The processing of InP, GaAs and related compounds doped with rare earth metals, such as Er, Nd and Gd, grown by LPE is described. The inhomogeneity of rare earth heavily doped epi-layers is studied by SIMS, SEM and X-...The processing of InP, GaAs and related compounds doped with rare earth metals, such as Er, Nd and Gd, grown by LPE is described. The inhomogeneity of rare earth heavily doped epi-layers is studied by SIMS, SEM and X-ray diffraction techniques.展开更多
文摘The processing of InP, GaAs and related compounds doped with rare earth metals, such as Er, Nd and Gd, grown by LPE is described. The inhomogeneity of rare earth heavily doped epi-layers is studied by SIMS, SEM and X-ray diffraction techniques.
