Heterojunction bipolar transistor (HBT) is of great interest for the application to microwave power and analog circuits. As known, decreasing bandgap energy of the base layer in HBT can result in a smaller turn-on vol...Heterojunction bipolar transistor (HBT) is of great interest for the application to microwave power and analog circuits. As known, decreasing bandgap energy of the base layer in HBT can result in a smaller turn-on voltage. Using InGaAs as a base material in GaAs HBT is a possible approach to achieve the aim. In this work, a novel InGaP/InGaAs/GaAs double heterojunction bipolar transistor (DHBT) structure with an InGaAs base was designed and grown by gas source molecular beam epitaxy (GSMBE). High-quality InGaAs/GaAs hetero epi-layers and a good doping figure were obtained through optimizing the layer structure and the growth condition. The DHBT devices of a 120 μm×120 μm emitter area were fabricated by normal process and the good DC performance was obtained. A breakdown voltage of 10 V and an offset voltage of just 0.4 V were achieved. These results indicate that the InGaP/InGaAs/GaAs DHBT is suitable for low power-dissipation and high power applications.展开更多
An extraction method of the component parameter values of an enhancement-mode InGaP/AIGaAs/In-GaAs PHEMT small signal equivalent circuit is presented,and these component parameter values are extracted by using the EEH...An extraction method of the component parameter values of an enhancement-mode InGaP/AIGaAs/In-GaAs PHEMT small signal equivalent circuit is presented,and these component parameter values are extracted by using the EEHEMT1 model of IC-CAP software. The extraction results are verified by ADS software,and the DC I-V curves and S parameters simulated by ADS are basically accordant with those of the test results. These results indicate that the EEHEMT1 model can be used for extracting the component parameters of an enhancement-mode PHEMT.展开更多
For enhancement-mode InGaP/A1GaAs/InGaAs PHEMTs,gate annealing is conducted between gate structures of Ti/Pt/Au and Pt/Ti/Pt/Au. Comparison is made after thermal annealing and an optimum annealing process is ob- taine...For enhancement-mode InGaP/A1GaAs/InGaAs PHEMTs,gate annealing is conducted between gate structures of Ti/Pt/Au and Pt/Ti/Pt/Au. Comparison is made after thermal annealing and an optimum annealing process is ob- tained. Using the structure of Ti/Pt/Au, about a 200mV positive shift of threshold voltage is achieved by thermal annea- ling at 320℃ for 40min in N2 ambient. Finally, a stable and consistent enhancement-mode PHEMT is produced successfully with higher threshold voltage.展开更多
The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribu...The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribution of its electric field.Regarding the issue of accurately predicting the depth of diffusion in InGaAs/InP SPAD,simulation analysis and device development were carried out,focusing on the dual diffusion behavior of zinc atoms.A formula of X_(j)=k√t-t_(0)+c to quantitatively predict the diffusion depth is obtained by fitting the simulated twice-diffusion depths based on a two-dimensional(2D)model.The 2D impurity morphologies and the one-dimensional impurity profiles for the dual-diffused region are characterized by using scanning electron micros-copy and secondary ion mass spectrometry as a function of the diffusion depth,respectively.InGaAs/InP SPAD devices with different dual-diffusion conditions are also fabricated,which show breakdown behaviors well consis-tent with the simulated results under the same junction geometries.The dark count rate(DCR)of the device de-creased as the multiplication width increased,as indicated by the results.DCRs of 2×10^(6),1×10^(5),4×10^(4),and 2×10^(4) were achieved at temperatures of 300 K,273 K,263 K,and 253 K,respectively,with a bias voltage of 3 V,when the multiplication width was 1.5µm.These results demonstrate an effective prediction route for accu-rately controlling the dual-diffused zinc junction geometry in InP-based planar device processing.展开更多
Positive bias temperature instability stress induced interface trap density in a buried InGaAs channel metaloxide-semiconductor field-effect transistor with a InCaP barrier layer and Al2O3 dielectric is investigated. ...Positive bias temperature instability stress induced interface trap density in a buried InGaAs channel metaloxide-semiconductor field-effect transistor with a InCaP barrier layer and Al2O3 dielectric is investigated. Well behaved split C-V characteristics with small capacitance frequency dispersion are confirmed after the insertion of the InCaP barrier layer. The direct-current Id-Vg measurements show both degradations of positive gate voltage shift and sub-threshold swing in the sub-threshold region, and degradation of positive △Vg in the oncurrent region. The Id-Vg degradation during the positive bias temperature instability tests is mainly contributed by the generation of near interface acceptor traps under stress. Specifically, the stress induced aeceptor traps contain both permanent and recoverable traps. Compared with surface channel InCaAs devices, stress induced recoverable donor traps are negligible in the buried channel ones.展开更多
短波红外InGaAs焦平面探测器具有探测率高、均匀性好等优点,在航天遥感、微光夜视、医疗诊断等领域具有广泛应用。近十年来,中国科学院上海技术物理研究所围绕高灵敏度常规波长(0.9~1.7μm)InGaAs焦平面、延伸波长(1.0~2.5μm)InGaAs焦...短波红外InGaAs焦平面探测器具有探测率高、均匀性好等优点,在航天遥感、微光夜视、医疗诊断等领域具有广泛应用。近十年来,中国科学院上海技术物理研究所围绕高灵敏度常规波长(0.9~1.7μm)InGaAs焦平面、延伸波长(1.0~2.5μm)InGaAs焦平面以及新型多功能InGaAs探测器取得了良好进展。在常规波长InGaAs焦平面方面,从256×1、512×1元等线列向320×256、640×512、4000×128、1280×10^24元等多种规格面阵方面发展,室温暗电流密度优于5 n A/cm2,室温峰值探测率优于5×10^12cm·Hz1/2/W。在延伸波长InGaAs探测器方面,发展了高光谱高帧频10^24×256、10^24×512元焦平面,暗电流密度优于10 n A/cm^2和峰值探测率优于5×10^11cm·Hz1/2/W@200 K。在新型多功能InGaAs探测器方面,发展了一种可见近红外响应的InGaAs探测器,通过具有阻挡层结构的新型外延材料和片上集成微纳陷光结构,实现0.4~1.7μm宽谱段响应,研制的320×256、640×512焦平面组件的量子效率达到40%@0.5 m、80%@0.8 m、90%@1.55 m;发展了片上集成亚波长金属光栅的InGaAs偏振探测器,其在0°、45°、90°、135°的消光比优于20:1。展开更多
文摘Heterojunction bipolar transistor (HBT) is of great interest for the application to microwave power and analog circuits. As known, decreasing bandgap energy of the base layer in HBT can result in a smaller turn-on voltage. Using InGaAs as a base material in GaAs HBT is a possible approach to achieve the aim. In this work, a novel InGaP/InGaAs/GaAs double heterojunction bipolar transistor (DHBT) structure with an InGaAs base was designed and grown by gas source molecular beam epitaxy (GSMBE). High-quality InGaAs/GaAs hetero epi-layers and a good doping figure were obtained through optimizing the layer structure and the growth condition. The DHBT devices of a 120 μm×120 μm emitter area were fabricated by normal process and the good DC performance was obtained. A breakdown voltage of 10 V and an offset voltage of just 0.4 V were achieved. These results indicate that the InGaP/InGaAs/GaAs DHBT is suitable for low power-dissipation and high power applications.
文摘An extraction method of the component parameter values of an enhancement-mode InGaP/AIGaAs/In-GaAs PHEMT small signal equivalent circuit is presented,and these component parameter values are extracted by using the EEHEMT1 model of IC-CAP software. The extraction results are verified by ADS software,and the DC I-V curves and S parameters simulated by ADS are basically accordant with those of the test results. These results indicate that the EEHEMT1 model can be used for extracting the component parameters of an enhancement-mode PHEMT.
文摘For enhancement-mode InGaP/A1GaAs/InGaAs PHEMTs,gate annealing is conducted between gate structures of Ti/Pt/Au and Pt/Ti/Pt/Au. Comparison is made after thermal annealing and an optimum annealing process is ob- tained. Using the structure of Ti/Pt/Au, about a 200mV positive shift of threshold voltage is achieved by thermal annea- ling at 320℃ for 40min in N2 ambient. Finally, a stable and consistent enhancement-mode PHEMT is produced successfully with higher threshold voltage.
基金Supported by the National Natural Science Foundation of China(12027805,62171136,62174166,U2241219)the Science and Technology Commission of Shanghai Municipality(2019SHZDZX01,22JC1402902)the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB43010200)。
基金Supported by Shanghai Natural Science Foundation(22ZR1472600).
文摘The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribution of its electric field.Regarding the issue of accurately predicting the depth of diffusion in InGaAs/InP SPAD,simulation analysis and device development were carried out,focusing on the dual diffusion behavior of zinc atoms.A formula of X_(j)=k√t-t_(0)+c to quantitatively predict the diffusion depth is obtained by fitting the simulated twice-diffusion depths based on a two-dimensional(2D)model.The 2D impurity morphologies and the one-dimensional impurity profiles for the dual-diffused region are characterized by using scanning electron micros-copy and secondary ion mass spectrometry as a function of the diffusion depth,respectively.InGaAs/InP SPAD devices with different dual-diffusion conditions are also fabricated,which show breakdown behaviors well consis-tent with the simulated results under the same junction geometries.The dark count rate(DCR)of the device de-creased as the multiplication width increased,as indicated by the results.DCRs of 2×10^(6),1×10^(5),4×10^(4),and 2×10^(4) were achieved at temperatures of 300 K,273 K,263 K,and 253 K,respectively,with a bias voltage of 3 V,when the multiplication width was 1.5µm.These results demonstrate an effective prediction route for accu-rately controlling the dual-diffused zinc junction geometry in InP-based planar device processing.
基金Supported by the National Science and Technology Major Project of China under Grant No 2011ZX02708-003the National Natural Science Foundation of China under Grant No 61504165the Opening Project of Key Laboratory of Microelectronics Devices and Integrated Technology of Institute of Microelectronics of Chinese Academy of Sciences
文摘Positive bias temperature instability stress induced interface trap density in a buried InGaAs channel metaloxide-semiconductor field-effect transistor with a InCaP barrier layer and Al2O3 dielectric is investigated. Well behaved split C-V characteristics with small capacitance frequency dispersion are confirmed after the insertion of the InCaP barrier layer. The direct-current Id-Vg measurements show both degradations of positive gate voltage shift and sub-threshold swing in the sub-threshold region, and degradation of positive △Vg in the oncurrent region. The Id-Vg degradation during the positive bias temperature instability tests is mainly contributed by the generation of near interface acceptor traps under stress. Specifically, the stress induced aeceptor traps contain both permanent and recoverable traps. Compared with surface channel InCaAs devices, stress induced recoverable donor traps are negligible in the buried channel ones.
文摘短波红外InGaAs焦平面探测器具有探测率高、均匀性好等优点,在航天遥感、微光夜视、医疗诊断等领域具有广泛应用。近十年来,中国科学院上海技术物理研究所围绕高灵敏度常规波长(0.9~1.7μm)InGaAs焦平面、延伸波长(1.0~2.5μm)InGaAs焦平面以及新型多功能InGaAs探测器取得了良好进展。在常规波长InGaAs焦平面方面,从256×1、512×1元等线列向320×256、640×512、4000×128、1280×10^24元等多种规格面阵方面发展,室温暗电流密度优于5 n A/cm2,室温峰值探测率优于5×10^12cm·Hz1/2/W。在延伸波长InGaAs探测器方面,发展了高光谱高帧频10^24×256、10^24×512元焦平面,暗电流密度优于10 n A/cm^2和峰值探测率优于5×10^11cm·Hz1/2/W@200 K。在新型多功能InGaAs探测器方面,发展了一种可见近红外响应的InGaAs探测器,通过具有阻挡层结构的新型外延材料和片上集成微纳陷光结构,实现0.4~1.7μm宽谱段响应,研制的320×256、640×512焦平面组件的量子效率达到40%@0.5 m、80%@0.8 m、90%@1.55 m;发展了片上集成亚波长金属光栅的InGaAs偏振探测器,其在0°、45°、90°、135°的消光比优于20:1。
