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Green Vertical‑Cavity Surface‑Emitting Lasers Based on InGaN Quantum Dots and Short Cavity 被引量:2
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作者 Tao Yang Yan‑Hui Chen +7 位作者 Ya‑Chao Wang Wei Ou Lei‑Ying Ying Yang Mei Ai‑Qin Tian Jian‑Ping Liu Hao‑Chung Guo Bao‑Ping Zhang 《Nano-Micro Letters》 SCIE EI CAS CSCD 2023年第12期115-125,共11页
Room temperature low threshold lasing of green GaNbased vertical cavity surface emitting laser(VCSEL)was demonstrated under continuous wave(CW)operation.By using self-formed InGaN quantum dots(QDs)as the active region... Room temperature low threshold lasing of green GaNbased vertical cavity surface emitting laser(VCSEL)was demonstrated under continuous wave(CW)operation.By using self-formed InGaN quantum dots(QDs)as the active region,the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm^(-2),the lowest ever reported.The QD epitaxial wafer featured with a high IQE of 69.94%and theδ-function-like density of states plays an important role in achieving low threshold current.Besides,a short cavity of the device(~4.0λ)is vital to enhance the spontaneous emission coupling factor to 0.094,increase the gain coefficient factor,and decrease the optical loss.To improve heat dissipation,AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding.The results provide important guidance to achieving high performance GaN-based VCSELs. 展开更多
关键词 Green vertical cavity surface emitting laser GaN Low threshold ingan quantum dots
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Size-dependent optical properties of InGaN quantum dots in GaN nanowires grown by MBE
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作者 Yanxiong E Zhibiao HAO +7 位作者 Jiadong YU Chao WU Lai WANG Bing XIONG Jian WANG Yanjun HAN Changzheng SUN Yi LUO 《Frontiers of Optoelectronics》 EI CSCD 2016年第2期318-322,共5页
Quantum dots in nanowires (DINWs) are considered as important building blocks for novel nanoscale semiconductor optoelectronic devices. In this paper, pure axial heterojunction InGaN/GaN DINWs are grown by using pla... Quantum dots in nanowires (DINWs) are considered as important building blocks for novel nanoscale semiconductor optoelectronic devices. In this paper, pure axial heterojunction InGaN/GaN DINWs are grown by using plasma-assisted molecular beam epitaxy (PA-MBE) system. The InGaN quantum dots (QDs) are disk-like observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The diameter of QDs can be controlled by the growth conditions of nanowires (NWs), while the thickness of QDs can be controlled by the growth time of lnGaN. Temperature-dependent photoluminescence (TDPL) measurements demonstrate that the PL peak of DINWs with small and uniform sizes shows a general red shift with increasing temperature. However, the PL peak of D1NWs with non-uniform sizes shows an abnormal blue shift with increasing temperature, which is due to different internal quantum efficiencies of the DINWs with different sizes. 展开更多
关键词 ingan quantum dots (QDs) nanowires(NWs) photoluminescence (PL) molecular beam epitaxy(MBE)
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