In this paper,InGaAs p-i-n photodetectors(PDs)on an InP/SiO2/Si(InPOI)substrate fabricated by ion-slicing technology are demonstrated and compared with the identical device on a commercial InP substrate.The quality of...In this paper,InGaAs p-i-n photodetectors(PDs)on an InP/SiO2/Si(InPOI)substrate fabricated by ion-slicing technology are demonstrated and compared with the identical device on a commercial InP substrate.The quality of epitaxial layers on the InPOI substrate is similar to that on the InP substrate.The photo responsivities of both devices measured at 1.55μm are comparable,which are about 0.808-0.828 A W^(-1).Although the dark current of PD on the InPOI substrate is twice as high as that of PD on the InP substrate at 300 K,the peak detectivities of both PDs are comparable.In general,the overall performance of the InPOI-based PD is comparable to the InP-based PD,demonstrating that the ion-slicing technology is a promising route to enable the highquality Si-based InP platform for the full photonic integration on a Si substrate.展开更多
The resonant excitation is used to generate photo-excited carriers in quantum wells to observe the process of the carriers transportation by comparing the photoluminescence results between quantum wells with and witho...The resonant excitation is used to generate photo-excited carriers in quantum wells to observe the process of the carriers transportation by comparing the photoluminescence results between quantum wells with and without a p-n junction. It is observed directly in experiment that most of the photo-excited carriers in quantum wells with a p-n junction escape from quantum wells and form photoeurrent rather than relax to the ground state of the quantum wells. The photo absorption coei^cient of multiple quantum wells is also enhanced by a p-n junction. The results pave a novel way for solar cells and photodetectors making use of low-dimensional structure.展开更多
Zn diffusion into InP was carried out ex-situ using a new Zn diffusion technique with zinc phosphorus particles placed around InP materials as zinc source in a semi-closed chamber formed by a modified diffusion furnac...Zn diffusion into InP was carried out ex-situ using a new Zn diffusion technique with zinc phosphorus particles placed around InP materials as zinc source in a semi-closed chamber formed by a modified diffusion furnace. The optical characteristics of the Zn-diffused InP layer for the planar-type InGaAs/InP PIN photodetectors grown by molecular beam epitaxy （MBE） has been investigated by photoluminescence （PL） measurements. The temperature-dependent PL spectrum of Zn-diffused InP samples at different diffusion temperatures showed that band-to-acceptor transition dominates the PL emission, which indicates that Zn was commendably diffused into InP layer as the acceptor. High quality Zn-diffused InP layer with typically smooth surface was obtained at 580 ℃for 10 min. Furthermore, more interstitial Zn atoms were activated to act as acceptors after a rapid annealing process. Based on the above Zn-diffusion technique, a 50μm planar-type InGaAs/InP PIN photodector device was fabricated and exhibited a low dark current of 7.73 pA under a reverse bias potential of -5 V and a high break- down voltage of larger than 41 V （1 〈 10μA）. In addition, a high responsivity of 0.81 A/W at 1.31/~m and 0.97 A/W at 1.55μm was obtained in the developed PIN photodetector.展开更多
基金supported by the National Key Research and Development Program of China(Grant No.2017YFE0131300)the National Natural Science Foundation of China(Grant Nos.U1732268,61874128,11622545,61851406,11705262,61875220,and 61804157)+7 种基金the Frontier Science Key Program of Chinese Academy of Sciences(Grant Nos.QYZDY-SSWJSC032,and ZDBS-LY-JSC009)the Chinese-Austrian Cooperative Research and Development Project(Grant No.GJHZ201950)the Shanghai Science and Technology Innovation Action Plan Program(Grant No.17511106202)the Program of Shanghai Academic Research Leader(Grant No.19XD1404600)the Shanghai Youth Top Talent ProgramShanghai Sailing Program(Grant Nos.19YF1456200,and 19YF1456400)the K.C.Wong Education Foundation(Grant No.GJTD-2019-11)the NCBiR within the Polish-China(Grant No.WPC/130/NIR-Si/2018)。
文摘In this paper,InGaAs p-i-n photodetectors(PDs)on an InP/SiO2/Si(InPOI)substrate fabricated by ion-slicing technology are demonstrated and compared with the identical device on a commercial InP substrate.The quality of epitaxial layers on the InPOI substrate is similar to that on the InP substrate.The photo responsivities of both devices measured at 1.55μm are comparable,which are about 0.808-0.828 A W^(-1).Although the dark current of PD on the InPOI substrate is twice as high as that of PD on the InP substrate at 300 K,the peak detectivities of both PDs are comparable.In general,the overall performance of the InPOI-based PD is comparable to the InP-based PD,demonstrating that the ion-slicing technology is a promising route to enable the highquality Si-based InP platform for the full photonic integration on a Si substrate.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11574362,61210014,and 11374340the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission under Grant No Z151100003515001
文摘The resonant excitation is used to generate photo-excited carriers in quantum wells to observe the process of the carriers transportation by comparing the photoluminescence results between quantum wells with and without a p-n junction. It is observed directly in experiment that most of the photo-excited carriers in quantum wells with a p-n junction escape from quantum wells and form photoeurrent rather than relax to the ground state of the quantum wells. The photo absorption coei^cient of multiple quantum wells is also enhanced by a p-n junction. The results pave a novel way for solar cells and photodetectors making use of low-dimensional structure.
基金Project supported by the Key R&D Program of Jiangsu Province(No.BE2016085)the National Natural Science Foundation of China(Nos.61674051)the External Cooperation Program of BIC,Chinese Academy of Sciences(No.121E32KYSB20160071)
文摘Zn diffusion into InP was carried out ex-situ using a new Zn diffusion technique with zinc phosphorus particles placed around InP materials as zinc source in a semi-closed chamber formed by a modified diffusion furnace. The optical characteristics of the Zn-diffused InP layer for the planar-type InGaAs/InP PIN photodetectors grown by molecular beam epitaxy （MBE） has been investigated by photoluminescence （PL） measurements. The temperature-dependent PL spectrum of Zn-diffused InP samples at different diffusion temperatures showed that band-to-acceptor transition dominates the PL emission, which indicates that Zn was commendably diffused into InP layer as the acceptor. High quality Zn-diffused InP layer with typically smooth surface was obtained at 580 ℃for 10 min. Furthermore, more interstitial Zn atoms were activated to act as acceptors after a rapid annealing process. Based on the above Zn-diffusion technique, a 50μm planar-type InGaAs/InP PIN photodector device was fabricated and exhibited a low dark current of 7.73 pA under a reverse bias potential of -5 V and a high break- down voltage of larger than 41 V （1 〈 10μA）. In addition, a high responsivity of 0.81 A/W at 1.31/~m and 0.97 A/W at 1.55μm was obtained in the developed PIN photodetector.
