Power-combining based on master-slave injection-locking magnetron

A microwave power-combining system composed of two Panasonic 2M244-M1 magnetrons based on master–slave injection-locking is demonstrated in this paper. The principle of master–slave injection-locking and the locking condition are theoretical analyzed. Experimental results are consistent with the theoretical analysis and the experimental combined efficiency is higher than 96%. Compared with the external-injection-locked system, the power-combining based on the master–slave injection-locking magnetron is superior by taking out the external solid-state driver and the real-time phase control system. Thus, this power-combining system has great potential for obtaining a high efficiency, high stability, low cost, and high power microwave source.

Chaos synchronization in injection-locked semiconductor lasers with optical feedback

Based on the rate equations, we have investigated three types of chaos synchronizations in injection-locked semiconductor lasers with optical feedback. Numerical simulation shows that the synchronization can be realized by the symmetric or asymmetric laser systems. Also, the influence of parameter mismatches on chaos synchronization is investigated, and the results imply that these two lasers can achieve good synchronization, with smaller tolerance of parameter mismatch existing.

Analysis of the injection-locked magnetron with a mismatched circulator

Based on the scatter matrix of the four-port lossless mismatched circulator, the phase differential equation of the injection-locked magnetron is derived by comparing different effects of the mismatched and perfect circulator on the injection ratio. Besides, the locking range of the injection-locked magnetron with the mismatched circulator is deduced by functional operation. In addition, the phase differential equation and the locked bandwidth of the injection-locked system with a mismatched circulator are compared with those of the small injection-ratio case with a perfect circulator. The in- fluence of the circulator reflection coefficient on the injection-locked magnetron is also analyzed by numerical calculation. Theoretical analysis shows that the decrement of the locked bandwidth is less than 1% and decrement of the stable phase difference is less than 1.2% when the reflection coefficient is less than 0.1.

INJECTION-LOCKED DIVIDER

An injection-Locked divider(ILD)can provide good synchronization at lower inputsignal to noise ratio,which is its advantage over other types of divider.The general expressionof phase equation and equivalent model are presented for the ILD with an input additive noise.In the absence of noise the performance of the phase-modulated signal through the ILD andsynchronous ranges of the ILD are given.The effects of the additive noise on the ILD arediscuued.The injection-locked amplifier(ILA)is only a particular case in which n=1,thereforethe given results arc applicable to the ILA.

CMOS Direct-Injection Divide-by-3 Injection-Locked Frequency Dividers

This paper proposes CMOS LC-tank divide-by-3 injection locked frequency dividers(ILFDs)fabricated in 0.18μn and 90nm CMOS process and describes the circuit design,operation principle and measurement results of the ILFDs.The ILFDs use two injection series-MOSFETs across the LC resonator and a differential injection signal is applied to the gates of injection MOSFETs.The direct-injection divide-by-3 ILFDs are potential for radio-frequency application and can have wide locking range.

A 30GHz Wideband CMOS Injection-Locked Frequency Divider for 60GHz Transceiver

In this paper, a 30 GHz wide locking-range (26.2 GHz-35.7 GHz) direct injection-locked frequency divider (ILFD), which operating in the millimeter-wave (MMW) band, is presented. The locking range of the ILFD is extended by using differential injection topology. Besides, varactors are used in RLC resonant tank for extending the frequency tuning range. The post simulation results show that a wide locking-range of 9.5 GHz (30.7%) is achieved. When the VCO output frequency varies from 26.85 GHz to 34.42 GHz, the proposed ILFD can achieve divide-by-two correctly. Designed in 0.13 μm CMOS technology, the ILFD occupies a core area of 0.76 mm2 while drawing 7 mA of current from 2.5 V power supply.

CMOS analog and mixed-signal phase-locked loops: An overview

CMOS analog and mixed-signal phase-locked loops(PLL)are widely used in varies of the system-on-chips(SoC)as the clock generator or frequency synthesizer.This paper presents an overview of the AMS-PLL,including:1)a brief introduction of the basics of the charge-pump based PLL,which is the most widely used AMS-PLL architecture due to its simplicity and robustness;2)a summary of the design issues of the basic CPPLL architecture;3)a systematic introduction of the techniques for the performance enhancement of the CPPLL;4)a brief overview of ultra-low-jitter AMS-PLL architectures which can achieve lower jitter(<100 fs)with lower power consumption compared with the CPPLL,including the injection-locked PLL(ILPLL),subsampling(SSPLL)and sampling PLL(SPLL);5)a discussion about the consideration of the AMS-PLL architecture selection,which could help designers meet their performance requirements.

Implementation of an All-Optical NOR Gate Using a Multi-Wavelength Injection-Locked Diode Laser

We demonstrated an all optical NOR gate operating at 10 Gb/s using a multi-wavelength mutual injection-locked Fabry-Perot laser diode (FP-LD).

Improvement of Injection-Locked VCSELs for Analog and Digital Communication Systems

VCSEL Injection locking is demonstrated to increase laser bandwidth and reduce non-linearity and chirp. All these properties enhance analog and digital modulation performance.

Pulse Generation by Mode-Beating in a Dual-Wavelength Injection-Locked Laser

Generating of repetition-rate tunable optical pulses is achieved by mode-beating within a CW-operated Fabry-Perot laser. The repetition-rate was tunable from 6GHz to 32GHz and may be synchronized by a low frequency (500MHz) optical input.

A wide locking range and low DC power injection-locked frequency tripler for K-band application

This paper presents a wide locking range and low DC power injection-locked frequency tripler for Kband frequency synthesizers application. The proposed ILFT employs a variable current source to decouple the injection signal path and the bias current so that the third harmonic of the injection signal can be maximized to enlarge the locking range. Meanwhile, a 2-bit digital control capacity array is used to further increase the output frequency locking range. It is implemented in a 130-nm CMOS process and occupies a chip area of 0.7 ×0.8 mm^2 without pads. The measured results show that the proposed ILFT can achieve a whole locking range from 18 to21 GHz under the input signal of 4 dBm and the core circuit dissipates only 4 m W of DC power from a 0.8 V supply voltage. The measured phase noise degradation from that of the injection signal is only 10 dB at 1 MHz offset.

A 31–45.5 GHz injection-locked frequency divider in 90-nm CMOS technology

We present a 31–45.5 GHz injection-locked frequency divider(ILFD) implemented in a standard 90-nm CMOS process. To reduce parasitic capacitance and increase the operating frequency, an NMOS-only cross-coupled pair is adopted to provide negative resistance. Acting as an adjustable resistor, an NMOS transistor with a tunable gate bias voltage is connected to the differential output terminals for locking range extension. Measurements show that the designed ILFD can be fully functional in a wide locking range and provides a good figure-of-merit. Under a 1 V tunable bias voltage, the self-resonant frequency of the divider is 19.11 GHz and the maximum locking range is 37.7% at 38.5 GHz with an input power of 0 d Bm. The power consumption is 2.88 m W under a supply voltage of 1.2 V. The size of the chip including the pads is 0.62 mm×0.42 mm.

Experimental study on resonance frequency enhancement of strong optical injection-locked semiconductor lasers

Enhancing resonance frequency of strong optical studied. Resonance frequency is increased from technique. We experimentally demonstrate that injection-locked semiconductor lasers is experimentally 4.1 to 53.9 GHz by the optical injection locking （OIL） resonance frequency is strictly equal to the frequency spacing between the cavity modes of the master and slave lasers under strong OIL condition. This result provides valuable information to improve OIL theory.

Laser diode pumped high-energy single-frequency Er:YAG laser with hundreds of nanoseconds pulse duration

We demonstrated a high-energy single-frequency erbium-doped yttrium aluminum garnet(Er:YAG)laser.With1470 nm laser diodes(LDs)as pumping sources,single-frequency laser pulses with energy of 28.6 m J,21.6 m J,and 15.0 m J are obtained at pulse repetition frequency of 200 Hz,300 Hz,and 500 Hz,respectively.As far as we know,this is the highest single-frequency pulse energy with the Er:YAG gain medium.With the ring cavity design,pulse duration is maintained at hundreds of nanoseconds.This high-energy single-frequency laser with hundreds of nanoseconds pulse duration is a prospective laser source for light detection and ranging applications.

A fully-differential phase-locked loop frequency synthesizer for 60-GHz wireless communication

A 40-GHz phase-locked loop（PLL） frequency synthesizer for 60-GHz wireless communication applications is presented. The electrical characteristics of the passive components in the VCO and LO buffers are accurately extracted with an electromagnetic simulator HFSS. A differential tuning technique is utilized in the voltage controlled oscillator（VCO） to achieve higher common-mode noise rejection and better phase noise performance. The VCO and the divider chain are powered by a 1.0 V supply while the phase-frequency detector（PFD）and the charge pump（CP） are powered by a 2.5 V supply to improve the linearity. The measurement results show that the total frequency locking range of the frequency synthesizer is from 37 to 41 GHz, and the phase noise from a 40 GHz carrier is –97.2 dBc/Hz at 1 MHz offset. Implemented in 65 nm CMOS, the synthesizer consumes a DC power of 62 m W, including all the buffers.

A Ka-band wide locking range frequency divider with high injection sensitivity

This paper proposes a direct injection-locked frequency divider（ILFD） with a wide locking range in the Ka-band. A complementary cross-coupled architecture is used to enhance the overdriving voltage of the switch transistor so that the divider locking range is extended efficiently. New insights into the locking range and output power are proposed. A new method to analyze and optimize the injection sensitivity is presented and a layout technique to reduce the parasitics of the cross-coupled transistors is applied to decrease the frequency shift and the locking range degradation. The circuit is designed in a standard 90-nm CMOS process. The total locking range of the ILFD is 43.8% at 34.5 GHz with an incident power of –3.5 dBm. The divider IC consumes 3.6 mW of power at the supply voltage of 1.2 V. The chip area including the pads is 0.50.5 mm2.

Analysis and design of transformer-based CMOS ultra-wideband millimeter-wave circuits for wireless applications: a review

With a lot of millimeter-wave(mm-Wave)applications being issued,wideband circuits and systems have attracted much attention because of their strong applicability and versatility.In this paper,four transformer-based ultra-wideband mm-Wave circuits demonstrated in CMOS technologies are reviewed from theoretical analysis,implementation,to performance.First,we introduce a mm-Wave low-noise amplifier with transformer-based Gm-boosting and pole-tuning techniques.It achieves wide operating bandwidth,low noise figure,and good gain performance.Second,we review an injection-current-boosting technique which can significantly increase the locking range of mm-Wave injection-locked frequency triplers.Based on the injectionlocked principle,we also discuss an ultra-wideband mm-Wave divider with the transformer-based high-order resonator.Finally,an E-band up-conversion mixer is presented;using the two-path transconductance stage and transformer-based load,it obtains good linearity and a large operating band.

Low-noise sub-harmonic injection locked multiloop ring oscillator

A three-stage differential voltage-controlled ring oscillator is presented for wide-tuning and low-phase noise requirement of clock and data recovery circuit in ultra wideband（UWB） wireless body area network. To improve the performance of phase noise of delay cell with coarse and fine frequency tuning, injection locked technology together with pseudo differential architecture are adopted. In addition, a multiloop is employed for frequency boosting. Two RVCOs, the standard RVCO without the IL block and the proposed IL RVCO, were fabricated in SMIC 0.18 m 1P6 M Salicide CMOS process. The proposed IL RVCO exhibits a measured phase noise of –112.37 d Bc/Hz at 1 MHz offset from the center frequency of 1 GHz, while dissipating a current of 8 m A excluding the buffer from a 1.8-V supply voltage. It shows a 16.07 d B phase noise improvement at 1 MHz offset compared to the standard topology.