Pixelated non-volatile programmable photonic integrated circuits with 20-level intermediate states

Multi-level programmable photonic integrated circuits(PICs)and optical metasurfaces have gained widespread attention in many fields,such as neuromorphic photonics,opticalcommunications,and quantum information.In this paper,we propose pixelated programmable Si_(3)N_(4)PICs with record-high 20-level intermediate states at 785 nm wavelength.Such flexibility in phase or amplitude modulation is achieved by a programmable Sb_(2)S_(3)matrix,the footprint of whose elements can be as small as 1.2μm,limited only by the optical diffraction limit of anin-house developed pulsed laser writing system.We believe our work lays the foundation for laser-writing ultra-high-level(20 levels and even more)programmable photonic systems and metasurfaces based on phase change materials,which could catalyze diverse applications such as programmable neuromorphic photonics,biosensing,optical computing,photonic quantum computing,and reconfigurable metasurfaces.

Carbon nanotube integrated circuit technology:purification,assembly and integration

As the manufacturing process of silicon-based integrated circuits(ICs)approaches its physical limit,the quantum effect of silicon-based field-effect transistors(FETs)has become increasingly evident.And the burgeoning carbon-based semiconductor technology has become one of the most disruptive technologies in the post-Moore era.As one-dimensional nanomaterials,carbon nanotubes(CNTs)are far superior to silicon at the same technology nodes of FETs because of their excellent electrical transport and scaling properties,rendering them the most competitive material in the next-generation ICs technology.However,certain challenges impede the industrialization of CNTs,particularly in terms of material preparation,which significantly hinders the development of CNT-based ICs.Focusing on CNT-based ICs technology,this review summarizes its main technical status,development trends,existing challenges,and future development directions.

Total ionizing dose effect modeling method for CMOS digital-integrated circuit

Simulating the total ionizing dose(TID)of an electrical system using transistor-level models can be difficult and expensive,particularly for digital-integrated circuits(ICs).In this study,a method for modeling TID effects in complementary metaloxide semiconductor(CMOS)digital ICs based on the input/output buffer information specification(IBIS)was proposed.The digital IC was first divided into three parts based on its internal structure:the input buffer,output buffer,and functional area.Each of these three parts was separately modeled.Using the IBIS model,the transistor V-I characteristic curves of the buffers were processed,and the physical parameters were extracted and modeled using VHDL-AMS.In the functional area,logic functions were modeled in VHDL according to the data sheet.A golden digital IC model was developed by combining the input buffer,output buffer,and functional area models.Furthermore,the golden ratio was reconstructed based on TID experimental data,enabling the assessment of TID effects on the threshold voltage,carrier mobility,and time series of the digital IC.TID experiments were conducted using a CMOS non-inverting multiplexer,NC7SZ157,and the results were compared with the simulation results,which showed that the relative errors were less than 2%at each dose point.This confirms the practicality and accuracy of the proposed modeling method.The TID effect model for digital ICs developed using this modeling technique includes both the logical function of the IC and changes in electrical properties and functional degradation impacted by TID,which has potential applications in the design of radiation-hardening tolerance in digital ICs.

2024 IEEE International Conference on Integrated Circuits,Technologies and Applications

October 25-27(Fri-Sun),2024 Hangzhou杭州,Hangzhou,China Call for Papers The 7th IEEE International Conference on Integrated Circuits,Technologies and Applications(ICTA 2024),will be held on October 25-27,2024 in Hangzhou,China.This conference will be held in China to provide an international forum according to IEEE standard for the presentation and exchange of the latest technical achievements and cross-discipline fertilization of IC designs,technologies,and applications in our fast-changing society.This year's theme is“Chiplet and Future IDM”.

Integrated Experimental and Simulation Investigation of Breakdown Voltage Characteristics Across Electrode Configurations in SF_(6) Circuit Breakers

This study investigates the breakdown voltage characteristics in sulfur hexafluoride(SF6)circuit breakers,employing a novel approach that integrates both experimental investigations and finite element simulations.Utilizing a sphere-sphere electrode configuration,we meticulously measured the relationship between breakdown voltage and electrode gap distances ranging from 1 cm to 4.5 cm.Subsequent simulations,conducted using COMSOL Multiphysics,mirrored the experimental setup to validate the model’s accuracy through a comparison of the breakdown voltage-electrode gap distance curves.The simulation results not only aligned closely with the experimental data but also allowed the extraction of detailed electric field strength,electric potential contours,and electric current flow curves at the breakdown voltage for gap distances extending from 1 to 4.5 cm.Extending the analysis,the study explored the electric field and potential distribution at a constant voltage of 72.5 kV for gap distances between 1 to 10 cm,identifying the maximum electric field strength.A comprehensive comparison of five different electrode configurations(sphere-sphere,sphere-rod,sphere-plane,rod-plane,rod-rod)at 72.5 kV and a gap distance of 1.84 cm underscored the significant influence of electrode geometry on the breakdown process.Moreover,the research contrasts the breakdown voltage in SF6 with that in air,emphasizing SF6’s superior insulating properties.This investigation not only elucidates the intricate dynamics of electrical breakdown in SF6 circuit breakers but also contributes valuable insights into the optimal electrode configurations and the potential for alternative insulating gases,steering future advancements in high-voltage circuit breaker technology.

Emerging MoS_(2)Wafer-Scale Technique for Integrated Circuits

As an outstanding representative of layered materials,molybdenum disulfide(MoS_(2))has excellent physical properties,such as high carrier mobility,stability,and abundance on earth.Moreover,its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics,flexible electronics,and focal-plane photodetector.However,to realize the all-aspects application of MoS_(2),the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization.Although the MoS_(2)grain size has already improved from several micrometers to sub-millimeters,the high-quality growth of wafer-scale MoS_(2)is still of great challenge.Herein,this review mainly focuses on the evolution of MoS_(2)by including chemical vapor deposition,metal–organic chemical vapor deposition,physical vapor deposition,and thermal conversion technology methods.The state-of-the-art research on the growth and optimization mechanism,including nucleation,orientation,grain,and defect engineering,is systematically summarized.Then,this review summarizes the wafer-scale application of MoS_(2)in a transistor,inverter,electronics,and photodetectors.Finally,the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS_(2).

Development of an Integrated CMUTs-Based Resonant Biosensor for Label-Free Detection of DNA with Improved Selectivity by Ethylene-Glycol Alkanethiols

Gravimetric resonant-inspired biosensors have attracted increasing attention in industrial and point-ofcare applications,enabling label-free detection of biomarkers such as DNA and antibodies.Capacitive micromachined ultrasonic transducers(CMUTs)are promising tools for developing miniaturized highperformance biosensing complementary metal–oxide–silicon(CMOS)platforms.However,their operability is limited by inefficient functionalization,aggregation,crosstalk in the buffer,and the requirement for an external high-voltage(HV)power supply.In this study,we aimed to propose a CMUTs-based resonant biosensor integrated with a CMOS front–end interface coupled with ethylene–glycol alkanethiols to detect single-stranded DNA oligonucleotides with large specificity.The topography of the functionalized surface was characterized by energy-dispersive X-ray microanalysis.Improved selectivity for onchip hybridization was demonstrated by comparing complementary and non-complementary singlestranded DNA oligonucleotides using fluorescence imaging technology.The sensor array was further characterized using a five-element lumped equivalent model.The 4 mm^(2) application-specific integrated circuit chip was designed and developed through 0.18 lm HV bipolar-CMOS-double diffused metal–oxide–silicon(DMOS)technology(BCD)to generate on-chip 20 V HV boosting and to track feedback frequency under a standard 1.8 V supply,with a total power consumption of 3.8 mW in a continuous mode.The measured results indicated a detection sensitivity of 7.943×10^(-3) lmol·L^(-1)·Hz^(-1) over a concentration range of 1 to 100 lmol·L^(-1).In conclusion,the label-free biosensing of DNA under dry conditions was successfully demonstrated using a microfabricated CMUT array with a 2 MHz frequency on CMOS electronics with an internal HV supplier.Moreover,ethylene–glycol alkanethiols successfully deposited self-assembled monolayers on aluminum electrodes,which has never been attempted thus far on CMUTs,to enhance the selectivity of bio-functionalization.The findings of this study indicate the possibility of full-on-chip DNA biosensing with CMUTs.

3D‑Printed Carbon‑Based Conformal Electromagnetic Interference Shielding Module for Integrated Electronics

Electromagnetic interference shielding(EMI SE)modules are the core com-ponent of modern electronics.However,the tra-ditional metal-based SE modules always take up indispensable three-dimensional space inside electronics,posing a major obstacle to the integra-tion of electronics.The innovation of integrating 3D-printed conformal shielding(c-SE)modules with packaging materials onto core electronics offers infinite possibilities to satisfy ideal SE func-tion without occupying additional space.Herein,the 3D printable carbon-based inks with various proportions of graphene and carbon nanotube nanoparticles are well-formulated by manipulating their rheological peculiarity.Accordingly,the free-constructed architectures with arbitrarily-customized structure and multifunctionality are created via 3D printing.In particular,the SE performance of 3D-printed frame is up to 61.4 dB,simultaneously accompanied with an ultralight architecture of 0.076 g cm^(-3) and a superhigh specific shielding of 802.4 dB cm3 g^(-1).Moreover,as a proof-of-concept,the 3D-printed c-SE module is in situ integrated into core electronics,successfully replacing the traditional metal-based module to afford multiple functions for electromagnetic compatibility and thermal dissipa-tion.Thus,this scientific innovation completely makes up the blank for assembling carbon-based c-SE modules and sheds a brilliant light on developing the next generation of high-performance shielding materials with arbitrarily-customized structure for integrated electronics.

Optimal synthesis of heat-integrated distillation configurations using the two-column superstructure

In the realm of the synthesis of heat-integrated distillation configurations,the conventional approach for exploring more heat integration possibilities typically entails the splitting of a single column into a twocolumn configuration.However,this approach frequently necessitates tedious enumeration procedures,resulting in a considerable computational burden.To surmount this formidable challenge,the present study introduces an innovative remedy:The proposition of a superstructure that encompasses both single-column and multiple two-column configurations.Additionally,a simultaneous optimization algorithm is applied to optimize both the process parameters and heat integration structures of the twocolumn configurations.The effectiveness of this approach is demonstrated through a case study focusing on industrial organosilicon separation.The results underscore that the superstructure methodology not only substantially mitigates computational time compared to exhaustive enumeration but also furnishes solutions that exhibit comparable performance.

High-chromium vanadium-titanium magnetite all-pellet integrated burden optimization and softening-melting behavior based on flux pellets

High-chromium vanadium-titanium magnetite(HVTM)is a crucial polymetallic-associated resource to be developed.The allpellet operation is a blast furnace trend that aims to reduce carbon dioxide emissions in the future.By referencing the production data of vanadium-titanium magnetite blast furnaces,this study explored the softening-melting behavior of high-chromium vanadium-titanium magnetite and obtained the optimal integrated burden based on flux pellets.The results show that the burden with a composition of 70wt%flux pellets and 30wt%acid pellets exhibits the best softening-melting properties.In comparison to that of the single burden,the softening-melting characteristic temperature of this burden composition was higher.The melting interval first increased from 307 to 362℃and then decreased to 282℃.The maximum pressure drop(ΔPmax)decreased from 26.76 to 19.01 kPa.The permeability index(S)dropped from 4643.5 to 2446.8 kPa·℃.The softening-melting properties of the integrated burden were apparently improved.The acid pellets played a role in withstanding load during the softening process.The flux pellets in the integrated burden exhibited a higher slag melting point,which increased the melting temperature during the melting process.The slag homogeneity and the TiC produced by over-reduction led to the gas permeability deterioration of the single burden.The segregation of the flux and acid pellets in the HVTM proportion and basicity mainly led to the better softening-melting properties of the integrated burden.

A Single-Board Integrated Millimeter-Wave Asymmetric Full-Digital Beamforming Array for B5G/6G Applications

In this article,a single-board integrated millimeter-wave(mm-Wave)asymmetric full-digital beamforming(AFDBF)array is developed for beyond-fifth-generation(B5G)and sixth-generation(6G)communications.The proposed integrated array effectively addresses the challenge of arranging a large number of ports in a full-digital array by designing vertical connections in a three-dimensional space and successfully integrating full-digital transmitting(Tx)and receiving(Rx)arrays independently in a single board.Unlike the traditional symmetric array,the proposed asymmetric array is composed of an 8×8 Tx array arranged in a square shape and an 8+8 Rx array arranged in an L shape.The center-to-center distance between two adjacent elements is 0.54k0 for both the Tx and Rx arrays,where k0 is the free-space wavelength at 27 GHz.The proposed AFDBF array possesses a more compact structure and lower system hardware cost and power consumption compared with conventional brick-type full-digital arrays.In addition,the energy efficiency of the proposed AFDBF array outperforms that of a hybrid beamforming array.The measurement results indicate that the operating frequency band of the proposed array is 24.25–29.50 GHz.An eight-element linear array within the Tx array can achieve a scanning angle ranging from-47°to+47°in both the azimuth and the elevation planes,and the measured scanning range of each eight-element Rx array is–45°to+45°.The measured maximum effective isotropic radiated power(EIRP)of the eight-element Tx array is 43.2 dBm at 28.0 GHz(considering the saturation point).Furthermore,the measured error vector magnitude(EVM)is less than 3%when 64-quadrature amplitude modulation(QAM)waveforms are used.

A Novel Framework to Construct S-Box Quantum Circuits Using System Modeling: Application to 4-Bit S-Boxes

Quantum computers accelerate many algorithms based on the superposition principle of quantum mechanics.The Grover algorithm provides significant performance to malicious users attacking symmetric key systems.Since the performance of attacks using quantum computers depends on the efficiency of the quantum circuit of the encryption algorithms,research research on the implementation of quantum circuits is essential.This paper presents a new framework to construct quantum circuits of substitution boxes(S-boxes)using system modeling.We model the quantum circuits of S-boxes using two layers:Toffoli and linear layers.We generate vector spaces based on the values of qubits used in the linear layers and apply them to find quantum circuits.The framework finds the circuit bymatching elements of vector spaces generated fromthe input and output of a given S-box,using the forward search or themeet-in-the-middle strategy.We developed a tool to apply this framework to 4-bit S-boxes.While the 4-bit S-box quantum circuit construction tool LIGHTER-R only finds circuits that can be implemented with four qubits,the proposed tool achieves the circuits with five qubits.The proposed tool can find quantum circuits of 4-bit odd permutations based on the controlled NOT,NOT,and Toffoli gates,whereas LIGHTER-R is unable to perform this task in the same environment.We expect this technique to become a critical step toward optimizing S-box quantum circuits.

MET receptor tyrosine kinase promotes the generation of functional synapses in adult cortical circuits

Loss of synapse and functional connectivity in brain circuits is associated with aging and neurodegeneration,however,few molecular mechanisms are known to intrinsically promote synaptogenesis or enhance synapse function.We have previously shown that MET receptor tyrosine kinase in the developing cortical circuits promotes dendritic growth and dendritic spine morphogenesis.To investigate whether enhancing MET in adult cortex has synapse regenerating potential,we created a knockin mouse line,in which the human MET gene expression and signaling can be turned on in adult(10–12 months)cortical neurons through doxycycline-containing chow.We found that similar to the developing brain,turning on MET signaling in the adult cortex activates small GTPases and increases spine density in prefrontal projection neurons.These findings are further corroborated by increased synaptic activity and transient generation of immature silent synapses.Prolonged MET signaling resulted in an increasedα-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid/N-methyl-Daspartate(AMPA/NMDA)receptor current ratio,indicative of enhanced synaptic function and connectivity.Our data reveal that enhancing MET signaling could be an interventional approach to promote synaptogenesis and preserve functional connectivity in the adult brain.These findings may have implications for regenerative therapy in aging and neurodegeneration conditions.

Nullors, and Nullor Circuits;There Applications in Symbolic Circuit Analysis and Design

The objective in this presentation is to introduce some of the unique properties and applications of nullors in active circuit analysis and designs. The emphasis is to discuss the role nullors can play in symbolic representation of transfer functions. To show this we adopt the topological platform for the circuit analysis and use a recently developed Admittance Method (AM) to achieve the Sum of Tree Products (STP), replacing the determinant and cofactors of the Nodal Admittance Matrix (NAM) of the circuit. To construct a transfer function, we start with a given active circuit and convert all its controlled sources and I/O-ports to nullors. Now, with a solid nullor circuit (passive elements and nullors) we first eliminate the passive elements through AM operations. This produces the STPs. Second, the all-nullor circuit is then used to find the signs or the STPs. Finally, the transfer function (in symbolic, if chosen) is obtained from the ratio between the STPs.

基于MSPA-MCR-CIRCUIT的山西省运城市景观生态网络构建

山西省运城市位于黄河中下游三省交界处,其景观要素成分复杂,对运城景观生态网络斑块与廊道的研究有利于黄河生态系统稳定性的保护。基于形态空间格局理论(MSPA)确定连通性强的核心斑块,识别核心生态源地,以最小累计阻力模型(MCR)为基础,叠加7种阻力因子构建综合阻力面,根据重力模型划分生态廊道等级。以基于电路理论(CIRCUIT)的Linkage Mapper工具识别生态夹点和障碍点作为生态节点,综合构建源地(面)-廊道(线)-节点(点)的运城市景观生态网络。结果表明:1)运城市核心生态源地有9处,综合重力模型和实际建设需求划分13条重要生态廊道和10条一般生态廊道,识别出关键生态节点17个,一般生态节点34个;2)现有重要生态廊道集中于运城南部,南北方向生态联系较弱,可优先加强贯穿稷山县、新绛县、闻喜县的重要生态廊道建设;3)MSPA模型与电路理论的综合运用可提升景观生态网络构建的科学性和准确性,有利于确定生态修复关键区域,为生态修复项目的布局提供有力支撑。

2023 IEEE International Conference on Integrated Circuits,Technologies and Applications Call for Papers

The 6^(th)IEEE International Conference on Integrated Circuits,Technologies and Applications(ICTA 2023),will be held on October,2023 in Hefei,China.This conference will be held in China to provide an international forum according to IEEE standard for the presentation and exchange of the latest technical achievements and cross-discipline fertilization of IC designs,technologies,and applications in our fast-changing society.

Interplay between topology and localization on superconducting circuits

Topological insulators occupy a prominent position in the realm of condensed matter physics. Nevertheless, the presence of strong disorder has the potential to disrupt the integrity of topological states, leading to the localization of all states.This study delves into the intricate interplay between topology and localization within the one-dimensional Su–Schrieffer–Heeger(SSH) model, which incorporates controllable off-diagonal quasi-periodic modulations on superconducting circuits.Through the application of external alternating current(ac) magnetic fluxes, each transmon undergoes controlled driving,enabling independent tuning of all coupling strengths. Within a framework of this model, we construct comprehensive phase diagrams delineating regions characterized by extended topologically nontrivial states, critical localization, and coexisting topological and critical localization phases. The paper also addresses the dynamics of qubit excitations, elucidating distinct quantum state transfers resulting from the intricate interplay between topology and localization. Additionally, we propose a method for detecting diverse quantum phases utilizing existing experimental setups.

2023 IEEE International Conference on Integrated Circuits,Technologies and Applications Call for Papers

The 6th IEEE International Conference on Integrated Circuits,Technologies and Applications(ICTA 2023),will be held on October,2023 in Hefei,China.This conference will be held in China to provide an international forum according to IEEE standard for the presentation and exchange of the latest technical achievements and cross-discipline fertilization of IC designs,technologies,and applications in our fast-changing society.

In-situ deposited anti-aging TiN capping layer for Nb superconducting quantum circuits

The performance of Nb superconducting quantum devices is predominantly limited by dielectric loss at the metal–air interface,where Nb2O5 is considered the main loss source.Here,we suppress the formation of native oxides by in-situ deposition of a TiN capping layer on the Nb film.With TiN capping layers,no Nb2O5 forms on the surface of the Nb film.The quality factor Qi of the Nb resonator increases from 5.6×10^(5) to 7.9×10^(5) at low input power and from 6.8×10^(6) to 1.1×10^(7)at high input power.Furthermore,the TiN capping layer also shows good aging resistance in Nb resonator devices,with no significant performance fluctuations after one month of aging.These findings highlight the effectiveness of TiN capping layers in enhancing the performance and longevity of Nb superconducting quantum devices.

The circuitry landscape of perovskite solar cells:An in-depth analysis

The extensive research and development in perovskite solar cells (PSCs) have rekindled the hopes of converting solar energy into electricity.An elusive understanding of underlying mechanisms is required for the development of efficient PSCs.Over the years,Impedance Spectroscopy (IS) characterization,along with complementary techniques,has proven to be an effective way to understand and analyze the charge transport and recombination at interface and bulk of PSCs.The IS of PSCs have been analyzed,interpreted,and improvised continuously,revealing intricate details about the work.However,there is a lack of centralized source of these details,which make it tougher to account for the generalized approach to understand the device properties.The present work is focused on compiling the research done on various PSC device architectures via IS to construct a comprehensive foundation of information on impedance plots,equivalent circuits,and associated processes.