Single-photon detectors(SPDs)are the most sensitive instruments for light detection.In the near-infrared range,SPDs based on III–V compound semiconductor avalanche photodiodes have been extensively used during the pa...Single-photon detectors(SPDs)are the most sensitive instruments for light detection.In the near-infrared range,SPDs based on III–V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size,low cost and easy operation.In the past decade,the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques.This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications,and particularly to highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes.Future perspectives of both the devices and quenching techniques are summarized.展开更多
InGaAs/InP avalanche photodiodes typically work in the gated Geiger mode to achieve near-infrared singlephoton detection. By using ultrashort gates and combining with the robust spike-canceling technique that consists...InGaAs/InP avalanche photodiodes typically work in the gated Geiger mode to achieve near-infrared singlephoton detection. By using ultrashort gates and combining with the robust spike-canceling technique that consists of the capacitance-balancing and low-pass filtering technique, we demonstrate an InGaAs/InP single-photon detector(SPD) with widely tunable repetition rates in this paper. The operation frequency could be tuned conveniently from 100 MHz to 1.25 GHz with the SPD's performance measured to maintain good performance, making it quite suitable for quantum key distribution, laser ranging, and optical time domain reflectometry. Furthermore,the SPD exhibited extremely low-noise characteristics. The detection efficiency of this SPD could reach 20% with the dark count rate of 2.5 × 10^(-6)∕gate and after-pulse probability of 4.1% at 1 GHz.展开更多
A Schottky barrier diode with low-barrier is presented, based on which a terahertz waveguide detector working at 500-600 GHz is designed and fabricated. By using the InGaAs/InP material system, the feature of the low ...A Schottky barrier diode with low-barrier is presented, based on which a terahertz waveguide detector working at 500-600 GHz is designed and fabricated. By using the InGaAs/InP material system, the feature of the low barrier is obtained which greatly improves the performance of the detector. The measured typical voltage responsivity is about 900 V/W at 50-560 OHz and is about 400 V/W at 560 600 GHz. The proposed broadband waveguide detector has the characteristics of simple structure, compact size, low cost and high performance, and can be used in a variety of applications such as imaging, moleeuIar spectroscopy and atmospheric remote sensing.展开更多
基金Supported by the National Natural Science Foundation of China(12027805,62171136,62174166,U2241219)the Science and Technology Commission of Shanghai Municipality(2019SHZDZX01,22JC1402902)the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB43010200)。
基金We acknowledge Wen-Hao Jiang for technical assistance.This work has been financially supported by the National Basic Research Program of China(Grant No.2013CB336800)the National High-Tech R&D Program(Grant No.2011AA010802)+1 种基金the National Natural Science Foundation of China(Grant No.61275121)the Innovative Cross-disciplinary Team Program of CAS.HZ acknowledges the financial support from the Swiss NCCR QSIT.
文摘Single-photon detectors(SPDs)are the most sensitive instruments for light detection.In the near-infrared range,SPDs based on III–V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size,low cost and easy operation.In the past decade,the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques.This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications,and particularly to highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes.Future perspectives of both the devices and quenching techniques are summarized.
基金National Natural Science Foundation of China(NSFC)(11404212,11604209,61127014)National Key Scientific Instrument Project(2012YQ150092)+1 种基金Shanghai Science and Technology Foundation(16JC1400404)Hujiang Foundation of China(D15014)
文摘InGaAs/InP avalanche photodiodes typically work in the gated Geiger mode to achieve near-infrared singlephoton detection. By using ultrashort gates and combining with the robust spike-canceling technique that consists of the capacitance-balancing and low-pass filtering technique, we demonstrate an InGaAs/InP single-photon detector(SPD) with widely tunable repetition rates in this paper. The operation frequency could be tuned conveniently from 100 MHz to 1.25 GHz with the SPD's performance measured to maintain good performance, making it quite suitable for quantum key distribution, laser ranging, and optical time domain reflectometry. Furthermore,the SPD exhibited extremely low-noise characteristics. The detection efficiency of this SPD could reach 20% with the dark count rate of 2.5 × 10^(-6)∕gate and after-pulse probability of 4.1% at 1 GHz.
基金Supported by the National High-Technology Research and Development Program of China under Grant No 2011AA010203the National Basic Research Program of China under Grant Nos 2011CB201704 and 2010CB327502the National Natural Science Foundation of China under Grant No 61434006
文摘A Schottky barrier diode with low-barrier is presented, based on which a terahertz waveguide detector working at 500-600 GHz is designed and fabricated. By using the InGaAs/InP material system, the feature of the low barrier is obtained which greatly improves the performance of the detector. The measured typical voltage responsivity is about 900 V/W at 50-560 OHz and is about 400 V/W at 560 600 GHz. The proposed broadband waveguide detector has the characteristics of simple structure, compact size, low cost and high performance, and can be used in a variety of applications such as imaging, moleeuIar spectroscopy and atmospheric remote sensing.
