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Controlling the Goos-H?nchen Shift via Incoherent Pumping Field and Electron Tunneling in the Triple Coupled InGaAs/GaAs Quantum Dots
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作者 R.Nasehi S.H.Asadpour +1 位作者 H.Rahimpour Soleimani M.Mahmoudi 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第1期55-59,共5页
We study the controlling of the Goos-Hanchen (GH) shifts in reflected and transmitted light beams in the triple coupled InGaAs/GaAs quantum dot (QD) nanostructures with electron tunneling and incoherent pumping fi... We study the controlling of the Goos-Hanchen (GH) shifts in reflected and transmitted light beams in the triple coupled InGaAs/GaAs quantum dot (QD) nanostructures with electron tunneling and incoherent pumping field. It is shown that the lateral shift can become either large negative or large positive, which can be controlled by the electron tunneling and the rate of incoherent pump field in different incident angles. It is also demonstrated that the properties of the OH shifts are strongly dependent on the probe absorption beam of the intracavity medium due to the switching from superluminal light propagation to subluminal behavior or vice versa. Our suggested system can be considered as a new theoretical method for developing a new nano-optoelectronic sensor. 展开更多
关键词 gaas on it is of Controlling the Goos-H?nchen Shift via Incoherent Pumping Field and Electron Tunneling in the Triple Coupled ingaas/gaas quantum dots for in
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Optimization of InGaAs Quantum Dots for Optoelectronic Applications
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作者 段瑞飞 王宝强 +1 位作者 朱占平 曾一平 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第10期1009-1015,共7页
Self-assembled In 0.35Ga 0.65As/GaAs quantum dots with low indium content are grown under different growth temperature and investigated using contact atomic force microscopy(AFM).In order to obtain high density ... Self-assembled In 0.35Ga 0.65As/GaAs quantum dots with low indium content are grown under different growth temperature and investigated using contact atomic force microscopy(AFM).In order to obtain high density and high uniformity of quantum dots,optimized conditions are concluded for MBE growth.Optimized growth conditions also compared with these of InAs/GaAs quantum dots.This will be very useful for InGaAs/GaAs QDs optoelectronic applications,such as quantum dots lasers and quantum dots infrared photodetectors. 展开更多
关键词 ingaas/gaas quantum dot OPTIMIZATION MBE AFM OPTOELECTRONICS
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Highly Sensitive Photodetectors Based on WS_(2) Quantum Dots/GaAs Heterostructures
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作者 LI Xianshuai LIN Fengyuan +4 位作者 HOU Xiaobing LI Kexue LIAO Lei HAO Qun WEI Zhipeng 《发光学报》 EI CAS CSCD 北大核心 2024年第10期1699-1706,共8页
The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum ... The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz^(-1/2),a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs. 展开更多
关键词 gaas nanowires WS_(2) quantum dots PHOTODETECTORS type-Ⅱenergy band structure
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Optical Characteristics of InAs Quantum Dots on GaAs Matrix by Using Various InGaAs Structures
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作者 孔令民 吴正云 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2006年第2期76-79,共4页
The effcts of various InGaAs layers on the structural and optical properties of InAs self-assembled quantum dots( QDs ) grown by molecular-beam epitaxy (MBE) were investigated. The emission wavelength of 1317 nm ... The effcts of various InGaAs layers on the structural and optical properties of InAs self-assembled quantum dots( QDs ) grown by molecular-beam epitaxy (MBE) were investigated. The emission wavelength of 1317 nm was obtained by embedding InAs QDs in InGaAs / GaAs quantum well. The temperature-dependent and time-resolved photoluminescence ( TDPL and TRPL ) were used to study the dynomic characteristics of carriers. InGaAs cap layer may improve the quality of quantum dots for the strain relaxation around QDs, which results in a stronger PL inteasity and an increase of PL peak lifetime up to 170 K. We found that InGaAs buffer layer may reduce the PL peak lifetime of InAs QDs, which is due to the buffer layer accelerating the carrier migration. The results also show that InGaAs cap layer can increase the temperature point when the thermal reemission and nonradiative recombination contribute significantly to the carrier dynamics. 展开更多
关键词 ingaas layer InAs quantum dots time-resolved PL spectra
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Effect of In_xGa_(1-x)As Interlayer on Surface Morphology and Optical Properties of GaSb/InGaAs Type-Ⅱ Quantum Dots Grown on InP (100) Substrates
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作者 陈虞龙 高优 +4 位作者 陈弘 张辉 何苗 李述体 郑树文 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第9期120-123,共4页
The effects of indium composition in InGaAs interlayer and on optical properties of GaSb/InGaAs QD material on morphology of GaSb/InGaAs quantum dots (QDs) system are studied. AFM images show that the change of the ... The effects of indium composition in InGaAs interlayer and on optical properties of GaSb/InGaAs QD material on morphology of GaSb/InGaAs quantum dots (QDs) system are studied. AFM images show that the change of the indium composition in InGaAs interlayer can alter the GaSb QD morphology. It is found that low indium composition in InGaAs interlayer can promote the formation of QDs, while high indium composition can inhibit the formation of QDs. The photoluminescence (PL) spectra of GaSb/InGaAs QDs at 8 K under low excitation power indicate that the third root of the excitation power is linear with the peak position, which provides a direct evidence for their luminescence belonging to type-Ⅱ material optical transition. The PL spectra at 8 K under an excitation power of 90row show that the optical properties of GaSb/InGaAs QD material system can be affected by the indium composition in the InGaAs interlayer, and the PL peak position is linear with the indium composition. The optical properties of GaSb/InGaAs QDs can be improved by adjusting the indium composition in the InGaAs interlayer. 展开更多
关键词 ingaas in it GASB quantum dots Grown on InP SUBSTRATES x)As Interlayer on Surface Morphology and Optical Properties of GaSb/ingaas Type of on
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Direct Observation of Carrier Transportation Process in InGaAs/GaAs Multiple Quantum Wells Used for Solar Cells and Photodetectors 被引量:1
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作者 孙庆灵 王禄 +7 位作者 江洋 马紫光 王文奇 孙令 王文新 贾海强 周均铭 陈弘 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第10期103-106,共4页
The resonant excitation is used to generate photo-excited carriers in quantum wells to observe the process of the carriers transportation by comparing the photoluminescence results between quantum wells with and witho... The resonant excitation is used to generate photo-excited carriers in quantum wells to observe the process of the carriers transportation by comparing the photoluminescence results between quantum wells with and without a p-n junction. It is observed directly in experiment that most of the photo-excited carriers in quantum wells with a p-n junction escape from quantum wells and form photoeurrent rather than relax to the ground state of the quantum wells. The photo absorption coei^cient of multiple quantum wells is also enhanced by a p-n junction. The results pave a novel way for solar cells and photodetectors making use of low-dimensional structure. 展开更多
关键词 ingaas on of Direct Observation of Carrier Transportation Process in ingaas/gaas Multiple quantum Wells Used for Solar Cells and Photodetectors in for
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Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition
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作者 梁松 朱洪亮 +7 位作者 潘教青 赵玲娟 王鲁峰 周帆 舒惠云 边静 安欣 王圩 《Chinese Physics B》 SCIE EI CAS CSCD 2008年第11期4300-4304,共5页
Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low grow... Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the low growth rate sample shows a greater blueshift of PL peak wavelength. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers. 展开更多
关键词 metal-organic chemical vapour deposition InAs/gaas quantum dots laser
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Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates
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作者 王霆 刘会赟 张建军 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第4期52-55,共4页
The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si (100) substrate. Here the direct epitaxial growth condition of 1.3μm InAs/OaAs quantu... The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si (100) substrate. Here the direct epitaxial growth condition of 1.3μm InAs/OaAs quantum on a Si substrate is further investigated using atomic force microscopy, etch pit density and temperature-dependent photoluminescence (PL) measurements. The PL for Si-based InAs/GaAs quantum dots appears to be very sensitive to the initial OaAs nucleation temperature and thickness with strongest room-temperature emission at 40000 (17Onto nucleation layer thickness), due to the lower density of defects generated under this growth condition, and stronger carrier confinement within the quantum dots. 展开更多
关键词 gaas INAS Temperature-Dependent Photoluminescence Characteristics of InAs/gaas quantum dots Directly Grown on Si Substrates of SI on
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Observation of Barrier-Induced Strain Relaxation in InGaAs/GaAs Single Quantum Wells
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作者 SHEN Wenzhong SHEN Xuechu +1 位作者 TANG Wenguo T.Andersson 《Chinese Physics Letters》 SCIE CAS CSCD 1994年第11期693-696,共4页
Resonably good agreement among the photoluminescence,absorption,in-plane photocurrent and theoretical calculation demonstrates the effect of GaAs barrier width on the strain in In_(0.20)Ga_(0.80)As/GaAs single quantum... Resonably good agreement among the photoluminescence,absorption,in-plane photocurrent and theoretical calculation demonstrates the effect of GaAs barrier width on the strain in In_(0.20)Ga_(0.80)As/GaAs single quantum wells.The strain of each sample has been deduced. 展开更多
关键词 ingaas/gaas quantum OBSERVATION
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Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots
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作者 Guo-Feng Wu Jun Wang +8 位作者 Wei-Rong Chen Li-Na Zhu Yuan-Qing Yang Jia-Chen Li Chun-Yang Xiao Yong-Qing Huang Xiao-Min Ren Hai-Ming Ji Shuai Luo 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第11期146-150,共5页
The threading dislocations(TDs)in GaAs/Si epitaxial layers due to the lattice mismatch seriously degrade the performance of the lasers grown on silicon.The insertion of InAs quantum dots(QDs)acting as dislocation filt... The threading dislocations(TDs)in GaAs/Si epitaxial layers due to the lattice mismatch seriously degrade the performance of the lasers grown on silicon.The insertion of InAs quantum dots(QDs)acting as dislocation filters is a pretty good alternative to solving this problem.In this paper,a finite element method(FEM)is proposed to calculate the critical condition for InAs/GaAs QDs bending TDs into interfacial misfit dislocations(MDs).Making a comparison of elastic strain energy between the two isolated systems,a reasonable result is obtained.The effect of the cap layer thickness and the base width of QDs on TD bending are studied,and the results show that the bending area ratio of single QD(the bending area divided by the area of the QD base)is evidently affected by the two factors.Moreover,we present a method to evaluate the bending capability of single-layer QDs and multi-layer QDs.For the QD with 24-nm base width and 5-nm cap layer thickness,taking the QD density of 10^(11) cm^(-2) into account,the bending area ratio of single-layer QDs(the area of bending TD divided by the area of QD layer)is about 38.71%.With inserting five-layer InAs QDs,the TD density decreases by 91.35%.The results offer the guidelines for designing the QD dislocation filters and provide an important step towards realizing the photonic integration circuits on silicon. 展开更多
关键词 InAs/gaas quantum dots threading dislocation finite element method bending area
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Single-Photon Emission from GaAs Quantum Dots Embedded in Nanowires
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作者 杨爽 窦秀明 +4 位作者 喻颖 倪海桥 牛智川 江德生 孙宝权 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第7期198-201,共4页
A highly efficient single-photon source based on a semiconductor quantum dot (QD) is a promising candidate in quantum information processing. We report a single-photon source based on self-assembled GaAs QDs in nano... A highly efficient single-photon source based on a semiconductor quantum dot (QD) is a promising candidate in quantum information processing. We report a single-photon source based on self-assembled GaAs QDs in nanowires with an extraction efficiency of 14%. The second-order correlation function g(2) (0) at saturate excitation power is estimated to be 0.28. The measured polarization of QD emission depends on the geometric relations between the directions of PL collection and the long axis of nanowires. 展开更多
关键词 Single-Photon Emission from gaas quantum dots Embedded in Nanowires QDs
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Stable Temperature Characteristics of InAs/GaAs Quantum Dots at Long Wavelength Emission
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作者 KONGLing-min CAIJia-fa +2 位作者 WUZheng-yun GONGZheng NIUZhi-chuan 《Semiconductor Photonics and Technology》 CAS 2005年第2期78-80,115,共4页
The time-resolved photoluminescence and steady photoluminescence (TRPL and PL) spectra on self-assembled InAs/GaAs quantum dots (QDs) are investigated. By depositing GaAs/InAs short period superlattices (SLs), 1.48μm... The time-resolved photoluminescence and steady photoluminescence (TRPL and PL) spectra on self-assembled InAs/GaAs quantum dots (QDs) are investigated. By depositing GaAs/InAs short period superlattices (SLs), 1.48μm emission is obtained at room temperature. Temperature dependent PL measurements show that the PL intensity of the emission is very steady. It decays only to half as the temperature increases from 15K to room temperature, while at the same time, the intensity of the other emission decreases by a factor of 5 orders of magnitude. These two emissions are attributed to large-size QDs and short period superlattices (SLs), respectively. Large-size QDs are easier to capture and confine carriers, which benefits the lifetime of PL, and therefore makes the emission intensity insensitive to the temperature. 展开更多
关键词 InAs/gaas quantum dots Time-resolved spectra Carrier transportation
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Left-Handedness with Three Zero-Absorption Windows Tuned by the Incoherent Pumping Field and Inter-Dot Tunnelings in a GaAs/AlGaAs Triple Quantum Dots System
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作者 赵顺才 张双颖 +1 位作者 吴奇宣 贾靖 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第5期157-160,共4页
Left-handedness with three zero-absorption windows is achieved in a triple-quantum-dot system. With the typ- ical parameters of a GaAs/AlGaAs heterostructure, the simultaneous negative relative electric permittivity a... Left-handedness with three zero-absorption windows is achieved in a triple-quantum-dot system. With the typ- ical parameters of a GaAs/AlGaAs heterostructure, the simultaneous negative relative electric permittivity and magnetic permeability are obtained by the adjustable incoherent pumping field and two inter-dot tunnelings. Furthermore, three zero-absorption windows in the left-handedness frequency bands are observed. The left- handedness with zero-absorption in the solid state heterostrueture may solve the challenges not only in the left-handed materials achieved by the photonic resonant scheme but also in the application of negative refractive materials with a large amount of absorption. 展开更多
关键词 In Left-Handedness with Three Zero-Absorption Windows Tuned by the Incoherent Pumping Field and Inter-dot Tunnelings in a gaas/Algaas Triple quantum dots System
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InGaAs/GaAs应变量子阱的光谱研究 被引量:1
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作者 孔令民 蔡加法 +3 位作者 林雪娇 杨克勤 吴正云 沈文忠 《发光学报》 EI CAS CSCD 北大核心 2002年第6期549-553,共5页
分别用光致发光谱(PL)、光伏谱(PV)及时间分辨谱(TRPL)的方法,测量了应变InGaAs/GaAs单量子阱和多量子阱在不同温度下的光谱,发现单量子阱与多量子阱有不同的光学性质。多量子阱PL谱发光峰和PV谱激子峰的强度与半高宽都比单量子阱的大,... 分别用光致发光谱(PL)、光伏谱(PV)及时间分辨谱(TRPL)的方法,测量了应变InGaAs/GaAs单量子阱和多量子阱在不同温度下的光谱,发现单量子阱与多量子阱有不同的光学性质。多量子阱PL谱发光峰和PV谱激子峰的强度与半高宽都比单量子阱的大,但单量子阱的半高宽随着温度的升高增大很快,这是由激子 声子耦合引起的。通过时间分辨谱研究发现了量子阱子能级之间的跃迁,多量子阱的发光寿命明显比单量子阱的长。我们利用形变势模型对量子阱的能带进行了计算,很好地解释了实验结果。 展开更多
关键词 ingaas/gaas应变量子阱 光谱研究 时间分辨谱 光致发光谱 光伏谱 半导体材料 砷化镓 砷镓铟化合物 形态势模型
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InGaAs/GaAs/InGaP量子阱激光器的温度电压特性 被引量:3
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作者 李金友 王海龙 +4 位作者 杨锦 曹春芳 赵旭熠 于文富 龚谦 《发光学报》 EI CAS CSCD 北大核心 2020年第8期971-976,共6页
研究了InGaAs/GaAs/InGaP量子阱激光器在不同温度下的电流-电压特性,并建立了一个理论模型进行描述。实验所用激光器腔长为0.3 mm,脊条宽度为3μm。实验测量得到该激光器在15~100 K的电压温度系数(d V/d T)为7.87~8.32 mV/K,在100~300 ... 研究了InGaAs/GaAs/InGaP量子阱激光器在不同温度下的电流-电压特性,并建立了一个理论模型进行描述。实验所用激光器腔长为0.3 mm,脊条宽度为3μm。实验测量得到该激光器在15~100 K的电压温度系数(d V/d T)为7.87~8.32 mV/K,在100~300 K的电压温度系数为2.93~3.17 mV/K。由理论模型计算得到该激光器在15~100 K的电压温度系数为2.56~2.75 mV/K,在100~300 K的电压温度系数为3.91~4.15 mV/K。在100~300 K,实验测量与理论模型计算得出的电压温度系数接近,理论模型能较好地模拟激光器的温度电压特性;但在15~100 K相差较大,还需要进一步完善。 展开更多
关键词 量子阱激光器 ingaas/gaas/InGaP 低温 温度电压特性
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InGaAs/GaAs应变量子阱结构在1054nm激光器中的应用 被引量:2
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作者 刘安平 韩伟峰 +1 位作者 黄茂 罗庆春 《强激光与粒子束》 EI CAS CSCD 北大核心 2010年第7期1665-1667,共3页
采用金属有机物化学气相淀积(MOCVD)方法生长了InGaAs/GaAs应变量子阱,通过优化生长条件和采用应变缓冲层结构获得量子阱,将该量子阱结构应用于1 054 nm激光器的制备。经测试该器件具有9 mA低阈值电流和0.4 W/A较高的单面斜率效率,在驱... 采用金属有机物化学气相淀积(MOCVD)方法生长了InGaAs/GaAs应变量子阱,通过优化生长条件和采用应变缓冲层结构获得量子阱,将该量子阱结构应用于1 054 nm激光器的制备。经测试该器件具有9 mA低阈值电流和0.4 W/A较高的单面斜率效率,在驱动电流为50 mA时测得该应变量子阱光谱半宽为1.6nm,发射波长为1 054 nm。实验表明:通过优化工艺条件和采用应变缓冲层等手段,改善了应变量子阱质量,该结果应用于1 054 nm激光器的制备,取得了较好的结果。 展开更多
关键词 金属有机物 化学气相淀积 应变量子阱 半导体激光器
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InGaAs/GaAs自组织量子点光致发光特性研究 被引量:1
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作者 牛智川 王晓东 +1 位作者 苗振华 封松林 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2001年第1期20-24,共5页
用 PL谱测试研究了 Ga As和不同 In组份 Inx Ga1 - x As(x=0 .1,0 .2 ,0 .3)覆盖层对分子束外延生长的 In As/Ga As自组织量子点发光特性的影响 .用 Inx Ga1 - x As外延层覆盖 In As/ Ga As量子点 ,比用 Ga As做覆盖层其发光峰能量向低... 用 PL谱测试研究了 Ga As和不同 In组份 Inx Ga1 - x As(x=0 .1,0 .2 ,0 .3)覆盖层对分子束外延生长的 In As/Ga As自组织量子点发光特性的影响 .用 Inx Ga1 - x As外延层覆盖 In As/ Ga As量子点 ,比用 Ga As做覆盖层其发光峰能量向低能端移动 ,发光峰半高宽变窄 ,量子点发光峰能量随温度的红移幅度变小 .理论计算证实这是由于覆盖层 Inx Ga1 - x As减小了 In As表面应力导致发光峰红移 ,而 In元素有效抑制了 In As/ Ga As界面组份的混杂 ,量子点的均匀性得到改善 ,PL 谱半高宽变窄 .用 In Ga As覆盖的 In0 .5 Ga0 .5 As/ Ga As自组织量子点实现了 1.3μm发光 ,室温下 PL谱半高宽为 19.2 me V。 展开更多
关键词 InAs/gaas自组织量子点 分子束外延 ingaas覆盖层 光荧光谱 发光峰红移 光致发光特性
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MBE生长InGaAs/GaAs(001)多层矩阵式量子点 被引量:1
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作者 周清 刘珂 +3 位作者 罗子江 郭祥 周勋 丁召 《功能材料》 EI CAS CSCD 北大核心 2013年第8期1128-1131,共4页
用分子束外延(MBE)设备以Stranski-Krastanov(S-K)生长模式,通过间歇式源中断方式外延生长了多个周期垂直堆垛的InGaAs量子点,首次获得大小及密度可调的In0.43Ga0.57As/GaAs(001)矩阵式量子点DWELL结构。样品外延结构大致为500nm的GaAs... 用分子束外延(MBE)设备以Stranski-Krastanov(S-K)生长模式,通过间歇式源中断方式外延生长了多个周期垂直堆垛的InGaAs量子点,首次获得大小及密度可调的In0.43Ga0.57As/GaAs(001)矩阵式量子点DWELL结构。样品外延结构大致为500nm的GaAs、多个周期循环堆垛InGaAs量子点和60ML的GaAs隔离层等。生长过程中用反射式高能电子衍射仪(RHEED)实时监控,样品经退火后使用扫描隧道显微镜(STM)进行表面形貌的表征。 展开更多
关键词 ingaas量子点 分子束外延 垂直堆垛 DWELL结构
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合金无序和界面不平整对InGaAs/GaAs应变量子阱光谱展宽的影响
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作者 徐强 徐仲英 +1 位作者 郑宝真 许继宗 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1990年第6期403-409,共7页
用光荧光和光吸收的实验方法研究了InGaAs/GaAs应变量子阱低温下的光谱展宽机理。实验观察到激子谱线半宽随着InGaAs层厚度和In的组分增加而增大。采用有效晶体近似的方法分析了实验数据,发现样品中合金组合无序引起的激子谱线展宽是主... 用光荧光和光吸收的实验方法研究了InGaAs/GaAs应变量子阱低温下的光谱展宽机理。实验观察到激子谱线半宽随着InGaAs层厚度和In的组分增加而增大。采用有效晶体近似的方法分析了实验数据,发现样品中合金组合无序引起的激子谱线展宽是主要的光谱展宽机理。实验中还发现与轻空穴有关的吸收光谱结构在升温过程中由吸收峰变为台阶状的谱结构。该现象可用与轻空穴有关的吸收为空间间接跃过来解释。 展开更多
关键词 ingaas/gaas 量子阱 光谱特性
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InGaAs/GaAs多量子阱近红外光探测结构设计与表征 被引量:1
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作者 李林森 汪涛 朱喆 《电子技术应用》 2021年第7期118-124,共7页
介绍了用于近红外光探测的InGaAs三元化合物材料体系,并通过数学软件编写求解出InGaAs/GaAs单量子阱有限深势阱的波函数方程。根据计算结果,设计出InGaAs/GaAs多量子阱结构,之后采用分子束外延技术完成了高质量外延片结构的研制,通过双... 介绍了用于近红外光探测的InGaAs三元化合物材料体系,并通过数学软件编写求解出InGaAs/GaAs单量子阱有限深势阱的波函数方程。根据计算结果,设计出InGaAs/GaAs多量子阱结构,之后采用分子束外延技术完成了高质量外延片结构的研制,通过双晶X射线衍射等分析手段,推算出多量子阱结构中In的组分,势垒与势阱的厚度等参数与理论设计一致,具有很好的近红外探测器研制价值。 展开更多
关键词 ingaas/gaas 多量子阱 红外
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