InGaN-based green light-emitting diodes （LEDs） with different growth temperatures of superlattice grown on Si （111） substrates are investigated by temperature-dependent electroluminescence between 100 K and 350K. ...InGaN-based green light-emitting diodes （LEDs） with different growth temperatures of superlattice grown on Si （111） substrates are investigated by temperature-dependent electroluminescence between 100 K and 350K. It is observed that with the decrease of the growth temperature of the superlattice from 895℃ to 855℃, the forward voltage decreases, especially at low temperature. We presume that this is due to the existence of the larger average size of V-shaped pits, which is determined by secondary ion mass spectrometer measurements. Meanwhile, the sample with higher growth temperature of superlattice shows a severer efficiency droop at cryogenic temperatures （about 100 K-150 K）. Electron overflow into p-GaN is considered to be the cause of such phenomena, which is relevant to the poorer hole injection into multiple quantum wells and the more reduced effective active volume in the active region.展开更多
Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices.In this paper, we first report the use of the nanoporous GaN (NP-GaN) DBR as a template for regrowth of InGaN-...Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices.In this paper, we first report the use of the nanoporous GaN (NP-GaN) DBR as a template for regrowth of InGaN-based light-emitting diodes (LEDs). The wafer-scale NP-GaN DBR, which is fabricated by electrochemical etching in a neutral solution, has a smooth surface, high reflectivity (>99.5%), and wide spectral stop band width (>70 nm). The chemical composition of the regrown LED thin film is similar to that of the reference LED, but the photoluminescence (PL) lifetime, PL intensity, and electroluminescence intensity of the LED with the DBR are enhanced several times compared to those of the reference LED. The intensity enhancement is attributed to the light reflection effect of the NP-GaN DBR and improved crystalline quality as a result of the etching scheme, whereas the enhancement of PL lifetime is attributable to the latter.展开更多
针对强日光环境下OCC(Optical Camera Communication)系统接收端解码困难的问题,提出了基于分段式线性灰度变换的Gradient-Harris解码算法。首先搭建一套OCC实验系统,接收端相机采集原始图像,利用标准相关系数匹配方法提取目标LED阵列...针对强日光环境下OCC(Optical Camera Communication)系统接收端解码困难的问题,提出了基于分段式线性灰度变换的Gradient-Harris解码算法。首先搭建一套OCC实验系统,接收端相机采集原始图像,利用标准相关系数匹配方法提取目标LED阵列区域。其次通过分段式线性灰度变换对目标LED阵列区域进行图像增强,利用Gradient-Harris解码算法进行目标LED阵列的形状提取和状态识别。实验结果表明,应用基于分段式线性灰度变换的Gradient-Harris解码算法,强日光环境下OCC实验系统的平均解码速率为128.08 bit/s,平均误码率为4.38×10^(-4),最大通信距离为55 m。展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61334001the National Key Research and Development Program of China under Grant Nos 2016YFB0400600,2016YFB0400601 and 2016YFB0400100+1 种基金the National Science Foundation for Young Scientists of China under Grant No 21405076the Fund for Less Developed Regions of the National Natural Science Foundation of China under Grant No 11364034
文摘InGaN-based green light-emitting diodes （LEDs） with different growth temperatures of superlattice grown on Si （111） substrates are investigated by temperature-dependent electroluminescence between 100 K and 350K. It is observed that with the decrease of the growth temperature of the superlattice from 895℃ to 855℃, the forward voltage decreases, especially at low temperature. We presume that this is due to the existence of the larger average size of V-shaped pits, which is determined by secondary ion mass spectrometer measurements. Meanwhile, the sample with higher growth temperature of superlattice shows a severer efficiency droop at cryogenic temperatures （about 100 K-150 K）. Electron overflow into p-GaN is considered to be the cause of such phenomena, which is relevant to the poorer hole injection into multiple quantum wells and the more reduced effective active volume in the active region.
基金National Natural Science Foundation of China (NSFC) (61376069,11775134)Key Research and Development Plan of Shandong Province,China (2018GGX102024,2018GGX102014)
文摘Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices.In this paper, we first report the use of the nanoporous GaN (NP-GaN) DBR as a template for regrowth of InGaN-based light-emitting diodes (LEDs). The wafer-scale NP-GaN DBR, which is fabricated by electrochemical etching in a neutral solution, has a smooth surface, high reflectivity (>99.5%), and wide spectral stop band width (>70 nm). The chemical composition of the regrown LED thin film is similar to that of the reference LED, but the photoluminescence (PL) lifetime, PL intensity, and electroluminescence intensity of the LED with the DBR are enhanced several times compared to those of the reference LED. The intensity enhancement is attributed to the light reflection effect of the NP-GaN DBR and improved crystalline quality as a result of the etching scheme, whereas the enhancement of PL lifetime is attributable to the latter.
文摘针对强日光环境下OCC(Optical Camera Communication)系统接收端解码困难的问题,提出了基于分段式线性灰度变换的Gradient-Harris解码算法。首先搭建一套OCC实验系统,接收端相机采集原始图像,利用标准相关系数匹配方法提取目标LED阵列区域。其次通过分段式线性灰度变换对目标LED阵列区域进行图像增强,利用Gradient-Harris解码算法进行目标LED阵列的形状提取和状态识别。实验结果表明,应用基于分段式线性灰度变换的Gradient-Harris解码算法,强日光环境下OCC实验系统的平均解码速率为128.08 bit/s,平均误码率为4.38×10^(-4),最大通信距离为55 m。
