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Numerical Simulation and Experimental Verification of Temperature Distribution of Piezoelectric Stack with Heating and Thermal Insulation Device
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作者 CHEN Yixiao YANG Xinghua +1 位作者 YU Li SHEN Xing 《Transactions of Nanjing University of Aeronautics and Astronautics》 EI CSCD 2021年第S01期17-23,共7页
This paper discusses the temperature field distribution of piezoelectric stack with heating and thermal insulation device in cryogenic temperature environment. Firstly,the model of the piezoelectric damper is simplifi... This paper discusses the temperature field distribution of piezoelectric stack with heating and thermal insulation device in cryogenic temperature environment. Firstly,the model of the piezoelectric damper is simplified and established by using partial-differential heat conduction equation. Secondly,the two-dimensional Du Fort-Frankel finite difference scheme is used to discretize the thermal conduction equation,and the numerical solution of the transient temperature field of piezoelectric stack driven by heating film at different positions is obtained by programming iteration. Then,the cryogenic temperature cabinet is used to simulate the low temperature environment to verify the numerical analysis results of the temperature field. Finally,the finite difference results are compared with the finite results and the experimental data in steady state and transient state,respectively. Comparison shows that the results of the finite difference method are basically consistent with the finite element and the experimental results,but the calculation time is shorter. The temperature field distribution results obtained by the finite difference method can verify the thermal insulation performance of the heating system and provide data basis for the temperature control of piezoelectric stack. 展开更多
关键词 thermal differential equation temperature field finite difference piezoelectric stack heating and thermal insulation device
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Influence of Device Geometry on Transport Properties of Topological Insulator Microflakes
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作者 Fan Gao Yongqing Li 《Chinese Physics Letters》 SCIE CAS CSCD 2021年第11期72-76,共5页
In the transport studies of topological insulators, microflakes exfoliated from bulk single crystals are often used because of the convenience in sample preparation and the accessibility to high carrier mobilities. He... In the transport studies of topological insulators, microflakes exfoliated from bulk single crystals are often used because of the convenience in sample preparation and the accessibility to high carrier mobilities. Here, based on finite element analysis, we show that for the non-Hall-bar shaped topological insulator samples, the measured four-point resistances can be substantially modified by the sample geometry, bulk and surface resistivities,and magnetic field. Geometry correction factors must be introduced for accurately converting the four-point resistances to the longitudinal resistivity and Hall resistivity. The magnetic field dependence of inhomogeneous current density distribution can lead to pronounced positive magnetoresistance and nonlinear Hall effect that would not exist in the samples of ideal Hall bar geometry. 展开更多
关键词 Influence of device Geometry on Transport Properties of Topological Insulator Microflakes
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