We propose a novel thermal-conscious power model for integrated circuits that can accurately predict power and temperature under voltage scaling. Experimental results show that the leakage power consumption is underes...We propose a novel thermal-conscious power model for integrated circuits that can accurately predict power and temperature under voltage scaling. Experimental results show that the leakage power consumption is underestimated by 52 % if thermal effects are omitted. Furthermore, an inconsistency arises when energy and temperature are simultaneously optimized by dynamic voltage scaling. Temperature is a limiting factor for future integrated circuits,and the thermal optimization approach can attain a temperature reduction of up to 12℃ with less than 1.8% energy penalty compared with the energy optimization one.展开更多
An analytical model for current-voltage behavior of amorphous In-Ga-Zn-O thin-film transistors（a-IGZO TFTs）with dual-gate structures is developed.The unified expressions for synchronous and asynchronous operating mo...An analytical model for current-voltage behavior of amorphous In-Ga-Zn-O thin-film transistors（a-IGZO TFTs）with dual-gate structures is developed.The unified expressions for synchronous and asynchronous operating modes are derived on the basis of channel charges,which are controlled by gate voltage.It is proven that the threshold voltage of asynchronous dual-gate IGZO TFTs is adjusted in proportion to the ratio of top insulating capacitance to the bottom insulating capacitance（C_（TI）/C_（BI））.Incorporating the proposed model with Verilog-A,a touch-sensing circuit using dual-gate structure is investigated by SPICE simulations.Comparison shows that the touch sensitivity is increased by the dual-gate IGZO TFT structure.展开更多
Interconnect reliability has been regarded as a discipline that must be seriously taken into account from the early design phase of integrated circuit (IC). In order to study the status and trend of the interconnect r...Interconnect reliability has been regarded as a discipline that must be seriously taken into account from the early design phase of integrated circuit (IC). In order to study the status and trend of the interconnect reliability, a comprehensive review of the published literatures is carried out. This can depict the global trend of ICs’ interconnect reliability and help the new entrants to understand the present situation of this area.展开更多
This work presents modelling aspects of automatic gain control （AGC） loops based on linear-in-dB variable gain amplifiers （VGAs）. In these loops, the VGA control voltage is also an excellent received signal streng...This work presents modelling aspects of automatic gain control （AGC） loops based on linear-in-dB variable gain amplifiers （VGAs）. In these loops, the VGA control voltage is also an excellent received signal strength indicator （RSSI）. The VGA gain is however nonlinearly related to the control voltage. Moreover, VGAs and detectors undergo nonlinear compression under high input amplitudes during settling transients. The main contribution in this work is a proposed nonlinear model based on simple and readily available components from the ＂analogLib＂ and ＂functional＂ libraries in CADENCE design environment -making it very easy and fast to build and simulate-that captures the nonlinear effects of AGC loops. The model is capable of verifying the AGC loop stability and capturing the loop dynamics with high accuracy compared to time consuming circuit level simulations. This provides insights into system level parameters such as AGC loop bandwidth, phase margin, settling time as well as estimating the AGC range and RSSI voltage vs. input power. Measurement results from a fabricated AGC prototype are in good agreement with simulation and modelling results thus validating the proposed modelling approach.展开更多
The optimization of high power terahertz monolithic integrated circuit (TMIC) is systemically studied based on the physical model of the Schottky barrier varactor (SBV) with interface defects and tunneling effect. An ...The optimization of high power terahertz monolithic integrated circuit (TMIC) is systemically studied based on the physical model of the Schottky barrier varactor (SBV) with interface defects and tunneling effect. An ultra-thin dielectric layer is added to describe the extra tunneling effect and the damping of thermionic emission current induced by the interface defects. Power consumption of the dielectric layer results in the decrease of capacitance modulation ration (Cmax/Cmin), and thus leads to poor nonlinear C–V characteristics. The proposed Schottky metal-brim (SMB) terminal structure could improve the capacitance modulation ration by reducing the influence of the interface charge and eliminating the fringing capacitance effect. Finally, a 215 GHz tripler TMIC is fabricated based on the SMB terminal structure. The output power is above 5 mW at 210–218 GHz and the maximum could exceed 10 mW at 216 GHz, which could be widely used in terahertz imaging, radiometers, and so on. This paper also provides theoretical support for the SMB structure to optimize the TMIC performance.展开更多
A model of monolithic transformers is presented, which is analyzed with characteristic functions. A closed- form analytical approach to extract all the model parameters for the equivalent circuit of Si-based on-chip t...A model of monolithic transformers is presented, which is analyzed with characteristic functions. A closed- form analytical approach to extract all the model parameters for the equivalent circuit of Si-based on-chip transformers is proposed. A novel de-coupling technique is first developed to reduce the complexity in the Y parameters for the transformer, and the model parameters can then be extracted analytically by a set of characteristic functions. Simulation based on the extracted parameters has been carried out for transformers with different structures, and good accuracy is obtained compared to a 3-demensional full-wave numerical electro- magnetic field solver. The presented approach will be very useful to provide a scalable and wide-band compact circuit model for Si-based RF transformers.展开更多
文摘We propose a novel thermal-conscious power model for integrated circuits that can accurately predict power and temperature under voltage scaling. Experimental results show that the leakage power consumption is underestimated by 52 % if thermal effects are omitted. Furthermore, an inconsistency arises when energy and temperature are simultaneously optimized by dynamic voltage scaling. Temperature is a limiting factor for future integrated circuits,and the thermal optimization approach can attain a temperature reduction of up to 12℃ with less than 1.8% energy penalty compared with the energy optimization one.
基金Supported by the National Key Research and Development Program of China under Grant No 2017YFA0204600the National Natural Science Foundation of China under Grant No 61404002the Science and Technology Project of Hunan Province under Grant No 2015JC3041
文摘An analytical model for current-voltage behavior of amorphous In-Ga-Zn-O thin-film transistors（a-IGZO TFTs）with dual-gate structures is developed.The unified expressions for synchronous and asynchronous operating modes are derived on the basis of channel charges,which are controlled by gate voltage.It is proven that the threshold voltage of asynchronous dual-gate IGZO TFTs is adjusted in proportion to the ratio of top insulating capacitance to the bottom insulating capacitance（C_（TI）/C_（BI））.Incorporating the proposed model with Verilog-A,a touch-sensing circuit using dual-gate structure is investigated by SPICE simulations.Comparison shows that the touch sensitivity is increased by the dual-gate IGZO TFT structure.
文摘Interconnect reliability has been regarded as a discipline that must be seriously taken into account from the early design phase of integrated circuit (IC). In order to study the status and trend of the interconnect reliability, a comprehensive review of the published literatures is carried out. This can depict the global trend of ICs’ interconnect reliability and help the new entrants to understand the present situation of this area.
文摘This work presents modelling aspects of automatic gain control （AGC） loops based on linear-in-dB variable gain amplifiers （VGAs）. In these loops, the VGA control voltage is also an excellent received signal strength indicator （RSSI）. The VGA gain is however nonlinearly related to the control voltage. Moreover, VGAs and detectors undergo nonlinear compression under high input amplitudes during settling transients. The main contribution in this work is a proposed nonlinear model based on simple and readily available components from the ＂analogLib＂ and ＂functional＂ libraries in CADENCE design environment -making it very easy and fast to build and simulate-that captures the nonlinear effects of AGC loops. The model is capable of verifying the AGC loop stability and capturing the loop dynamics with high accuracy compared to time consuming circuit level simulations. This provides insights into system level parameters such as AGC loop bandwidth, phase margin, settling time as well as estimating the AGC range and RSSI voltage vs. input power. Measurement results from a fabricated AGC prototype are in good agreement with simulation and modelling results thus validating the proposed modelling approach.
文摘The optimization of high power terahertz monolithic integrated circuit (TMIC) is systemically studied based on the physical model of the Schottky barrier varactor (SBV) with interface defects and tunneling effect. An ultra-thin dielectric layer is added to describe the extra tunneling effect and the damping of thermionic emission current induced by the interface defects. Power consumption of the dielectric layer results in the decrease of capacitance modulation ration (Cmax/Cmin), and thus leads to poor nonlinear C–V characteristics. The proposed Schottky metal-brim (SMB) terminal structure could improve the capacitance modulation ration by reducing the influence of the interface charge and eliminating the fringing capacitance effect. Finally, a 215 GHz tripler TMIC is fabricated based on the SMB terminal structure. The output power is above 5 mW at 210–218 GHz and the maximum could exceed 10 mW at 216 GHz, which could be widely used in terahertz imaging, radiometers, and so on. This paper also provides theoretical support for the SMB structure to optimize the TMIC performance.
文摘A model of monolithic transformers is presented, which is analyzed with characteristic functions. A closed- form analytical approach to extract all the model parameters for the equivalent circuit of Si-based on-chip transformers is proposed. A novel de-coupling technique is first developed to reduce the complexity in the Y parameters for the transformer, and the model parameters can then be extracted analytically by a set of characteristic functions. Simulation based on the extracted parameters has been carried out for transformers with different structures, and good accuracy is obtained compared to a 3-demensional full-wave numerical electro- magnetic field solver. The presented approach will be very useful to provide a scalable and wide-band compact circuit model for Si-based RF transformers.
