2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy（MBE）.The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at 77 K...2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy（MBE）.The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at 77 K.The optimal growth temperature of quantum wells is 440℃.The PL peak wavelength of quantum wells at 300 K is 1.98μm,and the FWHM is 115 nm.Tellurium-doped GaSb buffer layers were optimized by Hall measurement.The optimal doping concentration is 1.127×10^（18） cm^（-3） and the resistivity is 5.295×10^（-3）Ω·cm.展开更多
An InGaSb/A1GaAsSb compressively strained quantum well laser emitting at 2 #m has been fabricated. An output power of 82.2 mW was obtained in continuous wave （CW） mode at room temperature. The laser can operate at h...An InGaSb/A1GaAsSb compressively strained quantum well laser emitting at 2 #m has been fabricated. An output power of 82.2 mW was obtained in continuous wave （CW） mode at room temperature. The laser can operate at high temperature （T = 80 °C）, with a maximum output power of 63.7 mW in CW mode.展开更多
基金Project supported by the Beijing Natural Science Foundation(No.4112058)the Science Foundation of the Chinese Academy of Sciences(No.CXJJ-11-M20)
文摘2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy（MBE）.The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at 77 K.The optimal growth temperature of quantum wells is 440℃.The PL peak wavelength of quantum wells at 300 K is 1.98μm,and the FWHM is 115 nm.Tellurium-doped GaSb buffer layers were optimized by Hall measurement.The optimal doping concentration is 1.127×10^（18） cm^（-3） and the resistivity is 5.295×10^（-3）Ω·cm.
基金Project supported by the Beijing Natural Science Foundation,China(No.4112058)the Science Foundation of the Chinese Academy of Sciences(No.CXJJ-11-M20)
文摘An InGaSb/A1GaAsSb compressively strained quantum well laser emitting at 2 #m has been fabricated. An output power of 82.2 mW was obtained in continuous wave （CW） mode at room temperature. The laser can operate at high temperature （T = 80 °C）, with a maximum output power of 63.7 mW in CW mode.
