Composite Li metal anodes based on three-dimensional(3D) porous frameworks have been considered as an effective material for achieving stable Li metal batteries with high energy density.However,uneven Li deposition be...Composite Li metal anodes based on three-dimensional(3D) porous frameworks have been considered as an effective material for achieving stable Li metal batteries with high energy density.However,uneven Li deposition behavior still occurs at the top of 3D frameworks owing to the local accumulation of Li ions.To promote uniform Li deposition without top dendrite growth,herein,a layered multifunctional framework based on oxidation-treated polyacrylonitrile(OPAN) and metal-organic framework(MOF) derivatives was proposed for rationally regulating the distribution of Li ions flux,nucleation sites,and electrical conductivity.Profiting from these merits,the OPAN/carbon nano fiber-MOF(CMOF) composite framework demonstrated a reversible Li plating/stripping behavior for 500 cycles with a stable Coulombic efficiency of around 99.0% at the current density of 2 mA/cm~2.Besides,such a Li composite anode exhibited a superior cycle lifespan of over 1300 h under a low polarized voltage of 18 mV in symmetrical cells.When the Li composite anode was paired with LiFePO_(4)(LFP) cathode,the obtained full cell exhibited a stable cycling over 500 cycles.Moreover,the COMSOL Multiphysics simulation was conducted to reveal the effects on homogeneous Li ions distribution derived from the above-mentioned OPAN/CMOF framework and electrical insulation/conduction design.These electrochemical and simulated results shed light on the difficulties of designing stable and safe Li metal anode via optimizing the 3D frameworks.展开更多
This paper investigates the effect of Dresselhaus spin orbit coupling on the spin-transport properties of ferromagnet/insulator/semiconductor/insulator/ferromagnet double-barrier structures. The influence of the thick...This paper investigates the effect of Dresselhaus spin orbit coupling on the spin-transport properties of ferromagnet/insulator/semiconductor/insulator/ferromagnet double-barrier structures. The influence of the thickness of the insulator between the ferromagnet and the semiconductor on the polarization is also considered. The obtained results indicate that (i) the polarization can be enhanced by reducing the insulator layers at zero temperature, and (ii) the tunnelling magnetoresistance inversion can be illustrated by the influence of the Dresselhaus spin-orbit coupling effect in the double-barrier structure. Due to the Dresselhaus spin-orbit coupling effect, the tunnelling magnetoresistance inversion occurs when the energy of a localized state in the barrier matches the Fermi energy EF of the ferromagnetic electrodes.展开更多
The in situ valence band photoemission spectrum (PES) and X-ray absorption spectrum (XAS) at V LⅡ-LⅢ edges of the VO2 thin film, which is prepared by pulsed laser deposition, are measured across the metal–insul...The in situ valence band photoemission spectrum (PES) and X-ray absorption spectrum (XAS) at V LⅡ-LⅢ edges of the VO2 thin film, which is prepared by pulsed laser deposition, are measured across the metal–insulator transition (MIT) temperature (TMIT=67 ℃). The spectra show evidence for changes in the electronic structure depending on temperature. Across the TMIT, pure V 3d characteristic d‖ and O 2p-V 3d hybridization characteristic πpd, σpd bands vary in binding energy position and density of state distributions. The XAS reveals a temperature-dependent reversible energy shift at the V LⅢ-edge. The PES and XAS results imply a synergetic energy position shift of occupied valence bands and unoccupied conduction band states across the phase transition. A joint inspection of the PES and XAS results shows that the MIT is not a one-step process, instead it is a process in which a semiconductor phase appears as an intermediate state. The final metallic phase from insulating state is reached through insulator–semiconductor, semiconductor–metal processes, and vice versa. The conventional MIT at around the TMIT=67 ℃ is actually a semiconductor–insulator transformation point.展开更多
High-stability thermal management is critical for the measurements of high sensitivity for temperature, but also challenging because any small thermal disturbances could lead to unacceptable temperature fluctuations. ...High-stability thermal management is critical for the measurements of high sensitivity for temperature, but also challenging because any small thermal disturbances could lead to unacceptable temperature fluctuations. The present work delivers a design for passive temperature control, customized for a component in the satellites for gravitational wave detection. A novel sandwichlike structure is proposed with the configurations of proper materials, consisting of a layer of insulation material and two layers of nanocomposite phase change materials, bringing an integration of heat insulation and absorption/storage. Its performance is examined using an improved thermal network model and the revised transfer function method(TFM). The basic results of the two methods are validated by present COMSOL simulations and available numerical and experimental data in the literature. An effective reduction of temperature fluctuation is achieved to the scale of 0.1 K, even under two thermal disturbances from different directions: a radiative heat flux of 20 W m~(-2)(inside) and a temperature fluctuation of about 20 K(outside). Moreover,the TFM is employed to analyze the effects of the frequency of thermal disturbance: excellent damping performance is obtained for over 3.2 mHz and the underlying mechanism is discussed. Overall, the present design is expected to be combined with active temperature control to explore more possible ways for temperature control with higher stability.展开更多
This paper is devoted to solving the transient electric field and transient charge density on the dielectric interface under the electroquasistatic(EQS)field conditions with high accuracy.The proposed method is suitab...This paper is devoted to solving the transient electric field and transient charge density on the dielectric interface under the electroquasistatic(EQS)field conditions with high accuracy.The proposed method is suitable for both 2-D and 3-D applications.Firstly,the governing equations represented by scalar electric potential are discretized by the nodal finite element method(FEM)in space and the finite difference method in time.Secondly,the transient constrained electric field equation on the boundary(TCEFEB)is derived to calculate the normal component of the transient electric field intensities on the Dirichlet boundary and dielectric interface as well as the transient charge density on the dielectric interface.Finally,a 2-D numerical example is employed to demonstrate the validity of the proposed method.Furthermore,the comparisons of the numerical accuracy of the proposed method in this paper with the existing FEMs for electric field intensity and charge density on the dielectric interface are conducted.The results show that the numerical accuracy of the proposed method for calculating the normal component of transient electric field intensities on the Dirichlet boundary and dielectric interface as well as the transient charge density on the dielectric interface is close to that of nodal electric potential and an order of magnitude higher than those of existing FEMs.展开更多
基金supported by the National Natural Science Foundation of China (52302292, 52302058, 52302085)the China Postdoctoral Science Foundation (2021M702225)+1 种基金the Anhui Province University Natural Science Research Project (2023AH030093, 2023AH040301)the Startup Research Fund of Chaohu University (KYQD-2023005, KYQD-2023051)。
文摘Composite Li metal anodes based on three-dimensional(3D) porous frameworks have been considered as an effective material for achieving stable Li metal batteries with high energy density.However,uneven Li deposition behavior still occurs at the top of 3D frameworks owing to the local accumulation of Li ions.To promote uniform Li deposition without top dendrite growth,herein,a layered multifunctional framework based on oxidation-treated polyacrylonitrile(OPAN) and metal-organic framework(MOF) derivatives was proposed for rationally regulating the distribution of Li ions flux,nucleation sites,and electrical conductivity.Profiting from these merits,the OPAN/carbon nano fiber-MOF(CMOF) composite framework demonstrated a reversible Li plating/stripping behavior for 500 cycles with a stable Coulombic efficiency of around 99.0% at the current density of 2 mA/cm~2.Besides,such a Li composite anode exhibited a superior cycle lifespan of over 1300 h under a low polarized voltage of 18 mV in symmetrical cells.When the Li composite anode was paired with LiFePO_(4)(LFP) cathode,the obtained full cell exhibited a stable cycling over 500 cycles.Moreover,the COMSOL Multiphysics simulation was conducted to reveal the effects on homogeneous Li ions distribution derived from the above-mentioned OPAN/CMOF framework and electrical insulation/conduction design.These electrochemical and simulated results shed light on the difficulties of designing stable and safe Li metal anode via optimizing the 3D frameworks.
基金supported by the National Natural Science Foundation of China (Grant No 10674040)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No 20060094002)
文摘This paper investigates the effect of Dresselhaus spin orbit coupling on the spin-transport properties of ferromagnet/insulator/semiconductor/insulator/ferromagnet double-barrier structures. The influence of the thickness of the insulator between the ferromagnet and the semiconductor on the polarization is also considered. The obtained results indicate that (i) the polarization can be enhanced by reducing the insulator layers at zero temperature, and (ii) the tunnelling magnetoresistance inversion can be illustrated by the influence of the Dresselhaus spin-orbit coupling effect in the double-barrier structure. Due to the Dresselhaus spin-orbit coupling effect, the tunnelling magnetoresistance inversion occurs when the energy of a localized state in the barrier matches the Fermi energy EF of the ferromagnetic electrodes.
基金Project supported by the Natural Science Foundation of the Chinese Academy of Sciences(Grant No.H91G750Y21)
文摘The in situ valence band photoemission spectrum (PES) and X-ray absorption spectrum (XAS) at V LⅡ-LⅢ edges of the VO2 thin film, which is prepared by pulsed laser deposition, are measured across the metal–insulator transition (MIT) temperature (TMIT=67 ℃). The spectra show evidence for changes in the electronic structure depending on temperature. Across the TMIT, pure V 3d characteristic d‖ and O 2p-V 3d hybridization characteristic πpd, σpd bands vary in binding energy position and density of state distributions. The XAS reveals a temperature-dependent reversible energy shift at the V LⅢ-edge. The PES and XAS results imply a synergetic energy position shift of occupied valence bands and unoccupied conduction band states across the phase transition. A joint inspection of the PES and XAS results shows that the MIT is not a one-step process, instead it is a process in which a semiconductor phase appears as an intermediate state. The final metallic phase from insulating state is reached through insulator–semiconductor, semiconductor–metal processes, and vice versa. The conventional MIT at around the TMIT=67 ℃ is actually a semiconductor–insulator transformation point.
基金supported by the National Key Research and Development Program of China (Grant No. 2022YFC2204302)the National Natural Science Foundation of China (Grant No. 52130604)。
文摘High-stability thermal management is critical for the measurements of high sensitivity for temperature, but also challenging because any small thermal disturbances could lead to unacceptable temperature fluctuations. The present work delivers a design for passive temperature control, customized for a component in the satellites for gravitational wave detection. A novel sandwichlike structure is proposed with the configurations of proper materials, consisting of a layer of insulation material and two layers of nanocomposite phase change materials, bringing an integration of heat insulation and absorption/storage. Its performance is examined using an improved thermal network model and the revised transfer function method(TFM). The basic results of the two methods are validated by present COMSOL simulations and available numerical and experimental data in the literature. An effective reduction of temperature fluctuation is achieved to the scale of 0.1 K, even under two thermal disturbances from different directions: a radiative heat flux of 20 W m~(-2)(inside) and a temperature fluctuation of about 20 K(outside). Moreover,the TFM is employed to analyze the effects of the frequency of thermal disturbance: excellent damping performance is obtained for over 3.2 mHz and the underlying mechanism is discussed. Overall, the present design is expected to be combined with active temperature control to explore more possible ways for temperature control with higher stability.
基金This work was supported by the National Natural Science Foundation of China-State Grid Corporation Joint Fund for Smart Grid(No.U1766219).
文摘This paper is devoted to solving the transient electric field and transient charge density on the dielectric interface under the electroquasistatic(EQS)field conditions with high accuracy.The proposed method is suitable for both 2-D and 3-D applications.Firstly,the governing equations represented by scalar electric potential are discretized by the nodal finite element method(FEM)in space and the finite difference method in time.Secondly,the transient constrained electric field equation on the boundary(TCEFEB)is derived to calculate the normal component of the transient electric field intensities on the Dirichlet boundary and dielectric interface as well as the transient charge density on the dielectric interface.Finally,a 2-D numerical example is employed to demonstrate the validity of the proposed method.Furthermore,the comparisons of the numerical accuracy of the proposed method in this paper with the existing FEMs for electric field intensity and charge density on the dielectric interface are conducted.The results show that the numerical accuracy of the proposed method for calculating the normal component of transient electric field intensities on the Dirichlet boundary and dielectric interface as well as the transient charge density on the dielectric interface is close to that of nodal electric potential and an order of magnitude higher than those of existing FEMs.