In this Letter, the loss and gain characteristics of an unconventional InxGa1-xAs∕Ga As asymmetrical step well structure consisting of variable indium contents of InxGa1-xAs materials are measured and analyzed for th...In this Letter, the loss and gain characteristics of an unconventional InxGa1-xAs∕Ga As asymmetrical step well structure consisting of variable indium contents of InxGa1-xAs materials are measured and analyzed for the first time, to the best of our knowledge. This special well structure is formed based on the indium-rich effect from the material growth process. The loss and gain are obtained by optical pumping and photoluminescence（PL）spectrum measurement at dual facets of an edge-emitting device. Unlike conventional quasi-rectangle wells, the asymmetrical step well may lead to a hybrid strain configuration containing both compressive and tensile strains and, thus, special loss and gain characteristics. The results will be very helpful in the development of multiple wavelength In Ga As-based semiconductor lasers.展开更多
We report on fabrication and photovoltaic characteristics of InxGa1-xN/GaN multiple quantum well solar cells with different indium compositions and barrier thicknesses. The as-grown samples are characterized by high- ...We report on fabrication and photovoltaic characteristics of InxGa1-xN/GaN multiple quantum well solar cells with different indium compositions and barrier thicknesses. The as-grown samples are characterized by high- resolution x-ray diffraction and reciprocal space mapping. The results show that the sample with a thick barrier thickness （lO.Onm） and high indium composition （0.23） has better crystalline quality. In addition, the dark current density-voltage （J-V） measurement of this device shows a significant decrease of leakage current, which leads to high open-circuit voltage Vow. Through the J-V characteristics under an Air Mass 1.5 Global （AM 1.5 G） illumination, this device exhibits a Voc of 1.89 V, a short-circuit current density Ysc of 3.92mA/cm2 and a fill factor of 50.96%. As a result, the conversion efficiency （77） is enhanced to be 3.77% in comparison with other devices.展开更多
基金supported by the National Natural Science Foundation of China under Grant Nos.61376067 and61474118
文摘In this Letter, the loss and gain characteristics of an unconventional InxGa1-xAs∕Ga As asymmetrical step well structure consisting of variable indium contents of InxGa1-xAs materials are measured and analyzed for the first time, to the best of our knowledge. This special well structure is formed based on the indium-rich effect from the material growth process. The loss and gain are obtained by optical pumping and photoluminescence（PL）spectrum measurement at dual facets of an edge-emitting device. Unlike conventional quasi-rectangle wells, the asymmetrical step well may lead to a hybrid strain configuration containing both compressive and tensile strains and, thus, special loss and gain characteristics. The results will be very helpful in the development of multiple wavelength In Ga As-based semiconductor lasers.
基金Supported by the National Basic Research Program of China(No 2012CB619303)the National High-Technology Research and Development Program of China(No 2011AA050514)
文摘We report on fabrication and photovoltaic characteristics of InxGa1-xN/GaN multiple quantum well solar cells with different indium compositions and barrier thicknesses. The as-grown samples are characterized by high- resolution x-ray diffraction and reciprocal space mapping. The results show that the sample with a thick barrier thickness （lO.Onm） and high indium composition （0.23） has better crystalline quality. In addition, the dark current density-voltage （J-V） measurement of this device shows a significant decrease of leakage current, which leads to high open-circuit voltage Vow. Through the J-V characteristics under an Air Mass 1.5 Global （AM 1.5 G） illumination, this device exhibits a Voc of 1.89 V, a short-circuit current density Ysc of 3.92mA/cm2 and a fill factor of 50.96%. As a result, the conversion efficiency （77） is enhanced to be 3.77% in comparison with other devices.
