The fact that InN has a direct bandgap of 0.75eV enables InN-based nitrides devices to cover the wavelength range from UV region to 1.8μm, therefore, emerging as a new material system for optical communication applic...The fact that InN has a direct bandgap of 0.75eV enables InN-based nitrides devices to cover the wavelength range from UV region to 1.8μm, therefore, emerging as a new material system for optical communication applications.展开更多
文摘The fact that InN has a direct bandgap of 0.75eV enables InN-based nitrides devices to cover the wavelength range from UV region to 1.8μm, therefore, emerging as a new material system for optical communication applications.
