there is special wide bandgap Al As0.08 Sb0.92 barrier layer in the n Bn detector, in which the depletion region of n Bn detector exists. The n Bn design has many advantages, such as low dark current and high quantum efficiency, because the n Bn design can suppress the generation–recombination(GR)current that is the main composition of standard pin detector dark current. The constant slope of the Arrhenius plot of J0–1/T indicates the absence of the generation–recombination dark current. We fabricate an n Bn detector with a quantum efficiency(QE) maximum of ~ 60% under-0.2-V bias voltage. The In As Sb n Bn detectors may be a competitive candidate for midwavelength infrared detector.
