It is generally considered that the hydrogenation of CO2 is the critical bottleneck of the CO2 electroreduction.In this work,with the aid of density functional theory(DFT)calculations,the catalytic hydrogenation of CO...It is generally considered that the hydrogenation of CO2 is the critical bottleneck of the CO2 electroreduction.In this work,with the aid of density functional theory(DFT)calculations,the catalytic hydrogenation of CO2 molecules over Indium-doped SnP3 catalyst were systematically studied.Through doping with indium(In)atom,the energy barrier of CO2 protonation is reduced and OCHO*species could easily be generated.This is mainly due to the p orbital of In exhibits strong hybridization with the p orbital of O,indicating that there is a strong interaction between OCHO*and In-doped SnP3 catalyst.As a result,In-doped SnP3 possesses high-efficiency and high-selectivity for converting CO2 into HCOOH with a low limiting potential of-0.17 V.Our findings will offer theoretical guidance to CO2 electroreduction.展开更多
Nanocrystalline In_2O_3 was synthesized through a controllable solvothermal process in one-step at 210℃for 24 h. Gas sensing properties were tested by mixing gas in air in static state.At 268.5℃,the nanocrystal show...Nanocrystalline In_2O_3 was synthesized through a controllable solvothermal process in one-step at 210℃for 24 h. Gas sensing properties were tested by mixing gas in air in static state.At 268.5℃,the nanocrystal showed high sensitivity to LPG but lower sensitivity to H_2 and CO.In order to enhance the sensitivities to H_2 and CO,0.5 mass % Au and Pd were doped by an impregnation process.The sensitivities to H_2 and CO were increased under different working temperature.Au-doped In_2O_3 was superior to Pd-doped In_2O_3 whatever to H_2 or CO;the sensitivity was increased with the increase of working temperature;gas sensing properties to H_2 overmatched to CO.展开更多
We report on the performance of La203/InA1N/GaN metal-oxide-semiconductor high electron mobility transistors （MOSHEMTs） and InA1N/GaN high electron mobility transistors （HEMTs）. The MOSHEMT presents a maximum drai...We report on the performance of La203/InA1N/GaN metal-oxide-semiconductor high electron mobility transistors （MOSHEMTs） and InA1N/GaN high electron mobility transistors （HEMTs）. The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device, while the gate leakage current in the reverse direction could be reduced by four orders of magnitude. Compared with the HEMT device of a similar geometry, MOSHEMT presents a large gate voltage swing and negligible current collapse.展开更多
The reaction of the trialkyl metals (R3M, R = Me, Et; M = Ga, In) with benzo[h]quinolin-10-ol (HO-BQ) in a 1:1 molar ratio gave intramolecular N coordinated complexes R2M-O-BQ (M = Ga, R = Me 1, Et 2) and (R2In-O-BQ)(...The reaction of the trialkyl metals (R3M, R = Me, Et; M = Ga, In) with benzo[h]quinolin-10-ol (HO-BQ) in a 1:1 molar ratio gave intramolecular N coordinated complexes R2M-O-BQ (M = Ga, R = Me 1, Et 2) and (R2In-O-BQ)(2) (M = In, R = Et 3,) in 80-90% yield. The molecular structures of complexes 1 and 3 have been established by X-ray crystallography.展开更多
Two iodo（phthalocyainato） indium complexes were synthesized and mixed with polymer solution（PMMA/chloroform）to prepare iodo（phthalocyainato）indium/PMMA compound film materials on a glass slice by the method of d...Two iodo（phthalocyainato） indium complexes were synthesized and mixed with polymer solution（PMMA/chloroform）to prepare iodo（phthalocyainato）indium/PMMA compound film materials on a glass slice by the method of dipping film.Two materials have typical B-band and Q-band absorption of Phthalocyanine compounds in the UV-Vis spectrum.The reverse saturable absorption experiments show that two materials have better reverse saturable absorption properties while they have higher linear transmissivity.In addition,the highest transmittance of visible light is over 70%（tetrakis（cumylphenoxy）phthalocyainate indium/OMMA compound film material）.The initial threshold is 127.1mJ/cm^2.The dynamic range is 1.43.It can be concluded that introduction of the substituted groups having bigger steric hindrance and conjugative effect in the Phthalocyanine ring may increase the reverse saturable absorption effect of the Phthalocyanine indium material.展开更多
基金supported by the National Natural Science Foundation of China(Nos.11675051,51302079,51702138)the Natural Science Foundation of Hunan Province(No.2017JJ1008)the Key Research and Development Program of Hunan Province of China(No.2018GK2031)。
文摘It is generally considered that the hydrogenation of CO2 is the critical bottleneck of the CO2 electroreduction.In this work,with the aid of density functional theory(DFT)calculations,the catalytic hydrogenation of CO2 molecules over Indium-doped SnP3 catalyst were systematically studied.Through doping with indium(In)atom,the energy barrier of CO2 protonation is reduced and OCHO*species could easily be generated.This is mainly due to the p orbital of In exhibits strong hybridization with the p orbital of O,indicating that there is a strong interaction between OCHO*and In-doped SnP3 catalyst.As a result,In-doped SnP3 possesses high-efficiency and high-selectivity for converting CO2 into HCOOH with a low limiting potential of-0.17 V.Our findings will offer theoretical guidance to CO2 electroreduction.
文摘Nanocrystalline In_2O_3 was synthesized through a controllable solvothermal process in one-step at 210℃for 24 h. Gas sensing properties were tested by mixing gas in air in static state.At 268.5℃,the nanocrystal showed high sensitivity to LPG but lower sensitivity to H_2 and CO.In order to enhance the sensitivities to H_2 and CO,0.5 mass % Au and Pd were doped by an impregnation process.The sensitivities to H_2 and CO were increased under different working temperature.Au-doped In_2O_3 was superior to Pd-doped In_2O_3 whatever to H_2 or CO;the sensitivity was increased with the increase of working temperature;gas sensing properties to H_2 overmatched to CO.
基金Project supported by the Basic Science Research Fund for the Central Universities （Grant No. K50511250009）.
文摘We report on the performance of La203/InA1N/GaN metal-oxide-semiconductor high electron mobility transistors （MOSHEMTs） and InA1N/GaN high electron mobility transistors （HEMTs）. The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device, while the gate leakage current in the reverse direction could be reduced by four orders of magnitude. Compared with the HEMT device of a similar geometry, MOSHEMT presents a large gate voltage swing and negligible current collapse.
文摘The reaction of the trialkyl metals (R3M, R = Me, Et; M = Ga, In) with benzo[h]quinolin-10-ol (HO-BQ) in a 1:1 molar ratio gave intramolecular N coordinated complexes R2M-O-BQ (M = Ga, R = Me 1, Et 2) and (R2In-O-BQ)(2) (M = In, R = Et 3,) in 80-90% yield. The molecular structures of complexes 1 and 3 have been established by X-ray crystallography.
文摘Two iodo（phthalocyainato） indium complexes were synthesized and mixed with polymer solution（PMMA/chloroform）to prepare iodo（phthalocyainato）indium/PMMA compound film materials on a glass slice by the method of dipping film.Two materials have typical B-band and Q-band absorption of Phthalocyanine compounds in the UV-Vis spectrum.The reverse saturable absorption experiments show that two materials have better reverse saturable absorption properties while they have higher linear transmissivity.In addition,the highest transmittance of visible light is over 70%（tetrakis（cumylphenoxy）phthalocyainate indium/OMMA compound film material）.The initial threshold is 127.1mJ/cm^2.The dynamic range is 1.43.It can be concluded that introduction of the substituted groups having bigger steric hindrance and conjugative effect in the Phthalocyanine ring may increase the reverse saturable absorption effect of the Phthalocyanine indium material.
