In Ga Al P超高亮 L ED是近年来发展的新型可见光 LED,具有发光效率高、电流承受能力强及耐温性能好等特点 ,应用于各种户外显示与照明装置。本文汇集各厂家 In Ga Al P超高亮 LED芯片 ,并制成器件 ,对其多种性能进行对比分析 ,测试超高...In Ga Al P超高亮 L ED是近年来发展的新型可见光 LED,具有发光效率高、电流承受能力强及耐温性能好等特点 ,应用于各种户外显示与照明装置。本文汇集各厂家 In Ga Al P超高亮 LED芯片 ,并制成器件 ,对其多种性能进行对比分析 ,测试超高亮 LED的发光强度与电流的关系以研究饱和电流的大小 ,并进行电耐久性试验以考核超高亮 LED芯片的可靠性 ;简要介绍了封装工艺设计对超高亮 L ED性能参数的影响 ,并提出超高亮 LED性能及可靠性的其它要求 ,为客户选用超高亮 LED提供相对的依据。展开更多
The relationship between the photometric, electric, and thermal parameters of light-emitting diodes（LEDs） is important for optimizing the LED illumination design. Indium gallium aluminium phosphide（InGaAlP）-based ...The relationship between the photometric, electric, and thermal parameters of light-emitting diodes（LEDs） is important for optimizing the LED illumination design. Indium gallium aluminium phosphide（InGaAlP）-based thin-film surface-mounted device（SMD） LEDs have attracted wide attention in research and development due to their portability and miniaturization. We report the optical characterization of InGaAlP thin-film SMD LED mounted on FR4, 2 W, and 5 W aluminum（Al） packages. The optical and thermal parameters of LED are determined at different injection currents and ambient temperatures by combining the T3ster（thermal transient tester） and TeraL ED（thermal and radiometric characterization of power LEDs） systems. Analysis shows that LED on a 5 W Al substrate package obtains the highest luminous and optical efficiency.展开更多
文摘In Ga Al P超高亮 L ED是近年来发展的新型可见光 LED,具有发光效率高、电流承受能力强及耐温性能好等特点 ,应用于各种户外显示与照明装置。本文汇集各厂家 In Ga Al P超高亮 LED芯片 ,并制成器件 ,对其多种性能进行对比分析 ,测试超高亮 LED的发光强度与电流的关系以研究饱和电流的大小 ,并进行电耐久性试验以考核超高亮 LED芯片的可靠性 ;简要介绍了封装工艺设计对超高亮 L ED性能参数的影响 ,并提出超高亮 LED性能及可靠性的其它要求 ,为客户选用超高亮 LED提供相对的依据。
文摘The relationship between the photometric, electric, and thermal parameters of light-emitting diodes（LEDs） is important for optimizing the LED illumination design. Indium gallium aluminium phosphide（InGaAlP）-based thin-film surface-mounted device（SMD） LEDs have attracted wide attention in research and development due to their portability and miniaturization. We report the optical characterization of InGaAlP thin-film SMD LED mounted on FR4, 2 W, and 5 W aluminum（Al） packages. The optical and thermal parameters of LED are determined at different injection currents and ambient temperatures by combining the T3ster（thermal transient tester） and TeraL ED（thermal and radiometric characterization of power LEDs） systems. Analysis shows that LED on a 5 W Al substrate package obtains the highest luminous and optical efficiency.
