用 MOCVD方法生长了 In Ga As/ In Ga As P多量子阱微碟激光器外延片 ,用光刻、干法刻蚀和湿法刻蚀等现代化的微加工技术制备出直径 9.5μm的 In Ga As/ In Ga As P微碟激光器 ,并详细介绍了整个制备工艺过程 .在液氮温度下用氩离子激...用 MOCVD方法生长了 In Ga As/ In Ga As P多量子阱微碟激光器外延片 ,用光刻、干法刻蚀和湿法刻蚀等现代化的微加工技术制备出直径 9.5μm的 In Ga As/ In Ga As P微碟激光器 ,并详细介绍了整个制备工艺过程 .在液氮温度下用氩离子激光器泵浦方式实现了低阈值光泵激射 ,测出单个微碟激光器的阈值光功率为 15 0μW,激射波长约为 1.6μm,品质因数 Q=80 0 ,激射光谱线宽为 2 nm,同时指出微碟激光器激射线宽比 F-展开更多
GSMBE grown 1 84 micron wavelength InGaAs/InGaAsP/InP strained quantum well lasers are reported. Lasers with 800 micron long cavity and 40 micron wide planar electrical stripe have been operated under the pulsed r...GSMBE grown 1 84 micron wavelength InGaAs/InGaAsP/InP strained quantum well lasers are reported. Lasers with 800 micron long cavity and 40 micron wide planar electrical stripe have been operated under the pulsed regime at room temperature. At 20℃, the threshold current density is 3 8kA/cm 2 and the external different quantum efficiency is 9 3%.展开更多
The internal behaviors of carriers in InGaAsP single-junction solar cell are investigated by using electroluminescence(EL) measurements. Two emission peaks can be observed in current-dependent electroluminescence spec...The internal behaviors of carriers in InGaAsP single-junction solar cell are investigated by using electroluminescence(EL) measurements. Two emission peaks can be observed in current-dependent electroluminescence spectra at low temperatures, and carrier localization exists for both peaks under low excitation. The trends of power index α extracted from excitation-dependent EL spectra at different temperatures imply that there exists a competition between Shockley–Read–Hall recombination and Auger recombination. Auger recombination becomes dominant at high temperatures, which is probably responsible for the lower current density of InGaAsP solar cell. Besides, the anomalous “S-shape” tendency with the temperature of band-edge peak position can be attributed to potential fluctuation and carrier redistribution, demonstrating delocalization, transfer, and redistribution of carriers in the continuum band-edge. Furthermore, the strong reduction of activation energy at high excitations indicates that electrons and holes escaped independently, and the faster-escaping carriers are holes.展开更多
文摘用 MOCVD方法生长了 In Ga As/ In Ga As P多量子阱微碟激光器外延片 ,用光刻、干法刻蚀和湿法刻蚀等现代化的微加工技术制备出直径 9.5μm的 In Ga As/ In Ga As P微碟激光器 ,并详细介绍了整个制备工艺过程 .在液氮温度下用氩离子激光器泵浦方式实现了低阈值光泵激射 ,测出单个微碟激光器的阈值光功率为 15 0μW,激射波长约为 1.6μm,品质因数 Q=80 0 ,激射光谱线宽为 2 nm,同时指出微碟激光器激射线宽比 F-
文摘GSMBE grown 1 84 micron wavelength InGaAs/InGaAsP/InP strained quantum well lasers are reported. Lasers with 800 micron long cavity and 40 micron wide planar electrical stripe have been operated under the pulsed regime at room temperature. At 20℃, the threshold current density is 3 8kA/cm 2 and the external different quantum efficiency is 9 3%.
基金Supported by the National Natural Science Foundation of China(NSFC)(62174166,11991063,U2241219)Shanghai Municipal Science and Technology Major Project(2019SHZDZX01,22JC1402902)the Strategic Priority Research Program of Chinese Academy of Sciences(XDB43010200)。
基金Supported by the National Natural Science Foundation of China(12027805,62171136,62174166,U2241219)the Science and Technology Commission of Shanghai Municipality(2019SHZDZX01,22JC1402902)the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB43010200)。
基金Project supported by the National Key Research and Development Program,China (Grant No.2018YFB2003305)the National Natural Science Foundation of China (Grant Nos.61774165 and 61827823)the Key Laboratory Fund in Suzhou Institute of Suzhou Nano-Tech and NanoBionis (SINANO),Chinese Academy of Sciences (Grant No.Y4JAQ21005)。
文摘The internal behaviors of carriers in InGaAsP single-junction solar cell are investigated by using electroluminescence(EL) measurements. Two emission peaks can be observed in current-dependent electroluminescence spectra at low temperatures, and carrier localization exists for both peaks under low excitation. The trends of power index α extracted from excitation-dependent EL spectra at different temperatures imply that there exists a competition between Shockley–Read–Hall recombination and Auger recombination. Auger recombination becomes dominant at high temperatures, which is probably responsible for the lower current density of InGaAsP solar cell. Besides, the anomalous “S-shape” tendency with the temperature of band-edge peak position can be attributed to potential fluctuation and carrier redistribution, demonstrating delocalization, transfer, and redistribution of carriers in the continuum band-edge. Furthermore, the strong reduction of activation energy at high excitations indicates that electrons and holes escaped independently, and the faster-escaping carriers are holes.
