Re-Densification Effect of Pressure-Injected Peptide-Hyaluronic Acid Combination on Male Androgenic Alopecia

Introduction: Mechanism of male androgenic alopecia (MAGA) is complex and leads to an excessive hair shedding and decreased hair density. Oral, topical, and injectable autologous treatments demonstrate ability to stimulate hair re-growth, but the response is suboptimal or plateaus off. Synthetic combination of the peptide complex and hyaluronic acid (P-HA) demonstrated hair regrowth in alopecia patients. Electronically-operated pneumatic injections (EPI) generate micro-trauma in the dermis and under wound-healing conditions may enhance regeneration effect of P-HA. Methods: Subjects seeking improvement of their male pattern hair loss (Hamilton-Norwood type 2-4) received the P-HA treatments through EPI. The course included 4 treatments every two weeks over the 8-week period. In 6 months, the hair growth was assessed comparative to baseline by global clinical photography and digital phototrichograms. The treatment safety and tolerability were documented through the whole study period. Results: Twelve men (30-45 years old) completed the treatment course with high tolerability and without adverse events. Post-treatment assessment of the previously bald areas showed improved coverage on the clinical photographs. The phototrichograms demonstrated statistically significant increase in terminal hair density by 36%, cumulative hair thickness by 37%, and follicular units by 20%;all contributing to a 38% increase in cumulated hair density (all p Conclusion: Electronic pneumatic injections are well tolerated and can be safely used for the needle-free administration of the peptide-hyaluronic acid combination in MAGA therapy. We achieved significant hair re-densification in the balding scalp. The exact role of the EPI-induced impact in the hair re-growth mechanism remains to be ascertained. .

Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET

Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentionally injected into the oxide layer to analyze tile role of hot electron in hot carrier degradation. The enhanced degradation and the decreased time exponent appear with the injected hot electrons increasing, the degradation increases from 21.80% to 62.00% and the time exponent decreases from 0.59 to 0.27 with Vb decreasing from 0 V to -4 V, at the same time, the recovery also becomes remarkable and which strongly depends on the post stress gate bias Vg. Based on the experimental results, more unrecovered interface traps are created by the additional injected hot electron from the breaking Si-H bond, but the oxide trapped negative charges do not increase after a rapid recovery.

Spectral shift of solid high-order harmonics from different channels in a combined laser field

We investigate theoretically the spectral shift of the high-order harmonic generation(HHG)in ZnO driven by a combined laser field by solving the two-band semiconductor Bloch equations(SBEs)in the velocity gauge.The combined laser field is synthesized by a fundamental laser pulse and its seventh-frequency laser pulse.When the seventh-frequency laser pulse is added to the rising or falling parts of the fundamental laser field,we find that the spectral blueshift or redshift appears,which is due to the unequal contribution of the rising and falling parts in the fundamental laser field to the harmonics.By analyzing the time-dependent conduction band population in k space,we found that,in addition to the tunneling ionization channel,there is also the resonant electron injection channels which is induced by the seventh-frequency laser pulse.The harmonics generated by the different channels show the spectral redshift or the spectral blueshift,respectively.Through analyzing the k-integrated transient conduction band population of the electrons from different channels,we found that if there is a certain delay in the process of the electron excitation,it will lead to the delay in the harmonic emission,which results in the spectral redshift of the harmonics.

On-Resistance Degradations Under Different Stress Conditions in High Voltage pLEDMOS Transistors and an Improved Method

The on-resistance degradations of the p-type lateral extended drain MOS transistor （pLEDMOS） with thick gate oxide under different hot carrier stress conditions are different, which has been experimentally investigated. This difference results from the interface trap generation and the hot electron injection, and trapping into the thick gate oxide and field oxide of the pLEDMOS transistor. An improved method to reduce the on-resistance degradations is also presented, which uses the field oxide as the gate oxide instead of the thick gate oxide. The effects are analyzed with a MEDICI simulator.

Synthesis and optical properties of an alternating copolymer composed of MEHPV and 1,3,4-oxadiazole

A poly （ p-phenylenevinylene ） （ PPV ） alternating copolymer, poly [ （ 2, 5-diphenylene-1, 3, 4-oxadiazole ）-4-4＇ - vinylene-alt-2-methoxy-5-（ 2-ethylhexyloxy ）-1, 4-phenylenevinylene] （oxa-MEHPV）, is synthesized by Heck coupling reaction and characterized with UV-vis, Fourier transform infrared （ FT-IR ）, ^1H-NMR and photoluminescence （ PL ） spectroscopy, oxa-MEHPV possesses an outstanding thermal stability and shows excellent solubility in common organic solvents such as dichloromethane, chloroform, toluene, and tetrahydrofuran（THF）. The introduction of the electron-deficient 1, 3, 4-oxadiazole units into the MEH-PPV backbone also increases the electron affinities of the conjugated segment, which leads to the blue-shift of the maximum absorption wavelength and makes the polymer have a high optical band-gap energy, good electron-transporting stability and high PL quantum yield.

INVESTIGATION IN REDUCING EXHAUST EMISSIONS FROM TWO STROKE MOTORCYCLES

Test results of reducing two stroke motorcycle emissions with new type carburettors and electronic fuel injection systems are presented. Analyses and comparison between different systems are discussed. The adoption of electronically controlled injection and corresponding electronic control technique is an effective measure of prolonged vitality to improve emissions from two stroke motorcycles. Suggestions about the strategic steps of China′s motorcycle emission control are proposed.

Discrete Model of Plasticity and Failure of Crystalline Materials

Within the framework of a discrete model of the nuclei of linear and planar defects, the variational principles of sliding in translational and rotational plasticity, fracture by separation (cleavage) and shear (shearing) in crystalline materials are considered. The analysis of mass transfer fluxes near structural kinetic transitions of slip bands into cells, cells into fragments of deformation origin, destruction by separation and shear for fractal spaces using fractional Riemann-Liouville derivatives, local and global criteria of destruction is carried out. One of the possible schemes of the crack initiation and growth mechanism in metals is disclosed. It is shown that the discrete model of plasticity and fracture does not contradict the known dislocation models of fracture and makes it possible to abandon the kinetic concept of thermofluctuation rupture of interatomic bonds at low temperatures.

Electron Injection Enhancement by Diamond-Like Carbon Film in Polymer Electroluminescence Devices

A diamond-like carbon （DLC） film is deposited as an electron injection layer between the polymer light-emitting layer（MEH-PPV） and aluminum （Al） cathode electrode in polymer electroluminescence devices （PLEDs） using a radio frequency plasma deposition system. The source material of the DLC is n-butylamine. The devices consist of indium tin oxide （ITO）/MEH-PPV/DLC/Al. Electron injection properties are investigated through I-V characteristics,and the mechanism of electron injection enhancement due to a thin DLC layer has been studied. It is found that： （1） a DLC layer thinner than 1.0nm leads to a higher turn-on voltage and decreased electroluminescent （EL） efficiency; （2） a 5.0nm DLC layer significantly enhances the electron injection and results in the lowest turn-on voltage and the highest EL efficiency; （3） DLC layer that exceeds 5.0nm results in poor device performance;and（4） EL emission can hardly be detected when the layer exceeds 10.0nm. The properties of ITO/MEH-PPV/DLC/Al and ITO/MEH-PPV/LiF/Al are investigated comparatively.

A New Lifetime Prediction Model for pMOSFETs Under V_g=V_d/2 Mode with 2.5nm Oxide

Gate current for pMOSFETs is composed of direct tunneling current,channel hot hole,electron injection current,and highly energetic hot holes by secondary impact ionization.The device degradation under V g=V d/2 is mainly caused by the injection of hot electrons by primary impact ionization and hot holes by secondary impact ionization,and the device lifetime is assumed to be inversely proportional to the hot holes,which is able to surmount Si-SiO 2 barrier and be injected into the gate oxide.A new lifetime prediction model is proposed on the basis and validated to agree well with the experiment.

Air-Stable Ultrabright Inverted Organic Light-Emitting Devices with Metal Ion-Chelated Polymer Injection Layer

Here,this work presents an air-stable ultrabright inverted organic lightemitting device(OLED)by using zinc ionchelated polyethylenimine(PEI)as electron injection layer.The zinc chelation is demonstrated to increase the conductivity of the PEI by three orders of magnitude and passivate the polar amine groups.With these physicochemical properties,the inverted OLED shows a record-high external quantum efficiency of 10.0% at a high brightness of 45,610 cd m^(-2) and can deliver a maximum brightness of 121,865 cd m^(-2).Besides,the inverted OLED is also demonstrated to possess an excellent air stability(humidity,35%)with a half-brightness operating time of 541 h@1000 cd m^(-2) without any protection nor encapsulation.

Design of speed controller for electronic fuel injection gasoline generator based on feed-forward PID control

As for the application of electronic fuel injection （EFI） system to small gasoline generator set, mechanical speed controller cannot be coupled with EFI system and has the shortcomings of lagged regulation and poor accuracy, a feed-forward control strategy based on load combined with proportional-integral-differential （PID） control strategy was proposed, and a digital speed controller applied to the electrical control system was designed. The detailed control strategy of the controller was intro- duced. The hardware design for the controller and the key circuits of motor driving, current sampling and angular signal captu- ring were given, and software architecture was discussed. Combined with a gasoline generator set mounted with EFI system, the controller parameters were tuned and optimized empirically by hardware in loop and bench test methods. Test results show that the speed deviation of generator set is low and the control system is stable in steady state; In transient state the control system responses quickly, has high stability under mutation loads especially when suddenly apply and remove 100% load, the speed deviation is within 8% of reference speed and the transient time is less than 5 s, satisfying the ISO standard.

Radial propagation of magnetospheric substorm-injected energetic electrons observed using a BD-IES instrument and Van Allen Probes

In cases where substorm injections can be observed simultaneously by multiple spacecraft,they can help elucidate the potential mechanisms of particle transport and energization,of great importance to understanding and modeling the magnetosphere.In this paper,using data returned from the BeiDa-IES（BD-IES） instrument onboard a satellite in an inclined（55°） geosynchronous orbit（IGSO）,in combination with two geo-transfer orbiting（GTO） satellite Van Allen Probes（A and B）,we analyze a substorm injection event that occurred on the 16 th of October 2015.During this substorm injection,the IGSO onboard BD-IES was outbound,while both Van Allen Probe satellites（A and B） were inbound,a configuration of multiple trajectories that provides a unique opportunity to simultaneously investigate both the inward and outward radial propagation of substorm injection.Indicated by AE/AL indices,this substorm was closely related to an IMF/solar wind discontinuity that showed a sharp change in IMF Bz direction to the north.The innermost signature of this substorm injection was detected by Van Allen Probes A and B at L-3.7,while the outermost signature was observed by the onboard BD-IES instrument at L-10.These data indicate that the substorm had a global,rather than just local,effect.Finally,we suggest that electric fields carried by fast-mode compressional waves around the substorm injection are the most likely candidate mechanism for the electron injection signatures observed in the inner- and outermost inner magnetosphere.

Organic light emitting diodes using magnesium doped organic acceptor as electron injection layer and silver as cathode

Organic light emitting diodes employing magnesium doped electron acceptor 3, 4, 9, 10 perylenetetracarboxylic dianhydride （Mg：PTCDA） as electron injection layer and silver as cathode were demonstrated. As compared to Mg ： Ag cathode, the combination of the Mg ： PTCDA layer and silver provided enhanced electron injection into tris （8- quinolinolato） aluminium. The device with 1 ： 2 Mg ： PTCDA and Ag showed an increase of about 12% in the maximum current efficiency, mainly due to the improved hole-electron balance, and an increase of about 28% in the maximum power efficiency, as compared to the control device using Mg ： Ag cathode. The properties of Mg ： PTCDA composites were studied as well.

Improved blue quantum dot light-emitting diodes via chlorine passivated ZnO nanoparticle layer

In blue quantum dot light emitting diodes(QLEDs),electron injection is insufficient,which would degrade device efficiency and stability.Herein,we employ chlorine passivated ZnO nanoparticles as electron transport layer to facilitate electron injection into QDs effectively.Moreover,it suppresses exciton quenching at the QD/ZnO interface by blocking charge transfer channel.As a result,the maximum external quantum efficiency of blue QLED was increased from 2.55%to 4.60%,and the operation lifetime of blue QLED was nearly 4 times longer than that of the control device.Our work indicates that election injection plays an important role in blue QLED efficiency and stability.

The 600 keV electron injections in the Earth's outer radiation belt:A statistical study

Relativistic electron injections are one of the mechanisms of relativistic(≥0.5 MeV) electron enhancements in the Earth’s outer radiation belt. In this study, we present a statistical observation of 600 keV electron injections in the outer radiation belt by using data from the Van Allen Probes. On the basis of the characteristics of different injections, 600 keV electron injections in the outer radiation belt were divided into pulsed electron injections and nonpulsed electron injections. The 600 keV electron injections were observed at 4.5 < L <6.4 under the geomagnetic conditions of 450 nT < AE < 1,450 nT. An L of ~4.5 is an inward limit for 600 keV electron injections. Before the electron injections, a flux negative L shell gradient for ≤0.6 MeV electrons or low electron fluxes in the injected region were observed. For600 keV electron injections at different L shells, the source populations from the Earth’s plasma sheet were different. For 600 keV electron injections at higher L shells, the source populations were higher energy electrons(~200 keV at X ~–9 R_(E)), whereas the source populations for 600 keV electron injections at lower L shells were lower energy electrons(~80 keV at X ~–9 R_(E)). These results are important to further our understanding of electron injections and rapid enhancements of 600 keV electrons in the Earth’s outer radiation belt.

Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress

The degradation mechanism of enhancement-mode Al Ga N/Ga N high electron mobility transistors（HEMTs） fabricated by fluorine plasma ion implantation technology is one major concern of HEMT＇s reliability. It is observed that the threshold voltage shows a significant negative shift during the typical long-term on-state gate overdrive stress. The degradation does not originate from the presence of as-grown traps in the Al Ga N barrier layer or the generated traps during fluorine ion implantation process. By comparing the relationships between the shift of threshold voltage and the cumulative injected electrons under different stress conditions, a good agreement is observed. It provides direct experimental evidence to support the impact ionization physical model, in which the degradation of E-mode HEMTs under gate overdrive stress can be explained by the ionization of fluorine ions in the Al Ga N barrier layer by electrons injected from 2DEG channel.Furthermore, our results show that there are few new traps generated in the Al Ga N barrier layer during the gate overdrive stress, and the ionized fluorine ions cannot recapture the electrons.

STRATEGY FOR DIESEL ROTARY ENGINE WITH COMMON RAIL INJECTION SYSTEM

A direct injection low compression ratios diesel rotary engine is designed and studied to find the appropriate application of the electronic controlled high pressure common rail injection system. Current development focuses on the applied fuel injection and ignition strategies, especially concerning the combustion configurations of injectors, ignition source, and combustion chamber. The prototype engine, equipped with Bosch common rail system and high performance electronic control unit （ECU）, is designed correspondingly. Studies show that the integration of a common rail injection system and the main and pilot duel injectors configurations, assisted with glow plug ignition device and flexible ECU, represents a promising approach to improve the potential of the low compression ratios diesel rotary engine. Currently the engine can run at 6 kr · min^-1 steadily and the power is about 68 kW/（4 kr ·min^- 1）.

Polymer light-emitting devices using poly(ethylene oxide) as an electron injecting layer

The performance of polymer light emitting devices(PLEDs)based on polyvinyl carbazole(PVK)is improved by introducing a nanoscale interfacial thin layer,made of poly(ethylene oxide)(PEO),between the calcium cathode and the PVK emissive layer.It is believed that the PEO layer plays a key role in enhancing the device performance.In comparison to the device with Ca/Al as the cathode,the performance of the PLED with PEO/Ca/Al cathode,including the driving voltage,luminance efficiency is significantly improved.These improvements are attributed to the introduction of a thin layer of PEO that can lower the interfacial barrier and facilitate electron injection.

Dye-sensitized solar cells: Atomic scale investigation of interface structure and dynamics

Recent progress in dye-sensitized solar cells （DSC） research is reviewed, focusing on atomic-scale investigations of the interface electronic structures and dynamical processes, including the structure of dye adsorption onto Ti02, ultrafast electron injection, hot-electron injection, multiple-exciton generation, and electron-hole recombination. Advanced exper- imental techniques and theoretical approaches are briefly summarized, and then progressive achievements in photovoltaic device optimization based on insights from atomic scale investigations are introduced. Finally, some challenges and oppor- tunities for further improvement of dye solar cells are presented.

Degradation of the transconductance of a gate-modulated generation current in nMOSFET

The degradation of transconductance （G） of a gate-modulated generation current IGD in a LDD nMOSFET is investigated. The G curve shifts rightward under the single electron-injection-stress （EIS）. The trapped electrons located in the gate oxide over the LDD region （QL） makes the effective drain voltage diminish. Accordingly, the G peak in depletion （GMD） and that in weak inversion （GMw） decrease. It is found that △GMD and △GMw each have a linear relationship with the n-th power of stress time （tn） in a dual-log coordinate： △GMD octn, AGMD octn （n = 0.25）. During the alternate stress, the injected holes neutralize QL induced by the previous EIS. This neutralization makes the effective VD restore to the initial value and then the IGD peak recovers completely. Yet the threshold voltage recovery is incomplete due to the trapped electron located over the channel （Qc）. As a result, GMW only recovers to circa 50% of the initial value after the hole-injection-stress （HIS）. Instead, GMD almost recovers. The relevant mechanisms are given in detail.