现有1.0 eV/0.75 eV InGaAsP/InGaAs双结太阳电池的开路电压小于各子电池的开路电压之和,鲜有研究探索开路电压损耗的来源以及如何抑制。通过研究发现,InGaAs底电池背场/基区界面处的少数载流子输运的主要机制是热离子发射,而不是缺陷...现有1.0 eV/0.75 eV InGaAsP/InGaAs双结太阳电池的开路电压小于各子电池的开路电压之和,鲜有研究探索开路电压损耗的来源以及如何抑制。通过研究发现,InGaAs底电池背场/基区界面处的少数载流子输运的主要机制是热离子发射,而不是缺陷诱导复合。SIMS测试表明,采用InP或InAlAs背场均不能有效抑制Zn掺杂剂的扩散。此外,由于生长过程中持续的高温热处理,Ⅲ-Ⅴ族主元素在界面处发生了热扩散。为了抑制上述现象,提出了一种新型InP/InAlAs超晶格背场,并应用到InGaAs底电池中。制备得到的双结太阳电池在维持短路电流密度不变的情况下,开路电压提升到997.5 mV,与传统采用InP背场的双结太阳电池相比,开路电压损耗降低了30 mV。该研究成果对提升四结太阳电池的整体开路电压有重要意义。展开更多
GSMBE grown 1 84 micron wavelength InGaAs/InGaAsP/InP strained quantum well lasers are reported. Lasers with 800 micron long cavity and 40 micron wide planar electrical stripe have been operated under the pulsed r...GSMBE grown 1 84 micron wavelength InGaAs/InGaAsP/InP strained quantum well lasers are reported. Lasers with 800 micron long cavity and 40 micron wide planar electrical stripe have been operated under the pulsed regime at room temperature. At 20℃, the threshold current density is 3 8kA/cm 2 and the external different quantum efficiency is 9 3%.展开更多
基金the National Nature Science Foundation of China(61474076 and 61704106)the Young Elite Scientist Sponsorship Program by China Association for Science and Technology(2017QNRC001)Shanghai Rising-Star Program(18QB1402500 and 19QB1403800).
文摘现有1.0 eV/0.75 eV InGaAsP/InGaAs双结太阳电池的开路电压小于各子电池的开路电压之和,鲜有研究探索开路电压损耗的来源以及如何抑制。通过研究发现,InGaAs底电池背场/基区界面处的少数载流子输运的主要机制是热离子发射,而不是缺陷诱导复合。SIMS测试表明,采用InP或InAlAs背场均不能有效抑制Zn掺杂剂的扩散。此外,由于生长过程中持续的高温热处理,Ⅲ-Ⅴ族主元素在界面处发生了热扩散。为了抑制上述现象,提出了一种新型InP/InAlAs超晶格背场,并应用到InGaAs底电池中。制备得到的双结太阳电池在维持短路电流密度不变的情况下,开路电压提升到997.5 mV,与传统采用InP背场的双结太阳电池相比,开路电压损耗降低了30 mV。该研究成果对提升四结太阳电池的整体开路电压有重要意义。
文摘GSMBE grown 1 84 micron wavelength InGaAs/InGaAsP/InP strained quantum well lasers are reported. Lasers with 800 micron long cavity and 40 micron wide planar electrical stripe have been operated under the pulsed regime at room temperature. At 20℃, the threshold current density is 3 8kA/cm 2 and the external different quantum efficiency is 9 3%.
